• Title/Summary/Keyword: SLS crystallization

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LTPS (Low Temperature Poly Si) Technology Based on SLS (Sequential Lateral Solidification) Crystallization for Advanced Mobile Display

  • Kang, Myung-Koo;Kim, Hyun-Jae;Kim, Chi-Woo;Kim, Hyung-Guel
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.1756-1760
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    • 2006
  • LTPS technology based on SLS Crystallization was intensively reviewed. LTPS structure produced by SLS crystallization is composed of much larger grains compared with conventional ELA crystallization structure, which can give higher TFT performances. However, TFT performance uniformity and anisotropy problem should be solved for it to be used in mass production. TFT performance uniformity was from main grain boundary position and could be solved by equal defect area structure $(EDAS^{TM})$. TFT performance anisotropy could be also solved by multi-channel (MC) structure that can make parallel component in perpendicular channel direction. The higher TFT performances from SLS technology can make superior optical and/or electrical properties and has been adopted in mass production successfully.

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The Effect of Crystallization of SLS Glass for Bulletproof Materials (방탄소재 활용을 위한 SLS 유리 결정화의 효과)

  • Shim, Gyu-In;Kim, Tae-Yoon;Choi, Se-Young
    • Journal of the Korea Institute of Military Science and Technology
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    • v.13 no.1
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    • pp.120-125
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    • 2010
  • For application of transparent bulletproof materials, the SLS(soda-lime-silicate) glass was heated by 2-step crystallization. The DTA curve for SLS glass revealed the nucleation and crystal growth temperature at about $575^{\circ}C$ and $675^{\circ}C$, respectively. The crystallized glass was heated at various conditions(temperature, time). As a result, the maximum nucleation and crystal growth rates were $3.8\times10^5/mm^3{\cdot}hr$ at $575^{\circ}C$ and 20.58nm/min at $680^{\circ}C$, respectively. The bending strength, fracture toughness and vickers hardness were 451.7MPa, $0.9388MPa{\cdot}m^{1/2}$, and $693.9H_v$ which were 201%, 31%, and 22% higher than parent glass, respectively. Surface image and transmittance of crystallized SLS glass were analyzed by optical microscopy and UV/VIS/NIR spectrophotometer. Transmittance of crystallized SLS glass at visible-range(200~800nm) was not changed.

SLS (Sequential Lateral Solidification) Technology for High End Mobile Applications

  • Kang, Myung-Koo;Kim, Hyun-Jae;Kim, ChiWoo;Kim, Hyung-Guel
    • 한국정보디스플레이학회:학술대회논문집
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    • 2007.08a
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    • pp.8-11
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    • 2007
  • The new technologies in mobile display developed in SEC are briefly reviewed. For a differentiation, SEC's LTPS line is based on SLS (Sequential Lateral Solidification) technology. In this paper, the characteristics of SEC's SLS in recent and future mobile displays were discussed. The microstructure produced by SLS crystallization is dependent on SLS process conditions such as mask design, laser energy density, and pulse duration time. The microstructure and TFT (Thin Film Transistor) performance are closely related. For an optimization of TFT performance, SLS process condition should be adjusted. Other fabrication processes except crystallization such as blocking layer, gate insulator deposition and cleaning also affect TFT performance. Optimized process condition and tailoring mask design can make it possible to produce high quality AMOLED devices. The TFT non-uniformity caused by laser energy density fluctuation could be successfully diminished by mixing technology.

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Device Design Considerations and Uniformity Improvement for Low-Temperature Poly-Si TFTs Fabricated by Sequential Lateral Solidification Technology

  • Chu, Fang-Tsun;Shih, Ding-Kang;Chen, Hung-Tse;Yeh, Yung-Hui
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.509-512
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    • 2006
  • In this paper, we proposed the novel device and process design to enhance the uniformity of low-temperature poly-Si TFTs fabricated by sequential lateral solidification (SLS). The proposed design schemes can avert the conventional two-shot SLS process-induced issues. Moreover, different design considerations between conventional excimer laser crystallization and the SLS process were also proposed and discussed.

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The Characterization of Poly-Si Thin Film Transistor Crystallized by a New Alignment SLS Process

  • Lee, Sang-Jin;Yang, Joon-Young;Hwang, Kwang-Sik;Yang, Myoung-Su;Kang, In-Byeong
    • Journal of Information Display
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    • v.8 no.4
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    • pp.15-18
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    • 2007
  • In this paper, we investigated the SLS process to control grain boundary(GB) location in TFT channel region, and it has been found to be applicable for locating the GB at the same location in the channel region of each TFT. We fabricated TFT by applying a new alignment SLS process and compared the TFT characteristics with a normal SLS method and the grain boundary location controlled SLS method. Also, we have analysed degradation phenomena under hot carrier stress conditions for n-type LDD MOSFETs.

Development of World's Largest 21.3' LTPS LCD using Sequential Lateral Solidification(SLS) Technology

  • Kang, Myung-Koo;Kim, Hyun-Jae;Chung, Jin-Koo;Kim, Dong-Beom;Lee, Su-Kyung;Kim, Cheol-Ho;Chung, Woo-Seok;Hwang, Jang-Won;Joo, Seung-Yong;Meang, Ho-Seok;Song, Seok-Chun;Kim, Chi-Woo;Chung, Kyu-Ha
    • Journal of Information Display
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    • v.4 no.4
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    • pp.4-7
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    • 2003
  • The world largest 21.3" LTPS LCD has been successfully developed using SLS crystallization technology. Integration of gate circuit, transmission gate and level shifter was successfully performed in a large area display. Uniform and high performance of high quality grains of SLS technology make it possible to realize a uniform large size LTPS TFT-LCD with half the number of data driver IC's that is typically used in a-Si LCD. High aperture ratio of 65 % was achieved using an organic inter insulating method which lead to a high brightness of 500 cd/$cm^2$.

Trend of Crystallization Technology and Large Scale Research for Fabricating Thin Film Transistors of AMOLED Displays (AMOLED 디스플레이의 박막트랜지스터 제작을 위한 결정화 기술 동향 및 대형화 연구)

  • Kim, Kyoung-Bo;Lee, Jongpil;Kim, Moojin;Min, Youngsil
    • Journal of Convergence for Information Technology
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    • v.9 no.5
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    • pp.117-124
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    • 2019
  • This paper discusses recent trends in the fabrication of semiconducting materials among the components of thin film transistors used in AMOLED display. In order to obtain a good semiconductor film, it is necessary to change the amorphous silicon into polycrystalline silicon. There are two ways to use laser and heat. Laser-based methods include sequential lateral solidification (SLS), excimer laser annealing (ELA), and thin-beam directional crystallization (TDX). Solid phase crystallization (SPC), super grain silicon (SGS), metal induced crystallization (MIC) and field aided lateral crystallization (FALC) were crystallized using heat. We will also study research for manufacturing large AMOLED displays.

Development of New Polymer Powders for the Industrial SFF system by using SLS Process (SLS 공정을 이용한 산업용 SFF 시스템용 신소재 고분자분말 개발)

  • Bang, Young-Kil;Choi, Ki-Seop;Park, Chang-Hyun;Kim, Hyung-Il;Lim, Byung-Seok;Kim, Dong-Soo
    • Proceedings of the KSME Conference
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    • 2007.05a
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    • pp.1404-1409
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    • 2007
  • Polymers for laser sintering were needed in order to fabricate the articles with the three-dimensional duplication equipment of SLS (selective laser sintering) process. The thermal properties, particle size, distribution, and shape of polymer powder had a close relation with the processibility of laser sintering. In this study, we prepared new polymer powders with uniform size and higher bulk density by wet process. Wet process consists of several finely-controlled steps such as dissolution, nucleation, propagation and crystallization. Several additives were added to improve the thermal, rheological, and flow properties.

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Formation of single-crystal Si islands via continuous-scan Sequential Lateral Solidification

  • Turk, B.A.;Wilt, P.C. var der;Limanov, A.B.;Chitu, A.M.;Im, J.S.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2003.07a
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    • pp.245-247
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    • 2003
  • We have previously shown that single-crystal Si regions on glass substrates can be obtained by crystallizing as-deposited a-Si films using a specific version of the SLS process, referred to as dot-SLS Such single-crystal islands can, for instance, be used for manufacturing of high-performance TFTs that are expected to become increasingly more relevant in the future. In this paper, we demonstrate that the dot-SLS process can be implemented using a continuous-scan SLS scheme that enables the attainment of high crystallization rates that are desired for industrial applications. We will furthermore report on recent experimental findings regarding the nature of the defects that can be created during the process.

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SLS Technology for High Performance Poly-Si TFTs and Its Application to Advanced LCD and SOG

  • Ryu, Myeong-Gwan;Son, Gon;Kim, Cheon-Hong;Lee, Jeong-Yeol
    • Electrical & Electronic Materials
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    • v.19 no.9
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    • pp.11-19
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    • 2006
  • SLS crystallization and CMOS LTPS process have been developed for high performance and uniform characteristics. By strictly optimizing SLS optics in conventional 2 shot SLS process, threshold voltage variation of 720 pixel TFTs in 2.2-inch QVGA panel (240xRGB) was remarkably decreased from 1.89 V to 0.56 V of 3sigma value. Mobility of the channel doped NTFT and PTFT for circuits were $146\;and\;38cm^{2}/Vs$, respectively. Functional unit circuits for SOG were also fabricated and properly operated.

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