• Journal of the Korean Vacuum Society
• /
• v.16 no.4
• /
• pp.273-278
• /
• 2007

For the simulation of active region in the quantum cascade lasers (QCL), we solved Schrodinger equation utilizing Runge-Kutta method and Shotting method. Wavelength, phonon resonant energy, and dipole matrix element were simulated with the variation of active region thickness. As a result of such simulation, it was suggested the tolerance range of epi-layer thickness error when 3-quantum well QCL structures are grown.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2007.05a
• /
• pp.21.2-21.2
• /
• 2007

• Proceedings of the IEEK Conference
• /
• 1999.11a
• /
• pp.917-920
• /
• 1999

Modal transmission-line theory is described for guided electron waves in quantum-well structures. To demonstrate the validity and usefulness of this approach, we evaluate the propagation characteristics and the coupling properties of electron guiding couplers consisting of double quantum-wells (DQWs).

• Proceedings of the Optical Society of Korea Conference
• /
• 2009.02a
• /
• pp.509-510
• /
• 2009

The optical gain of InGaN/GaN multi quantum well (MQW) resonant-cavity light-emitting diode (RC-LED) with different Indium composition and well width in the multi-quantum well was investigated. The optimized optical gain was obtained by simulating active region InGaN/GaN with some test values of well width and Indium composition. By simulation tool, we could simulate on several cases, and then we got exact well width and Indium composition that makes optical gain maximum due to the short wavelength of 470 nm for blue light emission.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.08a
• /
• pp.121-125
• /
• 2003

Time-resolved photoluminescence from InGaN/GaN multi-quantum well structures was investigated for two different shapes of square- and trapezoidal wells grown by metal-organic chemical vapor deposition. To compare to the conventional square well structure with a radiative recombination lifetime of 0.170 nsec, the large value of lifetime of 0.540 nsec from trapezoidal well were found at room temperature. This value is similar to the value for GaN host material indicating no confinement effect of quantum well. Furthermore, the high resolution transmission electron microscopy image provides the In clustering effect in the trapezoidal well structure.

• Transactions on Electrical and Electronic Materials
• /
• v.4 no.5
• /
• pp.19-23
• /
• 2003

Time-resolved photoluminescence from InGaN/GaN multi-quantum well structures was investigated for two different shapes of square-and trapezoidal wells grown by metal-organic chemical vapor deposition. To compare to the conventional square well structure with a radiative recombination lifetime of 0.170 nsec, the large value of lifetime of 0.540 nsec from trapezoidal well were found at room temperature. This value is similar to the value for GaN host material indicating no confinement effect of quantum well. Furthermore, the high resolution transmission electron microscopy image provides the In clustering effect in the trapezoidal well structure.

• Journal of the Semiconductor & Display Technology
• /
• v.3 no.4
• /
• pp.39-43
• /
• 2004

The parallel multi-quantum well structures of blue and amber lights were designed and grown in metal-organic chemical vapor deposition by utilizing integration process on epitaxial layers. Samples were deposited for 5 periods-InGaN multi-quantum well layers for blue light emission and partially etched in order to regrow the 3 periods-InGaN multi-quantum wells for amber light. The blue and amber photoluminescence spectra were observed at the peak wavelengths of 475 and 580 nm, respectively. The chromatic coordinates of the white emitting diode were 0.31 and 0.34.

• Applied Science and Convergence Technology
• /
• v.24 no.6
• /
• pp.257-261
• /
• 2015

We report on GaAs/AlGaAs quantum well infrared photodetectors (QWIPs) that can cover the spectral range of $3.6-25{\mu}m$. One advantage of the GaAs QWIPs is the wavelength tenability as a function of their structural parameters. We have performed a systematic calculation on the detection wavelength of a typical $GaAs/Al_xGa_{1-x}As$ multi-quantum-well photodetector, with the aluminum mole fraction (x) of $Al_xGa_{1-x}As$ barrier in the range of 0.15-0.43 and the quantum-well width range from 30 to 60 $60{\AA}$. Design and fabrication of a QWIP based on $GaAs/Al_{0.23}Ga_{0.77}As$ structure with $37{\AA}$-thick well width has been carried out. The calculated operation wavelength of the QWIP is in a good agreement with the experimental data taken by photo response and activation energy calculation from thermal quenching of integrated photoluminescence.

• Proceedings of the Optical Society of Korea Conference
• /
• 2003.02a
• /
• pp.38-39
• /
• 2003

The GaAs semiconductor whispering gallery modes, produced in the peripheral Rayleigh band region of W／sub Rayleigh／ ＝ (${\Phi}$／2)( 1-n／sub eff／n), exhibit novel properties of ultralow thresholds open to nano-ampere regime associated with photonic quantum ring (PQR) production (Fig 1 (a)). The PQR phenomena are associated with a photonic field-driven phase transition of quantum well(QW)-to-quantum wire (QWR) and hence the photonic (non-de Broglie) quantum corral effects, on the Rayleigh cavity confined carriers in dynamic steady state, occur as schematically shown in Fig 1. (omitted)

• Applied Science and Convergence Technology
• /
• v.26 no.3
• /
• pp.52-54
• /
• 2017

An InGaN/GaN multiple quantum well (MQW) structure is grown on a GaN/sapphire template using a plasma-assisted molecular beam epitaxy (PA-MBE). The fluctuation of the quantum well thickness formed from roughly-grown InGaN layer results in a disordered photoluminescence (PL) spectrum. The surface morphologies of the InGaN layers with various In compositions are investigated by reflection high energy electron diffraction (RHEED) and atomic force microscopy (AFM). A blurred InGaN/GaN hetero-interface and the non-uniform QW size is confirmed by high resolution transmission electron microscopy (HR-TEM). Inhomogeneity of the quantum confinement results in a degradation of the quantum efficiency even though the InGaN layer has a uniform In composition.