• Title, Summary, Keyword: Photoresist

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Self-Aligned Offset Poly-Si TFT using Photoresist reflow process (Photoresist reflow 공정을 이용한 자기정합 오프셋 poly-Si TFT)

  • Yoo, Juhn-Suk;Park, Cheol-Min;Min, Byung-Hyuk;Han, Min-Koo
    • Proceedings of the KIEE Conference
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    • pp.1582-1584
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    • 1996
  • The polycrystalline silicon thin film transistors (poly-Si TFT) are the most promising candidate for active matrix liquid crystal displays (AMLCD) for their high mobilities and current driving capabilities. The leakage current of the poly-Si TFT is much higher than that of the amorphous-Si TFT, thus larger storage capacitance is required which reduces the aperture ratio fur the pixel. The offset gated poly-Si TFTs have been widely investigated in order to reduce the leakage current. The conventional method for fabricating an offset device may require additional mask and photolithography process step, which is inapplicable for self-aligned source/drain ion implantation and rather cost inefficient. Due to mis-alignment, offset devices show asymmetric transfer characteristics as the source and drain are switched. We have proposed and fabricated a new offset poly-Si TFT by applying photoresist reflow process. The new method does not require an additional mask step and self-aligned ion implantation is applied, thus precise offset length can be defined and source/drain symmetric transfer characteristics are achieved.

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Fabrication of $100{\mu}m$ High Metallic Structure Using Negative Thick Photoresist and Electroplating (Negative Thick Photoresist를 이용한 $100{\mu}m$ 높이의 금속 구조물의 제작에 관한 연구)

  • Chang, Hyun-Kee;Kim, Yong-Kweon
    • Proceedings of the KIEE Conference
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    • pp.2541-2543
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    • 1998
  • This paper describes the fabrication process to fabricate metallic structure of high aspect ratio using LlGA-like process. SU-8 is used as an electroplating mold. SU-8 is an epoxy-based photoresist, designed for ultrathick PR structure with single layer coating [1,2]. We can get more than $100{\mu}m$ thick layer by single coating with conventional spin coater, and applying multiple coating can make thicker layers. In the experiments, we used different kinds of SU-8, having different viscosity. To optimize the conditions for mold fabrication process, experiments are performed varying spinning time and speed, soft-bake, develop and PEB (Post Expose Bake) condition. With the optimized condition, minimum line and space of $3{\mu}m$ pattern with a thickness of $40{\mu}m$ and $4{\mu}m$ pattern with a thickness of $130{\mu}m$ were obtained. Using the patterned PR as a plating mold, metallic structure was fabricated by electroplating. We have fabricated a electroplated nickel comb actuator using SU-8 as plating mold. The thickness of PR mold is $45{\mu}m$ and that of plated nickel is$40{\mu}m$. Minimum line of the mold is $5{\mu}m$. Patterned metallic layer or polymer layer, which has selectivity with the structural plated metallic layer, can be used as sacrificial layer for fabrication of free-standing structure.

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Laser Direct Patterning of Photoresist Layer for Halftone Dots of Gravure Printing Roll (그라비아 인쇄물의 망점 형성을 위한 포토레지스터 코팅층의 레이저 직접 페터닝)

  • Seo, Jung;Lee, Je-Hoon;Han, Yu-Hee
    • Laser Solutions
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    • v.3 no.2
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    • pp.35-43
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    • 2000
  • Laser direct patterning of the coated photoresit (PMER-NSG31B) layer was studied to make halftone dots on gravure printing roll. The selective laser hardening of photoresist by Ar-ion laser(wavelength : 333.6nm∼363.8nm) was controlled by the A/O modulator. The coating thickness in the range of 5㎛∼11㎛ could be obtained by using the up-down directional moving device along the vertically located roll. The width, thickness and hardness of the hardened lines formed under laser power of 200∼260㎽ and irradiation time of 4.4∼6.6$\mu$ sec/point were investigated after developing. The hardened width increased according to the increase of coating thickness. Though the hardened thickness was changed due to the effect of the developing solution, the hardened layer showed good resistance to the scratching of 2H pencil. Also, the hardened minimum line widths of 10㎛ could be obtained. The change of line width was also found after etching, and the minimum line widths of 6㎛ could be obtained. The hardened lines showed the good resistance to the etching solution. Finally, the experimental data could be applied to make gravure halftone dots using the developed imaging process, successfully.

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Formation of Fine Pitch Solder Bumps on Polytetrafluoroethylene Printed Circuit Board using Dry Film Photoresist (Dry Film Photoresist를 이용한 테프론 PCB 위 미세 피치 솔더 범프 형성)

  • Lee Jeong Seop;Ju Geon Mo;Jeon Deok Yeong
    • Proceedings of the International Microelectronics And Packaging Society Conference
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    • pp.169-173
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    • 2003
  • We demonstrated the applicability of dry film photoresist (DFR) in photolithography process for fine pitch solder bumping on the polytetrafluoroethylene (PTFE/Teflon) printed circuit board (PCB). The copper lines were formed with $100\;{\mu}m$ width and $18\;{\mu}m$ thickness on the PTFE test board, and varying the gaps between two copper lines in a range of $100-200\;{\mu}m$. The DFRs of $15\;{\mu}m$ thickness were laminated by hot roll laminator, by varying laminating temperature from $100^{\circ}C\;to\;150^{\circ}C$ and laminating speed. We found the optimum process of DFR lamination on PTFE PCB and accomplished the formation of indium solder bumps. The optimum lamination condition was temperature of $150^{\circ}C$ and speed of about 0.63 cm/s. And the smallest size of indium solder bump was diameter of $50\;{\mu}m$ with pitch of $100\;{\mu}m$.

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A Study on Photoresist Stripping and Damage Using Atmospheric Pressure Plasma (대기압 플라즈마를 이용한 감광제 제거 공정과 damage에 관한 연구)

  • Hwang, In-Uk;Yang, Seung-Kook;Song, Ho-Young;Park, Se-Geun;O, Beom-Hoan;Lee, Seung-Gol;Lee, El-Hang
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.152-155
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    • 2003
  • Ashing of photoresist was investigated in dielectric barrier discharges in atmospheric pressure by changing applied voltage, frequency, flow rate. we analyzed the plasma by Optical Emission Spectroscopy(OES) to monitor the variation of active oxygen species. Another new peaks of oxygen radical is observed by addition of argon gas. This may explain the increase in ashing rate with argon addition. With the results of Optical Emission Spectroscopy(OES), we can find the optimized ashing conditions. MIS capacitor for monitoring charging damage by the plasma was also studied. The results suggest the dielectric barrier discharges(DBD) can be an efficient, alternative Plasma source for general surface processing.

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Synthesis and Characterization of Photosensitive Naphthoquinonediazide-sulfonyl Derivatives (나프토 퀴논 디아지드 유도체의 합성 및 그 감광 특성)

  • Joo, So-Young;Hong, Sung-Il
    • Applied Chemistry for Engineering
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    • v.1 no.2
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    • pp.116-123
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    • 1990
  • Synthesis and characterization of photosensitive orthonaphthoquinonediazide-sulfonyl derivatives were studied. These photoactive compounds underwent a UV induced transformation to the base-soluble photoproduct. The photoresists were prepared using these photoactive compounds with low molecular weight m-cresol novolacs as matrix resin. And photosensitive characteristics of the photoresists were studied. 3, 4, 5-Trihydroxy-benzophenone with bulky resonance structure increased the sensitivity and the solubility rate of the exposed region. The mixture of PAC and matrix resin having 3:8 weight ratio had the moderate rate of dissolution in the developer. The photoresist using these conditions showed the best snsitivity and contrast under the fixed conditions.

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Characteristics of Poly(methylphenyl)silane Photoreists (Poly(methylpheny) Silane Photoresist의 특성)

  • Kang, Doo-Whan;Chung, Nak-Jin
    • Applied Chemistry for Engineering
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    • v.1 no.2
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    • pp.161-167
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    • 1990
  • Polymethylphenylsilane(PMPS) was synthesized with methylphenyldichlorosilane using metal sodium. Various sample coated on quartz plate were exposed and the yield of residual film was calculated. To obtain the fine image forming after developing and drying, optical transmittance characterization have to be considered. Exposure is described by three optical parameters X, Y, and Z. There parameters are normally determined from optical transmittance measurements of exposed PMPS films. Z parameter was determined from the initial slope of a transmittance according to exposure time. This set of function parameters provided a complete description of photoresist exposure and development and became the basis for the theoretical process models.

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A Development on the Non-Photomask Plate Making Technology for Screen Printing (III) (포토마스크가 필요 없는 스크린 제판 기술 개발(III))

  • Kang, Hyo-Jin;Park, Kyoung-Jin;Kim, Sung-Bin;Nam, Su-Yong;Ahn, Byung-Hyun
    • Journal of the Korean Printing Society
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    • v.26 no.2
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    • pp.55-64
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    • 2008
  • We designed a UV-LED exposure system which has 365nm dominant wavelength due to the environment-friendly and economical maskless screen plate making. And the photoresist applied on the screen stretched was exposed without mask by beam projector with UV-LED light source. Then it was developed by air spray with $1.7\;kgf/cm^2$ of injection pressure. The pencil hardness and solvent resistance of curing photoresist film were excellent as those of conventional photoresist film and the maximum resolution of line image formed by maskless screen plate making. was $100{\mu}m$, so we could establish the possibility of environment-friendly maskless screen plate making technology. But the sharpness of the patterns were ${\pm}40{\mu}m$ since the exposure system for maskless plate making has weak light intensity and the diffusion of light.

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대기압 플라즈마 Photoresist Ashing에 관한 연구

  • ;Kim, Yun-Hwan;Lee, Sang-Ro
    • Proceedings of the Korean Vacuum Society Conference
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    • pp.464-464
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    • 2012
  • 본 연구에서는 DBD (Dielectric Barrier Discharge)방식을 통해 발생된 대기압 plasma를 이용한 Photoresist (PR) Ashing에 관한 연구를 하였다. 사용된 DBD 반응기는 기존의 blank planar plate 형태의 Power가 인가되는 anode 부분과 Dielectric Barrier 사이 공간을 액상의 도전체로 채워 넣은 형태의 전극이 사용 하였으며, 인가 Power는 40 kHz AC 최대 인가 전압 15 kV를 사용 하였고(본 연구에서 인가 power는 30 KHz,전압 14 KV를 고정시킴) 플라즈마를 발생시 라디칼의 활성화를 유지하기 위해 전극 온도가 $180^{\circ}C$ 정하였다. Feeding 가스는 N2, 반응가스로는 CDA(Clean Dry Air), SF6와 CF4가스를 사용 하였으며 모든 공정은 In-line type으로 시편을 처리 하였다. CDA ratio의 경우에 질소대비 0.2%때 이송속도 30 mm/sec 1회 처리 기존 PR ashing은 최대 $320{\AA}$의 ashing 두께를 얻을 수 있었다. SF6와 CDA가스를 같이 반응하는 경우 ratio는 CDA : SF6 = 0.6% : 0.6%에서 PR ashing rate이 $841{\AA}/pass$의 값을 얻을 수 있었고, CDA가스만 첨가하는 경우보다 약2.6배 증가함을 관찰할 수 있었다. CF4 가스를 사용하는 경우 ratio는 CDA : CF4 = 0.2% : 0.2%에서 PR ashing rate이 $687{\AA}/pass$의 값을 얻을 수 있으며 CDA가스만 첨가하는 경우보다 약 2.1배 증가함을 관찰할 수 있었다. 그리고 PR ashing rate가 가스첨가종류와 비율에 따라서 변화함을 관찰하였고 최적조건을 찾기 위해 연구를 진행하였다. 추후 PR ashing rate가 향상을 하기 위해 가스혼합비율 및 stage 온도등 조건을 조절하여 공정최적조건을 얻기 위해 연구를 진행하였다.

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Stripping of High-Dose Ion-Implanted Photoresist Using Co-solvent and Ultra-sonication in Supercritical Carbon Dioxide (초임계이산화탄소 내에서 공용매 및 초음파를 이용한 고농도이온주입 포토레지스트의 제거)

  • Kim, Seung-Ho;Lim, Kwon-Taek
    • Clean Technology
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    • v.15 no.2
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    • pp.69-74
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    • 2009
  • A high-dose ion-implanted photoresist (HDIPR) was stripped off from the surface of a semiconductor wafer by using a mixture of supercritical carbon dioxide and a co-solvent. The additional ultrasonication improved the stripping efficiency remarkably and thus reduced the stripping time by supplying physical force to the substrate. We investigated the effect of co-solvents, co-solvent concentration, and stripping temperature and pressure on the stripping efficiency. The wafer surfaces before and after stripping were analyzed by scanning electron microscopy and by an energy dispersive X-ray spectrometer. The HDIPR could be stripped off completely in 3 min with 10%(w/w) acetone/sc$C0_2$ mixture at 27.6 MPa and 343 K.

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