• Progress in Medical Physics
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• v.23 no.4
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• pp.279-284
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• 2012

The X ray has been widely used in both diagnosis and treatment. Recently, a miniature X ray tube has been developed for radiotherapy. The miniature X ray tube is directly inserted into the body irradiated, so that X rays can be guided to a target at various incident angles according to collimator geometry and, thus, minimize patient dose. If such features of the miniature X ray tube can be applied to development of X ray imaging as well as radiation treatment, it is expected to open a new chapter in the field of diagnostic X ray. However, the miniature X ray tube requires an added filter and a collimator for diagnostic purpose because it was designed for radiotherapy. Therefore, a collimator and an added filter were manufactured for the miniature X ray tube, and mounted on. In this study, we evaluated beam characteristics of the miniature X ray tube for diagnostic X ray system and accuracy of measuring the HVL. We used the Si PIN Photodiode type Piranha detector (Piranha, RTI, Sweden) and estimated the HVL of the miniature X ray tube with added filter and without added filter. Through an another measurement using Al filter, we evaluated the accuracy of the HVL obtained from a direct measurement using the automatic HVL calculation function provided by the Piranha detector. As a result, the HVL of the miniature X ray tube was increased around 1.9 times with the added filter mounted on. So we demonstrated that the HVL was suitable for diagnostic X ray system. In the case that the added filter was not mounted on, the HVL obtained from use of the automatic HVL calculation function provided by Piranha detector was 50% higher than the HVL estimated using Al filter. Therefore, the HVL automatic measurement from the Piranha detector cannot be used for the HVL calculation. However, when the added filter was mounted on, the HVL automatic measurement value using the Piranha detector was approximately 15% lower than the estimated value using Al filter. It implies that the HVL automatic measurement can be used to estimate the HVL of the miniature X ray tube with the added filter mounted on without a more complicated measurement method using Al filter. It is expected that the automatic HVL measurement provided by the Piranha detector enables to make kV-X ray characterization easier.

• Korean Journal of Materials Research
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• v.6 no.4
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• pp.395-400
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• 1996

반도체 소자가 점점 고집적회되고 고성능화되면서 Si 기판 세정 방법은 그 중요성이 더욱 더 커지고 있다. 특히 ULSI급 소자에서는 세정 방법이 소자 생산수율 및 신뢰성에 큰 영향을 끼치고 있다. 본 연구에서는 HF-last 세정에 UV/O3과 SC-1 세정을 삽입하여 그 영향을 관찰하였다. 세정 방법은 HF-last 세정을 기본으로 split 1(piranha+HF), split 2(piranha+UV/O3+HF), split 3(piraha+SC-1+HF), split 4(piranha+(UV/O3+HF) x3회 반복)의 4가지 세정 방법으로 나누어 실험하였다. 세정을 마친 Si 기판은 Total X-Ray Fluorescence Spectroscopy(AFM)을 사용하여 표면거칠기를 측정하였다. 또한 세정류량을 측정하고, Atomic Force Microscopy(AFM)을 사용하여 표면거칠기를 측정하였다. 또한 세정후 250$\AA$의 gate 산화막을 성장시켜 전기적 특성을 측정하였다. UV/O3을 삽입한 split 2와 split 4세정방법이 물리적, 전기적 특성에서 우수한 특성을 나타냈고, SC-1을 삽입한 split 3세정 방법이 표준세정인 split 1세정 방법보다 우수하지 못한 결과를 나타냈다.

• Korean Journal of Materials Research
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• v.8 no.6
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• pp.532-537
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• 1998

The purpose of this study was to investigate the behavior of ozone in DI water and the reaction with wafers during the semiconductor wet cleaning process. The solubility of ozone in DI water was not only dependent on the temperature but also directly proportional to the input concentration of ozone. The lower the initial ozone concentration and the temperature, the longer the half-life time of ozone. The reaction order of ozone in DI water was calculated to be around 1.5. The redox potential reached a saturation value in 5min and slightly increased as the input ozone concentrations increased. The completely hydrophilic surface was created in Imin when HF etched silicon wafer was cleaned in ozonized DI water containing higher ozone concentrations than 2ppm. Spectroscopic ellipsometry measurements showed that the chemical oxide formed by ozonized DI water was measured to be thicker than that by piranha solution. The wafers contaminated with a non-ionic surfactant were more effectively cleaned in ozonized DI water than in piranha and ozonized piranha solutions.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.10a
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• pp.39-39
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• 2003

• Journal of the Korean institute of surface engineering
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• v.54 no.6
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• pp.365-370
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• 2021

In this research, we proceeded with research on plasma resistance of the cleaning process of APS(Atmospheric Plasma Spray)-Y₂O₃ coated parts used for semiconductor and display plasma process equipment. CF₄, O₂, and Ar mixed gas were used for the plasma environment, and respective alconox, surfactant, and piranha solution was used for the cleaning process. After APS-Y₂O₃ was exposed to CF₄ plasma, the surface changed from Y₂O₃ to YF₃ and a large amount of carbon was deposited. For this reason, the plasma corrosion resistance was lowered and contamination particles were generated. We performed a cleaning process to remove the defect-inducing surface YF₃ layer and carbon layer. Among three cleaning solutions, the piranha cleaning process had the highest detergency and the alconox cleaning process had the lowest detergency. Such results could be confirmed through the etching amount, morphology, composition, and accumulated contamination particle analysis results. Piranha cleaning process showed the highest detergency, but due to the very large thickness reduction, the base metal was exposed and a large number of contaminated particles were generated. In contrast, the surfactant cleaning process exhibit excellent properties in terms of surface detergency, etching amount, and accumulated contamination particle analysis.

• Journal of radiological science and technology
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• v.35 no.2
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• pp.119-124
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• 2012

Recently, Glass Dosimeter (GD) with thermoluminescent Dosimeter (TLD) are comprehensively used to measure absorbed dose from diagnostic field to therapy field that means from low energy field to high energy field. However, such studies about dose characteristics of GD, such as reproducibility and energy dependency, are mostly results in high energy field. Because characteristic study for measurement devices of radiation dose and radiation detector is performed using 137Cs and 60Co which emit high energy radiations. Thus, this study was evaluated the linearity according to Piranha dose which measured by changing tube voltage (50kV, 80kV and 100kV which are low energy radiations), reproducibility and reproducibility according to delay time using GD. Measurement of radiation dose is performed using internal detector of Piranha 657 which is multi-function QA device (RTI Electronic, Sweden). Condition of measurement was 25mA, 0.02sec, 2.5mAs, SSD of 100 cm and exposure area with $10{\times}10cm^2$. As above method, GD was exposed to radiation. Sixty GDs were divided into three groups (50kV, 80kV, 100kV), then measured. In this study, GD was indicated the linearity in low energy field as high energy existing reported results. The reproducibility and reproducibility according to delay time were acceptable. In this study, we could know that GD can be used to not only measure the high energy field but also low energy field.

• Journal of radiological science and technology
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• v.37 no.2
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• pp.135-141
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• 2014

This study was evaluated the linearity and reproducibility according to dose, and reproducibility according to delay time by changing tube current amount (5 mAs, 10 mAs, 16 mAs, 20 mAs, 25 mAs, 32 mAs respectively, which are low energy radiations) using Glass Dosimeter (GD) and piranha semiconductor dosimeter which are used for measuring exposure dose. Measurements of radiation dose were performed using external detector of piranha 657 which is multi-function QA device (RTI Electronic, Sweden). Conditions of measurement were 80 kVp, SSD 100 cm and exposure region is $10cm{\times}10cm$. Glass dosimeter was exposed to radiation. Twenty-four glass dosimeters were divided into six groups (5 mAs, 10 mAs, 16 mAs, 20 mAs, 25 mAs, 32 mAs respectively), then measured. This study was resulted by measuring the linearity and reproducibility according to change of tube current in low energy field. In dose characteristic of GD, this study could be useful as previous study with regard to dose characteristic according to change of tube voltage in low energy field.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.15 no.6
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• pp.209-215
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• 2015

Following the semiconductor industry's growing, various types of toxic gases and caustic chemicals, HF(Hydrofluoric acid), HCI (Hydochloric acid), $H_2O_2$ (Hydrogen peroxide), $H_2SO_4$ (Sulfuric acid), and Piranha, were using on the semiconductor manufacturing process. Therefore many gas leakage accidents that produce huge losses of lives were caused by the processes. This research deeply considers two basic solutions that the necessity of MSDS education on university for reducing damage of lives and protecting life from chemical leak accidents such as a HF accident in Gumi, Korea and the use of GHS, REACH and the comprehension of propriety about using MSDS for keeping safety from conflagrations by released poison chemical materials.

• Proceedings of the IEEK Conference
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• 1998.06a
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• pp.473-476
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• 1998

ULSI 소자에서 폴리사이드 구조를 사용하고 dual 게이트 산화막에 대한 공정 특성을 최적화 하는 2스텝 게이트 산화막의 형성 공정에 관한 연구를 하였다. 이러한 특성의 측정은 HP4145B 파라메터 분석기와 C-V meter 그리고 multi-frequency LcR meter를 사용하여 2스텝 산화막의 공정 방법과 cleaning에 따른 게이트 사화막의 공정 특성에 대한 연관 관계로 연구하였다. I-V 특성 면에서는 G$_{ox}$ 80.angs.의 경우 base 210.angs.의 경우에서는 dual 210.angs.의 특성이 base 210.angs.에 비하여 상대적으로 열화된 특성을 나타내었다. CCST 결과에서는 G$_{OX}$ 80.angs.과 210.angs.에서 dual 게이트 산화막의 cleaning 방법으로 piranha cl'n 과 SCl cl'n 방법에서 우수한 결과를 얻을 수 있었다. 또한 게이트 전압의 벼화량에 대한 결과에서는 dual 산화막의 경우 초기상태에서는 호울포획 현상이 나타나다가 이후에는 전자포획 현상이 나타나는 결과를 얻었다.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.423.1-423.1
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• 2014

본 발표에서는 실리콘 이종접합 태양전지에서 중요한 실리콘 웨이퍼 표면/계면 제어에 대하여 발표한다. 다시 말하여, 실리콘 웨이퍼 기판 세정공정 변화에 따른 실리콘 웨이퍼 표면의 소수전하수명(minority carrier lifetime, MCLT) 및 태양전지 소자특성 변화에 대하여 연구하였다. 구체적으로, 실리콘 웨이퍼 클리닝 최초단계로써 KOH damage etching 공정을 도입할 때, 이후 클리닝 공정을 통일하여 적용한 웨이퍼 표면의 MCLT 및 상기 웨이퍼를 이용하여 플라즈마 화학기상증착법(PECVD)을 통하여 제작한 태양전지 소자 효율은 KOH etching 시간이 10분일 때 최대치에 도달한 후 감소하였다. 또한, RCA1, RCA2, Piranha로 이루어진 웨이퍼 클리닝 단계의 사이에, 또는 맨 마지막에 묽힌 불산용액(DHF, 5 %) 처리를 하여 표면 산화막 제거 및 수소종단처리를 하여 기판의 passivation 특성을 향상시키고자 할 때, 불산용액 처리 순서에 따른 웨이퍼 표면의 MCLT 및 태양전지 소자 효율을 비교하였다. 그 결과, 묽은불산용액을 클리닝 단계 사이에 적용하였을 때의 MCLT 및 태양전지 소자의 특성이 더 우수하였다.