• Title/Summary/Keyword: Photoresist

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A Study on the Measurement of Dill and Mack Model Parameters of a Photoresist (포토레지스트의 Dill 및 Mack 모델 파라미터 측정에 관한 연구)

  • Park, Seungtae;Kwon, Haehyuck;Park, Jong-Rak
    • Korean Journal of Optics and Photonics
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    • v.33 no.6
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    • pp.324-330
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    • 2022
  • We measured the Dill and Mack model parameters that determine the exposure and development characteristics of photoresists, respectively. First, photoresist samples were prepared while altering the exposure dose, and changes in transmittance were measured. Analyzing these results, the Dill model parameters A, B, and C were determined. In particular, the exact solution of the Dill model equation was used to determine the C parameter. In addition, changes in thickness were measured as a function of development time for different exposure doses, and the Mack model parameters Rmin, Rmax, a, and n were determined using the results. We also determined parameter values for the reduced Mack model that uses only three parameters, Rmin, Rmax, and n. The root mean square error between the model predictions and the measured values for the photoresist thickness was found to increase slightly compared to the case using the original Mack model with four parameters.

Removal of Photoresist Mask after the Cl2/HBr/CF4 Reactive Ion Silicon Etching (Cl2/HBr/CF4 반응성 이온 실리콘 식각 후 감광막 마스크 제거)

  • Ha, Tae-Kyung;Woo, Jong-Chang;Kim, Gwan-Ha;Kim, Chang-Il
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.23 no.5
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    • pp.353-357
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    • 2010
  • Recently, silicon etching have received much attention for display industry, nano imprint technology, silicon photonics, and MEMS application. After the etching process, removing of etch mask and residue of sidewall is very important. The investigation of the etched mask removing was carried out by using the ashing, HF dipping and acid cleaning process. Experiment shows that oxygen component of reactive gas and photoresist react with silicon and converting them into the mask fence. It is very difficult to remove by using ashing or acid cleaning process because mask fence consisted of Si and O compounds. However, dilute HF dipping is very effective process for SiOx layer removing. Finally, we found optimized condition for etched mask removing.

Laser Direct Patterning of Photoresist Layer for Halftone Dots of Gravure Printing Roll (그라비아 인쇄물의 망점 형성을 위한 포토레지스터 코팅층의 레이저 직접 페터닝)

  • Seo, Jung;Lee, Je-Hoon;Han, Yu-Hee
    • Laser Solutions
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    • v.3 no.2
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    • pp.35-43
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    • 2000
  • Laser direct patterning of the coated photoresit (PMER-NSG31B) layer was studied to make halftone dots on gravure printing roll. The selective laser hardening of photoresist by Ar-ion laser(wavelength : 333.6nm∼363.8nm) was controlled by the A/O modulator. The coating thickness in the range of 5㎛∼11㎛ could be obtained by using the up-down directional moving device along the vertically located roll. The width, thickness and hardness of the hardened lines formed under laser power of 200∼260㎽ and irradiation time of 4.4∼6.6$\mu$ sec/point were investigated after developing. The hardened width increased according to the increase of coating thickness. Though the hardened thickness was changed due to the effect of the developing solution, the hardened layer showed good resistance to the scratching of 2H pencil. Also, the hardened minimum line widths of 10㎛ could be obtained. The change of line width was also found after etching, and the minimum line widths of 6㎛ could be obtained. The hardened lines showed the good resistance to the etching solution. Finally, the experimental data could be applied to make gravure halftone dots using the developed imaging process, successfully.

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Hydrogen Plasma Characteristics for Photoresist Stripping Process in a Cylindrical Inductively Coupled Plasma

  • Yang, Seung-Kook;Cho, Jung Hee;Lee, Seong-Wook;Lee, Chang-Won;Park, Sang-Jong;Chae, Hee-Sun
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.13 no.4
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    • pp.387-394
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    • 2013
  • As the feature size of integrated circuits continues to decrease, the challenge of achieving an oxidation-free exposed layer after photoresist (PR) stripping is becoming a critical issue for semiconductor device fabrication. In this article, the hydrogen plasma characteristics in direct plasma and the PR stripping rate in remote plasma were studied using a $120{\Phi}$ cylindrical inductively coupled plasma source. E mode, H mode and E-H mode transitions were observed, which were defined by matching the $V_{rms}$ and total impedance. In addition, the dependence of the E-H mode transition on pressure was examined and the corresponding plasma instability regions were identified. The plasma density and electron temperature increased gradually under the same process conditions. In contrast, the PR stripping rate decreased with increasing proportion of $H_2$ gas in mixed $H_2/N_2$ plasma. The decrease in concentration of reactive radicals for the removal of PR with increasing $H_2$ gas flow rate suggests that NH radicals have a dominant effect as the main volatile product.

Gravure Halftone Dots by Laser Direct Patterning

  • Jeong Suh;Lee, Jae-Hoon
    • International Journal of Precision Engineering and Manufacturing
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    • v.3 no.1
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    • pp.26-32
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    • 2002
  • Laser direct patterning of the coated photoresist (PMER-NSG31B) layer was studied to make halftone dots on the gravure printing roll. The selective laser hardening of the photoresist by Ar-ion laser(wavelength: 333.6∼363.8 nm) was controlled by the A/O modulator. The coating thickness in the range of 5∼11㎛ could be obtained by using the up-down directional moving device along the vertically located roll. The width, thickness and hardness of the hardened lines farmed under the laser power of 200∼260mW and irradiation time of 4.4∼6.6 $\mu$ sec/point were investigated after developing. The hardened width increased as the coating thickness increased. Though the hardened thickness was changed due to the effect of the developing solution, the hardened layer showed good resistance to the scratching of 2H pencil. Also, the hardened minimum line width of 10㎛ could be obtained. The change of line width was also found after etching, and the minimum line widths of 6㎛ could be obtained. The hardened lines showed the good resistance to the etching solution. Finally, the experimental data could be applied to make gravure halftone dots using the developed imaging process, successfully.

Self-Aligned Offset Poly-Si TFT using Photoresist reflow process (Photoresist reflow 공정을 이용한 자기정합 오프셋 poly-Si TFT)

  • Yoo, Juhn-Suk;Park, Cheol-Min;Min, Byung-Hyuk;Han, Min-Koo
    • Proceedings of the KIEE Conference
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    • 1996.07c
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    • pp.1582-1584
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    • 1996
  • The polycrystalline silicon thin film transistors (poly-Si TFT) are the most promising candidate for active matrix liquid crystal displays (AMLCD) for their high mobilities and current driving capabilities. The leakage current of the poly-Si TFT is much higher than that of the amorphous-Si TFT, thus larger storage capacitance is required which reduces the aperture ratio fur the pixel. The offset gated poly-Si TFTs have been widely investigated in order to reduce the leakage current. The conventional method for fabricating an offset device may require additional mask and photolithography process step, which is inapplicable for self-aligned source/drain ion implantation and rather cost inefficient. Due to mis-alignment, offset devices show asymmetric transfer characteristics as the source and drain are switched. We have proposed and fabricated a new offset poly-Si TFT by applying photoresist reflow process. The new method does not require an additional mask step and self-aligned ion implantation is applied, thus precise offset length can be defined and source/drain symmetric transfer characteristics are achieved.

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Reflectivity Control at Substrate / Photoresist Interface by Inorganic Bottom Anti-Reflection Coating for Nanometer-scaled Devices

  • Kim, Sang-Yong;Kim, Yong-Sik
    • Transactions on Electrical and Electronic Materials
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    • v.15 no.3
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    • pp.159-163
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    • 2014
  • More accurate CD (Critical Dimension) control is required for the nanometer-scaled devices. However, since the reflectivity between substrate and PR (Photoresist) becomes higher, the CD (Critical Dimension) swing curve was intensified. The higher reflectivity also causes PR notching due to the pattern of sub-layer. For this device requirement, it was optimized for the thickness, refractive index(n) and absorption coefficient(k) in the bottom anti-reflective coating(BARC; SiON) and photoresist with the minimum reflectivity. The computational simulated conditions, which were determined with the thickness of 33 nm, n of 1.89 and k of 0.369 as the optimum condition, were successfully applied to the experiments with no standing wave for the 0.13um-device. At this condition, the lowest reflectivity was 0.44%. This optimum condition for BARC SiON film was applied to the process for 0.13um-device. The optimum SiON film as BARC to PR and sub-layer could be formed with the accurate CD control and no standing waver for the nanometer-scaled semiconductor manufacturing process.

Fabrication of $100{\mu}m$ thick mold and electroplating using thick photoresist (후막 감광제를 이용한 $100{\mu}m$ 두께 몰드 제작과 전해도금)

  • Jung, Hyoung-Kyoon;Ahn, Si-Hong;Kim, Yong-Kweon
    • Proceedings of the KIEE Conference
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    • 2002.07c
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    • pp.2008-2010
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    • 2002
  • Process conditions of a novel negative thick photoresist, JSR THB-$430N^{(R)}$, are established in this paper. Although SU-8 obtains uniform and high-aspect-ratio structures, it is hard to remove the SU-8 mold after electroplating. The JSR THB-$430N^{(R)}$ can be more easily removed than the SU-8 and has a low internal stress. Introducing two step strip processes using acetone and the jSR THB-$S1^{(R)}$, the JSR THB-$430N^{(R)}$ electroplating mold was removed completely and a JSR THB-$430N^{(R)}$ film stress is compressive less than 2 MPa. In this paper, we obatined $200{\mu}m$ thick PR structure and $100{\mu}m$ thick electroplated nickel structure using the JSR THB-$430N^{(R)}$ photoresist.

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Synthesis and Characterization of Photosensitive Naphthoquinonediazide-sulfonyl Derivatives (나프토 퀴논 디아지드 유도체의 합성 및 그 감광 특성)

  • Joo, So-Young;Hong, Sung-Il
    • Applied Chemistry for Engineering
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    • v.1 no.2
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    • pp.116-123
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    • 1990
  • Synthesis and characterization of photosensitive orthonaphthoquinonediazide-sulfonyl derivatives were studied. These photoactive compounds underwent a UV induced transformation to the base-soluble photoproduct. The photoresists were prepared using these photoactive compounds with low molecular weight m-cresol novolacs as matrix resin. And photosensitive characteristics of the photoresists were studied. 3, 4, 5-Trihydroxy-benzophenone with bulky resonance structure increased the sensitivity and the solubility rate of the exposed region. The mixture of PAC and matrix resin having 3:8 weight ratio had the moderate rate of dissolution in the developer. The photoresist using these conditions showed the best snsitivity and contrast under the fixed conditions.

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Characteristics of Poly(methylphenyl)silane Photoreists (Poly(methylpheny) Silane Photoresist의 특성)

  • Kang, Doo-Whan;Chung, Nak-Jin
    • Applied Chemistry for Engineering
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    • v.1 no.2
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    • pp.161-167
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    • 1990
  • Polymethylphenylsilane(PMPS) was synthesized with methylphenyldichlorosilane using metal sodium. Various sample coated on quartz plate were exposed and the yield of residual film was calculated. To obtain the fine image forming after developing and drying, optical transmittance characterization have to be considered. Exposure is described by three optical parameters X, Y, and Z. There parameters are normally determined from optical transmittance measurements of exposed PMPS films. Z parameter was determined from the initial slope of a transmittance according to exposure time. This set of function parameters provided a complete description of photoresist exposure and development and became the basis for the theoretical process models.

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