• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.1053-1056
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• 2003

Progress in light emitting materials is presented. New polymers based on the Spiro concept show encouraging properties in electroluminescence performance and lifetime. The spiro-polymers can be tailor made to fit the RGB color requirements of a full color display. This class of materials showed recently very promising performance for white emission as well. They are readily soluble, show excellent thermal stability and can be processed by printing or through simple synthetic modification by photolithography technology.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.3
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• pp.136-145
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• 2006

Two major processing technologies of GaAs HBT and pHEMT have been released in production at Win Semiconductors corp. to address the strong demands of power amplifiers and switches for both handset and WLAN communications markets. Excellent performance with low processing cost and die shrinkage features is reported from the manufactured MMICs. With the stringent tighter manufacturing quality control WIN has successfully become one of the major pure open foundry house to serve the communication industries. The advancing of both technologies to include E/D-pHEMTs and BiHEMTs likes for multifunctional integration of PA, LNA, switch and logics is also highlighted.

• Proceedings of the Korean Vacuum Society Conference
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• 2006.02a
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• pp.110-110
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• 2006

• Proceedings of the Korean Vacuum Society Conference
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• 2006.08a
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• pp.133-133
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• 2006

• Proceedings of the Korean Vacuum Society Conference
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• 2006.02a
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• pp.148-148
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• 2006

• Journal of IKEEE
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• v.25 no.3
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• pp.578-583
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• 2021

This paper describes acceleration tests for reliability of semiconductors. It also describes AEC-Q100, international test standard for reliability of automotive semiconductors. Semiconductors can be used for dozens of years. So acceleration tests are essential to test potential problems over whole period of product where test time is minimized by applying intensive stresses. AEC-Q100 is a typical acceleration test in automotive semiconductors, and it is designed to find various failures in semiconductors and to analyze their causes of occurance. So it finds many problems in design and fabrication as well as it predicts lifetime and reliability of semiconductors. AEC-Q100 consists of 7 test groups such as accelerated environmental stress tests, accelerated lifetime simulation tests, package assembly integrity tests, die fabrication reliability tests, electrical verification tests, defect screening tests, and cavity package integrity tests. It has 4 grades from grade 0 to grade 3 based on operational temperature. AEC-Q101, Q102, Q103, Q104, and Q200 are applied to discrete semiconductors, optoelectronic semiconductors, sensors, multichip modules, and passive components, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.86.1-86.1
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• 2015

As the feature size of Si-based semiconductor shrinks to nanometer scale, we are facing to the problems such as short channel effect and leakage current. One of the solutions to cope with those issues is to bring III-V compound semiconductors to the semiconductor structures, because III-V compound semiconductors have much higher carrier mobility than Si. However, introduction of III-V semiconductors to the current Si-based manufacturing process requires great challenge in the development of process integration, since they exhibit totally different physical and chemical properties from Si. For example, epitaxial growth, surface preparation and wet etching of III-V semiconductors have to be optimized for production. In addition, oxidation mechanisms of III-V semiconductors should be elucidated and re-growth of native oxide should be controlled. In this study, surface preparation methods of various III-V compound semiconductors such as GaAs, InAs, and GaSb are introduced in terms of i) how their surfaces are modified after different chemical treatments, ii) how they will be re-oxidized after chemical treatments, and iii) is there any effect of surface orientation on the surface preparation and re-growth of oxide. Surface termination and behaviors on those semiconductors were observed by MIR-FTIR, XPS, ellipsometer, and contact angle measurements. In addition, photoresist stripping process on III-V semiconductor is also studied, because there is a chance that a conventional photoresist stripping process can attack III-V semiconductor surfaces. Based on the Hansen theory various organic solvents such as 1-methyl-2-pyrrolydone, dimethyl sulfoxide, benzyl alcohol, and propylene carbonate, were selected to remove photoresists with and without ion implantation. Although SPM and DIO3 caused etching and/or surface roughening of III-V semiconductor surface, organic solvents could remove I-line photoresist without attack of III-V semiconductor surface. The behavior of photoresist removal depends on the solvent temperature and ion implantation dose.

• Proceedings of the Korean Vacuum Society Conference
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• 2004.08a
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• pp.267-267
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• 2004

• Proceedings of the Korean Magnestics Society Conference
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• 2003.06a
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• pp.262-262
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• 2003

Creating a new spin-based electronics (often called "spin-electronics" or "spintronics") is one of the hot topics in the current solid-state physics and electronics research. In order to utilize the spin degree of freedom in solids, particularly in semiconductors the current electronics is based on, we need to fabricate appropriate materials, understand and control the spin-dependent phenomena. In this ta1k, I will review the recent deve1opments of epitaxial ferromagnetic hetero structures based on semiconductors towards spintronics. This includes the semiconductor materials and hetero structures having high ferromagnetic transition temperature (III-V based alloy magnetic semiconductors, Mn-delta-doped magnetic semiconductors, and related heterostructures), spin-dependent transport and tunneling, and their device applications (tunneling magnetoresistance devices and three-terminal devices). Future issues and prospects will be also discussed.

• Proceedings of the Korean Vacuum Society Conference
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• 2006.08a
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• pp.132-132
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• 2006