• Korean Journal of Remote Sensing
• /
• v.7 no.1
• /
• pp.69-86
• /
• 1991

An unsupervised region based image segmentation algorithm implemented with a pyramid structure has been developed. Rather than depending on thraditional local splitting and merging of regions with a similarity test of region statistics, the algorithm identifies the homogenous and boundary regions at each level of pyramid, then the global parameters of esch class are estimated and updated with values of the homogenous regions represented at the level of the pyramid using the mixture distribution estimation. The image is then classified through the pyramid structure. Classification results obtained for both simulated and SPOT imagery are presented.

• Journal of Sensor Science and Technology
• /
• v.22 no.6
• /
• pp.433-438
• /
• 2013

In this paper, we found surface shapes are affected by several parameters of RIE, such as RF power, pressure, temp, and process times. The reflectance of pyramid and half sphere structures show differences among shapes, size, height, and depth of those structures. We made about $1{\mu}m$ pyramid and half sphere shapes of silicon surface with RIE. For comparing the reflectance, pyramid and half sphere structures are fabricated with same height. Pyramid structure cell shows higher cell efficiency of 12.5% by 1.1% than one of half sphere structure of 11.4%. The light absorption is more increased through the pyramid structure than half sphere structure.

• Journal of Sensor Science and Technology
• /
• v.20 no.3
• /
• pp.207-212
• /
• 2011

In this study, pyramid structured black silicon process was developed in order to overcome disadvantages of using wet etching to texture the surface of single crystalline silicon and using grass/needle-like black silicon structure. In order to form the pyramidal black silicon structure on the silicon surface, the RIE system was modified to equip with metal-mesh on the top of head shower. The process conditions were : $SF_6/O_2$ gas flow 15/15 sccm, RF power of 200 W, pressure at 50 mTorr ~ 200 mTorr, and temperature at $5^{\circ}C$. The pressure did not affect the pyramid structure significantly. Increasing processing time increased the size of the pyramid, however, the size remained constant at 1 ${\mu}M$ ~ 2 ${\mu}M$ between 15 minutes ~ 20 minutes of processing. Pyramid structure of 1 ${\mu}M$ in size showed to have the lowest reflectivity of 7 % ~ 10 %. Also, the pyramid structure black silicon is more appropriate than the grass/needle-like black silicon when creating solar cells.

• Current Photovoltaic Research
• /
• v.5 no.2
• /
• pp.59-62
• /
• 2017

Surface texturing is affected the uniformity and size of pyramid with saw mark defect density. To analysis the influence of the saw mark defect density, we textured various si wafer. When the texturing process proceeds without the saw mark removal, silicon wafer of low-saw mark defect density showed small pyramid size of $3.5{\mu}m$ with the lowest average value of the reflectance of 10.6%. When texturing carried out after removal of the saw mark using the TMAH solution, we obtained a reflectance of about 11% and the large pyramid size of $5{\mu}m$. As a result, saw mark wafers showed a better pyramid structure than saw mark-free wafer. This result showed that saw mark can take place more smooth etching by the KOH solution and saw mark-free wafer is determined to be a factor that have a higher reflectance and a large pyramid.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.59 no.3
• /
• pp.664-668
• /
• 2010

This paper presents a System-On-a-chip (SoC) for embedded image processing and pattern recognition applications that need Gaussian Pyramid structure. The system is fully implemented into Field-Programmable Gate Array (FPGA) based on the prototyping platform. The SoC consists of embedded processor core and a hardware accelerator for Gaussian Pyramid construction. The performance of the implementation is benchmarked against software implementations on different platforms.

• Journal of Korea Multimedia Society
• /
• v.19 no.7
• /
• pp.1154-1158
• /
• 2016

This paper presents a System-On-a-chip for embedded image processing applications that need Gaussian Pyramid structure. The system is fully implemented into Field-Programmable Gate Array (FPGA) based on the prototyping platform. The SoC consists of embedded processor core and a hardware accelerator for Gaussian Pyramid construction. The performance of the implementation is benchmarked against software implementations on different platforms.

• Journal of the Korean Institute of Telematics and Electronics
• /
• v.26 no.10
• /
• pp.1561-1570
• /
• 1989

In this paper, we propose an image coding scheme which combines the Laplacian pyramid structure and a hierarchical finite state classified vector quantizer in the DCT domain, namely FSDCT-CTQ. First, an optimal bit allocation problem for fixed rates DCT-CVQ on the Laplacian pyramid structure is described. In an asymptotic case, with an optimal bit allocation, a coding gain over scalar quantization of each Laplacian plane is derived. Second, it is experimentallhy shown that the Laplacian pyramid structure provides a considerable codng gain in the sense of total MMSE (minimum mean squared error). Finally, we propose an FS-DCT-CVQ which exploits the hierarchicla correlation between the Laplacian planes. Simulation results on real images show that the proposed coding scheme can reconstruct an image with 30.33 dB at 0.192 bpp, 32.45 dB at 0.385 bpp, respectively.

• The Journal of Korean Institute of Communications and Information Sciences
• /
• v.21 no.12
• /
• pp.3033-3045
• /
• 1996

In this paper, we propse an object-oriented coding method in low bit-rate channels using pyramid structure and residual image compensation. In the motion estimation step, global motion is estimated using a set of multiresolution images constructed in a pyramid structure. We split an input image into two regions based on the gradient value. Regions with larte motions obtain observation points at low resolution level to guarantee robustness to noise and to satisfy a motion constraint equation whereas regions with local motions such as eye, and lips get observation points at the original resolution level. Local motion variations and intesity variations of an image reconstructed by the golbal motion are compensated additionally by using the previous residual image component. Finally, the model failure (MF) region is compensated by the pyramid mapping of the previous displaced frame difference (DFD). Computer simulation results show that the proposed method gives better performance that the convnetional one in terms of the peak signal to noise ratio (PSNR), compression ratio (CR), and computational complexity.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.08a
• /
• pp.174-175
• /
• 2012

(In, Ga) N-based III-nitride semiconductor materials have been viewed as the most promising materials for the applications of blue and green light emitting devices such as light-emitting diodes (LEDs) and laser diodes. Although the InGaN alloy can have wide range of visible wavelength by changing the In composition, it is very hard to grow high quality epilayers of In-rich InGaN because of the thermal instability as well as the large lattice and thermal mismatches. In order to avoid phase separation of InGaN, various kinds of structures of InGaN have been studied. If high-quality In-rich InGaN/GaN multiple quantum well (MQW) structures are available, it is expected to achieve highly efficient phosphor-free white LEDs. In this study, we proposed a novel InGaN double hetero-structure grown on GaN nano-pyramids to generate broad-band red-color emission with high quantum efficiency. In this work, we systematically studied the optical properties of the InGaN pyramid structures. The nano-sized hexagonal pyramid structures were grown on the n-type GaN template by metalorganic chemical vapor deposition. SiNx mask was formed on the n-type GaN template with uniformly patterned circle pattern by laser holography. GaN pyramid structures were selectively grown on the opening area of mask by lateral over-growth followed by growth of InGaN/GaN double hetero-structure. The bird's eye-view scanning electron microscope (SEM) image shows that uniform hexagonal pyramid structures are well arranged. We showed that the pyramid structures have high crystal quality and the thickness of InGaN is varied along the height of pyramids via transmission electron microscope. Because the InGaN/GaN double hetero-structure was grown on the nano-pyramid GaN and on the planar GaN, simultaneously, we investigated the comparative study of the optical properties. Photoluminescence (PL) spectra of nano-pyramid sample and planar sample measured at 10 K. Although the growth condition were exactly the same for two samples, the nano-pyramid sample have much lower energy emission centered at 615 nm, compared to 438 nm for planar sample. Moreover, nano-pyramid sample shows broad-band spectrum, which is originate from structural properties of nano-pyramid structure. To study thermal activation energy and potential fluctuation, we measured PL with changing temperature from 10 K to 300 K. We also measured PL with changing the excitation power from 48 ${\mu}W$ to 48 mW. We can discriminate the origin of the broad-band spectra from the defect-related yellow luminescence of GaN by carrying out PL excitation experiments. The nano-pyramid structure provided highly efficient broad-band red-color emission for the future applications of phosphor-free white LEDs.

• Proceedings of the Korean Institute of Communication Sciences Conference
• /
• 1988.10a
• /
• pp.257-261
• /
• 1988