• Title/Summary/Keyword: Polymer Buffer Layer

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LiNbO3 integrated optic devices with an UV-curable polymer buffer layer

  • Jeong, Woon-Jo;Kim, Seong-Ku;Park, Gye-Choon;Lee, Jin
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.05b
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    • pp.111-118
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    • 2002
  • A new lithium niobate optical modulator with a polymer buffer layer on Ni in-diffused optical waveguide is proposed for the fist time, successfully fabricated and examined at a wavelength of 1.3 mm. By determining the diffusion parameters of Ni in-diffused waveguide to achieve more desirable mode size which is well matched to the mode in the fiber, the detailed results on the achievement of high optical throughput are reported. In addition, the usefulness of polymer buffer layer which can be applicable to a buffer layer in Ni in-diffused waveguide devices is demonstrated. Several sets of channel waveguides fabricated on Z-cut lithium niobate by Ni in-diffusion were obtained and on which coplanar traveling-wave type electrodes with a polymer-employed buffer layer were developed by a conventional fabrication method for characterizing of electro-optical performances of the proposed device. The experimental results show that the measured half-wave voltage is of ~10 V and the total measured fiber-to-fiber insertion loss is of ~6.4 dB for a 40 mm long at a wavelength of =1.3 mm, respectively. From the experimental results, it is confirmed that the polymer-employed buffer layer in LiNbO3 optical modulator can be a substitute material instead of silicon oxide layer which is usually processed at a high temperature of over $300^{\circ}C$. Moreover, the fabrication tolerances by using polymer materials in LiNbO3 optical modulators are much less strict in comparison to the case of dielectric buffer layer.

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ZnO-free Inverted Polymer Solar Cells Based on New Viologen Derivative as a Cathode Buffer Layer (ZnO를 대체 가능한 새로운 Viologen 유도체가 적용된 역구조 고분자 태양전지)

  • Kim, Youn Hwan;Kim, Dong Geun;Kim, Joo Hyun
    • Applied Chemistry for Engineering
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    • v.27 no.5
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    • pp.512-515
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    • 2016
  • A new viologen derivative namely 1,1'-bis(3,4-dihydroxybutyl)-[4,4'-bipyridine]-1,1'-diium bromide (V-Pr-2OH) was synthesized and applied as a cathode buffer layer to inverted polymer solar cells (PSCs) based on the blend of PTB7 : $PC_{71}BM$. PSCs with the structure of ITO/V-Pr-2OH/PTB7 : $PC_{71}BM/MoO_3/Ag$ as the cathode buffer layer showed the power conversion efficiency (PCE) up to 7.28%, which is comparable to that of the PSCs with the structure of ITO/ZnO/PTB7 : $PC_{71}BM/MoO_3/Ag$ (7.44%) in the absence of V-Pr-2OH. This study demonstrates that a highly efficient PSCs without any high temperature heat treatment can be obtained.

Improvement of Mchanical Property of Indium-tin-oxide Films on Polymer Substrates by using Organic Buffer Layer

  • Park, Sung-Kyu;Han, Jeong-In;Moon, Dae-Gyu;Kim, Won-Keun
    • Transactions on Electrical and Electronic Materials
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    • v.3 no.2
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    • pp.32-37
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    • 2002
  • This paper gives the basic mechanical properties of indium-tin-oxide (ITO) films on polymer substrates which are exposed to externally and thermally induced bending force. By using modified Storney formula including triple layer structure and bulge test measuring the conductive changes of patterned ITO islands as a function of bending curvature, the mechanical stability of ITO films on polymer substrates was intensively investigated. The numerical analyses and experimental results show thermally and externally induced mechanical stresses in the films are responsible for the difference of thermal expansion between the ITO film and the substrate, and leer substrate material and its thickness, respectively. Therefore, a gradually ramped heating process and an organic buffer layer were employed to improve the mechanical stability, and then, the effects of the buffer layer were also quantified in terms of conductivity-strain variations. As a result, it is uncovered that a buffer layer is also a critical factor determining the magnitude of mechanical stress and the layer with the Young's modulus lower than a specific value can contribute to relieving the mechanical stress of the films.

Effects of Buffer layer in Organic Light-Emitting Diodes (유기 전기발광 소자에서 버퍼층이 미치는 영향)

  • 김상걸;정동회;이호식;정택균;김태완;민항기;박종욱;송미종;이준웅
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.07a
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    • pp.174-177
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    • 2001
  • We have seen the effects of buffer layer in organic light-emitting diodes using poly(N-vinylcarbazole)(PVK). Polymer PVK buffer layer was made using spin casting techniques. Two different types of spin casting have been applied; static coating and dynamic coating. Two device structures were fabricated; one is ITO/TPD/Alq$_3$/Al as a reference, and the other is ITO/PVK/TPD/Alq$_3$/Al to see the effects of buffer layer in organic light-emitting diodes. Current-voltage characteristics and luminous efficiency were measured with a variation of spin-casting methods and rpm speeds. We have obtained an improvement of luminous efficiency by a factor of two and half when the PVK buffer layer is used.

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The Effect of Polymer Thin Film for Sealing Buffer on the Characteristics of OLEO Device (OLED 소자의 특성에 미치는 밀봉 버퍼용 고분자박막의 영향)

  • Lee, Bong-Sub;Ju, Sung-Hoo;Yang, Jae-Woong
    • Journal of the Korean institute of surface engineering
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    • v.41 no.3
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    • pp.102-108
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    • 2008
  • In this paper, the LiF and polymer thin film as passivation layer have been evaporated on green OLED devices. HDPE, polyacenaphthylene, polytetrafluoroethylene, poly(2,6-dimethyl-1,4-pheneylene oxide), poly sulfone and poly(dimer-acid-co-alkyl poly-amine) have been used as polymer materials. The optical transmittance of evaporated polymer thin film was very good as an above 90% in visible range. The morphology of polymer thin film was measured by AFM. As a result of the measurement average roughness($R_a$) value of the polysulfone was very low as 2.2 nm. The green OLED devices with a structure of ITO/HIL/HTL/EML/Buffer/Al in series of various passivation films were fabricated and analyzed. It was observed that an OLED device with LiF as first passivation film has shown the good electrical and optical property, and all kind of polymer films did not influence on the I-V-L characteristics and the life time of OLED devices. Therefore, we found that polymer layer played a key role as a buffer layer between the inorganic passivation layers to relieve the stress of the inorganic layers.

Efficient Organic Light-Emitting Diodes with a use of Hole-injection Buffer Layer

  • Kim, Sang-Keol;Chung, Dong-Hoe;Chung, Taek-Gyun;Kim, Tae-Wan
    • 한국정보디스플레이학회:학술대회논문집
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    • 2002.08a
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    • pp.766-769
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    • 2002
  • We have seen the effects of hole-injection buffer layer in organic light-emitting diodes using copper phthalocyanine(CuPc), poly(vinylcarbazole)(PVK), and Poly(3,4-ethylenedioxythiophene):poly(styrene-sulfonate)(PEDOT:PSS) in a device structure of ITO/buffer/TPD/$Alq_3$/Al. Polymer PVK and PEDOT:PSS buffer layer was made using spin casting method and the CuPc layer was made using thermal evaporation. Current-voltage characteristics, luminance-voltage characteristics and efficiency of device were measured at room temperature with a thickness variation of buffer layer. We have obtained an improvement of the external quantum efficiency by a factor of two, four, and two and half when the CuPc, PVK, and PEDOT:PSS buffer layer are used, respectively. The enhancement of the efficiency is attributed to the improved balance of holes and elelctrons due to the use of hole-injection buffer layer. The CuPc and PEDOT:PSS layer functions as a hole-injection supporter and the PVK layer as a hole-blocking one.

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Electrical and Mechanical Properties of Indium-tin-oxide Films Deposited on Polymer Substrate Using Organic Buffer Layer

  • Han, Jeong-In;Lee, Chan-Jae;Rark, Sung-Kyu;Kim, Won-Keun;Kwak, Min-GI
    • Journal of Information Display
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    • v.2 no.2
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    • pp.52-60
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    • 2001
  • The electrical and mechanical properties in indium-tin-oxide films deposited on polymer substrate were examined. The materials of substrates were polyethersulfone (PES) which have gas barrier layer and anti-glare coating for plastic-based devices. The experiments were performed by rf-magnetron sputtering using a special instrument and buffer layers. Therefore, we obtained a very flat polymer substrate deposited ITO film and investigated the effects of buffer layers, and the instrument. Moreover, the influences of an oxygen partial pressure and post-deposition annealing in ITO films deposited on polymer substrates were clarified. X-ray diffraction observation, measurement of electrical property, and optical microscope observation were performed for the investigation of micro-structure and electro-mechanical properties, and they indicated that as-deposited ITO thin films are amorphous and become quasi-crystalline after adjusting oxygen partial pressure and thermal annealing above $180^{\circ}C$. As a result, we obtained 20-25 ${\Omega}/sq$ of ITO films with good transmittance (above 80 %) of oxygen contents with under 0.2 % and vacuum annealing. Furthermore, using organic buffer layer, we obtained ITO films which have a rather high electrical resistance (40-45 ${\Omega}/sq$) but have improved optical (more than 85 %) and mechanical characteristics compared to the counterparts. Consequently, a prototype reflective color plastic film LCD was fabricated using the PES polymer substrates to confirm whether the ITO films could be realized in accordance with our experimental results.

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Efficiency Enhancement in Organic Polymer Solar Cells with Ferroelectric Films (강유전 고분자 박막을 이용한 유기고분자 태양전지에서의 효율 증대)

  • Park, Jayoung;Jung, Chi Sup
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.30 no.2
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    • pp.126-132
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    • 2017
  • The power conversion efficiency of organic polymer solar cells was enhanced by introducing a ferroelectric polymer layer at the interface between active layer and metal electrode. The power conversion efficiency was increased by 50% through the enhancement of the open circuit voltage. To investigate the role of the ferroelectric layer on the dissociation process of the excitons, non-radiative portion of the exciton decay was directly measured by using photoacoustic technique. The results show that the ferroelectric nature of the buffer layer does not play any roles on the dissociation process of the excitons, which indicates the efficiency enhancement is not due to the ferroelectricity of the buffer layer.

The Effect of Encapsulation Layer Incorporated into Polymer Substrates for Bending Stress (고분자 기판의 휨 스트레스에 대한 Encapsulation층의 효과)

  • 박준백;서대식;이상극;이준웅;김영훈;문대규;한정인
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.4
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    • pp.443-447
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    • 2004
  • In this study, we investigated the necessity of encapsulation layer to maximize flexibility of brittle indium-tin-oxide (ITO) on polymer substrates. And, Young's modulus (E) of encapsulation layer han a significant effect on external bending stress and the coefficient of thermal expansion (CTE) of that han a significant effect on internal thermal stress. To compare the magnitude of total mechanical stress including both bending stress and thermal stress, the mechanical stress of triple-layer structure (substrate / ITO / encapsulation layer or substrate / buffer layer / ITO) can be quantified and numerically analyzed through the farthest cracked island position. As a result, it should be noted that multi-layer structures with more elastic encapsulation material have small mechanical stress compared to that of buffer and encapsulation structure of large Young's modulus material when they were externally bent.

Effect of ZnS Buffer Layer on Inorganic EL Device

  • Kim, Duck-Gon;Park, Lee-Soon;Kum, Tae-Il;Lee, Sang-Mok;Sohn, Sang-Ho;Jung, Sang-Kooun
    • 한국정보디스플레이학회:학술대회논문집
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    • 2007.08b
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    • pp.1629-1631
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    • 2007
  • Significant process in the performance and commercialization of full-color thin-film electroluminescent(EL) displays has been achieved. This is due to the remarkable progress made in the performance of exiting EL phosphors, development of new phosphor materials, and design of new EL phosphor structures. In this paper, we fabricated thinfilm EL devices with ZnS buffer and $BaTiO_3$ electric layer with on top and bottom of phosphor layer. The effect of ZnS and $BaTiO_3$ layer on the luminance of EL device were studied.

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