• Journal of the Semiconductor & Display Technology
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• v.11 no.1
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• pp.61-65
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• 2012

In this study, for use of carbon nanotubes (CNTs) as a cold cathode of x-ray tubes, we examine the effects of selective growth of CNTs on their field emission properties and long-term stability. The selective growth of CNTs was performed by selectively etching the catalyst layer which was used for CNTs' nucleation. CNTs were grown on conical-type tungsten substrates using an inductively-coupled plasma chemical vapor deposition system. For all the grown CNTs, their morphologies and microstructures were analyzed by field-emission scanning electron microscope and Raman spectroscopy. The electron-emission properties of CNTs and the long-term stability of emission currents were measured and characterized according to the CNTs' growth position on the substrate.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 2000.06a
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• pp.87-125
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• 2000

A new paradigm of crystal growth was suggested in a charged cluster model, where charged clusters of nanometer size are suspended in the gas phase in most thin film processes and are a major flux for thin film growth. The existence of these hypothetical clusters was experimentally confirmed in the diamond and silicon CVD processes as well as in gold and tungsten evaporation. These results imply new insights as to the low pressure diamond synthesis without hydrogen, epitaxial growth, selective deposition and fabrication of quantum dots, nanometer-sized powders and nanowires or nanotubes. Based on this concept, we produced such quantum dot structures of carbon, silicon, gold and tungsten. Charged clusters land preferably on conducting substrates over on insulating substrates, resulting in selective deposition. if the behavior of selective deposition is properly controlled, charged clusters can make highly anisotropic growth, leading to nanowires or nanotubes.

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1357-1359
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• 2001

0.2${\mu}m$ 이하의 최소 선폭을 가지는 소자를 구현할 때 drain induced barrier lowering (DIBL)이나 hot electron effect와 같은 short channel effect (SCE)가 나타나며 이로 인하여 소자의 신뢰성이 악화되기도 한다. 이를 개선하기 위한 방법 중 하나가 silicon selective epitaxial growth (SEG)를 이용한 elevated source/drain (ESD) 구조이다. 본 연 구에서는 silicon selective epitaxial growth를 이용하여 elevated source/drain 구조를 갖는 MOSFET 소자와 일반적인 MOSFET 구조를 갖는 소자와의 차이를 elevated source/drain의 높이 변화에 따른 전류 전압 특성을 이용하여 비교, 분석하였으며 그 결과 elevated source/drain 구조가 short channel effect를 감소시킴을 확인할 수 있었다.

• The Journal of Fisheries Business Administration
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• v.41 no.1
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• pp.113-128
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• 2010

This study is aimed to analyze the economic feasibility of the selective breeding program on the Oliver flounder aquaculture. First of all, in order to evaluate this program, we review the concept and research trend on the selective breeding. The objective of this research is the selective breeding program on the Oliver flounder aquaculture in the Genetics and Breeding Research Center, NFRDI. It was conducted to investigated economic effects of three factors of the selective breeding program on the Oliver flounder aquaculture such as fast growth, disease resistance and increase exports. The results of economic analysis of the selective breeding program on the Oliver flounder aquaculture are as follows; First, there were the significant meaning of the economic effects on the technology of the selective breeding program by fast growth, disease resistance and increase exports. Second, we analyzed in the economic feasibility of the selective breeding program on the Oliver flounder aquaculture from 2004 to 2020, internal rate of return(IRR) was 419%, a benefit-cost ratio was shown to be 24.92, net present value(NPV) was 989,942,464 thousand won, which indicates the economic feasibility of the selective breeding program is very high. Finally, in order to improve the economic feasibility, there is need to be focused on the efficient the selective breeding program on the Oliver flounder aquaculture.

• Microbiology and Biotechnology Letters
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• v.23 no.2
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• pp.214-219
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• 1995

In fermentation of dairy products, bifidobacteria is used in conjunction with other lactic acid bacteria, such as L. acidophilus, L. bulgaricus and S. thermophilus, rendering the enumeration of bifidobacteria difficult. In order to develop optimum conditions for selective enumeration of bifidobacteria, we examined MIC of several antibiotics against various bifidobacteria and other lactic acid bacteria. The growth of L. acidophilus, L. bulgaricus and S. thermophilus were inhibited by lithium chloride at the concentration of less than 4 mg/ml, whereas growth inhibition of bifidobacteria occurred at concentrations over 6-10 mg/ml. Tetracycline and chloramphenicol were also found to selectively inhibit growth of other lactic acid bacteria at the concentration of 1-3 $\mu$g/ml. Addition of 6 mg/ml lithium chloride, 1 $\mu$g/ml, tetracycline or 3 $\mu$g/ml chloramphenicol to medium was found to be optimal for selective enumeration of bifidobacteria. By using these three inhibitory chemicals in the TPY medium, higher number of bifidobacteria were selectively isolated than with NPNL agar and LP agar.

• Journal of Environmental Science International
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• v.23 no.6
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• pp.1075-1083
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• 2014

The objective of this study was to evaluate the effect of cutting types on microclimate and growth characteristics of afforested tree in Quercus acutissima stand after different types of cutting. The difference in temperature reaching $5.2^{\circ}C$ was shown in between clear cutting and selective cutting treatments. On July and August days with temperatures more than $35^{\circ}C$ often appeared in clear cutting stand. The values of VPD in July and August were higher than those in other months. Maximum VPD of 3.99 kPa was shown in clear cutting stand on May 23 as a prolonged rainless days appeared. However, VPD in selective cutting stand always stayed under 3.0 kPa throughout growing season. A higher intensity was shown in clear cutting and strip clear cutting stands, reaching to more than $1,600{\mu}mol\;m^{-2}s^{-1}$ at midday on early August, while that in selective cutting stand stayed about 1,500. In relative growth rate selective cutting stand showed a significantly higher relative growth rate in plant height than those in other cutting stands (p<0.05). The number of leaf in current-year branches significantly increased in selective cutting stand, whereas no increase was shown in clear cutting and strip clear cutting stands (p<0.05). In addition, relative elongation rate of current year branch also showed higher values in selective cutting stand compared with that in strip clear cutting stand (p<0.05). However, leaf mass per unit area (LMA) was higher in order of strip clear cutting, clear cutting, and selective cutting stands. From these results it is concluded that environmental conditions in clear cutting and strip clear cutting stands during growing season are more stressful to afforested tree species, resulting in lower relative growth in plant height, elongation of current-year branches, and leaf number per branch compared with those in selective cutting stand. Consequently, more data must be accumulated in the field to find out best cutting type in plantation considering the adaptational characteristic of each tree species varies with species and life span of tree is long.

• Journal of Electrical Engineering and Technology
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• v.6 no.2
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• pp.280-283
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• 2011

In the present work, a new approach is proposed for via interconnects of semiconductor devices, where multi-wall carbon nanotubes (MWCNTs) are used instead of conventional metals. In order to implement a selective growth of carbon nanotubes (CNTs) for via interconnect, the buried catalyst method is selected which is the most compatible with semiconductor processes. The cobalt catalyst for CNT growth is pre-deposited before via hole patterning, and to achieve the via etch stop on the thin catalyst layer (ca. 3nm), a novel 2-step etch scheme is designed; the first step is a conventional oxide etch while the second step chemically etches the silicon nitride layer to lower the damage of the catalyst layer. The results show that the 2-step etch scheme is a feasible candidate for the realization of CNT interconnects in conventional semiconductor devices.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.21 no.4
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• pp.20-25
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• 2020

As nanoscience and nanotechnology advance, techniques for selective pattern growth have attracted significant attention. Silica nanoparticles (NPs) are used as a promising nanomaterials for bio-labeling, bio-imaging, and bio-sensing. In this study, silica NPs were synthesized by a sol-gel process using a modified Stöber method. In addition, the selective pattern growth of silica NPs was achieved by the surface functionalization of the substrate using a micro-contact printing technique of a hydrophobic treatment. The particle size of the as-synthesized silica NPs and morphology of selective pattern growth of silica NPs were characterized by FE-SEM. The contact angle by surface functionalization of the substrate was investigated using a contact angle analyzer. As a result, silica NPs were not observed on the hydrophobic surface of the OTS solution treatment, which was coated by spin coating. In contrast, the silica NPs were well coated on the hydrophilic surface after the KOH solution treatment. FE-SEM confirmed the selective pattern growth of silica NPs on a hydrophilic surface, which was functionalized using the micro-contact printing technique. If the characteristics of the selective pattern growth of silica NPs can be applied to dye-doped silica NPs, they will find applications in the bio imaging, and bio sensing fields.

• Microbiology and Biotechnology Letters
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• v.22 no.4
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• pp.443-445
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• 1994

Eubacterium is one of the predominant bacteria in the human large intestine. currently ES (Eubacterium Selective) medium developed by T. Mitsuoka is commonly used as a selective medium. neomycin sulfate which is one of the selective agents of ES medium inhibited about 50% of the growth of Eubacterium isolated, whereas malidixic acid inhibited only 5% while inhibiting other intestinal bacteria. NES medium which replaced neomycin with nalidixic acid in the ES medium was designed and shown to be better for the isolation and enumeration of Eubacterium sp. than ES medium.

• ETRI Journal
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• v.25 no.6
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• pp.503-509
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• 2003

Selective epitaxial growth (SEG) of silicon has attracted considerable attention for its good electrical properties and advantages in building microstructures in high-density devices. However, SEG problems, such as an unclear process window, selectivity loss, and nonuniformity have often made application difficult. In our study, we derived processing diagrams for SEG from thermodynamics on gas-phase reactions so that we could predict the SEG process zone for low pressure chemical vapor deposition. In addition, with the help of both the concept of the effective supersaturation ratio and three kinds of E-beam patterns, we evaluated and controlled selectivity loss and non-uniformity in SEG, which is affected by the loading effect. To optimize the SEG process, we propose two practical methods: One deals with cleaning the wafer, and the other involves inserting dummy active patterns into the wide insulator to prevent the silicon from nucleating.