• Title/Summary/Keyword: Positron lifetime

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Positron Annihilation Lifetime Study on the Proton-Irradiation BaSrFBr : Eu Film (양전자 소멸 수명 측정에 의한 양성자 조사된 BaSrFBr : Eu 박막 특성)

  • Im, Yu-Suk;Lee, Chong-Yong
    • Korean Journal of Materials Research
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    • v.20 no.6
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    • pp.307-311
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    • 2010
  • Positron annihilation lifetime spectroscopy is applied to BaSrFBr : Eu film which is used for the phosphore layer, and afterwards the reliability and self-consistency of source corrections in the positron lifetime spectroscopy is investigated using a $^{22}Na$ positron emitter covered by thin foils. The positron lifetime showed no significant change through the various proton irradiation energies. It is unusual that the measurements of the defects indicate that most of the defects were likely to have been generated by X-ray radiation. This may have resulted from the Bragg peaks of the proton characteristics. The Bragg peak does not affect the defect signals enough to distinguish the lifetimes and intensities in a material that is includes multi-grains. The lifetime ($\tau_1$) associated with positron annihilations in the Ba, Br, and Eu of the sample was about 250 ps, and due to the annihilations at F-centers or defects from the irradiated protons in sample, the lifetime ($\tau_2$) was about 500 ps.

Positron Annihilation Study of Vacancy Type Defects in Ti, Si, and BaSrFBr:Eu

  • Lee, Chong Yong
    • Applied Science and Convergence Technology
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    • v.25 no.5
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    • pp.85-87
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    • 2016
  • Coincidence Doppler broadening and positron lifetime methods in positron annihilation spectroscopy has been used to analyze defect structures in metal, semiconductor and polycrystal, respectively. The S parameter and the lifetime (${\tau}$) value show that the defects were strongly related with vacancies. A positive relationship existed between the scanning electron microscope (SEM) images and the positron annihilation spectroscopy (PAS). According to the SEM images and PAS results, measurements of the defects with PAS indicate that it was more affected by the defect than the purity.

Study on the Free Volume in Polymer by Positron Annihilation Lifetime Spectroscopy (PALS) (양전자소멸 수명시간 측정을 통한 폴리머소재의 자유부피에 관한 연구)

  • Kim, Yongmin;Shin, Jungki;Kwon, Junhyun
    • Journal of the Korean Society of Radiology
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    • v.6 no.6
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    • pp.489-493
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    • 2012
  • Positron Annihilation Lifetime Spectroscopy is a non-destructive technique to study voids and defects in solids by the measurement of gammas from electron-positron annihilation. In this study, we measured the lifetime of CR, EPDM, NBR, all of which are widely used polymer in various fields. A conventional fast-fast coincidence system in KAERI(Korea Atomic Energy Research Institute) has been used to measure the lifetime spectra, Three lifetime components were analyzed from each lifetime spectra. According to Tao-Eldrup model equation, the size and fraction of free-volume were calculated. Mean radius and free volume fraction of CR, EPDM NBR are $0.1217nm^3$(1.9103%), $0.14780nm^3$(5.3147%), $0.1216nm^3$(2.6381%), respectively. Through these measurements, we identified the feasibility of the PAL system for polymer analysis.

Investigation of Proton Irradiated Effect on n, p type Silicon by Positron Annihilation Method (양전자 소멸 측정에 의한 n, p형 실리콘 구조 특성)

  • Lee, C.Y.
    • Journal of the Korean Vacuum Society
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    • v.21 no.5
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    • pp.225-232
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    • 2012
  • It is described that the proton beam induceds micro-size defects and electronic deep levels in n or p type single crystal silicon. Positron lifetime and Coincidence Doppler Broadening Positron Annihilation Spectroscopy were applied to study of characteristics of p type and n type silicon samples. In this investigation the numerical analysis of the Doppler spectra was employed to the determination of the shape parameter, S, defined as the ratio between the amount of counts in a central portion of the spectrum and the total counts of whole spectrum. The samples were exposed by 3.98 MeV proton beams ranging between 0 to ${\sim}10^{14}$ particles. The S-parameter values strongly depend on the irradiated proton beam, that indicated the defects generate more. Positron lifetime shows that positrons trapped in vacancies and lifetime ${\tau}_2$ increased according to proton irradiation.

Positron Annihilation Lifetime Spectroscopic Analysis to Demonstrate Flux-Enhancement Mechanism of Aromatic Polyamide Reverse Osmosis Membranes (양전자 소멸시간 분광분석을 통한 방향족 폴리아미드 역삼투 분리막의 수투과 향상 메커니즘 제시)

  • Kim, Sung-Ho;Kwak, Seung-Yeop
    • Proceedings of the Membrane Society of Korea Conference
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    • 2004.05b
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    • pp.82-85
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    • 2004
  • Flux-enhancement mechanism of thin-film-composite (TFC) membranes for the reverse comosis (RO) process was newly explained by positron annihilation lifetime spectroscopy (PALS) that has been found to be applied for detecting molecular vacancies or pores having sizes that are equivalent to salt or hydrate ions in RO membrane.(omitted)

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Free Volume in Polyers Note II。: Positron Annihilation lifetime Spectroscopy and Applications

  • G. Consolati;M. Pegoraro;L. Zanderighi
    • Korean Membrane Journal
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    • v.1 no.1
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    • pp.25-37
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    • 1999
  • positron annihilation Lifetime Spectroscopy has been extensively applied in recent years to investigate the free volume in polymers owing to the capability of the electron-positron bound system (positronium) to probe the typical size of sub-nanometric cavities among the macromolecular chains. In this paper we show recent results obtained through this technique in some amorphous polymeric mem-branes(olyurethanes. PUs and polytrimethilsylilpropine PTMSP) after a brief survey of the general features of the annihilation process as well as of the experimental apparatus. Lifetime of o-ps decay({{{{ tau _3}}}}) in PUs increases going from sub {{{{ TAU _g}}}} to over {{{{ TAU _g}}}} temperatures following a sigmoid curve. The coefficient of dilatation of the free volume fraction is shown to be the sum of two contributes due to the variation with T of the number of holes and of their mean volume. PAL spectrum of PTMSP freshly prepared shows four lifetime components: {{{{ tau _3}}}} and {{{{ tau _4}}}}: only are useful for free volume study. Two kinds of holes of different equivalent radius are reported ({{{{ gamma _s}}}} 4.60 nm and {{{{ gamma _1}}}} 0.754) The equivalent volume does not change in a range of 100 K. however the physical aging increases density and decreases oxygen permeability while {{{{ gamma _s}}}} goes down to 0.374 and r1 to 0.735 The number of holes obtained from the intensities{{{{ IOTA _3}}}} and {{{{ IOTA _4}}}} of PAL spectra decreases with aging 21.7% and 3.5% for large and small holes respectively.

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The Defect Characterization of Luminescence Thin Film by the Positron Annihilation Spectroscopy (양전자 소멸 측정을 이용한 발광 박막 구조 결함 특성)

  • Lee, Kwon Hee;Bae, Suk Hwan;Lee, Chong Yong
    • Journal of the Korean Vacuum Society
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    • v.22 no.5
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    • pp.250-256
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    • 2013
  • It is described that the proton beam induces micro-size defects and electronic deep levels in luminescence Thin Film. Coincidence Doppler Broadening Positron Annihilation Spectroscopy (CDBPAS) and Positron lifetime Spectroscopy were applied to study of characteristics of a poly crystal samples. In this investigation the numerical analysis of the Doppler spectra was employed to the determination of the shape parameter, S-parameter value. The samples were exposed by 3.0 MeV proton beams with the intensities ranging between 0 to ${\sim}10^{14}$ particles. The S-parameter values decreased as increased the proton beam, that indicates the protons trapped in vacancies. Lifetime ${\tau}_1$ shows that positrons are trapped in mono vacancies. Lifetime ${\tau}_2$ is not changed according to proton irradiation that indicate the cluster vacancies of the grain structure.

A Study on the Defect Annealing of Hafnium Metal By Positron Annihilation Techniques (양전자소멸기법을 이용한 하프늄금속의 격자결함 회복에 관한 연구)

  • Kang, Myung-Soo;Jung, Sung-Hoon;Yoon, Young-Ku;Park, Yong-Ki
    • Nuclear Engineering and Technology
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    • v.25 no.1
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    • pp.71-79
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    • 1993
  • Positron annihilation characteristics and microhardness of 25% cold worked and isochronally annealed hafnium specimens were measured to study recovery and recrystallization stages of hafnium specimens. The annihilation lifetime of positrons in hafnium has been measured for the distinct cases of annihilation in the annealed lattice and annihilation after trapping at lattice defects generated by cold deformation at room temperature. The annihilation lifetime in the annealed lattice was 187 $\pm$3.7 psec, whereas it was 217 $\pm$ 4.2 psec for positrons trapped at deformation-induced defects (mostly dislocations). The changes in Doppler broadening and hardness showed similar trend in the recrystallization range, however, the measured value of Doppler broadening variation were quite sensitive to changes in the recovery region in which the variation in hardness value was completely insensitive. Recovery of cold worked hafnium initiated at about 623 K and recrystallization occurred at around 1023 K.

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