• Title/Summary/Keyword: Quantum well

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Strategies to Design Efficient Donor-Acceptor (D-A) Type Emitting Molecules: Molecular Symmetry and Electron Accepting Ability of D-A Type Molecules

  • Hyun Gi Kim;Young-Seok Baek;Sung Soo Kim;Sang Hyun Paek;Young Chul Kim
    • Applied Chemistry for Engineering
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    • v.34 no.6
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    • pp.633-639
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    • 2023
  • We synthesized 2-(10-methyl-10H-phenothiazin-3-yl)-5-phenyl-1,3,4-oxadiazole (MPPO) and 5,5-(10-methyl-10H-phenothiazin-3,7-diyl)-bis-(2-phenyl-1,3,4-oxadiazole) (DPPO). MPPO has both electron-donating and electron-accepting substituents with asymmetric molecular geometry. By incorporating one extra electron-accepting group into MPPO, we created a symmetric molecule, which is DPPO. The optical and electrochemical properties of these compounds were measured. The lowest unoccupied molecular orbital (LUMO) level of DPPO was lower than that of MPPO. The excited-state dipole moment of DPPO, with symmetric geometry, was calculated to be 4.1 Debye, whereas MPPO, with asymmetric geometry, had a value of 7.0 Debye. The charge-carrier mobility of both compounds was similar. We fabricated non-doped organic light-emitting diodes (OLEDs) using D-A type molecules as an emitting layer. The current efficiency of the DPPO-based device was 7.8 cd/A, and the external quantum efficiency was 2.4% at 100 cd/m2, demonstrating significantly improved performance compared to the MPPO-based device. The photophysical and electroluminescence (EL) characteristics of the two D-A type molecules showed that molecular symmetry, as well as the lowered LUMO level of DPPO, played critical roles in the enhancement of EL performance.

Manufacture and Evaluation of Reference Samples for Low Magnetic Moment (저자기 모멘트용 표준시료 제작 및 성능평가)

  • Park, I.W.;Hong, Y.S.;Kim, Y.M.;Yoon, H.;Lee, K.J.;Cho, S.H.
    • Journal of the Korean Magnetics Society
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    • v.18 no.1
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    • pp.1-8
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    • 2008
  • We have manufactured and evaluated reference samples for the use of low magnetic moment measurements. Before the measurements, SQUID magnetometers were magnetically shielded from external magnetic noise. We considered the purity including magnetic impurities, the optimum thickness, the modification method, and the shape in the preparation of the samples. Three paramagnetic polycrystaline metal plates of Ti, W, and Al with the area of $4mm{\times}6mm$ were prepared finally. The magnetic moments of these three samples are measured very linear up to the field of 5 T without magnetic hysteresis. The temperature deviated ratios of the magnetic moments for Ti, Al, and W from 290 K to 310 K are 0.7, 1.5, and 0.1 %, respectively. The measured magnetic moments for Ti and W samples by our research team are very well agreeable with those by two SQUID magnetometers and a VSM at Quantum Design via international round robin test. The results suggest that the prepared reference samples are well suited for the use in the low magnetic moment measurement with SQUID based magnetometers.

Direct Imaging of Polarization-induced Charge Distribution and Domain Switching using TEM

  • O, Sang-Ho
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.08a
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    • pp.99-99
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    • 2013
  • In this talk, I will present two research works in progress, which are: i) mapping of piezoelectric polarization and associated charge density distribution in the heteroepitaxial InGaN/GaN multi-quantum well (MQW) structure of a light emitting diode (LED) by using inline electron holography and ii) in-situ observation of the polarization switching process of an ferroelectric Pb(Zr1-x,Tix)O3 (PZT) thin film capacitor under an applied electric field in transmission electron microscope (TEM). In the first part, I will show that strain as well as total charge density distributions can be mapped quantitatively across all the functional layers constituting a LED, including n-type GaN, InGaN/GaN MQWs, and p-type GaN with sub-nm spatial resolution (~0.8 nm) by using inline electron holography. The experimentally obtained strain maps were verified by comparison with finite element method simulations and confirmed that not only InGaN QWs (2.5 nm in thickness) but also GaN QBs (10 nm in thickness) in the MQW structure are strained complementary to accommodate the lattice misfit strain. Because of this complementary strain of GaN QBs, the strain gradient and also (piezoelectric) polarization gradient across the MQW changes more steeply than expected, resulting in more polarization charge density at the MQW interfaces than the typically expected value from the spontaneous polarization mismatch alone. By quantitative and comparative analysis of the total charge density map with the polarization charge map, we can clarify what extent of the polarization charges are compensated by the electrons supplied from the n-doped GaN QBs. Comparison with the simulated energy band diagrams with various screening parameters show that only 60% of the net polarization charges are compensated by the electrons from the GaN QBs, which results in the internal field of ~2.0 MV cm-1 across each pair of GaN/InGaN of the MQW structure. In the second part of my talk, I will present in-situ observations of the polarization switching process of a planar Ni/PZT/SrRuO3 capacitor using TEM. We observed the preferential, but asymmetric, nucleation and forward growth of switched c-domains at the PZT/electrode interfaces arising from the built-in electric field beneath each interface. The subsequent sideways growth was inhibited by the depolarization field due to the imperfect charge compensation at the counter electrode and preexisting a-domain walls, leading to asymmetric switching. It was found that the preexisting a-domains split into fine a- and c-domains constituting a $90^{\circ}$ stripe domain pattern during the $180^{\circ}$ polarization switching process, revealing that these domains also actively participated in the out-of-plane polarization switching. The real-time observations uncovered the origin of the switching asymmetry and further clarified the importance of charged domain walls and the interfaces with electrodes in the ferroelectric switching processes.

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Imaging Characteristics of Computed Radiography Systems (CR 시스템의 종류와 I.P 크기에 따른 정량적 영상특성평가)

  • Jung, Ji-Young;Park, Hye-Suk;Cho, Hyo-Min;Lee, Chang-Lae;Nam, So-Ra;Lee, Young-Jin;Kim, Hee-Joung
    • Progress in Medical Physics
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    • v.19 no.1
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    • pp.63-72
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    • 2008
  • With recent advancement of the medical imaging systems and picture archiving and communication system (PACS), installation of digital radiography has been accelerated over past few years. Moreover, Computed Radiography (CR) which was well established for the foundation of digital x-ray imaging systems at low cost was widely used for clinical applications. This study analyzes imaging characteristics for two systems with different pixel sizes through the Modulation Transfer Function (MTF), Noise Power Spectrum (NPS) and Detective Quantum Efficiency (DQE). In addition, influence of radiation dose to the imaging characteristics was also measured by quantitative assessment. A standard beam quality RQA5 based on an international electro-technical commission (IEC) standard was used to perform the x-ray imaging studies. For the results, the spatial resolution based on MTF at 10% for Agfa CR system with I.P size of $8{\times}10$ inches and $14{\times}17$ inches was measured as 3.9 cycles/mm and 2.8 cycles/mm, respectively. The spatial resolution based on MTF at 10% for Fuji CR system with I.P size of $8{\times}10$ inches and $14{\times}17$ inches was measured as 3.4 cycles/mm and 3.2 cycles/mm, respectively. There was difference in the spatial resolution for $14{\times}17$ inches, although radiation dose does not effect to the MTF. The NPS of the Agfa CR system shows similar results for different pixel size between $100{\mu}m$ for $8{\times}10$ inch I.P and $150{\mu}m$ for $14{\times}17$ inch I.P. For both systems, the results show better NPS for increased radiation dose due to increasing number of photons. DQE of the Agfa CR system for $8{\times}10$ inch I.P and $14{\times}17$ inch I.P resulted in 11% and 8.8% at 1.5 cycles/mm, respectively. Both systems show that the higher level of radiation dose would lead to the worse DQE efficiency. Measuring DQE for multiple factors of imaging characteristics plays very important role in determining efficiency of equipment and reducing radiation dose for the patients. In conclusion, the results of this study could be used as a baseline to optimize imaging systems and their imaging characteristics by measuring MTF, NPS, and DQE for different level of radiation dose.

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Theoretical Studies of Diels-Alder Reaction (Part II). A New United Ionic-Radical Mechanism of Diels-Alder Reaction (Diels-Alder 反應에 對한 理論的 硏究 (第2報). 新 United Ionic-Radical Mechanism)

  • Byung Kack Park
    • Journal of the Korean Chemical Society
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    • v.17 no.1
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    • pp.1-9
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    • 1973
  • The purpose of this paper is to investigate the mechanism of Diels-Alder reaction by assuming pseudo molecular complex (PMC) which has characters both of ionic and radical bonds. We treated this complex quantum-chemically as an intermediate between the configuration without charge transfer (radical bond character) and the configuration corresponding to the charge transfer from Diene (R) to Dienophile (S) (ionic bond character). The wave function for the complex could be expressed as: ${\psi}_{complex} = {\psi}(R,S) +{ \rho}{\psi}(R^+,S^-)$ where ${\rho}$ is the extent of charge transfer which is a constant to measure the ionic character of PMC. It has been noticed that${\rho}$is related to the difference between Fr + Fr' and Fs + Fs' in free valence (F) when R is united to S through atom r in R to atom s in S and atom r' in R to atom s' in S, That is, ${\rho}{\alpha}$ ${\Delta}F = (Fr + Fr') - (Fs + Fs')$. We have calculated ${\Delta}F$values for more than forty Diels-Alder reactions. The calculated values of ${\Delta}F$ is reversely proportional to the values of Brown's paralocalization energy (Lp) as well as Dewar's differences of delocalization energy$({\Delta}Edeloc.)$ with good linearity. This approach also presents a way of predicting the possibility and the easiness of diene synthesis between any two conjugate compounds. According to the considerations, it could be concluded that Diels-Alder reaction takes place through the united ionic-radical mechanism rather than the separated ionic or radical mechanism.

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In Situ Monitoring of the MBE Growth of AlSb by Spectroscopic Ellipsometry

  • Kim, Jun-Yeong;Yun, Jae-Jin;Lee, Eun-Hye;Bae, Min-Hwan;Song, Jin-Dong;Kim, Yeong-Dong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.342-343
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    • 2013
  • AlSb is a promising material for optical devices, particularly for high-frequency and nonlinear-optical applications. And AlSb offers significant potential for devices such as quantum-well lasers, laser diodes, and heterojunction bipolar transistors. In this work we study molecular beam epitaxy (MBE) growth of an unstrained AISb film on a GaAs substrate and identify the real-time monitoring capabilities of in situ spectroscopic ellipsometry (SE). The samples were fabricated on semi-insulating (0 0 1) GaAs substrates using MBE system. A rotating sample stage ensured uniform film growth. The substrate was first heated to $620^{\circ}C$ under As2 to remove surface oxides. A GaAs buffer layer approximately 200 nm- thick was then grown at $580^{\circ}C$. During the temperature changing process from $580^{\circ}C$ to $530^{\circ}C$, As2 flux is maintained with the shutter for Ga being closed and the reflection high-energy electron diffraction (RHEED) pattern remaining at ($2{\times}4$). Upon reaching the preset temperature of $530^{\circ}C$, As shutter was promptly closed with Sb shutter open, resulting in the change of RHEED pattern from ($2{\times}4$) to ($1{\times}3$). This was followed by the growth of AlSb while using a rotating-compensator SE with a charge-coupled-device (CCD) detector to obtain real-time SE spectra from 0.74 to 6.48 eV. Fig. 1 shows the real time measured SE spectra of AlSb on GaAs in growth process. In the Fig. 1 (a), a change of ellipsometric parameter ${\Delta}$ is observed. The ${\Delta}$ is the parameter which contains thickness information of the sample, and it changes in a periodic from 0 to 180o with growth. The significant change of ${\Delta}$ at~0.4 min means that the growth of AlSb on GaAs has been started. Fig. 1b shows the changes of dielectric function with time over the range 0.74~6.48 eV. These changes mean phase transition from pseudodielectric function of GaAs to AlSb at~0.44 min. Fig. 2 shows the observed RHEED patterns in the growth process. The observed RHEED pattern of GaAs is ($2{\times}4$), and the pattern changes into ($1{\times}3$) with starting the growth of AlSb. This means that the RHEED pattern is in agreement with the result of SE measurements. These data show the importance and sensitivity of SE for real-time monitoring for materials growth by MBE. We performed the real-time monitoring of AlSb growth by using SE measurements, and it is good agreement with the results of RHEED pattern. This fact proves the importance and the sensitivity of SE technique for the real-time monitoring of film growth by using ellipsometry. We believe that these results will be useful in a number of contexts including more accurate optical properties for high speed device engineering.

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Magnetic Properties of Both Ni-W and (Ni-3%W)-Cu Textured Substrates for ReBCO Coated Conductor (고온초전도 박막선재용 Ni-$W_{xat.%}$ 및 (Ni-$W_{3at.%}$)-$CU_{xat.%}$ 이축배향 금속 기판들의 자기적 특성)

  • Song, K.J.;Kim, T.H.;Kim, H.S.;Ko, R.K.;Ha, H.S.;Ha, D.W.;Oh, S.S.;Park, C.;Yoo, S.I.;Joo, J.H.;Kim, M.W.;Kim, C.J.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.11a
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    • pp.28-29
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    • 2006
  • The magnetic properties of a series of both annealed and as-rolled Ni-$W_y$ alloy tapes with compositions y = 0, 1, 3, and 5 at.%, were studied. To compare with Ni-W alloys, the magnetic properties of a series of both annealed and as-rolled $[Ni_{97at.%}W_{3at.%}]_{100-x}Cu_x$ alloy tapes with compositions x = 0, 1, 3, 5 and 7 at.%, were studied, as well. Both the isothermal mass magnetization M(H) of a series of samples, such as both Ni-W and [Ni-W]-Cu alloy tapes, at different fixed temperatures and M(T) in fixed field, were measured using a PPMS-9 (Quantum Design). The degree of ferromagnetism of Ni-$W_y$ alloys have reduced as W-content y increases. Both the saturation magnetization $M_{sat}$ and Curie temperature $T_c$ decrease linearly with W-content y, and both $M_{sat}$ and $T_c$ go to zero at critical concentration of $y_c$ ~ 9.50 at.% W. The effect of Cu addition on both the saturation magnetization $M_sat$ and Curie temperature $T_c$ decrease linearly with Cu-content x in $[Ni_{97at.%}W_{3at.%}]_{100-x}Cu_x$ alloy tapes with compositions x = 0, 1, 3, 5, and 7 at.%. The results confirm that [Ni-W]-Cu alloy tapes can have much reduced ferromagnetism as Cu-content x increases.

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Electro-Optical Characteristics and Analysis of 1×1 mm2 Large-Area InGaN/GaN Green LED (1×1 mm2 대면적 녹색 LED의 전기 광학적 특성 분석)

  • Jang, L.W.;Jo, D.S.;Jeon, J.W.;Ahn, Tae-Young;Park, M.J.;Ahn, B.J.;Song, J.H.;Kwak, J.S.;Kim, Jin-Soo;Lee, I.H.;Ahn, H.K.
    • Journal of the Korean Vacuum Society
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    • v.20 no.4
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    • pp.288-293
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    • 2011
  • We investigated the effects of piezoelectric field on the electro-absorption characteristics in InGaN/GaN multiple-quantum well (MQW) green light emitting diodes (LED). Double crystal X-ray diffraction measurement was performed to study the crystalline property and indium (In) composition in the MQW active layer. To measure the electro-luminescence and electro-reflectance (ER) spectroscopy, we fabricated the $1{\times}1\;mm^2$ large-area green LED chip. The piezoelectric field inside the LED structure was evaluated from the Vcomp in active layer by the ER spectra. Finally, we analyzed the electro-absorption characteristics of the green LED by using the photo-current spectroscopy.

Optical thyristor operating at 1.55 μm (장파장에서 동작하는 Optical Thyristor)

  • Kim, Doo-Gun;Kim, Hyung-Soo;Jung, Sung-Jae;Choi, Young-Wan;Lee, Seok;Woo, Deok-Ha;Jhon, Young-Min;Yu, Byung-Geel
    • Korean Journal of Optics and Photonics
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    • v.13 no.2
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    • pp.146-150
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    • 2002
  • 1.55${\mu}{\textrm}{m}$ PnpN optical thyristor as a smart optical switch has potential applications in advanced optical communication systems. PnpP optical thyristors operating at 1.55${\mu}{\textrm}{m}$ are proposed and fabricated for the first time. In the optical thyristors, we employ InGaAs/InP multiple quantum well (MQW) for the active n- and p-layers. The thyristors show sufficiently nonlinear s-shape I-V characteristics and spontaneous emission. In the OFF-state, the device has a high-impedance up to switching voltage of 4.03(V). On the other hand, it has low-impedance and emits spontaneous light as a light-emitting diode in the ON-state voltage of 1.77(V), and switching voltage is changed under several light input conditions. It can be used as a header processor in optical asynchronous transfer mode (ATM), as a hard limiter in optical code division multiple access (CDMA) and as a wavelength converter in optical WDM systems.

Magnetic Anisotropy Behavior in Antiparallely Coupled NiFe/Ru/NiFe Films (반자성으로 커플링된 NiFe/Ru/NiFe 박막에서의 자기이방성의 변화)

  • Song, Oh-Sung;Jung, Young-Soon;Lee, Ki-Yung
    • Journal of the Korean Magnetics Society
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    • v.13 no.3
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    • pp.97-102
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    • 2003
  • Synthetic ferrimagnetic layer (SyFL) with structure NiFe/Ru/NiFe which can be applied high density TMR device in free layer were prepared by an inductively coupled plasma (ICP) helicon-sputter. We proposed a model of predicting coercivity (H$\_$c/), spin-flopping field (H$\_$sf/), and saturation field (H$\_$s/) as a function of Ru thicknesses, from the equilibrium state of energies of Zeeman, exchange, and uniaxial anisotropy. We fabricated the samples of Ta(50 ${\AA}$)/NiFe(50${\AA}$)nu(4∼20${\AA}$)NiFe(30 ${\AA}$)/Ta(50${\AA}$), and measured the M-H loops with a superconduction quantum interference device (SQUID) applying the external field up to ${\pm}$ 15 kOe. The result was well agreed with the proposed model, and reveal K$\_$u = 1000 erg/㎤, J$\_$ex/ =0.7 erg/$\textrm{cm}^2$. We report that H$\_$c/ below 10 Oe is available, and R$\_$u/ thickness range should be in 4-10 ${\AA}$ for MRAM application. Our result implies that permalloy layers may lead to considerable magnetostriction effect in SyFL and intermixing in NiFe/Ru interfaces.