• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.1756-1760
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• 2006

LTPS technology based on SLS Crystallization was intensively reviewed. LTPS structure produced by SLS crystallization is composed of much larger grains compared with conventional ELA crystallization structure, which can give higher TFT performances. However, TFT performance uniformity and anisotropy problem should be solved for it to be used in mass production. TFT performance uniformity was from main grain boundary position and could be solved by equal defect area structure $(EDAS^{TM})$. TFT performance anisotropy could be also solved by multi-channel (MC) structure that can make parallel component in perpendicular channel direction. The higher TFT performances from SLS technology can make superior optical and/or electrical properties and has been adopted in mass production successfully.

• 한국군사과학기술학회지
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• 제13권1호
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• pp.120-125
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• 2010

For application of transparent bulletproof materials, the SLS(soda-lime-silicate) glass was heated by 2-step crystallization. The DTA curve for SLS glass revealed the nucleation and crystal growth temperature at about $575^{\circ}C$ and $675^{\circ}C$, respectively. The crystallized glass was heated at various conditions(temperature, time). As a result, the maximum nucleation and crystal growth rates were $3.8\times10^5/mm^3{\cdot}hr$ at $575^{\circ}C$ and 20.58nm/min at $680^{\circ}C$, respectively. The bending strength, fracture toughness and vickers hardness were 451.7MPa, $0.9388MPa{\cdot}m^{1/2}$, and $693.9H_v$ which were 201%, 31%, and 22% higher than parent glass, respectively. Surface image and transmittance of crystallized SLS glass were analyzed by optical microscopy and UV/VIS/NIR spectrophotometer. Transmittance of crystallized SLS glass at visible-range(200~800nm) was not changed.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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• pp.8-11
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• 2007

The new technologies in mobile display developed in SEC are briefly reviewed. For a differentiation, SEC's LTPS line is based on SLS (Sequential Lateral Solidification) technology. In this paper, the characteristics of SEC's SLS in recent and future mobile displays were discussed. The microstructure produced by SLS crystallization is dependent on SLS process conditions such as mask design, laser energy density, and pulse duration time. The microstructure and TFT (Thin Film Transistor) performance are closely related. For an optimization of TFT performance, SLS process condition should be adjusted. Other fabrication processes except crystallization such as blocking layer, gate insulator deposition and cleaning also affect TFT performance. Optimized process condition and tailoring mask design can make it possible to produce high quality AMOLED devices. The TFT non-uniformity caused by laser energy density fluctuation could be successfully diminished by mixing technology.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.509-512
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• 2006

In this paper, we proposed the novel device and process design to enhance the uniformity of low-temperature poly-Si TFTs fabricated by sequential lateral solidification (SLS). The proposed design schemes can avert the conventional two-shot SLS process-induced issues. Moreover, different design considerations between conventional excimer laser crystallization and the SLS process were also proposed and discussed.

• Journal of Information Display
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• 제8권4호
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• pp.15-18
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• 2007

In this paper, we investigated the SLS process to control grain boundary(GB) location in TFT channel region, and it has been found to be applicable for locating the GB at the same location in the channel region of each TFT. We fabricated TFT by applying a new alignment SLS process and compared the TFT characteristics with a normal SLS method and the grain boundary location controlled SLS method. Also, we have analysed degradation phenomena under hot carrier stress conditions for n-type LDD MOSFETs.

• Journal of Information Display
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• 제4권4호
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• pp.4-7
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• 2003

The world largest 21.3" LTPS LCD has been successfully developed using SLS crystallization technology. Integration of gate circuit, transmission gate and level shifter was successfully performed in a large area display. Uniform and high performance of high quality grains of SLS technology make it possible to realize a uniform large size LTPS TFT-LCD with half the number of data driver IC's that is typically used in a-Si LCD. High aperture ratio of 65 % was achieved using an organic inter insulating method which lead to a high brightness of 500 cd/$cm^2$.

• 융합정보논문지
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• 제9권5호
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• pp.117-124
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• 2019

본 논문에서는 AMOLED 디스플레이 구동회로로 사용되는 박막트랜지스터의 구성요소 중에서 반도제 물질 제조의 최근 동향에 대해 논한다. 트랜지스터에 적용을 위해 특성이 좋은 반도체 막을 얻는 방법으로 비정질 실리콘을 다결정 실리콘으로 변화시켜야 하는데 레이저와 열처리 방법이 있으며, 레이저를 이용한 기술에는 SLS(Sequential Lateral Solidification), ELA(Excimer Laser Annealing), TDX(Thin-beam Directional Crystallization), 열처리 기술에는 SPC(Solid Phase Crystallization), SGS(Super Grain Silicon), MIC(Metal Induced Crystallization), FALC(Field Aided Lateral Crystallization)가 대표적이며, 이들에 대해 상세히 설명한다. 본 연구실에서 연구중인 레이저 결정화 기술의 대형 AMOLED 디스플레이 제작을 위한 연구 내용도 다룬다.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2007년도 춘계학술대회A
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• pp.1404-1409
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• 2007

Polymers for laser sintering were needed in order to fabricate the articles with the three-dimensional duplication equipment of SLS (selective laser sintering) process. The thermal properties, particle size, distribution, and shape of polymer powder had a close relation with the processibility of laser sintering. In this study, we prepared new polymer powders with uniform size and higher bulk density by wet process. Wet process consists of several finely-controlled steps such as dissolution, nucleation, propagation and crystallization. Several additives were added to improve the thermal, rheological, and flow properties.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.245-247
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• 2003

We have previously shown that single-crystal Si regions on glass substrates can be obtained by crystallizing as-deposited a-Si films using a specific version of the SLS process, referred to as dot-SLS Such single-crystal islands can, for instance, be used for manufacturing of high-performance TFTs that are expected to become increasingly more relevant in the future. In this paper, we demonstrate that the dot-SLS process can be implemented using a continuous-scan SLS scheme that enables the attainment of high crystallization rates that are desired for industrial applications. We will furthermore report on recent experimental findings regarding the nature of the defects that can be created during the process.

• E2M - 전기 전자와 첨단 소재
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• 제19권9호
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• pp.11-19
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• 2006

SLS crystallization and CMOS LTPS process have been developed for high performance and uniform characteristics. By strictly optimizing SLS optics in conventional 2 shot SLS process, threshold voltage variation of 720 pixel TFTs in 2.2-inch QVGA panel (240xRGB) was remarkably decreased from 1.89 V to 0.56 V of 3sigma value. Mobility of the channel doped NTFT and PTFT for circuits were $146\;and\;38cm^{2}/Vs$, respectively. Functional unit circuits for SOG were also fabricated and properly operated.