• Journal of Sensor Science and Technology
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• v.28 no.2
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• pp.121-126
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• 2019

The voltage-controlled oscillator is one of the fundamental building blocks that determine the signal quality and power consumption in RF transceivers for wireless sensor networks. Ring oscillators are attractive owing to their small form factor and multi-phase capability despite the relatively poor phase noise performance in comparison with LC oscillators. The phase noise of a ring oscillator can be improved by using a coupled structure that works at a lower frequency. This paper introduces a 2.4 GHz low-noise ring oscillator that consists of two 3-stage coupled ring oscillators. Each sub-oscillator operates at 800 MHz, and the multi-phase signals are combined to generate a 2.4 GHz quadrature output. The voltage-controlled ring oscillator designed in a 65-nm standard CMOS technology has a tuning range of 800 MHz and exhibits the phase noise of -104 dBc/Hz at 1 MHz offset. The power consumption is 13.3 mW from a 1.2 V supply voltage.

• Journal of information and communication convergence engineering
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• v.3 no.4
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• pp.184-186
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• 2005

The effect of power supply noise on the phase noise of a ring oscillator is studied. The power supply noise source in series with DC power supply voltage is applied to a 3 stage CMOS ring oscillator. The phase noise due to the power supply noise is modeled by the narrow band phase modulation. The model is verified by the fact that the spectrum of output of ring oscillator has two side bands at the frequencies offset from the frequency of the ring oscillator by the frequency of the power supply noise source. Simulations at several different frequency of the power supply noise reveals that the ring oscillator acts as a low pass filter to the power supply noise. This study, as a result, shows that the phase noise generated by the power supply noise is inversely proportional to the frequency offset from the carrier frequency.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.9
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• pp.2081-2086
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• 2015

The temperature sensor using ring oscillator is designed by 0.18㎛ CMOS process and the supply voltage is 1.5volts. The temperature sensor is designed by using temperature-independent and temperature-dependent ring oscillators and the output frequency of temperature-independent ring oscillator is constant with temperature and the output frequency of temperature-dependent ring oscillator decreases with increasing temperature. To convert the temperature to a digital value the output signal of temperature-independent ring oscillator is used for the clock signal and the output signal of temperature-dependent ring oscillator is used for the enable signal of counter. From HSPICE simulation results, the temperature error is less than form -0.7℃ to 1.0℃ when the operating temperature is varied from -20℃ to 70℃.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2004.05b
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• pp.682-684
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• 2004

The effect of 1/f noise by the random telegraph signal(RTS) on the phase noise and the jitter of CMOS ring Oscillator is investigated. 10 parallel piece-wise-linear current sources connected to each node model the RTS signals. The In, the power spectral density and the jitter of output of the ring oscillator are simulated as functions of the amplitude and time constant of RTS current source. It is confirmed that the increase of amplitude of RTS is directly related to the increase of the width of phase noise md the value of jitter. The shorter the time constant is, the wider width of FET peak and the larger value of cycle to cycle jitter are.

• Journal of electromagnetic engineering and science
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• v.5 no.2
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• pp.92-96
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• 2005

This paper presents a novel microwave oscillator incorporating a simple microstrip ring type resonant cell as its terminating resonance component. Reduced chip size, higher dc-ac power efficiency, superior harmonic characteristics can be achieved from the introduction of a compact microstrip ring resonator cell. The oscillator provides a second harmonic suppression of 26.51 dB and the output power of 2.046 dBm at 2.11 GHz.

• Proceedings of the IEEK Conference
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• 1998.06a
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• pp.851-854
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• 1998

본 연구는 ring oscillator 및 이의 delay까지도 계수화 함으롯 고정밀 pulse modulation 을 시키기 위한 것이다. 특히 ring oscillator는 온ㄷ, 전압 및 공정에 따라 주파수 변화폭이 심하므로 이에대한 보정 방법과 높은 발진으로 인해 실리콘(반도체) 제작시의 열문제를 최소화 하는 방안에 대해서도 언급하였다. 본 논문은 삼성반도체 0.6um CMOS standar cell을 사용하여 구현 했으며, 레이져 프린터의 해상도 향상을 위해 gray image와 text에 대한 적용 예로서 화상의 미세수평이도오가 화소의 크기를 제어하는 예를 보였다. 또한 향후에는 칼라 프린터에 있어서 인쇄화상의 품질 향상을 위한 정밀 보정에도 응용할수 있음을 보였다.

• Journal of Korea Society of Digital Industry and Information Management
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• v.19 no.2
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• pp.11-25
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• 2023

With the increasing advancement of VLSI technology, health care system is also developing to serve the humanity with better care. Therefore, biomedical implantable devices are one of the amazing important invention of scientist to collect data from the body cell for the diagnosis of diseases without any pain. This Biomedical implantable transceiver circuit has several important issues. Oscillator is one of them. For the design flexibility and complete transistor-based architecture ring oscillator is favorite to the oscillator circuit designer. This paper represents the design and analysis of the a 9-stage CMOS ring oscillator using cadence virtuoso tool in 180nm technology. It is also designed to generate the carrier signal of 403.5MHz frequency. Ring oscillator comprises of odd number of stages with a feedback circuit forming a closed loop. This circuit was designed with 9-stages of delay inverter and simulated for various parameters such as delay, phase noise or jitter and power consumption. The average power consumption for this oscillator is 9.32㎼ and average phase noise is only -86 dBc/Hz with the source voltage of 0.8827V.

• Journal of Sensor Science and Technology
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• v.14 no.1
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• pp.42-46
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• 2005

It has been known that 1/f noise of MOSFET is generated by superposition of random telelgraph signals (RTS). In this study, jitters and phase noise caused by 1/f noise of MOSFET are analysed with RTS supplied to all of the nodes of the CMOS ring oscillator under investigation. Through the analysis of jitters and jitter ratios with varying values of the amplitude of RTS, it is found that the jitters and the jitter ratios are proportional to the amplitude of RTS. And the analysis of FFT of the output of the ring oscillator reveals that the jitters are closely related to the phase noise of the high order harmonics of the ring oscillator outputs.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.2
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• pp.273-279
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• 2013

In this paper, a novel split ring resonator is proposed for improvement of phase noise characteristics that is weak point of oscillator using planar type microstrip line resonator, and oscillator for 5.8GHz band is designed using proposed split ring resonator. At the fundamental frequency of 5.8GHz, 7.22dBm output power and -83.5 dBc@100kHz phase noise have been measured for oscillator with split ring resonator. The phase noise characteristics of oscillator is improved about 9.7dB compared to one using the general ${\lambda}$/4 microstrip resonator. Because it is possible that varactor diode or lumped capacitor is placed on the gaps of split ring resonator, resonant frequency can be controlled by bias voltage. We can design voltage controlled oscillator using proposed split ring resonator. Thus, due to its simple fabrication process and planar type, it is expected that the technique in this paper can be widely used for low phase noise oscillators for both MIC and MMIC applications.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.8
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• pp.1581-1586
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• 2012

In this paper, a novel resonator using ring type DGS is proposed for improvement of phase noise characteristics that is weak point of oscillator using planar type microstrip line resonator, and oscillator for 5.8GHz band is designed using proposed DGS resonator. The ring type DGS resonator is composed of DGS cell etched on ground plane under $50{\Omega}$ microstrip line. At the fundamental frequency of 5.8GHz, 7.6dBm output power and -82.7 dBc@100kHz phase noise have been measured for oscillator with ring type DGS resonator. The phase noise characteristics of oscillator is improved about 9.5dB compared to one using the general ${\lambda}/4$ microstrip resonator. Because it is possible that varactor diode or lumped capacitor is placed on the gaps of ring type DGS, resonant frequency can be controlled by bias voltage. We can design voltage controlled oscillator using proposed ring type DGS resonator. Thus, due to its simple fabrication process and planar type, it is expected that the technique in this paper can be widely used for low phase noise oscillators for both MIC and MMIC applications.