• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.953-956
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• 2008

Using the theoretical model of Auger electron emission, effects of MgO properties which include band gap energy, escape probability, gas ion, and doping elements on the yield of secondary electron emission were examined. The results indicated that the band gap of MgO must be decreased and escape probability must be enhanced in order to increase the yield of secondary electrons from Xe ions and that may proved to be a critical for achieving high luminance efficacy in ac-PDPs.

• Journal of Radiation Protection and Research
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• v.26 no.3
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• pp.177-181
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• 2001

The conversion efficiency of a cesium iodine coated micro-channel plate is studied. We use the EGS4 code to transport photons and generated electrons until their energies become less than 1keV and 10keV respectively. Among the generated electrons, the emission from the secondary electrons located within the escape depth of 56nm from the photo-converter boundary is estimated by integrating the product of the secondary electrons with a probability depending only on their geometric locations. The secondary electron emission from the generated electrons of energy higher than 100eV is estimated by the 'universal yield curve'. The sum of these provides an estimate for the secondary electron yield and we show that results of applying this algorithm agree with known experimental results. Using this algorithm, we computed secondary electron emissions from a micro-channel plate used in a gas electron multiplier detector that is currently being developed at Korea Atomic Energy Research Institute.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1384-1387
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• 2007

We have investigated the sputtering and secondary electron emission characteristics of MgO protective layer according to the $O_2$ partial pressure. The MgO layer have been deposited by electron beam evaporation method and have varied the $O_2$ partial pressure as 0, $5.2{\times}10^{-5}$, $1.0{\times}10^{-4}$, and $4.1{\times}10^{-4}$ Torr. It has been known that the secondary electron emission coefficient and the number of defect energy levels increased as the $O_2$ partial pressure increases. So we have investigated the property of sputtering yield according to the $O_2$ partial pressure. We have known that the sputtering yield deceases as the $O_2$ partial pressure increases by using the FIB system.

• Journal of Korean Vacuum Science & Technology
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• v.5 no.1
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• pp.7-10
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• 2001

Ion induced secondary electron emission coefficients γ of protecting layers of an AC plasma display panel(AC-PDP) have been measured. In order to solve the surface charging effect during the measurement at insulating samples like MgO, a new method with the patterned gold line charge neutralization has been introduced. The measurement was performed at the samples, MgO and MgO+MgF$_2$, which showed a great difference in the firing voltage between the two protecting layers. The γ value has been compared with the firing voltage Vf of the AC-PDP with the same protecting layer. Correct relationship between γ and Vf has been observed. Thus, the patterned gold line method has been proven to be successful for the measurement of the secondary electron emission yield at insulator sample surfaces.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.221-223
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• 2002

We have measured the secondary electron emission yield ${\gamma}_i$ from MgO films deposited on $SiO_2/Si$ for low energy noble ions. A pulsed ion beam technique was employed in order to suppress the surface charging effect during the measurement. From the measurement of the ion - induced secondary electron emission coefficients ${\gamma}_i$ for 5 noble ions with energies ranging from 50 eV to 225 eV, it was shown that, with increasing the kinetic energies of the incident ions, the ${\gamma}_i$ increased

• Journal of Information Display
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• v.3 no.1
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• pp.17-21
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• 2002

Measurement of the ion-induced secondary electron emission coefficient (${\gamma}_i$) for insulating films is hampered by an unavoidable charging problem. Here, we demonstrate that a pulsed ion beam technique is a viable solution to the problem, allowing for accurate measurement of ${\gamma}_i$ for insulating materials. To test the feasibility of the pulsed ion beam method, the secondary electron emission coefficient from n-Si(100) is measured and compared with the result from the conventional continuous beam method. It is found that the ${\gamma}_i$ from n-Si(100) by the ion pulsed beam measured to be 0.34, which is the same as that obtained by continuous ion beam. However, for the 1000 A $SiO_2$ films thermally deposited on Si substrate, the measurement of ${\gamma}_i$ could be carred out by the pulsed ion method, even though the continuous beam method faced charging problem. Thus, the pulsed ion beam is regarded to be one of the most suitable methods for measuring secondary electron coefficient for the surface of insulator materials without experiencing charging problem. In this report, the dependence of ${\gamma}_i$ on the kinetic energy of $He^+$ is presented for 1000 ${\AA}$ $SiO_2$ films. And the secondary electron emission coefficient of 1000 ${\AA}$ MgO e-beam-evaporated on $SiO_2/Si$ is obtained using the pulsing method for $He^+$ and $Ar^+$ with energy ranging from 50 to 200 eV, and then compared with those from the conventional continuous method.

• Journal of radiological science and technology
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• v.1 no.1
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• pp.31-35
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• 1978

X-rays contribute to electron emission from material surfaces primarily through photoelectric interaction. A simple model is described for predicting the yield and energy spectrum of photon and Auger electrons emitted from materials exposed to X-ray with low energy. In this paper, We have calculated the yield of primary, Auger, and secondary, electrons. The results of the photoelectric yield model developed here suggests that. I) The angular distribution of emitted electrons(Per unit angle) is proportional to $sin{\theta}\;cos{\theta}$ for all electron energies and all components(Primary, Auger, or Secondary) II) The shape of the energy spectrum of the photoelectric yield is independent of angle. III) For this targets the forward and backward photoelectric yields are indentical.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04a
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• pp.148-151
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• 2000

$Mg_{2-2x}Ti_xO_2$ films were prepared by e-beam evaporation method to be used as possible substitutes for the conventional MgO protective layer. The oxygen content in the films and in turn, the ratio of metal to oxygen gradually increased with increasing the $TiO_2$ content in the starting materials. The pure MgO films exhibited the crystallinity with strong (111) orientation. The $Mg_{2-2x}Ti_xO_2$ films, however, had the crystallinity with (311) preferred orientation. When the $[TiO_2/(MgO+TiO_2)]$ ratios of 0.1 and 0.15 were used, the deposited films exhibited the secondary electron emission yields improved by 50% compared to that of the conventional MgO protective layer, which resulted in reduction in discharge voltage by 12%.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.877-881
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• 2006

We obtained sputtering yields for the MgO, $MgAl_2O_4$ and $MgAl_2O_4/MgO$ films using the FIB system. $MgAl_2O_4/MgO$ protective layers have been found to have less $24^{\sim}^30%$ sputtering yield values from 0.24 atoms/ion up to 0.36 atoms/ion than MgO layers with the values from 0.36 atoms/ion up to 0.45 atoms/ion for irradiated $Ga^+$ ion beam whose energies ranged from 10 keV to 14 keV. And $MgAl_2O_4$ layers have been found to have lowest sputtering yield values from 0.88 up to 0.11. It is also found that $MgAl_2O_4/MgO$ and MgO have secondary electron emission $coefficient({\gamma})$ values from 0.09 up to 0.12 for $Ne^+$ ion whose energies ranged from 50 eV to 200 eV.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.432-435
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• 1997

In AC PDP, electrodes are covered with dielectric layer and the discharge is formed on the surface of the dielectric layer. MgO protection layer on the dielectric layer in PDP prevents a dielectric layer from sputtering and lowers the firing voltage due to a large secondary electron emission yield( ${\gamma}$ ). Until now, the MgO protection layer is mainly prepared by E-beam evaporation. However, there are some problems that is easy pollution and change of its characteristics with time and delamination. Therefore, in this study, MgO protection layer is prepared on dielectric layer by reactive R.F. magnetron sputtering with MgO target. Discharge characteristics and secondary electron emission coefficients of PDP are studied as a parameter of preparation conditions. Discharge voltage characteristics of the prepared MgO layer can be stable and improved by the annealing process in vacuum chamber.