• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2008.10a
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• pp.106-109
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• 2008

Polyurethane has been one of the most important materials for automobile elastic parts such as bumper, head rest, instrument panel and so on since it covers very wide range of mechanical characteristics with low production costs. The process variables such as formulation of ingredients and mold temperature, mixing speed, etc. can affect the quality of produced polyurethane foams so that process conditions should be determined appropriately. In this study, foaming behaviors of semi-rigid polyurethane were investigated by conducting cup foam tests with 2 major process variables such as environmental temperature and blowing agent content.

• Transactions of Materials Processing
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• v.18 no.3
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• pp.256-261
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• 2009

Polyurethane has been one of the most important materials for automobile elastic parts such as bumper, head rest, instrument panel and so on since it covers very wide range of mechanical characteristics with low production costs. The processing variables such as formulation of ingredients and mold temperature, mixing speed, etc. can affect the quality of produced polyurethane foams so that process conditions should be determined appropriately. In this study, foaming behaviors of semi-rigid polyurethane were investigated by conducting cup foam tests with two major processing variables such as environmental temperature and blowing agent content. In addition, it was verified that processing conditions of real practice can be determined effectively by considering foaming characteristics obtained by the cup foam tests.

• Composites Research
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• v.34 no.1
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• pp.16-22
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• 2021

Polyurethane foam (PUF) can be manufactured in soft, semi-rigid, and hard forms, so it is used in various fields industrially. Among them, rigid PUF has excellent mechanical properties and low thermal conductivity, and is used as a thermal insulation material for buildings and as a cold insulation material in the natural gas transportation field. In this field, there is a steady demand on higher mechanical strength and lower thermal conductivity. In this study, a rigid PUF was manufactured, and the microstructure and physical properties were studied according to the impeller type (propeller, dispersed turbine) of the agitator. Through FE-SEM and Micro-CT analysis, it was confirmed that the average pore size of the foam manufactured with the dispersed turbine was 21.5% smaller than that of the pore made by the propeller. The compressive strength was improved by 15.4%, and the thermal conductivity decreased by 3.1% in the foam with small pores. This result can be utilized for fabricating PUF composites.

• Polymer(Korea)
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• v.34 no.1
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• pp.8-13
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• 2010

The physical properties of polymeric foams depend on the density of foams, physical properties of base polymers, the content of open cells, and cell structures including the size and its distribution, the shape of cell, and the thickness of skin layer. The foam density is affected by the chemistry of raw materials, the concentration of crosslinking agent and the blowing agent as well as the operating parameters during production process. In this study, the basic formulations of foams are composed of polyester polyol, MDI, amine catalyst, tin catalyst, silicone surfactant, and water. Cross-linking density of polyurethane was increased by using chain extenders. Also, the mechanical properties of polyurethane foam were improved by using the inorganic fillers (silica 1,2 and talc 1,2) having different $SiO_2$ contents and particle sizes. We investigated the properties of modulus, tensile strength, compressive strength and hardness of foams obtained by changing kind of inorganic filler and chain extender, and observed the distribution of inorganic filler as well as variation of cell size within the foams by electron microscopy.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2001.04a
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• pp.1117-1120
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• 2001

Chemical mechanical planarization(CMP) has emerged as the planarization technique of choice in both front-end and back-end integrated circuit manufacturing. Conventional CMP process utilize a polyurethane polishing pad and liquid chemical slurry containing abrasive particles. There have been serious problems in CMP in terms of repeatability and defects in patterned wafers. Since IBM's official announcement on Copper Dual Damascene(Cu2D) technology, the semiconductor world has been engaged in a Cu2D race. Today, even after~3years of extensive R&D work, the End-of-Line(EOL) yields are still too low to allow the transition of technology to manufacturing. One of the reasons behind this is the myriad of defects associated with Cu technology. Especially, dishing and erosion defects increase the resistance because they decrease the interconnection section area, and ultimately reduce the lifetime of the semiconductor. Methods to reduce dishing & erosion have recently been interface hardness of the pad, optimization of the pattern structure as dummy patterns. Dishing & erosion are initially generated an uneven pressure distribution in the materials. These defects are accelerated by free abrasive and chemical etching. Therefore, it is known that dishing & erosion can be reduced by minimizing the abrasive concentration. Minimizing the abrasive concentration by using Ce$O_2$ is the best solution for reducing dishing & erosion and for removal rate. This paper introduce dishing & erosion generating mechanism and a method for developing a semi-rigid abrasive pad to minimize dishing & erosion during CMP.

• Journal of the Korean Society for Precision Engineering
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• v.18 no.12
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• pp.192-199
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• 2001

Chemical mechanical planarization (CMP) has emerged as the planarization technique of choice in both front-end and back-end integrated circuit manufacturing. Conventional CMP process utilize a polyurethane polishing pad and liquid chemical slurry containing abrasive particles. There hale been serious problems in CMP in terms of repeatability and deflects in patterned wafers. Especial1y, dishing and erosion defects increase the resistance because they decrease the interconnection section area, and ultimately reduce the lifetime of the semiconductor. Methods to reduce dishing & erosion have recently been interface hardness of the pad, optimization of the pattern structure as dummy patterns. Dishing & erosion are initially generated an uneven pressure distribution in the materials. These defects are accelerated by free abrasives and chemical etching. Therefore, it is known that dishing & erosion can be reduced by minimizing the abrasive concentration. Minimizing the abrasive concentration by using CeO$_2$is the best solution for reducing dishing & erosion and for removal rate. This paper introduce dishing & erosion generating mechanism and a method fur developing a semi-rigid abrasive pad to minimize dishing & erosion during CMP.