• Journal of the Korean Crystal Growth and Crystal Technology
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• v.25 no.1
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• pp.6-12
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• 2015

Under rate-controlled sintering, furnace power is controlled to maintain a specific specimen contraction rate. This thermal processing method guarantees continuous process with a minimum thermal energy applied over time and makes it possible to control the density of the sintered body precisely. In this study, the rate-controlled sintering is applied to the sintering of $B_4C$ in order to investigate how rate-controlled sintering variables can affect the sintering behavior and/or grain growth behavior of $B_4C$ and how the results can be interpreted using sintering theories to draw an optimal sintering condition of the rate-controlled sintering. Further, the applicability of the rate-controlled sintering into the study for sintering of unknown materials is also considered.

• Journal of Powder Materials
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• v.23 no.1
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• pp.1-7
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• 2016

Cu-Mn compacts are fabricated by the pulsed current activated sintering method (PCAS) for sputtering target application. For fabricating the compacts, optimized sintering conditions such as the temperature, pulse ratio, pressure, and heating rate are controlled during the sintering process. The final sintering temperature and heating rate required to fabricate the target materials having high density are $700^{\circ}C$ and $80^{\circ}C/min$, respectively. The heating directly progresses up to $700^{\circ}C$ with a 3 min holding time. The sputtering target materials having high relative density of 100% are fabricated by employing a uniaxial pressure of 60 MPa and a sintering temperature of $700^{\circ}C$ without any significant change in the grain size. Also, the shrinkage displacement of the Cu-Mn target materials considerably increases with an increase in the pressure at sintering temperatures up to $700^{\circ}C$.

• Transactions on Electrical and Electronic Materials
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• v.13 no.4
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• pp.181-184
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• 2012

$BaTiO_3$ based multilayer ceramic capacitors with Ni electrodes can be explained as 2-2 composites with different thermal expansion coefficient and sintering behaviors. To achieve the high capacitance and reliability of MLCCs, a homogenous Ni electrode configuration with high connectivity is required. We controlled the heating rates during sintering to achieve densification by suppressing grain growth. Experimental results revealed that a large heating rate gave high connectivity of Ni electrode, high capacitance, small dissipation factor, high breakdown voltage, and high reliability of MLCC chips.

• Journal of the Korean Ceramic Society
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• v.36 no.6
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• pp.655-661
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• 1999

${\beta}$-SiC formation mechanism in Si melt-C-SiC system with varying in size of carbon source was investigated. A continuous reaction sintering process using Si melt infiltration method was adopted to control the reaction sintering time effectively. It was found that ${\beta}$-SiC formation mechanism in Si melt-C-SiC system was directly affected by the size of carbon source. In the Si melt-C-SiC system with large carbon source ${\beta}$-SiC formation mechanism could be divided into two stages depending on the reaction sintering time: in early stage of reaction sintering carbon dissolution in Si melt and precipitation of ${\beta}$-SiC was occurred preferentially and then SIC nucleation and growth was controlled by diffusion of carbon throughy the ${\beta}$-SiC layer formed on graphite particle. Furthmore a dissolution rate of graphite particles in Si melt could be accelerated by the infiltration of Si melt through basal plane of graphite crystalline.

• Korean Journal of Metals and Materials
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• v.49 no.11
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• pp.845-852
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• 2011

The Spark Plasma Sintering(SPS) method offers a means of fabricating a sintered-body having high density without grain growth through short sintering time and a one-step process. A titanium compact having high density and purity was fabricated by the SPS process. It can be used to fabricate a Ti sputtering target with controlled parameters such as sintering temperature, heating rate, and pressure to establish the optimized processing conditions. The compact/target(?) has a diameter of ${\Phi}150{\times}6.35mm$. The density, purity, phase transformation, and microstructure of the Ti compact were analyzed by Archimedes, ICP, XRD and FE-SEM. A Ti thin-film fabricated on a $Si/SiO_2$ substrate by a sputtering device (SRN-100) was analyzed by XRD, TEM, and SIMS. Density and grain size were up to 99% and below $40{\mu}m$, respectively. The specific resistivity of the optimized Ti target was $8.63{\times}10^{-6}{\Omega}{\cdot}cm$.

• Journal of the Korean Ceramic Society
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• v.31 no.10
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• pp.1209-1217
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• 1994

Monodispersed alumina-zirconia fine powders were prepared by controlled hydrolysis of alkoxides. These powders and the sintered bodies were characterized. Aluminium alkoxide and zirconium alkoxide were dissolved into complex solvent with butanol and n-propanol, and by acetonitrile added hydrolytic solution, hydrolysis rate was controlled. The oil, as a dispersant, was added in hydrolytic solution, and then prepared powders were nano-sized and well-monodispersed. In the case of hydroxypropyl celluose (HPC) as a dispersant, it was added in complex solution with butanol and iso-propanol, sub-micrometer sized and well-monodispersed powders could be prepared. The value of relative density (R.D.) and tetragonal phase fraction of zirconia in the sintered body made by nano-meter sized powders were respectively higher than those in the case of sub-micrometer sized one.

• Journal of the Korean Ceramic Society
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• v.35 no.7
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• pp.749-756
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• 1998

TiC-Ni and TiC-Ni-Mo cermet powders were produced by Self-propagating High temperature Synthesis (SHS) process. The cooling rate of synthesized powders were controlled by using the V-shaped copper jig and the carbide size decreased with increasing the cooling rate I. e decreasing the width of copper jig Round shape carbide particles were produced after SHS reaction in TiC-Ni as well as TiC-Ni-Mo powders. Local segregation of Mo rich phases was observed in SHS powder of TiC-Ni-Mo and the uneven dis-triobution of Mo promoted the faster growth rate of carbide particles during sintering compared to the same composition specimen with commercial TiC powder. Howogeneous microstructure of TiC-Ni-Mo cermet was obtained when the elemental Mo powder was mixed with the SHS powder of TiC-Ni.

• KOREAN JOURNAL OF PACKAGING SCIENCE & TECHNOLOGY
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• v.9 no.1
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• pp.11-18
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• 2003

The pure $TiO_2$ particles have been prepared in vapor-phase hydrolysis of titanium tetraisopropoxide(TTIP). The rate of TTIP hydrolysis was so fast that the overall rate of formation of $TiO_2$ was controlled by the rate of mixing of TTIP and $H_2O$. Thus, the primary $TiO_2$ particles were prepared in nano sizes to form chainlike aggregates due to rapid coagulation. The pure $TiO_2$ particles as prepared were amorphous at the reactor set temperatures below $400^{\circ}C$ and became anatase at the temperatures of $450^{\circ}C$ above while the weak rutile peaks were also observed above $800^{\circ}C$. The actual size of primary particles as prepared were reduced by increasing the reactor set temperature while their crystalline sizes as well as BET sizes increased by post-sintering.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.5 no.2
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• pp.122-128
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• 1995

Sintered bodies were prepared from ${\alpha} - Al_2O_3/SiO_2$ composite powders which each alumina particles were surrounded by silica particles and investigated the mullitization behavior on the process of reaction - sintering. Mullitized reaction was started by formation of amorphous aluminosilicate inter - layer and proceeded by diffusion of alumina through this inter-layer. The growth of mullite was happened along the surface of alumina and controlled by the rate of diffusion.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.23 no.11
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• pp.1379-1389
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• 1999

A new technique for control of size and shape of flame-made particles is Introduced. The characteristic sintering time can be controlled Independently of collision time by heating the particles with irradiation of laser because the sintering time strongly depends on temperature. A coflow oxy-hydrogen diffusion flame burner was used for $SiCl_4$ conversion to silica particle. Nanometer sized aggregates irradiated by a high power CW $CO_2$ laser beam were rapidly heated up to high temperatures and then were sintered to approach volume-equivalent spheres. The sphere collides much slower than the aggregate, which results in reduction of sizes of particles maintaining spherical shape. Light scattering of Ar ion laser and TEM observation using a local sampling device were used to confirm the above effects. When the $CO_2$ laser was irradiated at low position from the burner surface, particle generation due to gas absorption of laser beam occurred and thus scattering intensity increased with $CO_2$ laser power. At high irradiation position, scattering intensity decreased with $CO_2$ laser power and TEM image showed a clear mark of evaporation and recondensation of particles for high $CO_2$ laser power. When the laser was irradiated between the above two positions where small aggregates exist, average size of spherical particles obviously decreased to 58% of those without $CO_2$ laser irradiation with the spherical shape. Even for increased carrier gas flow rate by a factor of three, TEM photograph also revealed considerable reduction of particle size.