• Title/Summary/Keyword: Plasma Etching

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On the Etching Mechanism of Parylene-C in Inductively Coupled O2 Plasma

  • Shutov, D.A.;Kim, Sung-Ihl;Kwon, Kwang-Ho
    • Transactions on Electrical and Electronic Materials
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    • v.9 no.4
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    • pp.156-162
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    • 2008
  • We report results on a study of inductively coupled plasma (ICP) etching of Parylene-C (poly-monochloro-para-xylylene) films using an $O_2$ gas. Effects of process parameters on etch rates were investigated and are discussed in this article from the standpoint of plasma parameter measurements, performed using a Langmuir probe and modeling calculation. Process parameters of interest include ICP source power and pressure. It was shown that major etching agent of polymer films was oxygen atoms O($^3P$). At the same time it was proposed that positive ions were not effective etchant, but ions played an important role as effective channel of energy transfer from plasma towards the polymer.

A study on Silicon dry Etching for Solar Cell Fabrication Using Hollow Cathode Plasma System (태양전지 제작을 위한 Hollow Cathode Plasma System의 실리콘 건식식각에 관한 연구)

  • ;Suresh Kumar Dhungel
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.53 no.2
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    • pp.62-66
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    • 2004
  • This paper investigated the characteristics of a newly developed high density hollow cathode plasma (HCP) system and its application for the etching of silicon wafers. We used SF$_{6}$ and $O_2$ gases in the HCP dry etch process. Silicon etch rate of $0.5\mu\textrm{m}$/min was achieved with $SF_6$$O_2$plasma conditions having a total gas pressure of 50mTorr, and RF power of 100 W. This paper presents surface etching characteristics on a crystalline silicon wafer and large area cast type multicrystlline silicon wafer. The results of this experiment can be used for various display systems such as thin film growth and etching for TFT-LCDs, emitter tip formations for FEDs, and bright plasma discharge for PDP applications.s.

Comparison of E-ICP Effect for Large Area Plasma Source (대면적 플라즈마 소스에의 E-ICP 적용과 그 효과 비교)

  • 김진우;손민영;박세근;오범환
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.07a
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    • pp.608-611
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    • 2000
  • Large area plasma source becomes important as the substrate size increases. In this work, four inductively coupled plasma(ICP) unit sources are distributed 2${\times}$2 array. E-ICP concept is applied to the 2${\times}$2 array ICP and its effect is examined. Characteristics of the plasma are measured, and photoresist etching is performed with oxygen plasma. Good etching characteristic in terms of etching rate and uniformity can be obtained with E-ICP.

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Enhanced Adhesion of Tire Cords via Argon Etching and Acetylene Plasma Polymerization (아르곤 에칭과 아세틸렌 플라즈마 중합에 의한 타이어 코드의 접착성 향상연구)

  • H. M. Kang;Kim, R. K.;T. H. Yoon
    • Proceedings of the Korean Society For Composite Materials Conference
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    • 1999.11a
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    • pp.36-39
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    • 1999
  • Steel tire cords were coated via RF Plasma Polymerization of acetylene in order to enhance adhesion to rubber compounds. Adhesion of tire cords was measured by TACT as a function of plasma polymerization and argon etching conditions such as power, treatment time and chamber pressure. Tested tire cords were analysed by SEM to elucidate the adhesion mechanism. The highest adhesion values were obtained with argon etching condition at 90W, 10min, 30mtorr followed by acetylene plasma polymerization condition at 10W, 30sec., 30mtorr. In SEM analysis, the plasma polymerized tire cord at the optimized condition showed 100% rubber coverage as observed from brass-plated steel tire cords.

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Study on the Etching Characteristics of $0.2\mu\textrm{m}$ fine Pattern of Ta Thin film for Next Generation Lithography Mask (차세대 노광공정용 Ta박막의 $0.2\mu\textrm{m}$ 미세패턴 식각특성 연구)

  • Woo, Sang-Gyun;Kim, Sang-Hoon;Ju, Sup-Youl;Ahn, Jin-Ho
    • Korean Journal of Materials Research
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    • v.10 no.12
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    • pp.819-824
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    • 2000
  • In this research, the etching characteristics of Ta thin film with chlorine plsama have been studied by Electron Cyclotron Resonance (ECR) plasma etching system. The effects of microwave power, RF bias power, working pressure and gas chemistry on the etching profiles have been investigated. The microloading effect, which was observed at fine pattern formation, was effectively suppressed by double step etching, and anisotropic $0.2{\mu\textrm{m}}$ L&S patterns were successfully generated.

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Study of Dry Etching of SnO thin films using a Inductively Coupled Plasma (Inductively Coupled Plasma를 이용한 SnO 박막의 식각 특성 연구)

  • Kim, Su-Kon;Park, Byung-Ok;Lee, Joon-Hyung;Kim, Jeong-Joo;Heo, Young-Woo
    • Journal of the Korean institute of surface engineering
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    • v.49 no.1
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    • pp.98-103
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    • 2016
  • The dry etching characteristics of SnO thin films were investigated using inductively coupled plasma (ICP) in Ar, $CF_4$, $Cl_2$ chemistries. the SnO thin films were deposited by reactive rf magnetron sputtering with Sn metal target. In order to study the etching rates of SnO, the processing factors of processing pressure, source power, bias power, and etching gas were controlled. The etching behavior of SnO films under various conditions was obtained and discussed by comparing to that of $SiO_2$ films. In our results, the etch rate of SnO film was obtained as 94nm/min. The etch rates were mainly affected by physical etching and the contribution of chemical etching to SnO films appeared relatively week.

Improvement of Plating Characteristics Between Nickel and PEEK by Plasma Treatment and Chemical Etching

  • Lee, Hye W.;Lee, Jong K.;Park, Ki Y.
    • Corrosion Science and Technology
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    • v.8 no.1
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    • pp.15-20
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    • 2009
  • Surface of PEEK(poly-ether-ether-ketone) was modified by chemical etching, plasma treatment and mechanical grinding to improve the plating adhesion. The plating characteristics of these samples were studied by the contact angle, plating thickness, gloss and adhesion. Chemical etching and plasma treatment increased wettability, adhesion and gloss. The contact angle of as-received PEEK was $61^{\circ}$. The contact angles of chemical etched, plasma treated or both were improved to the range of $15{\sim}33^{\circ}$. In the case of electroless plating, the thickest layer without blister was $1.6{\mu}m$. The adhesion strengths by chemical etching, plasma treatment or both chemical etching and plasma treatment were $75kgf/cm^2$, $102kgf/cm^2$, $113kgf/cm^2$, respectively, comparing to the $24kgf/cm^2$ of as-received. In the case of mechanically ground PEEKs, the adhesion strengths were higher than those unground, with the sacrifice of surface gloss. The gloss of untreated PEEK were greater than mechanically ground PEEKs. Plating thickness increased linearly with the plating times.

Plasma Etching Process based on Real-time Monitoring of Radical Density and Substrate Temperature

  • Takeda, K.;Fukunaga, Y.;Tsutsumi, T.;Ishikawa, K.;Kondo, H.;Sekine, M.;Hori, M.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.93-93
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    • 2016
  • Large scale integrated circuits (LSIs) has been improved by the shrinkage of the circuit dimensions. The smaller chip sizes and increase in circuit density require the miniaturization of the line-width and space between metal interconnections. Therefore, an extreme precise control of the critical dimension and pattern profile is necessary to fabricate next generation nano-electronics devices. The pattern profile control of plasma etching with an accuracy of sub-nanometer must be achieved. To realize the etching process which achieves the problem, understanding of the etching mechanism and precise control of the process based on the real-time monitoring of internal plasma parameters such as etching species density, surface temperature of substrate, etc. are very important. For instance, it is known that the etched profiles of organic low dielectric (low-k) films are sensitive to the substrate temperature and density ratio of H and N atoms in the H2/N2 plasma [1]. In this study, we introduced a feedback control of actual substrate temperature and radical density ratio monitored in real time. And then the dependence of etch rates and profiles of organic films have been evaluated based on the substrate temperatures. In this study, organic low-k films were etched by a dual frequency capacitively coupled plasma employing the mixture of H2/N2 gases. A 100-MHz power was supplied to an upper electrode for plasma generation. The Si substrate was electrostatically chucked to a lower electrode biased by supplying a 2-MHz power. To investigate the effects of H and N radical on the etching profile of organic low-k films, absolute H and N atom densities were measured by vacuum ultraviolet absorption spectroscopy [2]. Moreover, using the optical fiber-type low-coherence interferometer [3], substrate temperature has been measured in real time during etching process. From the measurement results, the temperature raised rapidly just after plasma ignition and was gradually saturated. The temporal change of substrate temperature is a crucial issue to control of surface reactions of reactive species. Therefore, by the intervals of on-off of the plasma discharge, the substrate temperature was maintained within ${\pm}1.5^{\circ}C$ from the set value. As a result, the temperatures were kept within $3^{\circ}C$ during the etching process. Then, we etched organic films with line-and-space pattern using this system. The cross-sections of the organic films etched for 50 s with the substrate temperatures at $20^{\circ}C$ and $100^{\circ}C$ were observed by SEM. From the results, they were different in the sidewall profile. It suggests that the reactions on the sidewalls changed according to the substrate temperature. The precise substrate temperature control method with real-time temperature monitoring and intermittent plasma generation was suggested to contribute on realization of fine pattern etching.

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Controllable Etching of 2-Dimentional Hexagonal Boron Nitride by Using Oxygen Capacitively Coupled Plasma

  • Qu, Deshun;Yoo, Won Jong
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2013.05a
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    • pp.170-170
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    • 2013
  • We present a novel etching technique for 2-dimentional (2-D) hexagonal boron nitride (h-BN) by using capacitively coupled plasma (CCP) of oxygen combined with a post-treatment by de-ionized (DI) water. Oxygen CCP etching process for h-BN has been systematically studied. It is found that a passivation layer was generated to obstruct further etching while it can be easily and radically removed by DI water. An essential cleaning effect also has been observed in the etching process, organic residues are successfully removed and the surface roughness has much decreased. Considering h-BN is the most important 2-D dielectric material and its potential application for graphene to silicon-based electronic devices, such an etching method can be widely used to control the 2-D h-BN thickness and improve the surface quality.

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A study on platinum dry etching using a cryogenic magnetized inductively coupled plasma (극저온 자화 유도 결합 플라즈마를 이용한 Platinum 식각에 관한 연구)

  • 김진성;김정훈;김윤택;황기웅;주정훈;김진웅
    • Journal of the Korean Vacuum Society
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    • v.8 no.4A
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    • pp.476-481
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    • 1999
  • Characteristics of platinum dry etching were investigated in a cryogenic magnetized inductively coupled plasma (MICP). The problem with platinum etching is the redeposition of sputtered platinum on the sidewall. Because of the redeposits on the sidewall, the etching of patterned platinum structure produces feature sizes that exceed the original dimension of the PR size and the etch profile has needle-like shape [1]. The main object of this study was to investigate a new process technology for fence-free Pt etching As bias voltage increased, the height of fence was reduced. In cryogenic etching, the height of fence was reduced to 20% at-$190^{\circ}C$ compared with that of room temperature, however the etch profile was not still fence-free. In Ar/$SF_6$ Plasma, fence-free Pt etching was possible. As the ratio of $SF_6$ gas flow is more than 14% of total gas flow, the etch profile had no fence. Chemical reaction seemed to take place in the etch process.

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