• 대한전기학회:학술대회논문집
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• 대한전기학회 2000년도 하계학술대회 논문집 C
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• pp.2116-2118
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• 2000

In the technique of Q-switching, very fast electronically controlled optical shutters can be made by using the electro-optic effect in crystals or liquids. The driver for the Pockels cell must be a high-speed, high-voltage switch which also must deliver a sizeable current. Common switching techniques include the use of vacuum tubes, cold cathode tubes, thyratrons, SCRs, and avalanche transistors. Semiconductor devices such as SCRs, avalanche transistors, and MOSFETs have been successfully employed to drive Pockels cell Q-switch. In this study, a simple driver for the Pockels cell Q-switch was developed by using SCRs, pulse transformer and TTL ICs. The Pockels cell Q-switch which was operated by this driver was employed in pulsed Nd:YAG laser system to investigate the operating characteristics of this Q-switch. And we have investigated the output characteristics of this Q-switch as a function of the Q-switch delay time to Xe flashlamp current on.

• 디지털콘텐츠학회 논문지
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• 제10권2호
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• pp.199-207
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• 2009

Q-스위칭은 셔터나 다른 광학소자를 레이저 광 공진기 내에 넣어 광이 공진기 내에서 발진하는데 손실을 유발하고, 충분한 반전분포가 활성 매질 내에서 생성되면 순간적으로 셔터를 열어 공진기 내에 축적된 에너지가 매우 강한 빛으로 방출되게 하는 것이다. 이와 같이 Q-스위칭은 레이저 공진기의 Q--factor를 감소시켰다가 갑자기 증가시키는 것이다. 레이저 Q-스위칭의 방법에는 mechanical switching 방법, electro-optic switching 방법, switching by saturable absorber 방법, acousto-optic switching 방법 등 크게 4가지가 쓰이고 있다. 이들 중 전기광학적인 효과에 의한 전기적인 전환은 짧은 펄스폭의 Q-스위칭 펄스를 생성할 수 있기 때문에 널리 사용되고 있다. 따라서, 전기광학효과의 특성을 가진 Pockel cell은 Q--switch로 사용하기 적합한 것으로 알려져 있다. 본 연구에서는 포켈스 셀 Q-스위치용 구동 장치를 스위칭 소자인 FET와 PIC 마이크로프로세서 및 펄스 트랜스로 설계, 제작하고, 펄스형 Nd:YAG 레이저 시스템에 적용하여 Q-스위치의 동작 특성을 조사, 연구하였다. 또한, 이 Q-스위치를 통하여 출력된 Nd:YAG 레이저 빔의 측정치를 이론적 계산에 의해 구해진 예상치와 비교하여 Q-스위칭 된 레이저 빔의 특성을 분석하였다.

• 한국광학회지
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• 제24권2호
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• pp.58-63
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• 2013

본 논문에서는 능동형 Q-스위칭 광섬유 레이저에서 Q-스위치 상승 시간이 출력 펄스에 미치는 영향을 이론적으로 분석하였다. Finite Difference Time Domain (FDTD) 방법을 이용해서 비율 방정식과 전파 방정식에 대한 모델링을 수행하였다. Q-스위칭 광섬유 레이저에서 발생하는 Q-스위칭 펄스의 생성에 있어서 Q-스위치의 상승 시간이 출력 펄스 특성에 미치는 영향을 이론적으로 분석하였다. 또한, Q-스위치의 반복률에 따른 출력 펄스의 에너지 변화와 파형 변화를 확인하였다. Q-스위치 반복률이 높아지고, Q-스위치의 상승 시간이 길어질수록 출력 펄스의 멀티 피크 현상이 줄어들고 안정된 가우시안 형태의 펄스 파형이 발생함을 확인 할 수 있었다.

• 한국세라믹학회지
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• 제40권4호
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• pp.375-379
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• 2003

In this paper, a novel design of multilayer ceramic-based Transmit/Receive (T/R) switch using Low Temperature Co-fired Ceramic (LTCC) technology have been presented. Compact T/R switch has been designed by transforming quarter-wave transmission line to its lumped equivalent circuit. Especially, high-Q three dimensional inductors with double strip have been proposed and incorporated. The proposed inductor has been modeled by multi-conductor coupled lines. A measured inductor quality factor (Q) of 80 and a Self-Resonance Frequency (SRF) of 6.6 GHz have been demonstrated. The inductor library has been incorporated into the design of WCDMA T/R switch.

• 대한전자공학회논문지
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• 제13권3호
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• pp.7-10
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• 1976

단일 펄스의 Nd-YAG 레이저를 발생시키기 위한 Q-스인치로서 LiNbO3 크리스탈을 사용할때 생기는 난점을 해결하기 위하여 그 중계자 특성을 조사하였으며 간단한 해결 방법을 제시하였다. To eliminate some difficulties encountered in the operation of LiNbO3crystal as a Q-switch for generating a single pulse Nd-YAG laser, the operational characteristics of the crystal, was investigated. Also a simple method for solving the difficulties was presented.

• Transactions on Electrical and Electronic Materials
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• 제16권4호
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• pp.173-178
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• 2015

In lieu of the excellent radio frequency (RF) performance of microelectromechanical system ( MEMS) switches, these micro switches need higher actuation voltage for their operation. This requirement is secondary to concerns over the swtiches’ reliability. This paper reports high reliability operation of RF MEMS switches with low voltage requirements. The proposed switch is optimised to perform in the Q-band, which results in actuation voltage of just 16.4 V. The mechanical stress gradient in the thin micro membrane is computed by simulating von Mises stress in a multi-physics environment that results in 90.4 MPa stress. The computed spring constant for the membrane is 3.02 N/m. The switch results in excellent RF performance with simulated isolation of above 38 dB, insertion loss of less than 0.35 dB and return loss of above 30 dB in the Q-band.

• Journal of Power Electronics
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• 제16권5호
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• pp.1716-1724
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• 2016

This paper proposes both an active-switched quasi-Z-source inverter (AS-qZSI) and an extended active-switched qZSI (EAS-qZSI), which are based on the classic qZSI. The proposed AS-qZSI adds only one active switch and one diode to the classic qZSI for increasing the voltage boost capability. Compared with other topologies based on the switched-inductor/capacitor qZSI, the proposed AS-qZSI requires fewer passive components in the impedance network under the same boost capability. Additionally, the proposed EAS-qZSI is designed by adding one inductor and three diodes to the AS-qZSI, which offers enhanced boost capability and lower voltage stress across the switches. The performances of the two proposed topologies are verified by simulation and experimental results obtained from a prototype with a 32-bit DSP built in a laboratory.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 1997년도 춘계학술대회 논문집
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• pp.1053-1057
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• 1997

Laser thin film process with a Q-switch pulsed YAG laser was performed for micro machining. In this research, we performed basic Cr thin film on glass substrates removal machining experiments. Form experiments, it happens not only evaporration of thin film but also spatter and cohesion of melting substance in working region, when machining a Cr thin film by Q-switch YAG laser beam irradiation. Critical energy of surface irradiation type by irradiation direction of laser in a face composing thin film on the glass is higher than that of back irradiation type, but the latter is favorable because of spatter appearance. In case of image formation position when laser beam is irradiated, the defocus is permitted to a certain extent within forcus depth. Ifexceeds focus depth, formation of pattern is vanishing step by step.

• Journal of Computing Science and Engineering
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• 제8권3호
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• pp.129-136
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• 2014

This paper presents the equivalent circuit modelling and eigenfrequency analysis of a wideband robust capacitive radio frequency (RF) microelectromechanical system (MEMS) switch that was designed using Poly-Si and Au layer membrane for highly reliable switching operation. The circuit characterization includes the extraction of resistance, inductance, on and off state capacitance, and Q-factor. The first six eigenfrequencies are analyzed using a finite element modeler, and the equivalent modes are demonstrated. The switch is optimized for millimeter wave frequencies, which indicate excellent RF performance with isolation of more than 55 dB and a low insertion loss of 0.1 dB in the V-band. The designed switch actuates at 13.2 V. The R, L, C and Q-factor are simulated using Y-matrix data over a frequency sweep of 20-100 GHz. The proposed switch has various applications in satellite communication networks and can also be used for devices that will incorporate the upcoming IEEE Wi-Fi 802.11ad protocol.

• 한국광학회:학술대회논문집
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• 한국광학회 2008년도 동계학술발표회 논문집
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• pp.121-122
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• 2008