• The Journal of Korean Institute of Communications and Information Sciences
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• v.32 no.1A
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• pp.91-100
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• 2007

This paper presents the RF Shower System for increased read range on low power mobile RFID System with 20watts of power supply. From the experiment, by controlling the output power of shower system, the tripled read range between reader and Tag is possibly discovered. Thus we can expect on the significantly widen read range of RFID system by appropriate control of Shower Zone, though we only with the reader with its lower output power level of 20dBm.

• The Transactions of the Korean Institute of Electrical Engineers D
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• v.55 no.12
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• pp.526-533
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• 2006

In this paper, we presented the synchronization module between RF shower system and RFID Reader to extend interrogating range on Mobile RFID system, Costas Loop and FPLL(Frequency/phase Lock Loop) were used. We achieved compromised range of 3MHz locking frequency, 1ms locking time and figured out remarkable Hopping frequency of the Reader. The prototype of the new designed RFID system has been tested with ISO18000-6 type-B Tag. The read range between designed RFID Reader and Tag has been measured, it increased triple times by adjusting the Shower system output level.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.5
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• pp.106-112
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• 1994

We have developed a large area ion shower doping system with an RF plasma ion source. The ion current density (i.e., doping concentration) increases with RF power and acceleration voltage. Using this technique, we investigated the optimum condition for ion doping of phosphorus in a-Si:H and poly-Si films. The optimum acceleration voltage and doping time are 6KV and 90sec, respectively, in a-Si:H films. Under this condition the electrical conductivity of ion-doped a-Si:H film is obtained ~10$^{-3}$/cm at room temperature. The sheet resistance decreases witnh acceleration voltage in ion-doped poly-Si, and a heavily-doped layer with a sheet resistance of 920$\Omega$/ㅁ is obtained by using ion doping and subsequent activation.

• Journal of Sensor Science and Technology
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• v.20 no.3
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• pp.207-212
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• 2011

In this study, pyramid structured black silicon process was developed in order to overcome disadvantages of using wet etching to texture the surface of single crystalline silicon and using grass/needle-like black silicon structure. In order to form the pyramidal black silicon structure on the silicon surface, the RIE system was modified to equip with metal-mesh on the top of head shower. The process conditions were : $SF_6/O_2$ gas flow 15/15 sccm, RF power of 200 W, pressure at 50 mTorr ~ 200 mTorr, and temperature at $5^{\circ}C$. The pressure did not affect the pyramid structure significantly. Increasing processing time increased the size of the pyramid, however, the size remained constant at 1 ${\mu}M$ ~ 2 ${\mu}M$ between 15 minutes ~ 20 minutes of processing. Pyramid structure of 1 ${\mu}M$ in size showed to have the lowest reflectivity of 7 % ~ 10 %. Also, the pyramid structure black silicon is more appropriate than the grass/needle-like black silicon when creating solar cells.