• 제목/요약/키워드: Pressure sensor

검색결과 1,573건 처리시간 0.021초

Implementation of an Integrated Pressure-sensor System Adapted to the Optimum Sensitivity

  • Hong, Sung-Hee;Cho, Chun-Hyung
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제17권2호
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    • pp.186-191
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    • 2017
  • An integrated pressure-sensor system was developed using the sensor-conditioning processes, which resulted in the optimum sensitivity of the pressure-sensor through the signal amplification, noise reduction, and level shift. Due to the specified characteristics among the components, such as operation range, the sensor output was generally limited compared to the full scale of the reading when coupled with other parts. Devices fabricated exhibited comparable characteristics with higher pressure sensitivity to that of the pressure sensor without sensor-conditioning process. In this work, the sensor resolution was at least enhanced at least by 25% using the sensor-conditioning processes.

An Integrated Sensor for Pressure, Temperature, and Relative Humidity Based on MEMS Technology

  • Won Jong-Hwa;Choa Sung-Hoon;Yulong Zhao
    • Journal of Mechanical Science and Technology
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    • 제20권4호
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    • pp.505-512
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    • 2006
  • This paper presents an integrated multifunctional sensor based on MEMS technology, which can be used or embedded in mobile devices for environmental monitoring. An absolute pressure sensor, a temperature sensor and a humidity sensor are integrated in one silicon chip of which the size is $5mm\times5mm$. The pressure sensor uses a bulk-micromachined diaphragm structure with the piezoresistors. For temperature sensing, a silicon temperature sensor based on the spreading-resistance principle is designed and fabricated. The humidity sensor is a capacitive humidity sensor which has the polyimide film and interdigitated capacitance electrodes. The different piezoresistive orientation is used for the pressure and temperature sensor to avoid the interference between sensors. Each sensor shows good sensor characteristics except for the humidity sensor. However, the linearity and hysteresis of the humidity sensor can be improved by selecting the proper polymer materials and structures.

PMMA가 코팅된 주름 구조를 갖는 다공성규소 격판을 이용한 광섬유 압력센서 (Fiber-Optic Pressure Sensor Using a Rugate-Structured Porous Silicon Diaphragm Coated with PMMA)

  • 이기원;조소연
    • 센서학회지
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    • 제22권3호
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    • pp.227-232
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    • 2013
  • In this research, fiber-optic pressure sensors were fabricated with rugate-structured porous silicon (RPS) diaphragms coated with PMMA (Polymethyl-Methacrylate). The reflectance spectrum of the PMMA/RPS diaphragm was almost the same as that of uncoated RPS diaphragm. However the mechanical strength of the PMMA/RPS diaphragm increased more than that of the uncoated diaphragm. As a result, the fiber-optic sensor fabricated with PMMA/RPS diaphragm could successfully detect more high pressure difference without diaphragm damage than the highest detectable pressure difference of the sensor with normal RPS diaphragm. The response data of the fiber-optic sensor recorded as a function of pressure difference were fitted by theoretical curves. During this process, elastic moduli of the used PMMA/RPS diaphragms were obtained numerically. The dynamic response properties of the fiber-optic sensor were also investigated under continuous variation of the pressure difference conditions.

손목 피부 온도에 의한 맥센서 어레이(array)의 신호 변동 및 보정 (Signal Change and Compensation of Pulse Pressure Sensor Array Due to Wrist Surface Temperature)

  • 전민호;전영주;김영민
    • 센서학회지
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    • 제26권2호
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    • pp.141-147
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    • 2017
  • A pressure sensor in pulse measurement system is a core component for precisely measuring the pulse waveform of radial artery. A pulse sensor signal that measures the pulse wave in contact with the skin is affected by the temperature difference between the ambient temperature and skin surface. In this study, we found experimentally that the signal changes of the pressure sensors and a temperature sensor were caused by the temperature of the wrist surface while the pressure sensor was contacted on the skin surface for measuring pulse wave. To observe the signal change of the pulse sensor caused by temperature increase on sensor surface, Peltier device that can be kept at a set temperature was used. As the temperature of Peltier device was kept at $35^{\circ}C$ (the maximum wrist temperature), the device was put on the pulse sensor surface. The temperature and pressure signals were obtained simultaneously from a temperature sensor and six pressure sensors embedded in the pulse sensor. As a result of signal analysis, the sensor pressure was decreased during temperature increase of pulse sensor surface. In addition, the signal difference ratio of pressure and temperature sensors with respect to thickness of cover layer in pulse sensor was increased exponentially. Therefore, the signal of pressure sensor was modified by the compensation equation derived by the temperature sensor signal. We suggested that the thickness of cover layer in pulse sensor should be designed considering the skin surface temperature.

TPMS 적용을 위한 가변 정전 용량형 압력센서 개발 (The development of a variable capacitive pressure sensor for TPMS(tire pressure monitoring system))

  • 최범규;김도형;오재근
    • 센서학회지
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    • 제14권4호
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    • pp.265-271
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    • 2005
  • In this study, a variable capacitive pressure sensor is fabricated for TPMS (Tire Pressure Monitoring System). This study is for developing sensors which consecutively measure the tire pressure given as 30 psi from the industrial standard. For improving non-linearity of the prior capacitive pressure sensors, it is suggested that touch mode capacitive pressure sensor be applied. In addition, initial capacitance is designed as small as possible for the conformity to the wireless sensor. ANSYS, commercial FEA package, is used for designing and simulating the sensor. The device is progressed by MEMS (Micro Electro Mechanical Systems) fabrication and packaged with PDMS. The result is obtained sensitivity, 1 pF/psi, through a pressure test. The simulation result is discrepant from experiment one. Wafer's uniformity is presumed as the main reason of discrepancy.

실리콘 압력센서를 이용한 압력 모니터링 시스템 개발 (Development of Pressure Monitoring System Using Silicon Pressure Sensor)

  • 이영태;권익현
    • 반도체디스플레이기술학회지
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    • 제17권4호
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    • pp.76-79
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    • 2018
  • In this paper, we developed a pressure monitoring system using silicon pressure sensor. The pressure monitoring system was developed on the basis of a microcontroller, and a self-developed silicon pressure sensor was applied. The pressure monitoring system outputs the current pressure value via UART communication. In addition, it includes a function of displaying by LED when the preset three-step pressure (low, medium, high pressure) is reached. The silicon pressure sensor used in the pressure monitoring system was set to 0 kPa, 10 kPa, 26 kPa, and the pressure monitoring system was evaluated because the measured maximum pressure was in the range of 100 kPa.

Development of Capacitive-type Pressure Mapping Sensor using Printing Technology

  • Lee, Young-Tae
    • 센서학회지
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    • 제26권1호
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    • pp.24-27
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    • 2017
  • In this study, I developed a simple and low cost process-printing a silver, carbon, dielectric, adhesive layer on PET films using screen printing technology and bonding the two films face-to-face-to fabricate a low price capacitive pressure-mapping sensor. Both electrodes forming the pressure measuring capacitor are arranged between the two PET films similar to a sandwich. Therefore, the sensor has the advantage of minimizing the influence of external noise. In this study, a $10{\times}10$ capacitance-type pressure-mapping sensor was fabricated and its characteristics were analyzed.

차압식 유량계를 실장을 위한 Single Capacitive Type Differential 압력 센서 개발 (Fabrication of Single Capacitive type Differential pressure sensor for Differential Flow meter)

  • 신규식;송상우;이경일;이대성;정재필
    • 마이크로전자및패키징학회지
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    • 제24권1호
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    • pp.51-56
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    • 2017
  • 최근 계측기의 소형화, 전자화에 따라 차압식 유량계의 경우 기존에 기계가공을 통해 개발하던 센서부를 전자식 MEMS 차압센서로 대체하려는 많은 노력이 있으나, MEMS 차압센서의 경우 고압이 인가시 실리콘 다이아프램의 파괴 및 센서의 접합부의 파괴가 발생하는 문제점이 있다. 따라서 본 논문에서는 proof pressure 이상의 압력에서 센서의 다이아프램이 파괴되지 않는 구조를 제안하였으며, 그에 따른 차압식 압력센서를 설계 및 제작하였다. 센서 동작압력(0-3 bar)의 3배 이상의 압력에서 센서의 동작특성을 평가하였다. 개발된 센서는 $3.0{\times}3.0mm$이며, 0~3 bar 사이의 압력에서 LCR meter (HP 4284a)로 측정한 결과 3.67 pF at 0bar, 5.13 pF at 3 bar를 나타내었으며, 센서의 동작압력(0-3 bar)에서 0.37%의 hysteresis를 나타내는 압력센서를 개발하였다.

약물 투여에 따른 기니피그 대장 운동 측정을 위한 압력센서 개발 (Development of Pressure Sensor for Identifying Guinea Pig's Large Intestinal Motility Caused by Drug)

  • 박재순;박정호;김응보;조성환;장수정;정연호
    • 한국전기전자재료학회논문지
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    • 제29권1호
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    • pp.23-29
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    • 2016
  • In this paper, in order to quantify the peristalsis occurrence in a guinea pig's large intestine, a miniaturized air-gap capacitive pressure sensor was fabricated through micro-electro-mechanical system (MEMS). The proposed pressure sensor is a two-layered biocompatible polyimide substrate consisting of an air-gap capacitive plates between the substrates. The proposed pressure sensor was designed with a careful consideration of the structure and motility mechanism of the guinea pig's large intestine. Artificial pellets were mounted on a prototype pressure sensor to provide some redundancies in the form of size and shape of the guinea pig feces. Capacitance of a prototype sensor was recorded to be 2.5 ~ 3 pF. This capacitance value was later converted to count value using a lab fabricated data conversion system. Sensitivity of the pressure sensor was recorded to be below 1 mmHg per atmospheric pressure. During in vivo testing, artificial peristalsis caused by drug injection was measured by inserting the prototype pressure sensor into the guinea pig's large intestine and pressure data obtained due to artificial peristalsis was graphed using a labview program. The proposed pressure sensor could measure the pressure changes in the proximal, medial, and distal parts of the large intestine. The results of the experiment confirmed that pressure changes of guinea pig's large intestine was proportional to the degree of drug injection.

Cu-Ni 박막 스트레인 게이지를 이용한 다이어프램식 압력 센서-II:압력 센서의 설계 제작의 특성 (Diaphragm-Type Pressure Sensor with Cu-Ni Thin Film Strain Gauges-II : Design Fabrication and Characteristics of a Pressure Sensor)

  • 민남기;전재형;박찬원
    • E2M - 전기 전자와 첨단 소재
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    • 제10권10호
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    • pp.1022-1028
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    • 1997
  • In this paper we present the construction details and output characteristics of a diaphragm-type pressure sensor with Cu-Ni(53:47) thin-film strain gauges. In order to improve the sensitivity and the temperature compensation two circumferential gauges are placed near the center of the diaphragm and two radial gauges are located near the edge. For all the gauges the relative change in resistance ΔR/R with pressure is of the order 10$^{-3}$ for the maximum pressure. The output is found to be linear over the entire pressure range(0-30kfg/cm$^2$)and the output sensitivity obtained is 1.6mV/V. The maximum nonlinearity observed in output characteristics is 0.35%FS for 5V excitation and the hysteresis is less than 0.1%FS.

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