• Journal of the Microelectronics and Packaging Society
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• v.30 no.4
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• pp.8-16
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• 2023

The importance of next-generation packaging technologies is being emphasized as a solution as the miniaturization of devices reaches its limits. To address the bottleneck issue, there is an increasing need for 2.5D and 3D interconnect pitches. This aims to minimize signal delays while meeting requirements such as small size, low power consumption, and a high number of I/Os. Hybrid bonding technology is gaining attention as an alternative to conventional solder bumps due to their limitations such as miniaturization constraints and reliability issues in high-temperature processes. Recently, there has been active research conducted on SiCN to address and enhance the limitations of the Cu/SiO₂ structure. This paper introduces the advantages of Cu/SiCN over the Cu/SiO₂ structure, taking into account various deposition conditions including precursor, deposition temperature, and substrate temperature. Additionally, it provides insights into the core mechanisms of SiCN, such as the role of Dangling bonds and OH groups, and the effects of plasma surface treatment, which explain the differences from SiO₂. Through this discussion, we aim to ultimately present the achievable advantages of applying the Cu/SiCN hybrid bonding structure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.216-216
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• 2009

This paper describes a novel processing technique for the fabrication of polymer-derived SiCN (silicone carbonitride) microstructures for extreme microelectromechanical system (MEMS) applications. A polydimethylsiloxane (PDMS) mold was formed on an SU-8 pattern using a standard UV photolithographic process. Next, the liquid precursor, polysilazane, was injected into the PDMS mold to fabricate free-standing SiCN microstructures. Finally, the solid polymer SiCN microstructure was cross-linked using hot isostatic pressure at $400^{\circ}C$ and 205 bar. The optimal pyrolysis and annealing conditions to form a ceramic microstructure capable of withstanding temperatures over $1400^{\circ}C$ were determined. Using the optimal process conditions, the fabricated SiCN ceramic microstructure possessed excellent characteristics includingshear strength (15.2 N), insulation resistance ($2.163{\times}10^{14}\;{\Omega}$, and BDV (1.2 kV, minimum). Since the fabricated ceramic SiCN microstructure has improved electrical and physical characteristics compared to bulk Si wafers, it may be applied to harsh environments and high-power MEMS applications such as heat exchangers and combustion chambers.

• Journal of Sensor Science and Technology
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• v.15 no.2
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• pp.148-152
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• 2006

This paper describes the fabrication of SiCN microstructures for super-high temperature MEMS using photopolymerization of pre-ceramic polymer. In this work, polysilazane liquide as a precursor was deposited on Si wafers by spin coating, microstructured and solidificated by UV lithography, and removed from the substrate. The resulting solid polymer microstructures were cross-linked under HIP process and pyrolyzed to form a ceramic of withstanding over $1400^{\circ}C$. Finally, the fabricated SiCN microstructures were annealed at $1400^{\circ}C$ in a nitrogen atmosphere. Mechanical characteristics of the SiCN microstructure with different fabrication process conditions were evaluated. The elastic modules, hardness and tensile strength of the SiC microstructure implemented under optimum process condtions are 94.5 GPa, 10.5 GPa and 11.7 N/min, respectively. Consequently, the SiCN microstructure proposed in this work is very suitable for super-high temperature MEMS application due to very simple fabrication process and the potential possiblity of sophisticated mulitlayer or 3D microstructures as well as its good mechanical properties.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.392-393
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• 2006

This paper describes the fabrication of SiCN microstructures for super-high temperature MEMS using photopolymerization of pre-ceramic polymer. In this work. polysilazane liquide as a precursor was deposited on Si wafers by spin coating. microstructured and solidificated by UV lithography. and removed from the substrate. The resulting solid polymer microstructures were cross-linked under HIP process and pyrolyzed to form a ceramic of withstanding over $1400^{\circ}C$. Finally, the fabricated SiCN microstructures were annealed at $1400^{\circ}C$ in a nitrogen atmosphere. Mechanical characteristics of the SiCN microstructure with different fabrication process conditions were evaluated. The elastic modules. hardness and tensile strength of the SiC microstructure implemented under optimum process conditions are 94.5 GPa, 10.5 GPa and 11.7 N/min, respectively. Consequently, the SiCN microstructure proposed in this work is very suitable for super-high temperature MEMS application due to very simple fabrication process and the potential possiblity of sophisticated multlayer or 3D microstructures as well as its good mechanical properties.

• Journal of Sensor Science and Technology
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• v.15 no.1
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• pp.53-57
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• 2006

This paper describes a novel processing technique for fabrication of polymer-derived SiCN (silicone carbonitride) microstructures for super-temperature MEMS applications. PDMS (polydimethylsiloxane) mold is fabricated on SU-8 photoresist using standard UV photolithographic process. Liquid precursor is injected into the PDMS mold. Finally, solid polymer structure is cross-linked using HIP (hot isostatic pressure) at $400^{\circ}C$, 205 bar. Optimum pyrolysis and annealing conditions are determined to form a ceramic microstructure capable of withstanding over $1400^{\circ}C$. The fabricated SiCN ceramic microstructure has excellent characteristics, such as shear strength (15.2 N), insulation resistance ($2.163{\times}10^{14}{\Omega}$) and BDV (min. 1.2 kV) under optimum process condition. These fabricated SiCN ceramic microstructures have greater electric and physical characteristics than bulk Si wafer. The fabricated SiCN microstructures would be applied for supertemperature MEMS applications such as heat exchanger and combustion chamber.

• ETRI Journal
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• v.26 no.3
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• pp.257-261
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• 2004

We grew amorphous SiCN films by pulsed laser deposition using mixed targets. The targets were fabricated by compacting a mixture of SiC and $SiC-{Si_3}{N_4}$ powders. We controlled the film stoichiometry by varying the mixing ratio of the target and the target-to-substrate distance. The mixing ratio of the target had a dominant effect on the film composition. We consider the structures of the SiCN films deposited using 30~70 wt.% SiC in the target to be an intermediate phase of SiC and $SiN_x$. This provides the possibility of growing homogeneous SiCN films with a mixed target at a moderate target-to-substrate distance.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04b
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• pp.125-128
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• 2004

In this paper, a novel processing technique for fabrication of high-temperature MEMS based on polymer-derived SiCN microstructures is described. PDMS molds are fabricated on SU-8 photoresist using standard UV-photolithographic processes. Liquid precursors are injected into the PDMS mold. And then, the resulting solid polymer structures are crosslinked under isostatic pressure, and pyrolyzed to form a ceramic capable of withstanding over $1500^{\circ}C$. These fabricated SiCN structures would be applied for high-temperature applications, such as heat exchanger and combustion chamber.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.376-379
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• 2003

In this paper, a novel processing technique for fabrication of high-temperature MEMS based on polymer-derived SiCN microstructures is described. PDMS molds are fabricated on SU-8 photoresist using standard UV-photolithographic processes. Liquid precursors are injected into the PDMS mold. And then, the resulting solid polymer structures are crosslinked under isostatic pressure, and pyrolyzed to form a ceramic capable of withstanding over $1500^{\circ}C$. These fabricated SiCN structures would be applied for high-temperature applications, such as heat exchanger and combustion chamber.

• Composites Research
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• v.33 no.6
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• pp.395-400
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• 2020

In this paper, we manufactured silsesquiaznae (SSQZ)-coated carbon nanotube (CNT) surface heating elements, which allowed stable heating at high temperatures. The prepared composite sheet was confirmed by FE-SEM that the SSQZ fully coated the surface of CNT sheet. Furthermore, it was also confirmed that the silicon carbonitride (SiCN) ceramic formed by heat treatment of 800℃ have no defects found and maintain intact structure. The CNT/SiCN composite sheet was able to achieve higher thermal stability than raw CNT sheets in both nitrogen and air atmosphere. Finally, the CNT/SiCN composite sheet was possible to heat up at a temperature of over 700℃ in the atmosphere, and the re-heating was successfully operated after cooling.

• Proceedings of the Materials Research Society of Korea Conference
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• 2005.05a
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• pp.160-160
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• 2005