• 한국결정성장학회지
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• 제30권2호
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• pp.78-81
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• 2020

양자점은 산소와 수분에 취약하기 때문에 수분과 산소를 막아줄 수 있는 베리어 특성을 가진 제품을 이용하여 샌드위치 형식 양자점 층을 감싸는 형태로 제조하여 양자점의 광학적 신회성을 평가하였다. 다른 보호막이 없는 양자점 레진으로만 이루어진 필름, 양자점 필름과 PET를 합지한 필름 및 베리어 필름을 합지한 양자점 필름, 3가지를 이용하여 온도 60℃, 습도 90 %인 고온고습 조건에서 650시간 동안 변화를 평가를 진행하였다. 베리어 필름과 합지한 양자점 필름 제품은 휘도와 CIE x 및 CIE y 값이 유지되는 반면 PET와 합지한 양자점 필름 제품은 휘도 8 %, CIE x 2 % 및 CIE y 8 %가 낮아졌다. 또한 수분과 산소에 그대로 노출되었던 양자점 필름 제품은 측정 전부터 산화되어 낮게 측정되었으며 최종적으로 휘도 12 %, CIE x 9 % 및 CIE y 14 %가 낮게 측정되었다.

• 정보저장시스템학회논문집
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• 제8권1호
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• pp.1-5
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• 2012

We present a method for preparing a quantum dot fluorescent monolayer film on a glass substrate. Since nanoparticles aggregate easily, it is difficult to prepare a nanoparticle monolayer film. We have used a covalent bond, the peptide bond, to fix quantum dots on the glass substrate. The surface of the quantum dot was functionalized with carboxyl groups, and the glass substrate was also functionalized with amino groups using a silane coupling agent. The carboxyl group can be strongly coupled to the amino group. We were able to successfully prepare a monolayer film of CdSe quantum dots on the glass substrate.

• Journal of Pharmaceutical Investigation
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• 제39권1호
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• pp.1-6
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• 2009

To overcome the stability problem of hydrophilic quantum dot (Q-dot), cellular uptake of hydrophobic instead of hydrophilic Q-dot was studied in the hope to find a simple method to use Q-dot as a cellular imaging probe. Hydrophobic Q-dot and poly-L-lactic acid (PLLA) were co-dissolved in chloroform to prepare stable films. Due to the cellular compatibility of PLLA, adherent cells were cultured on the film to observe the degree of Q-dot uptake and cytotoxicity of the prepared films. The results show that Q-dots were absorbed into NIH3T3 and EMT6 cells. Cellular uptake was also observed when hydrophobic Q-dots were coated directly on a glass plate. PLLA/Q-dot film and Q-dot coated on glass plate did not show major cytotoxicity. In vivo tumor model was also used to show the uptake of Q-dot from the PLLA/Q-dot film to the tumor site.

• 한국분말재료학회지
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• 제19권6호
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• pp.451-457
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• 2012

Nowadays, research and development on quantum dot have been intensively and comprehensively pursued worldwide in proportion to concurrent breakthrough in the field of nanotechnology. At present, quantum dot technology forms the main interdisciplinary basis of energy, biological and photoelectric devices. More specifically, quantum dot semiconductor is quite noteworthy for its sub-micro size and possibility of photonic frequency modulation capability by controlling its size, which has not been possible with conventionally fabricated bulk or thin film devices. This could lead to realization of novel high performance devices. To further understand related background knowledge of semiconductor quantum dot at somewhat extensive level, a review paper is presently drafted to introduce basics of (semiconductor) quantum dot, its properties, applications, and present and future market trend and prospect.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.135.2-135.2
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• 2014

Photon conversion technology for thin film solar cells is reviewed. The high-energy photons which are hardly absorbed in solar cells can be transformed the low energy photon by the photon conversion process such as down conversion or down shift, which can improve the solar cell efficiency over the material limit. CdSe-based quantum dot materials commonly used in LED can be used as the photon conversion layer for Si thin film solar cells. The photon conversion structure of CdSe-based quantum dot for Si thin film solar cells will be presented and the pros and cons for the Si thin film solar cells integrated with the photon conversion layers will be discussed.

• 한국전기전자재료학회논문지
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• 제17권9호
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• pp.988-993
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• 2004

Luminescence characteristics of Ag-doped ZnO as the quantum dot materials to increasing the efficiency on dye-sensitized solar cells (DSC) have been studied. Ag doped ZnO powder was produced by the self-sustaining combustion process using ultrasonic spraying heating method. Luminescence wavelength region of the ZnO by Ag doping was shifted to longer wavelength. Tn the case of the Ag doped ZnO powder, broad luminescence spectrum centered on 600nm was observed. On the other hand, we compared PL data of RTA treated ZnO:Ag film at various temperatures because the front electrode of solar cell was in need of the sintering process. In XRD and PL data for RTA treated film at the 500$^{\circ}C$ showed good property. And, it was found that the grain size wasn't growing but only optical property was changed. According to the result of XRD, PL, absorption, emission spectrum and DV-X${\alpha}$ used in theoretical calculation, it is considered to be possible to use Ag doped ZnO as quantum dot material for improving DSC efficiency.

• 전자공학회논문지
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• 제51권8호
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• pp.167-171
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• 2014

평판 디스플레이(plate panel display)가 휴대용으로 발전하면서 박막화, 고색재현성, 고휘도에 관한 연구가 활발히 이루어지고 있으며, 광원으로써 LED, OLED가 주로 이용되고 있다. 이러한 광원의 소재로 양자점에 관한 연구가 많이 이루어 지고 있는데, 양자점은 고색재현성과 유연디스플레이 구현에 있어서 주목받는 차세대 반도체 나노형광체 이다. 본 연구에서는 평판 디스플레이를 구현함에 있어서 양자점을 이용하는 방법에 관하여 제시하였다. CdSe/ZnS 양자점을 PET베리어 필름에 $100{\mu}m$ 두께로 도포하고 455nm의 파장을 갖는 청색 LED를 광원으로하여 빛을 조사하는 디바이스를 제작하고 광특성을 평가하였으며, LCD의 색변환 필름으로써 양자점의 적용 가능성을 제시하였다.

• 대한화학회지
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• 제59권1호
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• pp.97-102
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• 2015

• 대한기계학회:학술대회논문집
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• 대한기계학회 2004년도 춘계학술대회
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• pp.1376-1381
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• 2004

Understanding the thermal conductivity and heat transfer processes in superlattice structures is critical for the development of thermoelectric materials and optoelectronic devices based on quantum structures. $Chen^{(1)}$ developed ballistic diffusive equation(BDE) for alternatives of the Boltzmann equation that can be applied to the complex geometrical situation. In this study, a simulation code based on BDE is developed and applied to the 1-dimensional transient heat conduction across a thin film and transient 2-dimensional heat conduction across the film with heater. The obtained results are compared to the results of the $Chen^{(1)}$ and Yang and $Chen^{(1)}$. Finally, steady 2-dimensional heat conduction in the quantum dot superlattice are solved to obtain the equivalent thermal conductivity of the lattice and also compared with the experimental data from $Borca-Tasciuc^{(2)}$.

• 한국태양에너지학회 논문집
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• 제39권1호
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• pp.1-9
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• 2019

Light induced degradation is one of the major research challenges of hydrogenated amorphous silicon related thin film silicon solar cells. Amorphous silicon shows creation of metastable defect states, originating from elevated concentration of dangling bonds during light exposure. The metastable defect states work as recombination centers, and mostly affects quality of intrinsic layer in solar cells. In this paper we present results of light induced degradation in thin film silicon solar cells and discussion on physical origin, mechanism and practical solutions of light induced degradation in thin film silicon solar cells. In-situ light-soaking IV measurement techniques are presented. We also present thin film silicon material with silicon nano-quantum dots embedded within amorphous matrix, which shows superior stability during light-soaking. Our results suggest that solar cell using silicon nano-quantum dots in abosrber layer shows superior stability under light soaking, compared to the conventional amorphous silicon solar cell.