• Korean Journal of Materials Research
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• v.34 no.2
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• pp.79-84
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• 2024

Thin films of yttria-stabilized zirconia (YSZ) nanoparticles were prepared using a low-temperature deposition and crystallization process involving successive ionic layer adsorption and reaction (SILAR) or SILAR-Air spray Plus (SILAR-A+) methods, coupled with hydrothermal (175 ℃) and furnace (500 ℃) post-annealing. The annealed YSZ films resulted in crystalline products, and their phases of monoclinic, tetragonal, and cubic were categorized through X-ray diffraction analysis. The morphologies of the as-prepared films, fabricated by SILAR and SILAR-A+ processes, including hydrothermal dehydration and annealing, were characterized by the degree of surface cracking using scanning electron microscopy images. Additionally, the thicknesses of the YSZ thin films were compared by removing diffusion layers such as spectator anions and water accumulated during the air spray plus process. Crack-free YSZ thin films were successfully fabricated on glass substrates using the SILAR-A+ method, followed by hydrothermal and furnace annealing, making them suitable for application in solid oxide fuel cells.

• Journal of Welding and Joining
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• v.15 no.3
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• pp.128-135
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• 1997

Reaction diffusion and formation of $Ni_3Al$phase with $L1_2$ structure have been studied in temperature range of 1432K to 1573K using the diffusion couple of (Ni-40, 5at%Al)/(Ni-14, 1at%Al) and (Ni-49, 2at%Al)/ (Nickel). The layer growth of Ni$_{3}$Al pyhase in the annealed diffusion couple was measured by optical microscope and electron probe microanalyzer (EPMA). The layer growth of $Ni_3Al$phase in diffusion zone obeyed the parabolic law without any indication of grain boundary effects. The layer growth of $Ni_3Al$phase in temperature range of 1423K to 1573K was mainly controlled by the volume diffusion mechanism. The rate of layer growth of $Ni_3Al$phase was found to be colsely related to the composition of intermetallic compound NiAl phase. The activation energy for layer growth of $Ni_3Al$phase was calculated to be 127kJ/mol.

• Journal of the Korean Ceramic Society
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• v.36 no.1
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• pp.21-29
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• 1999

The effects of density and pore size distribution of substrate in preparing SiC conversiton layer on graphite substrate were investigated. The chemical reaction for formation of SiC conversion layer was occurred at substrate surface or below surface through SiC gas infiltration. It was supposed that the pore size distribution required for the sufficient SiO gas infiltration and the continuous chemical reaction during conversion process was in the range of 1.0∼10.0$\mu\textrm{m}$. In the stress analysis of SiC layer with finite element method (FEM), the residual stress distribution due to thermal mismatch was shown. However, the compressive stress was measured in SiC layer by X-ray diffraction, it was presumed that the residual stress distribution of SiC layer was mainly influenced by the constraining effect of interlayer between SiC layer and graphite substrate, and the densification behaviro and the grain growth in SiC conversion layer.

• Journal of the Korean Ceramic Society
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• v.54 no.5
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• pp.443-447
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• 2017

The initial reaction of hexachlorodisilane ($Si_2Cl_6$, HCDS) on amorphous silica ($SiO_2$) surface for atomic layer deposition was investigated using density functional theory. Two representative reaction sites on the amorphous $SiO_2$ surface for HCDS reaction, a surface hydroxyl and a two-membered ring, were considered. The reaction energy barrier for HCDS on both sites was higher than its adsorption energy, indicating that it would desorb from the surface rather than react with the surface. At high temperature range, some HCDSs can have kinetic energy high enough to overcome the reaction energy barrier. The HCDS reaction on top of the reacted HCDS was investigated to confirm its self-limiting characteristics.

• Proceedings of the Korea Concrete Institute Conference
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• 2002.10a
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• pp.805-808
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• 2002

This study is designed to reduction of hydration heat of 4 layer division-placed mass concrete considering the difference of setting time of super retarding agent. According to the results, peak temperature of plain concrete by hydration heat show $63^{\circ}C$ around the age of 1 days. Hydration heat is lowest in the bottom layer, and highest in the middle of 3rd layer from the bottom. Hydration heat of mock up structure, which is division-placed at the same interval of 1 and 2 days by setting time difference of super retarding agent, is highest in the bottom layer because after peak temperature of 4th layer, hydration reaction progresses in order of 3rd, 2nd and 1st layer. But in mock up structure which is division-placed at the various interval. peak temperature by hydration heat is reduced by about $13^{\circ}C$, compared with plain concrete because after first peak hydration heat of 4th layer (plain concrete), hydration reaction progresses after the drop of hydration heat in order of 3rd, 2nd and 1st layer.

• Journal of the Microelectronics and Packaging Society
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• v.17 no.1
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• pp.1-7
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• 2010

Interfacial reaction characteristics of a Bi-10Cu-20Sb-0.3Ni Pb-free alloy on Cu pad was investigated by reflow soldering at $430^{\circ}C$. The thickness of interfacial reaction layers with respect to the soldering time was also measured. After the reflow soldering, it was observed that a $(Cu,Ni)_2Sb$, a $Cu_4Sb$ intermetallic layer, and a haze layer, which is consisted of Bi and $Cu_4Sb$ phases, were successively formed at the Bi-10Cu-20Sb-0.3Ni/Cu interface. The total thickness of the reaction layers was found to be linearly increased with increasing of the reflow soldering time up to 120 s. As the added Ni element did not participate in the formation of the thickest $Cu_4Sb$ interfacial layer, suppression of the interfacial growth was not observed.

• Journal of the Korean Ceramic Society
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• v.44 no.8
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• pp.445-450
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• 2007

A conversion layer of SiC was fabricated on the graphite substrate by a chemical vapor reaction method in order to enhance the oxidation resistance of graphite. The effect of boron carbide containing powder bed on the morphology of SiC conversion layer was investigated during the chemical vapor reaction of graphite with the reactive silicon-source at $1650^{\circ}C\;and\;1700^{\circ}C$ for 1 h. The presence of boron species enhanced the conversion of graphite into SiC, and altered the morphology of the conversion layer significantly as well. A continuous and thick SiC conversion layer was formed only when the boron source was used with the other silicon compounds. The boron is deemed to increase the diffusion of SiOx in SiC/C system.

• Journal of Korea Foundry Society
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• v.29 no.4
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• pp.169-175
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• 2009

Effect of iron and manganese contents on die soldering reaction has been studied in Al-9wt.%Si-0.3wt.%Mg alloy. Ternary ${\alpha}_{hcp}-Al_8Fe_2Si$ and ${\alpha}_{bcc}-Al_8Fe_2Si$ intermetallic compounds formed by interaction diffusion between Al-Si-Mg system alloy melt and SKD61 die steel surface. Thickness of soldering reaction layer in die steel surface decreased as Fe and Mn contents of the melts increased : When Fe content of Al-9wt.%Si-0.3wt.%Mg melts at constant 0.5wt%Mn content was 0.15wt.%, 0.45wt.% and 0.6wt.%, thickness of soldered layer of each alloy was $64.5{\mu}m,\;57.3{\mu}m$ and $46.9{\mu}m$ respectively. For Mn content of the alloy melts at constant 0.45wt.%Fe content was 0.30wt.%, 0.50wt.% and 0.70wt.%, thickness of soldered layer of each alloy was $66.1{\mu}m,\;57.3{\mu}m$ and $48.3{\mu}m$ respectively.

• Corrosion Science and Technology
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• v.7 no.1
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• pp.40-44
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• 2008

Passive metal forms an interfacial diffuse layer on the surface of passive film by its reaction with $H^+$ or $OH^-$ ions in solution depending on solution pH. There is a critical pH, called pH point of iso-selectivity ($pH_{pis}$) at which the nature of the diffuse layer is changed from the anion-permeable at pH<$pH_{pis}$ to the cation-permeable at pH>$pH_{pis}$. The $pH_{pis}$ for a passivated Fe was determined by examining the effects of pH on the thickness of passive film and on the dissolution reaction occurring on the passive film under a gavanostatic reduction in borate-phosphate buffer solutions at various pH of 7~11. The steady-state thickness of passive film formed on Fe showed the maximum at pH 8.5~9, and further the nature of film dissolution reaction was changed from a reaction producing $Fe^{3+}$ ion at $pH\leq8.5$ to that producing $FeO_2{^-}$ at $pH\geq9$, suggesting that the $pH_{pis}$ of Fe is about pH 8.5~9. In addition, the passive film formed at pH 8.5~9, $pH_{pis}$, was found to be the most protective with the lowest defect density as confirmed by the Mott-Schottky analysis. Pitting potential was decreased with increasing $Cl^-$ concentration at $pH\leq8.5$ due probably to the formation of anion permeable diffuse layer, but it was almost constant at $pH\geq9$ irrespective of $Cl^-$ concentration due primarily to the formation of cation permeable diffuse layer on the film, confirming again that $pH_{pis}$ of Fe is 8.5~9.

• Transactions of Materials Processing
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• v.7 no.5
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• pp.465-473
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• 1998

The effect of alloying elements of Ag-Cu-Zr-X brazing alloy on the microstructure and the bond strength of $Al_2O_3/Ni-Cr$ brazed steel joint was investigated. The reaction layer, $ZrO_2$ (a=5.146 ${\AA}$ , b=5.213 ${\AA}$ , c=5.311 ${\AA}$ )was formed at the interface of $Al_2O_3/Ni-Cr$ steel joint by the redox reaction between alumina and Zr. The addition of An and Al to the Ag-Cu-Zr brazing alloy gave rise to changes in the thickness of the reaction product layer and the morphology of the brazement. Sn caused the segregation of Zr was decreased b Al the $ZrO_2$ layer formed at the Ag-Cu-Zr-Al alloy was thinner than that of $ZrO_2$ formed at the Ag-Cu-Zr-An alloy. The fracture shear strength was strongly dependent on the microstructure of the brazement. Brazing with Ag-Cu-Zr-Sn alloy resulted in a better bond strength than with Ag-Cu-Zr or Ag-Cu-Zr-Al alloy.