• Title/Summary/Keyword: Powder sputtering

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Fabrication of Ti-Mo Core-shell Powder and Sintering Properties for Application as a Sputtering Target (Ti-Mo 코어-쉘 분말 제조 및 소결 특성 연구)

  • Won Hee Lee;Chun Woong Park;Heeyeon Kim;Yuncheol Ha;Jongmin Byun;Young Do Kim
    • Journal of Powder Materials
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    • v.31 no.1
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    • pp.43-49
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    • 2024
  • In this study, a core-shell powder and sintered specimens using a mechanically alloyed (MAed) Ti-Mo powder fabricated through high-energy ball-milling are prepared. Analysis of sintering, microstructure, and mechanical properties confirms the applicability of the powder as a sputtering target material. To optimize the MAed Ti-Mo powder milling process, phase and elemental analyses of the powders are performed according to milling time. The results reveal that 20 h of milling time is the most suitable for the manufacturing process. Subsequently, the MAed Ti-Mo powder and MoO3 powder are milled using a 3-D mixer and heat-treated for hydrogen reduction to manufacture the core-shell powder. The reduced core-shell powder is transformed to sintered specimens through molding and sintering at 1300 and 1400℃. The sintering properties are analyzed through X-ray diffraction and scanning electron microscopy for phase and porosity analyses. Moreover, the microstructure of the powder is investigated through optical microscopy and electron probe microstructure analysis. The Ti-Mo core-shell sintered specimen is found to possess high density, uniform microstructure, and excellent hardness properties. These results indicate that the Ti-Mo core-shell sintered specimen has excellent sintering properties and is suitable as a sputtering target material.

ITO Films Deposited by Sputter Method of Powder Target at Room Temperature. (상온에서 분말타겟의 스퍼터에 의해 증착된 ITO박막)

  • 김현후;이재형;신성호;신재혁;박광자
    • Journal of the Korean institute of surface engineering
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    • v.33 no.5
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    • pp.349-355
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    • 2000
  • Indium tin oxide (ITO) thin films have been deposited on PET (polyethylene terephthalate) and glass substrates by a do magnetron sputter method of powder target without heat treatments such as substrate heater and post heat treatment. During the sputtering deposition, sputtering parameters such as sputtering power, working pressure, oxygen gas mixture, film thickness and substrate-target distance are important factors for the high quality of ITO thin films. The structural, electrical and optical properties of as-deposited ITO oxide films are investigated by sputtering power, oxygen partial pressure and films thickness among the several sputtering conditions. XRD patterns of ITO films are affected by sputtering power and pressure. As the power and pressure are increased, (411) and (422) peaks of ITO films are grown strongly. Electrical resistivity is also increased, as the sputtering power and pressure are increased. Transmittance of ITO thin films in the visible light ranges is lowered with an increase of sputtering power and film thickness. Reflectance of ITO films in infra-red region is decreased, as the power and pressure is increased.

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Epitaxial growth of Tin Oxide thin films deposited by powder sputtering method

  • Baek, Eun-Ha;Kim, So-Jin;Gang, Hyeon-Cheol
    • Proceedings of the Korean Vacuum Society Conference
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    • 2015.08a
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    • pp.185.2-185.2
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    • 2015
  • Tin Oxide (SnO2) has been widely investigated as a transparent conducting oxide (TCO) and can be used in optoelectronic devices such as solar cell and flat-panel displays. In addition, it would be applicable to fabricating the wide bandgap semiconductor because of its bandgap of 3.6 eV. There have been concentrated on the improvement of optical properties, such as conductivity and transparency, by doping Indium Oxide and Gallium Oxide. Recently, with development of fabrication techniques, high-qulaity SnO2 epitaxial thin films have been studied and received much attention to produce the electronic devices such as sensor and light-emitting diode. In this study, powder sputtering method was employed to deposit epitaxial thin films on sapphire (0001) substrates. A commercial SnO2 powder was sputtered. The samples were prepared with varying the growth parameters such as gas environment and film thickness. Then, the samples were characterized by using XRD, SEM, AFM, and Raman spectroscopy measurements. The details of physical properties of epitaxial SnO2 thin films will be presented.

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Structural and Optical Properties of ZnO/Glass Thin Films Grown by Radio-Frequency Magnetron Sputtering with a Powder Target (ZnO 분말 타겟을 스퍼터링하여 Glass 기판위에 증착한 ZnO 박막의 구조적, 광학적 특성)

  • Sun, J.H.;Kang, H.C.
    • Journal of the Korean Vacuum Society
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    • v.18 no.5
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    • pp.394-401
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    • 2009
  • This paper reports the structural and optical properties of ZnO/glass thin films grown by radio-frequency magnetron sputtering with a powder target. In contrast to ZnO ceramic target typically used, a ZnO raw powder target was sputtered in this study. ZnO grew with the (0002) preferred orientation along the surface normal direction. Initially, the surface of ZnO thin films was flat considerably and then it became rougher as the thickness increased. The optical transmittance was as high as 88% in the range of 400-1000 nm. The bandgap energy of 3.23 eV at the 220 nm thick sample was estimated.

Preparation of ATO Thin Films by DC Magnetron Sputtering (I) Deposition Characteristics (DC Magnetron Sputtering에 의한 ATO 박막의 제조 (I)증착특성)

  • Yoon, C.;Lee, H.Y.;Chung, Y.J.
    • Journal of the Korean Ceramic Society
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    • v.33 no.4
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    • pp.441-447
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    • 1996
  • Sb doped SnO2(ATO:Antinomy doped Tin Oxide) thin films were prepared by a DC magnetron spttuering method using oxide target and the deposition characteristics were investigated. The experimental conditions are as follows :Ar flow rate : 100 sccm oxygen flow rates ; 0-100 sccm deposition temperature ; 250 -40$0^{\circ}C$ DC sputter powder ; 150~550 W and sputtering pressure ; ; 2~7 mTorr. Deposition rate greatly depends not on the deposition temperature but on the reaction pressure oxygen flow rate and sputter power,. when the sputter powder is low ATO thin films with (110) preferred orientation are deposited. And when the sputter power is high (110) prefered orientation appeares with decreasing of oxygen flow rate and increasing of suputte-ring pressure.

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Sintering of Nd-Fe-B Magnets from Dy Coated Powder

  • Kim, Jin Woo;Kim, Young Do
    • Journal of Powder Materials
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    • v.20 no.3
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    • pp.169-173
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    • 2013
  • High-coercive (Nd,Dy)-Fe-B magnets were fabricated via dysprosium coating on Nd-Fe-B powder. The sputtering coating process of Nd-Fe-B powder yielded samples with densities greater than 98%. $(Nd,Dy)_2Fe_{14}B$ phases may have effectively penetrated into the boundaries between neighboring $Nd_2Fe_{14}B$ grains during the sputtering coating process, thereby forming a $(Nd,Dy)_2Fe_{14}B$ phase at the grain boundary. The maximum thickness of the Dy shell was approximately 70 nm. The maximum coercivity of the Dy sputter coated samples(sintered samples) increased from 1162.42 to 2020.70 kA/m. The microstructures of the $(Nd,Dy)_2Fe_{14}B$ phases were effectively controlled, resulting in improved magnetic properties. The increase in coercivity of the Nd-Fe-B sintered magnet is discussed from a microstructural point of view.

Manufacturing and Macroscopic Properties of Cold Sprayed Cu-Ga Coating Material for Sputtering Target

  • Jin, Young-Min;Jeon, Min-Gwang;Park, Dong-Yong;Kim, Hyung-Jun;Oh, Ik-Hyun;Lee, Kee-Ahn
    • Journal of Powder Materials
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    • v.20 no.4
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    • pp.245-252
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    • 2013
  • This study attempted to manufacture a Cu-Ga coating layer via the cold spray process and to investigate the applicability of the layer as a sputtering target material. In addition, changes made to the microstructure and properties of the layer due to annealing heat treatment were evaluated, compared, and analyzed. The results showed that coating layers with a thickness of 520 mm could be manufactured via the cold spray process under optimal conditions. With the Cu-Ga coating layer, the ${\alpha}$-Cu and $Cu_3Ga$ were found to exist inside the layer regardless of annealing heat treatment. The microstructure that was minute and inhomogeneous prior to thermal treatment changed to homogeneous and dense with a more clear division of phases. A sputtering test was actually conducted using the sputtering target Cu-Ga coating layer (~2 mm thickness) that was additionally manufactured via the cold-spray coating process. Consequently, this test result confirmed that the cold sprayed Cu-Ga coating layer may be applied as a sputtering target material.

Strain evolution in Tin Oxide thin films deposited by powder sputtering method

  • Cha, Su-Yeon;Gang, Hyeon-Cheol
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.283.1-283.1
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    • 2016
  • Tin Oxide(SnO2) has been widely investigated as a transparent conducting oxide (TCO) and can be used in optoelectronic devices such as solar cell and flat-panel displays. It would be applicable to fabricating the wide bandgap semiconductor because of its bandgap of 3.6 eV. In addition, SnO2 is commonly used as gas sensors. To fabricate high quality epitaxial SnO2 thin films, a powder sputtering method was used, in contrast to typical sputtering technique with sintered target. Single crystalline sapphire(0001) substrates were used. The samples were prepared with varying the growth parameters such as gas environment and film thickness. Then, the samples were characterized by using X-ray diffraction, scanning electron microscopy, and atomic force microscopy measurements. We found that the strain evolution of the samples was highly affected by gas environment and growth rate, resulted in the delamination under O2 environment.

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Target-Composition Effect on Hydroxyapatite Thin Films Coated on Titanium by r.f. Sputtering

  • Hamagami, Jun-ichi;Kokubu, Daisuke;Umegaki, Takao;Yamashita, Kimihiro
    • The Korean Journal of Ceramics
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    • v.4 no.4
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    • pp.372-376
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    • 1998
  • Using calcium-phosphate-powder targets with the Ca/P ratios of 1.0-1.67, hydroxyapatite ($Ca_{10}(PO_4)_6(OH)_2$, HAp) thin films with 4-7㎛ thickness were prepared on titanium metal plates by r.f. magnetron sputtering, followed an annealing at $200^{\circ}C$ for 24 hr under a high water vapor pressure using an autoclave. All the specimens were systematically characterized by XRD, FT-IR, SEM and EDS analyses. The post-annealed films were confirmed to be a nonstoichiometric oxyhydroxyapatite by XRD and FT-IR measurements.

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Synthesis and Properties of a Ge2Sb2Te5 Sputtering for Use as a Target by Spark Plasma Sintering (방전 플라즈마 소결에 의한 Ge2Sb2Te5 스퍼터링 타겟 제조 및 특성)

  • Bang, C.W.;Kim, K.B.;Lee, J.K.
    • Journal of Powder Materials
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    • v.21 no.2
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    • pp.137-141
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    • 2014
  • In this study, we report the sintering behavior and properties of a $Ge_2Sb_2Te_5$ alloy powders for use as a sputtering target by spark plasma sintering. The effect of various sintering parameters, such as pressure, temperature and time, on the density and hardness of the target has been investigated in detail. Structural characterization was performed by scanning electron microscopy and X-ray diffraction. Hardness and thermal properties were measured by differential scanning calorimetry and micro-vickers hardness tester. The density and hardness of the sintered $Ge_2Sb_2Te_5$ materials were 5.8976~6.3687 $g/cm^3$ and 32~75 Hv, respectively.