• 제목, 요약, 키워드: Photoresist

검색결과 419건 처리시간 0.032초

오존/증기 혼합물을 이용한 고효율 반도체 감광막 제거기술 (High Efficiency Photoresist Strip Technology by using the Ozone/Napor Mixture)

  • 손영수;함상용
    • 한국전기전자재료학회:학술대회논문집
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    • pp.22-23
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    • 2006
  • A process for removal of photoresist(PR) m semiconductor manufacturing using water vapor with ozone is presented. For the realization of the ozone/vapor mixture process, high concentration ozone generator and process facilities have developed. As a result of the silicon wafer PR strip test, we confirmed the high efficiency PR strip rates of 400nm/mm or more at the ozone concentration of 16wt%/$O_2$. The ozone/vapor mixture process is more effective than the ozonized water Immersion process.

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Preparation of the Polymers Containing Phenylamide and Dimethylaminoethyl Groups and their Properties as a Nagative Photoresist

  • Chae, Kyu-Ho;Kang, Jin-Koo;Kim, Su-Kyung;Chough, Sung-Hyo
    • Journal of Photoscience
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    • v.7 no.2
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    • pp.47-52
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    • 2000
  • The copolymmers of N, N-dimethylaminoethyl methacrylate(DAEM) and N-arylmethacrylamide (AMA) were prepared, and their photochemical properties as a negative photoresist were studied by the measurements of insoluble fraction, and by UV and IR absorption spectral changes. These copolymers are soluble in DMF, actone, methanol, of acidic buffer solutions. Solubility of these copolymer films in the vuffer solutions increased with the amount of DAEM units in the copolymer and decreased with the pH value. The insoluble fraction of the copolymer films in the buffer solution of pH 4 of in methanol increased with irradiation time and the amount of AMA units in the copolymer. UV and IR spectral changes indicated that not only photo-crosslinking but also the photo-Fries rearrangement took place upon irradiation with a 254nm UV light.

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Characterization of Negative Photoresist Processing by Statistical Design of Experiment (DOE)

  • Mun Sei-Young;Kim Gwang-Beom;Soh Dea-Wha;Hong Sang Jeen
    • Journal of information and communication convergence engineering
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    • v.3 no.4
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    • pp.191-194
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    • 2005
  • SU-8 is a epoxy based photoresist designed for MEMS applications, where a thick, chemically and thermally stable image are desired. However SU-8 has proven to be very sensitive to variation in processing variables and hence difficult to use in the fabrication of useful structures. In this paper, negative SU-8 photoresist processed has been characterized in terms of delamination, based on a full factorial designed experiment. Employing the design of experiment (DOE), a process parameter is established, and analyzing of full factorial design is generated to investigate degree of delamination associated with three process parameters: post exposure bake (PEB) temperature, PEB time, and exposure energy. These results identify acceptable ranges of the three process variables to avoid delamination of SU-8 film, which in turn might lead to potential defects in MEMS device fabrication.

Forming a Fresnel Zone Lens: Effects of Photoresist on Digital-micromirror-device Maskless Lithography with Grayscale Exposure

  • Huang, Yi-Hsiang;Jeng, Jeng-Ywan
    • Journal of the Optical Society of Korea
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    • v.16 no.2
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    • pp.127-132
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    • 2012
  • This study discusses photoresist forming using a composite grayscale to fabricate a Fresnel lens. Grayscale lithography is a common production method used to facilitate the forming of lenses with different curvatures and depths. However, this approach is time consuming and expensive. This study proposes a method for overcoming these obstacles by integrating a digital micromirror device and microscope to supplant the traditional physical grayscale mask. This approach provides a simple and practical maskless optical lithography system. According to the results, the two adjacent grayscales displayed substantial differences between the high grayscale and influence the low grayscale that ultimately affected photoresist formation. Furthermore, we show that change of up to 150% in the slope can be achieved by changing the grayscale gradient in the central zone and the ring profile. The results of the optical experiment show a focus change with different gray gradients.

선택적 경사 노광과 후면 노광에 의한 3차원 구조물의 제작 (Fabrication of 3-D Structures by Inclined and Rear-side Exposures)

  • 이준섭;신현준;문성욱;송석호;김태엽
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • v.53 no.1
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    • pp.47-52
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    • 2004
  • 3D microstructures with different side-wall angles and different scales are fabricated by both methods of inclined exposure and rear-side exposure at each of selected areas on a same substrate. Conventional methods of inclined exposure are used to make side-walls with a same inclined angle on one substrate and to get a scale error due to front-side exposure through thick photoresist layer, But, by using the proposed method, we are able to fabricate 3D microstructures on a same substrate with various side-wall angles and accurate dimensions as the original design. In the rear-side exposure, UV exposure light reflects from the chromium mask pattern after passing through the thick photoresist layer, resulting in fabrication of well-defined, inclined 3D structures inside the thick photoresist layer.

고효율 LCD 감광막 제거기술 구현 연구 (A Study on the Realization of the High Efficiency LCD Photoresist Removal Technology)

  • 손영수;함상용;김병인;이성휘
    • 한국전기전자재료학회논문지
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    • v.20 no.11
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    • pp.977-982
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    • 2007
  • The realization of the photoresist(PR) removal method with vaporized water and ozone gas mixture has been studied for the LCD TFT array manufacturing. The developed PR stripper uses the water boundary layer control method based on the high concentration ozone production technology. We develop the prototype of PR stripper and experiment to find the optimal process parameter condition like as the ozone gas flow/concentration, process reaction time and thin boundary layer formation. As a results, we realize the LCD PR strip rate over the 0.4 ${\mu}m/min$ and this PR removal rate is more than 5 times higher than the conventional immersion type ozonized water process.

Preparation of photoresist-derived carbon micropatterns by proton ion beam lithography and pyrolysis

  • Nam, Hui-Gyun;Jung, Jin-Mook;Hwang, In-Tae;Shin, Junhwa;Jung, Chang-Hee;Choi, Jae-Hak
    • Carbon letters
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    • v.24
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    • pp.55-61
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    • 2017
  • Carbon micropatterns (CMs) were fabricated from a negative-type SU-8 photoresist by proton ion beam lithography and pyrolysis. Well-defined negative-type SU-8 micropatterns were formed by proton ion beam lithography at the optimized fluence of $1{\times}10^{15}ions\;cm^{-2}$ and then pyrolyzed to form CMs. The crosslinked network structures formed by proton irradiation were converted to pseudo-graphitic structures by pyrolysis. The fabricated CMs showed a good electrical conductivity of $1.58{\times}10^2S\;cm^{-1}$ and a very low surface roughness.

MEMS 기술을 이용한 프로브 카드의 탐침 제작 (Fabrication of Tip of Probe Card Using MEMS Technology)

  • 이근우;김창교
    • 제어로봇시스템학회논문지
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    • v.14 no.4
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    • pp.361-364
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    • 2008
  • Tips of probe card were fabricated using MEMS technology. P-type silicon wafer with $SiO_2$ layer was used as a substrate for fabricating the probe card. Ni-Cr and Au used as seed layer for electroplating Ni were deposited on the silicon wafer. Line patterns for probing devices were formed on silicon wafer by electroplating Ni through mold which formed by MEMS technology. Bridge structure was formed by wet-etching the silicon substrate. AZ-1512 photoresist was used for protection layer of back side and DNB-H100PL-40 photoresist was used for patterning of the front side. The mold with the thickness of $60{\mu}m$ was also formed using THB-120N photoresist and probe tip with thickness of $50{\mu}m$ was fabricated by electroplating process.

다구찌 방법을 이용한 레이저 포토리소그라피 미세패턴가공 기술의 최적화 (Optimization of Laser Photolithography Micromachining Technique based on Taguchi Method)

  • 백남국;김대은
    • 대한기계학회:학술대회논문집
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    • pp.871-875
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    • 2001
  • Laser photolithography technique is useful for fabricating micro-patterns of silicon wafers. In this work, the laser photolithography micromachining technique is optimized based on Taguchi method. Sensitivity analysis was performed using laser scanning speed and laser power level as the parameters. The results show that for the photoresist used in this work, a laser scan speed of $70{\mu}m/s$ at 50mW laser power gives the best result.

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감광제 건식제거공정의 최적화 (Optimization of down stream plasma ashing process)

  • 박세근;이종근
    • E2M - 전기 전자와 첨단 소재
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    • v.9 no.9
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    • pp.918-924
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    • 1996
  • A downstream oxygen plasma is generated by capacitively coupled RF power and applied to photoresist stripping. Stripping rate (ashing rate) is measured in terms of RF power, chamber pressure, oxygen flow rate and temperature. Ashing reaction is thermally activated and depends on oxygen radical density. The ashing process is optimized to have the high ashing rate, good uniformity and minimal plasma damage using a statistical method.

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