• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.242-242
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• 2008

반도체 공정에서 일정한 패턴을 만들기 위하여 Photoresist (PR)를 이용한 식각 공정을 사용하게 된다. 이러한 식각 공정은 반도체 직접도가 증가되면서 더욱 많은 단계의 공정을 요구하게 되었다. 그러나 식각 공정의 증가는 반도체 소자 생산을 위한 더 많은 시간과 비용을 요구하게 된다. 이를 해결하기 위하여 Photoresist를 사용하지 않은 공정으로 공정 단계를 간소화하기 위한 연구를 진행하고 있지만 아직 명확한 대한은 없다. 본 연구에서 는 PR의 strip 시간을 최대한 단축시키고 PR strip 잔여물의 빠른 제거를 위하여 기존 공정에서 사용 중인 strip 약 액을 플라즈마에 의하여 활성화하는 방법으로 PR strip 시간을 최대한 줄이는 방법에 대한 연구를 진행하였으며, 활성화된 strip용액이 더욱 빠른 strip율을 나타내는 것을 확인하였다. 또한 약액 활성화 방법으로 활성화된 strip 용액으로 PR을 일부 제거한 후 PR 표면의 물리적 특성 변화를 분석하여 약액 활성화된 strip 용액으로 인한 PR의 특성을 물리적 방법으로 접근하여 연구를 진행하였다.

• Journal of the Korean Vacuum Society
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• v.17 no.6
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• pp.544-548
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• 2008

At the semiconductor industry, Photoresist(PR) strip progress has high cost and time consuming process. Accordingly, many research group have been focused on the shortening of the PR strip progress. But the replacements of newly developed materials rather than normally used strip have accompanied by cost consumption. Therefore, we suggested the Plasma Liquid-Vapor Activation (PLVA) method of general PR strip solution for saving the PR strip time and the high strip rate of PR residue. The PLVA method was very effective for PR strip progress. Also, the ion damaged PR(high dose implanted photoresist: HDI-PR) was almost impossible to strip. However, it was very difficult to characterize the change of chemical composition of HDI-PR between with and without PLVA method. Thus, physical properties of HDI-PR surface with and without PLVA method were measured by using the nano-indenter system.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.12
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• pp.591-596
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• 2006

we have been developed on the ultra high concentration ozone generator system which is the core technology in the realization of the semiconductor photoresist strip process using the ozone-vapor chemistry. The proposed ozone generator system has the structure of the surface discharge type which adopt the high purity ceramic dielectric tube. We investigate the performance of the proposed ozone generator system experimentally and the results show that the system has very high ozone concentration characteristics of $19.7[wt%/O_2]$ at the flow rate of $0.3[{\ell}/min]$ of each discharge cell. As a result of the silicon wafer photoresist strip test, we obtained the strip rate of about 400[nm/min] at the ozone concentration of $16[wt%/O_2]$ and flow rate of $8[{\ell}/min]$. So, we confirmed that it's possible to use the proposed high concentration ozone generator system for the ozone-vapor photoresist strip process in the semiconductor and FPD industry.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.22-23
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• 2006

A process for removal of photoresist(PR) m semiconductor manufacturing using water vapor with ozone is presented. For the realization of the ozone/vapor mixture process, high concentration ozone generator and process facilities have developed. As a result of the silicon wafer PR strip test, we confirmed the high efficiency PR strip rates of 400nm/mm or more at the ozone concentration of 16wt%/$O_2$. The ozone/vapor mixture process is more effective than the ozonized water Immersion process.

• Journal of the Korean Vacuum Society
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• v.17 no.2
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• pp.113-116
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• 2008

As the integration in semiconductor display develops, semiconductor process becomes multilayer. In order to form several layer patterns, etching process which uses photoresistor (PR) must be performed in multilayer process. Repeated etching processes which take long time and PR residue cause mortal problems in semiconductor. To overcome such problems, we studied about the solution which eliminates PR effectively by using normal dry and wet etching method using plasma activated PR strip solvent in liquid condition. At first, we simulate the device which activates the plasma and make sure whether gas flow in device is uniform or not. Under activated plasma, etching effect is elevated. This improvement reduces etching time as well as display production time of semiconductor process. Generally, increasing etching process increases environmental hazards. Reducing etching process can save the etchant and protect environment as well.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.11
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• pp.1143-1148
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• 2004

In this study, photoresist stripping in semiconductor or LCD (liquid crystal display) fabrication processes using DIO, was investigated. In order to obtain the high PR stripping efficiency of DIO. we have developed new ozone-generating system with high ozone concentration and ozone-resolving system with high contact ratio. In this study, we obtained ozone gas concentrations of 11 % by new ozone-generating system, ozone-resolving efficiency of 99.5 % and maximum solubility of 130 ppm in deionized water. We applied the newly designed equipments to photoresist stripping processes and obtained similar results to SPM(sulfuric-peroxide mixture) process characteristics.

• 연구논문집
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• s.33
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• pp.99-109
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• 2003

Recently the utilization of the ozone dissolved de-ionized water(DIW-$O_3$) in semiconductor wet cleaning process and photoresist stripping process to replace the conventional sulfuric acid and hydro peroxide mixture(SPM) method has been studied. In this paper, we propose the water-electrode type ozone generator which has the characteristics of the high concentration and purity to produce the high concentration DIW-$O_3$ for the photoresist strip process in the semiconductor fabrication. The proposed ozone generator has the dual dielectric tube structure of silent discharge type and the water is both used to electrode and cooling water. Through this study, we obtained the results of the 10.3 wt% of ozone gas concentration at the oxygen gas of 0.5 [liter/min.] and the DIW-$O_3$ concentration of 79.5 ppm.. Through the photoresist stripping test using the produced DIW-$O_3$, we confirmed that the photoresist coated on the silicon wafer was removed effectively in the 12 minutes.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.11
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• pp.977-982
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• 2007

The realization of the photoresist(PR) removal method with vaporized water and ozone gas mixture has been studied for the LCD TFT array manufacturing. The developed PR stripper uses the water boundary layer control method based on the high concentration ozone production technology. We develop the prototype of PR stripper and experiment to find the optimal process parameter condition like as the ozone gas flow/concentration, process reaction time and thin boundary layer formation. As a results, we realize the LCD PR strip rate over the 0.4 ${\mu}m/min$ and this PR removal rate is more than 5 times higher than the conventional immersion type ozonized water process.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.1
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• pp.22-27
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• 2007

we have been studied on the realization of the boundary layer controlled ozone process and related facilities in order to apply for the photo-resist strip process in the semiconductor and flat panel display manufacturing. By means of developing the technology for the high concentration ozone production, it was possible to realized the boundary layer control ozone process by vapor. As a result of the silicon wafer PR strip test, we obtained the strip rate of about 400nm/min at the ozone concentration of 16wt% and flow rate of 8[liter/min.].

• Clean Technology
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• v.24 no.3
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• pp.175-182
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• 2018

In this research, we investigated the cleanliness by optimizing the water content of the aqueous stripper in fluidic strip process. The stripping properties of the photoresist with optimized aqueous stripper were compared with the commercial organic stripper. The stripping performance was evaluated by electrical and optical characteristics on the surface of the transparent electrode that compare with stripped the transparent electrode surface and the rare surface before patterning by the photoresist. As a result of the photoresist stripping process of the organic stripper and the aqueous stripper optimized for water content, the aqueous stripper exhibited better electrical and optical characteristics than the organic stripper. In the case of the fluidic strip process with organic stripper, the photoresist dissolves in the stripper solution during stripping which can cause re-adsorption by contamination. Whereas that the aqueous stripper under development seems to decrease the photoresist dissolution in the stripper solution. Because the cyclodextrin contained in the stripper captures organic photoresist into hall of cyclodextrin which stripped through swelling and tearing. The photoresist residue captured by the cyclodextrin can be filtered. After the fluidic stripping process by different chemical stripping mechanism, the cleanliness of the organic stripper and aqueous stripper was compared and analyzed.