• Transactions of Materials Processing
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• v.8 no.3
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• pp.247-247
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• 1999

The segregation (distribution) of nickel and the composition of its constituents influence the low thermal expansion characteristics (Invar effect) in Fe-30 wt.% Ni-12.5 wt.% Co-xC Invar alloy. The change of coefficient of the thermal expansion and magnetic properties were studied as an aspect of carbon addition causing the segregation of Ni in primary austenite of as-cast Fe-30 wt.% Ni-12.5 wt.% Co Invar alloy. The coefficient of thermal expansion of Fe-30 wt.% Ni-12.5 wt.% Co-xC Invar alloy showed its lowest value at 0.08 wt.% carbon, increased with increasing carbon content in the range of 0.08-1.0 wt.%C, kept constant at 1.0-2.0 wt.%C and decreased at carbon higher than 2.0 wt.%. The effective distribution of the coefficient of nickel in as-cast Fe-30 wt.% Ni-12.5 wt.% Co-xC Invar alloy increased with increasing carbon content. The volume fraction of they phase of Fe-30 wt.% Ni-12.5 wt.% Co-xC alloy increased with increasing carbon content. The microstructure of Fe-30 wt.% Ni-12.5 wt.% Co-xC alloy changed with the carbon content was independent of the coefficient of thermal expansion. The Curie temperature changed linearly with the carbon content and was similar to the change of the coefficient of thermal expansion. Moreover, the coefficient of thermal expansion decreased when the ratio of saturation magnetization to Curie temperature ($\sigma_s/T_c$) increased, decreasing the Curie temperature and showed a specific relationship with the magnetic properties of the Fe-30 wt.% Ni-12.5 wt.% Co-xCInvar alloy.

• Journal of the Korean Ceramic Society
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• v.34 no.10
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• pp.1015-1020
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• 1997

In the Nd;YAG crystal growth by Czochralski method, the relationship between the core formation and the solid-liquid interface was observed by controlling the temperature gradient in the furnace. When the crystal was grown along<111> direction, defects and core area were reduced as the temperature gradient increased. The optimum temperature gradient was found to be higher than 4$0^{\circ}C$/cm. The Nd3+ concentration analysis by ICP-Mass showed that the segregation coefficient was about 20% higher in the core region than core-free region, where the segregation coefficients of core region and core-free region were 0.22 and 0.18, respectively.

• The Journal of the Acoustical Society of Korea
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• v.32 no.1
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• pp.79-85
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• 2013

Feature extraction of CASA system uses time continuity and channel similarity and makes correlogram of auditory elements for the use. In case of using feature extraction with cross correlation coefficient for channel similarity, it has much computational complexity in order to display correlation quantitatively. Therefore, this paper suggests feature extraction method using non-parametric correlation coefficient in order to reduce computational complexity when extracting the feature and tests to segregate target speech by CASA system. As a result of measuring SNR (Signal to Noise Ratio) for the performance evaluation of target speech segregation, the proposed method shows a slight improvement of 0.14 dB on average over the conventional method.

• Nuclear Engineering and Technology
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• v.52 no.1
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• pp.148-154
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• 2020

The radiation induced segregation of Cr at grain boundaries (GBs) in Ferritic/Martensitic steels was modeled assuming vacancy and interstitialcy diffusion mechanisms. In particular, the dependence of segregation on temperature and grain boundary misorientation angle was analyzed. It is found that Cr enriches at grain boundaries at low temperatures primarily through the interstitialcy mechanism while depletes at high temperatures predominantly through the vacancy mechanism. There is a crossover from Cr enrichment to depletion at an intermediate temperature where the Cr:Fe vacancy and interstitialcy diffusion coefficient ratios intersect. The bell-shape Cr enrichment response is attributed to the decreasing void sinks inside the grains as temperature rises. It is also shown that low angle grain boundaries (LAGBs) and special Σ coincidence-site lattice (CSL) grain boundaries exhibit suppressed radiation induced segregation (RIS) response while high angle grain boundaries (HAGBs) have high RIS segregation. This different behavior is attributed to the variations in dislocation density at different grain boundaries.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.18 no.5
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• pp.195-199
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• 2008

Production of the silicon feedstock for the semiconductor industry cannot meet the requirement for the solar cell industry because the production volume is too small and production cost is too high. This situation stimulates the solar cell industry to try the lower grade silicon feedstock like UMG (Upgraded Metallurgical Grade) silicon of 5$\sim$6 N in purity. However, this material contains around 1 ppma of dopant atoms like boron or phosphorous. Calculation of the composition profile of these impurities using segregation coefficient during crystal growth makes us expect the change of the type from p to n : boron rich area in the early solidified part and phosphorous rich area in the later solidified part of the silicon ingot. It was expected that the change of the growth speed during the silicon crystal growth is effective in controlling the amount of the metal impurities but not effective in reducing the amount of dopants.

• KIEE International Transactions on Electrophysics and Applications
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• v.5C no.1
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• pp.18-22
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• 2005

We developed a new systematic calibration procedure and applied it to the calibration of the diffusivity, segregation and TED model of the indium impurity. The TED of the indium impurity was studied under 4 different experimental conditions. Although the indium proved to be susceptible to the TED, the RTA was effective in suppressing the TED effect and in maintaining a steep retrograde profile. Just as in the case of boron, indium demonstrated significant oxidation-enhanced diffusion in silicon and its segregation coefficients at the Si/SiO₂ interface were significantly below 1. In contrast, the segregation coefficient of indium decreased as the temperature increased. The accuracy of the proposed technique has been validated by SIMS data and 0.13-㎛ device characteristics such as Vth and Idsat with errors less than 5% between simulation and experiment.

• Transactions on Electrical and Electronic Materials
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• v.5 no.6
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• pp.211-214
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• 2004

We developed a new systematic calibration procedure which was applied to the calibration of the diffusivity, segregation and TED model of the indium impurity. The TED of the indium impurity has been studied using 4 different groups of experimental conditions. Although the indium is susceptible to the TED, the RTA is effective to suppress the TED effect and maintain a steep retrograde profile. Like the boron, the indium shows significant oxidationenhanced diffusion in silicon and has segregation coefficients at the $Si/SiO_2$ interface much less than 1. In contrast, however, the segregation coefficient of indium decreases as the temperature increases. The accuracy of the proposed technique is validated by SIMS data and $0.13 {\mu}m$ device characteristics such as $V_{th}$ and $Id_{sat}$ with errors less than $5 \%$ between simulation and experiment.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2003.12a
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• pp.31-34
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• 2003

We developed a new systematic calibration procedure which was applied to the calibration of the diffusivity, segregation and TED model of the indium impurity. The TED of the indium impurity has been studied using 4 different groups of experimental conditions. Although the indium is susceptible to the TED, the RTA is effective to suppress the TED effect and maintain a steep retrograde profile. Like the boron, the indium shows significant oxidation-enhanced diffusion in silicon and has segregation coefficients at the $Si/SiO_2$ interface much less than 1. In contrast, however, the segregation coefficient of indium decreases as the temperature increases. The accuracy of the proposed technique is validated by SIMS data with errors less than 5% between simulation and experiment.

• Resources Recycling
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• v.30 no.4
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• pp.20-26
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• 2021

Solar grade silicon (SoG-Si) has been commercially supplied mainly from off-grade high-purity silicon manufactured for electronic-grade Si (EG-Si). Therefore, for wider application of solar cells, the development of a refining process at a considerably lower cost is required. The most cost-effective and direct approach for producing SoG-Si is to purify and upgrade metallurgical-grade Si (MG-Si). In this study, directional solidification of molten MG-Si was conducted in a high-frequency induction furnace to remove iron from molten Si. The experimental conditions and results were also discussed with respect to the effective segregation coefficient, Scheil equation, and Peclet number. The study showed that when the descent velocity of the specimen decreased, the macro segregations of impurities and ingot purities increased. These results were derived from the decrease in the effective segregation coefficient with the decrease in the rate of descent of the specimen.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.3
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• pp.210-222
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• 1994

The characteristics of flows, temperatures, and concentrations of oxygen are numerically studies in the Czochralski furnace with a uniform axial magnetic field. Important governing factors to the flow fields include buoyancy, thermocapillarity, centrifugal force, magnetic force, diffusion and segregation coefficients of the oxygen, evaporation coefficient in the form of SiO, and ablation rate of crucible wall. With an assumption that the flow fields have reached the steady state, which means that two velocity components in the meridional plane and circumferential velocity, temperatures, electric current intensity become non-transient, then unsteady concentration field of oxygen has been analyzed with an initially uniform oxygen concentration. Oxygen transports due to convection and diffusion in the Czochralski flow field and oxygen flux through the growing crystal surface has been investigated.