• 제목/요약/키워드: Saturation field

검색결과 540건 처리시간 0.025초

A Computational Method to Consider the Saturation of Magnetic Field In a High Density Recording Head

  • Park, Gwan-Soo
    • Journal of Magnetics
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    • 제8권4호
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    • pp.164-168
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    • 2003
  • In high density recording system, the recording head field on a medium should be focused in small bit area and should have a sufficient value to overcome the medium coercivity, which resulted in head saturation. In this paper, an efficient method to access the head field and field gradient considering head saturation is presented. The magnetic vector potential on the head surface is pre-calculated considering head saturation in several cases and accumulated into database. The head field on the recording media is easily produced solving Laplace equation using accessed magnetic vector potential boundaries. The computed head field is compared with a quantified magnetic force microscopy measurement.

SC PMOSFET의 수평 전개 모델과 노쇠화 메카니즘 (Lateral Electric Field Model and Degradation Mechanism of surface-Channel PMOSFET's)

  • 양광선;박종태;김봉렬
    • 전자공학회논문지A
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    • 제31A권1호
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    • pp.54-60
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    • 1994
  • In this paper, we present the analytical models for the change of the lateral electric field distribution and the velocity saturation region length with the electron trapping of stressed SC-PMOSFET in the saturation region. To derive the hot-electron-induced lateral electric field of stressed SC-PMOSFET. Ko's pseudo two dimensional box model in the saturation region which illustrates the analysis of the velocity saturation region is modified under the condition of electron trapping in the oxide near the drain region. From the results, we have the following lateral electric field in the y-direction, that is, E(y) ES1satT.cosh(y/l) qNS1tT.sinh(y/l)/lCox. It is shown that the trapped electrons influence the field in the drain region. decreasing the lateral electric field. Calculated velocity saturaion length increases with the trapped electrons. increasing the drain current of stressed SCPMOSFET. This results well explain the HEIP phenomenon of PMOSFET's.

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전기장을 받는 강유전체 세라믹내의 균열 해석 (Analysis of a Crack in Ferroelectric Ceramics Subjected to Electric Fields)

  • 범현규;김인옥
    • 한국정밀공학회지
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    • 제20권6호
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    • pp.138-144
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    • 2003
  • A crack in a ferroelectric ceramic subjected to an electric field is analyzed. The boundary of the electrical saturation zone is estimated based on the finite-width saturation zone model, which is analogous to a finite-width Dugdale zone model for mode III. It is shown that the shape and size of the switching zone depends strongly on the boundary of the electrical saturation zone and the ratio of the coercive electric field to the yield electric field. The crack tip stress intensity factor under small scale conditions is evaluated by employing the model of electric nonlinear domain switching. It is found that fracture toughness of the ferroelectric material may be increased or decreased depending on the material property of electrical nonlinearity.

다결정 Mg-페라이트의 기공율, 입경, 포화 자화 및 이방성 자기장이 강자성 공명 특성에 미치는 영향 연구 (The study on effects of porosity grain size, magnetization and anisotropy field on the properties of ferromagnetic resonance)

  • 김진호;주승기;최덕균
    • 전자공학회논문지A
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    • 제32A권1호
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    • pp.97-102
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    • 1995
  • The ferromagnetic resonance properties of Mg ferrites which have various porosity grain size, and saturation magnetization are measured at one frequency. This allows a determination of the anisotropy field(Ha). The saturation magnetization multiplied by porosity is the resonance magnetic field. As the saturation magnetization increases, the linewidth decerases due to decrement of magnetic inhomogenity in sample. the porosity is a major factor broadening the linewidth for Mg ferrite when porosity is more thatn 6%, and the anisotropy field is dominant when porosity is less than 6%.

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Ag - CoFe 합금박막의 자기저항 및 강자성 상하지층의 효과 (Effect of Fcrromagnetic Layer and Magnetoresistance Behavior of Co-Evaporated Ag-CoFe Nano-Granular Alloy Films)

  • 김용혁;이성래
    • 한국자기학회지
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    • 제7권6호
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    • pp.308-313
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    • 1997
  • 조성과 강자성 상하지층이 CoFe-Ag 나노입상 합금박막의 거대자기저항과 포화자기장에 미치는 효과에 대하여 연구하였다. 3000 .angs. 두께의 ( $Co_{92}$Fe$_{8}$)$_{31}$Ag$_{69}$ 합금박막에서 최대 자기저항 25.7%를 얻었고, 그 때 포화자장은 2.1 kOe 이었다. 100 .angs. 두께의 박막은 자기저항비가 1.2%이고 포화자장은 5.2 kOe 이었다. 200 .angs. 두께의 합금 박막에 100 .angs. Fe를 상하지층으로 증착하였을 때 자기저항은 9.5 %dptj 11 %로 증가하였고 포화자기장은 2.8 kOe에서 1.8 kOe로 개선되었다. 300 .angs. 이하의 합금박막에 강자성 상하지층의 피복은 교환결합에 의하여 합금박막의 포화자기장을 감소시키는 효과가 있었다. 강자성 상하지층에 의한 자기저항의 증가는 표면에서의 전도전자의 스핀 전도산란의 감소와 계면저항에 의한 전류새흐름의 감소로 기인되는 것으로 보인다. 자기저항의 증가 효과는 합금박막의 두께가 약 300 .angs. 이하에서 나타났다. 교환결합 강자성체인 NiFe 그리고 Fe 중에서 Fe가 교환결합에 의한 포화자기장 감소에 좀더 효과적이었다.

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Co - Ag 합금박막의 거대자기저항 및 강자성 상하지층의 효과 (Giant Magnetoresistance Behavior and the Effect of Ferromagnetic Layer on the Co-Ag Nano-granular Alloy Films)

  • 김용혁;이성래
    • 한국자기학회지
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    • 제7권1호
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    • pp.31-37
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    • 1997
  • 조성과 강자성 상하지층이 Co-Ag 나노입상 합금박막의 거대자기저항과 포화자기장에 미치는 효과에 대하여 연구하였다. 두께 3000 .angs. , 30 at.% Co 조성의 증착된 상태의 합금박막에서 23 %의 최대 자기저항비를 얻었으며 포화자기장은 2.3 kOe 였다. 두께 .angs.의 $Co_{30}$Ag$_{70}$ 합금박막의 자기저항비는 3.65 %, 포화자기장은 3.0 kOe 이었으며 200 .angs. 의 Fe를 상하지층으로 증착하였을 때 자기저항비는 3.3%, 포화자기장은 1.23 kOe로 감소하였다. 강자성 상하지층이 교환결합에 의하여 합금박막의 포화자기장을 감소 시키는 효과가 있었으며 그 효과는 합금박막의 두께가 약 3000 .angs. 이하에서 나타났다. 교환결합 강자성체 인 Co, NiFe, 그리고 Fe중에서 포화자 기장 감소에 가장 효과적인 재료는 Fe 이었다.다.

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온실 재배 꽈리고추의 필요수량 (Water Requirement of Twist Peppers in Greenhouse)

  • 윤용철
    • 한국농공학회지
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    • 제42권4호
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    • pp.59-66
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    • 2000
  • This study was carried out to investigated the water requirement of twisted sweet peppers which are cultivated in a green house. The meteorological conditions during the experiment period was close to that of normal year except the temperature and relative humidity. The growth status was improved with the increased saturation ratio. The range of the variation of daily water requirement were very large. The peak consumption occurred in the early August. And the higher saturation ratio resulted in higher water requirement. The total water requirement were about 57.180g/d/plant for pot with 100% (P100) of saturation , about 38.700g/d/plant for pot with 80%(P80) of saturation , about 23,720g/d/plant for pot with 60%(P60) of saturation, and about 53, 390g/d/plant for field cultivation in the green house, respectively. The water requirement was correlated with average ambient temperature and growing status, while no significant correlation were found between water requirement and minimum relative humidity or intensity of solar radiation. And the higher correlation was shown as the saturation ratio was increased. The transpiration coefficients of twisted sweet pepper were 378.0g/g for field cultivation in the green house, 363.3g/g for P100, 338.7g for P80 which was the smallest among pot cultivation , and 472.1g/g for P60 , respectively.

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자속에 노출된 인체의 혈중 산소 포화농도의 변화에 관한 연구 (A Study on the Oxygen Saturation Level Changes in the Blood Exposed to the Static Magnetic Field)

  • 정용철;이동훈
    • 한국안전학회지
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    • 제22권6호
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    • pp.87-90
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    • 2007
  • 최근 의료분야에서 인체의 생리학적 조직에 정자계가 영향을 미치는 것으로 밝혀짐에 따라 정자계를 사용하는 의료장비의 중요성이 대두되고 있다. 본 연구의 목적은 자속의 영향에 의한 혈중 산소 포화 농도의 변화를 평가하는 것이다. 본 연구의 결과는 검지 손가락에 정자계 쌍극자가 맞추어졌을 때 혈중 산소포화 농도가 증가한다는 것을 보여준다.

Observation of saturation transfer characteristics in solution processed vertical organic field-effect transistors (VOFETs) with high leakage current

  • Sarjidan, M.A. Mohd;Shuhaimi, Ahmad;Majid, W.H. Abd.
    • Current Applied Physics
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    • 제18권11호
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    • pp.1415-1421
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    • 2018
  • Unlike ordinary organic field-effect transistors (OFETs), saturation current is hardly to be found in vertical OFETs (VOFETs). Moreover, the fabrication process of patterned sourced for VOFETs is quite complex. In this current work, a simple solution processed VOFET with directly deposited intermediate silver source electrode has been demonstrated. The VOFET exhibits a high leakage current that induces an inversion polarity of its transistor behavior. Interestingly, a well-defined saturation current was observed in the linear scale of transfer characteristic. The VOFET operated with high-current density > $280mA/cm^2$ at $V_d=5V$. Overview potential of the fabricated device in display application is also presented. This preliminary work does open-up a new direction in VOFET fabrication and their application.

THE EFFECT OF OVER AND UNDERLAYER ON THE MAGNETORESISTANCE IN Co-Ag NANO-GRANULAR ALLOY FILMS

  • Kim, Yong-Hyuk;Lee, Seong-Rae
    • 한국자기학회지
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    • 제5권5호
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    • pp.451-455
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    • 1995
  • The composition and thickness dependence and the ferromagnetic under- and overlayer effect on the magnetoresistance ratio and saturation field of the Co-Ag nano-granular films were investigated. The maximum magnetoresistance (23% at R.T.) in the as-deposited state was obtained in the $3000{\AA}$ $Co_{30} Ag_{70}$ bare alloy film. As the thickness of the alloy films decreased below $500{\AA}$, the MR ratio decreased because of the resistivity increase and the non-uniform film formation. We showed that the ferromagnetic over- and underlayer could reduce the saturation field of the nano-granular films via exchange coupling effect. The magnetoresistance and the saturation field of the $100{\AA}$ alloy film were 3.65 % and 2.85 kOe respectively and those of the under- and overlayered alloy films with $200{\AA}$ Fe were 3.3 % and 1.23 kOe respectively.

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