• Title/Summary/Keyword: Plamsa

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A Study on the Remote Detection of a Hydraulic Cylinder Stroke Using Optical Fiber Sensors (광파이버센서를 이용한 유압실린더 스트로크의 원격 검출에 관한 연구)

  • 김인환;김종화
    • Journal of Advanced Marine Engineering and Technology
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    • v.25 no.1
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    • pp.191-198
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    • 2001
  • In order to comprise a basic closed-loop control system for hydraulic systems it is necessary to detect the piston rod stroke of a hydraulic cylinder. There are many conventional type sensors which can detect the displacement of cylinders. However, they cannot reveal the original performance normally or they cannot be applied at all where the operating circumstance of cylinders is beyond specifications of sensors. Especially, for the purpose of detecting the strokes of cylinders mounted on heavy equipments, a special exclusive sensor must be used because the operating circumstances of heavy equipments are so severe that general purpose sensors cannot endure such circumstance as shock and a residual vibration induced by rough works. In this paper, an exclusive method for detecting the piston rod stroke for heavy equipments is suggested, which adopts a remote detecting technique using optical fiber sensors. Several experiments using the prototype are executed for verifying the effectiveness of the suggested method and the possibility of the accurate detection of stroke.

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Calculation of ion distribution in an RF plasma etching system using monte carlo methods (몬테카를로 계산 방식에 의한 RF 플라즈마 에칭 시스템에서의 이온 분포 계산)

  • 반용찬;이제희;윤상호;권오섭;김윤태;원태영
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.35D no.5
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    • pp.54-62
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    • 1998
  • In a plasma etching system, ions become an important parameter in determining the wafer topography which depends on both the physical sputtering mechanism and the chemically enhanced reaction. this paper reports the energy and angular distributions of ions across the plasma sheath using a monte carlo method. The ion distribution is mainly affected by the magnitude of the sheath voltage and by the collision in the sheath. Furthemore, the local potential distribution in a plamsa sheath has been determined by solving the poisson's equation. In th is work, ionic collisions were cosidered in terms of both charge exchange and momentum transfer. The three-dimensional distributions of ions were calculated with varying the input process conditions in the plasma reactor.

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X-ray and Plasma Process Induced Damages to PLZT Capacitor Characteristics for DRAM Applications

  • Kim, Jiyoung
    • The Korean Journal of Ceramics
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    • v.3 no.3
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    • pp.213-217
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    • 1997
  • In this paper, the imparct of X-ray and plasma process-induced-damages to La doped Lead Zirconate Titanate (PLZT, (Pb1-xLa)(Zr0.5Ti0.5)O3) capacitor characteristics have been investigated from the viewpoint of gigabit scale dynamic random access memory (DRAM) applications. Plamsa damage causes asymmetric degradation on hysteresis characteristics of PLZT films. On the other hand, X-ray damage results in a symmetrical reduction of charge storage densities (Qc's) for both polarities. As La concentration increases in the films, the radiation hardness of PLZT films on X-ray and plasma exposures is improved. It is observed that the damaged devices are fully recovered by thermal annealing under oxygen ambient.

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Fabrication of soluble organic thin film transistor with ammonia ($NH_3$) plasma treatment

  • Kim, Dong-Woo;Kim, Doo-Hyun;Kim, Keon-Soo;Kim, Hyoung-Jin;Choi, Hong;Lee, Dong-Hyeok;Hong, Mun-Pyo
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.566-567
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    • 2009
  • We have examined the silicon nitride ($SiN_x$) as gate insulator with the ammonia ($NH_3$) plamsa treatment for the soluble derivatives of polythiophene as p-type channel materials of organic thin film transistors (OTFTs). Fabrications of the jetting-processed OTFTs with $SiN_x$ as gate insulator by $NH_3$ plasma treatment can be similar to performance of OTFTs with silicon dioxide ($SiO_2$) insulator.

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Surface Treatment of Steel by Plasma Boronizing

  • Lee, G.H.;Na, K.S.m;Kwon, S.C.;Kim, S.K.
    • Journal of the Korean Vacuum Society
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    • v.4 no.S2
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    • pp.49-57
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    • 1995
  • At present the processes of boronizing have been mostly studied in a plasma from gaseous compounds containing the impregnating element and are in an industrial use. These have been investigated by a variety of works in a glow discharge with different mixture ratios of $B_2H_6$ and $H_2$ as well as $BCl_3$ and $H_2$. The active atomosphere has been diluted by Ar or some other inert gas in order to enhance control of boron potential and to reduce the ignition voltage of the glow discharge. The Control of gaseous atomosphere is essential to a boride layer in plamsa boronizing treatment. The boride formation is required to make the workpiece surface saturated with boron content. The present study considers the efficiency of plasma boronizing reactions and the morphology of boride layer under various plasma conditions

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The effect of plamsa treatment on superconformal copper gap-fill

  • Mun, Hak-Gi;Kim, Seon-Il;Park, Yeong-Rok;Lee, Nae-Eung
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.249-249
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    • 2010
  • The effect of forming a passivation layer was investigated in superconformal Cu gap-filling of the nano-scale trench with atomic-layer deposited (ALD)-Ru glue layer. It was discovered that the nucleation and growth of Cu during metal-organic chemical vapor deposition (MOCVD) were affected by hydrogen plasma treatments. Specifically, as the plasma pretreatment time increased, Cu nucleation was suppressed proportionally. XPS and Thermal Desorption Spectroscopy indicated that hydrogen atoms passivate the Ru surface, which leads to suppression of Cu nucleation owing to prevention of adsorption of Cu precursor molecules. For gap-fill property, sub 60-nm ALD Ru trenches without the plasma pretreatment was blocked by overgrown Cu after the Cu deposition. With the plasma pretreatment, superconformal gap filling of the nano-scale trenches was achieved due to the suppression of Cu nucleation near the entrances of the trenches. Even the plasma pretreatment with bottom bias leads to the superconformal gap-filling.

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A Case of Relapsing Polychondritis involving Trachea and Bronchi (기관 및 기관지를 침범한 재발성다발연골염 1례)

  • 임상철;장일권;임성철;박경옥
    • Korean Journal of Bronchoesophagology
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    • v.4 no.1
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    • pp.117-121
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    • 1998
  • Relapsing polychondritis is a rare disesase involving any cartilaginous structure of entire body and is characterized by recurrent episode of inflammation and degeneration of cartilage and most commonly involve ear, nose, larynx, trachea, ribs, Eustachian tube, etc. Its signs and symptoms are recurrent swelling of auricle, saddle nose deformity, polyarthralgia, hoarseness and dyspnea, audiovestibular disturbance and cardiovascular abnormality, etc. Characteristic histologic findings are loss of normal basophilic staining of cartilage, perichondrial inflammatory infiltration with plamsa cells, lymphocytes and neutrophils, and finality, destruction of cartilage and replacement with scar tissue. Our case had saddle nose deformity, arthralgia, tracheal collapse, hearig loss and positive histologic finding but no auricular perichnodritis. Her major problem was airway. obstruction due to tracheal collapse. This case was diagnosed with relapsing polychondritis according to the Damiani's criteria. This case indicates that any patients complaining of airway obstruction have to be examined systemically.

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Modeling of plamsa etch process using a radial basis function network (레이디얼 베이시스 함수망을 이용한 플라즈마 식각공정 모델링)

  • Park, Kyoung-Young;Kim, Byung-Whan;Lee, Byung-Teak
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07b
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    • pp.1129-1133
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    • 2004
  • 반도체공정 최적화에 소요되는 시간과 경비를 줄이기 위해 신경망 모델이 개발되고 있다. 주로 역전파 신경망을 이용하여 모델이 개발되고 있으며, 본 연구에서는 Radial Basis Function Network (RBFN)을 이용하여 플라즈마 식각공정 모델을 개발한다. 실험데이터는 유도결합형 플라즈마를 이용한 Silicon Carbide 박막의 식각공정으로부터 수집되었다. 모델개발을 위해 $2^4$ 전인자 (full factorial) 실험계획법이 적용되었으며, 모델에 이용된 식각응답은 식각률과 atomic force microscopy로 측정한 식각표면 거칠기이다. 모델검증을 위해 추가적으로 16번의 실험을 수행하였다. RBFN의 예측성능은 세 학습인자, 즉 뉴런수, width, 초기 웨이트 분포 (initial weight distribution-IWD) 크기에 의해 결정된다. 본 연구에서는 각 학습인자의 영향을 최적화하였으며, IWD의 불규칙성을 고려하여 주어진 학습인자에 대해서 100개의 모델을 발생하고, 이중 최소의 IWD를 갖는 모델을 선택하였다. 최적화한 식각률과 표면거칠기 모델의 RMSE는 각기 26 nm/min과 0.103 nm이었다. 통계적인 회귀모델과 비교하여, 식각률과 표면거칠기 모델은 각기 52%와 24%의 향상된 예측정확도를 보였다. 이로써 RBFN이 플라즈마 공정을 효과적으로 모델링 할 수 있음을 확인하였다.

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Plasma Jet을 이용한 고속 박막 증착 기법의 연구

  • Lee, Yun-Seong;Bae, In-Sik;Seol, Yu-Bin
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.08a
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    • pp.326-326
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    • 2011
  • 최근 다양한 종류의 태양전지의 연구가 수행되고 있으며 그 중 박막형 태양전지 및 웨이퍼 실리콘 기반의 태양전지의 경우 태양전지의 효율 및 생산단가를 충족시키는 것에 연구의 목적이 집중되어 있다. 이러한 사항을 만족시키기 위하여 대면적 PECVD기반의 플라즈마 소스를 적용하려는 연구가 진행되고 있으며 결정질의 실리콘 박막 증착에 있어서 다중접합 태양전지 기준으로 효율 10% 내외를 유지하면서 결정질 기준 증착속도 0.5 nm/sec의 성과를 보이고 있다. 하지만 단위 가격 당 전력 생산 단가의 경쟁력을 확보하기 위하여 증착속도의 고속화에 대한 연구가 더욱 진행되어야 한다. 본 연구에서는 새로운 플라즈마 방전 개념으로서 Gas의 분사되는 Jet을 plasma에 통과시켜 증착속도의 향상을 도모하는 plasma 소스를 제시하였다. 새로운 방전 개념을 이용하여 다양한 공정조건인 압력(3~8 torr), Gas ratio([SiH4]/[H2]), RF power에서의 Plasma의 특성을 확인 하였으며 해당 조건에서의 박막 특성을 확인하여 비정질 기준 3 nm/sec, 결정질 기준 결정화도 약 70%의 조건에서 증착속도 2 nm/sec의 결과를 확인하였다. 또한 해당 조건에서의 효율 및 FF, $V_{oc}$, $I_{sc}$를 확인하여 태양전지로서의 적용가능성을 확인하였다. 마지막으로 해당소스의 대면적 적용가능성을 확인하기 위하여 대면적 plasma 개념의 모델중 하나인 In-line 개념의 plasma source로서의 적용 가능성을 제시하였다.

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Real-time malfunction detection of plasma etching process using EPD signal traces (EPD 신호궤적을 이용한 플라즈마 식각공정의 실시간 이상검출)

  • Cha, Sang-Yeob;Yi, Seok-Ju;Koh, Taek-Beom;Woo, Kwang-Bang
    • Journal of Institute of Control, Robotics and Systems
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    • v.4 no.2
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    • pp.246-255
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    • 1998
  • This paper presents a novel method for real-time malfunction detection of plasma etching process using EPD signal traces. First, many reference EPD signal traces are collected using monochromator and data acquisition system in normal etching processes. Critical points are defined by applying differentiation and zero-crossing method to the collected reference signal traces. Critical parameters such as intensity, slope, time, peak, overshoot, etc., determined by critical points, and frame attributes transformed signal-to symbol of reference signal traces are saved. Also, UCL(Upper Control Limit) and LCL(Lower Control Limit) are obtained by mean and standard deviation of critical parameters. Then, test EPD signal traces are collected in the actual processes, and frame attributes and critical parameters are obtained using the above mentioned method. Process malfunctions are detected in real-time by applying SPC(Statistical Process Control) method to critical parameters. the Real-time malfunction detection method presented in this paper was applied to actual processes and the results indicated that it was proved to be able to supplement disadvantages of existing quality control check inspecting or testing random-selected devices and detect process malfunctions correctly in real-time.

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