• Journal of the Semiconductor & Display Technology
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• v.2 no.1
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• pp.21-24
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• 2003

Sludged silicon powders that are generated during silicon ingot slicing process have potential usage as silicon source in fabricating silicon carbide powders by adding carbon. A thermodynamic calculation is performed to consider a plausible formation condition for the silicon carbide powders. A thin silicon oxide layer around silicon powder is sufficient to supply equilibrium oxygen partial pressure at the formation temperature($1400^{\circ}C$) of the silicon carbide in the Si-C-O ternary system. Formation of silicon carbide by using the sludged silicon powders is more efficient than by using silicon oxide powders.

• Journal of Electrochemical Science and Technology
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• v.12 no.3
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• pp.317-322
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• 2021

Silicon (Si) has been considered as a promising anode material because of its abundant reserves in nature, low lithium ion (Li⁺) intercalation/de-intercalation potential (below 0.5 V vs. Li/Li⁺) and high theoretical capacity of 4200 mA h/g. In this paper, we prepared a silicon-based (Si-based) anode material containing a small amount of silicon carbide by using magnesiothermic coreduction of silica and hexachlorobenzene. Because of good conductivity of silicon carbide, the cycle performance of the silicon-based anode materials containing few silicon carbide is greatly improved compared with pure silicon. The raw materials were formulated according to a silicon-carbon molar ratio of 10:0, 10:1, 10:2 and 10:3, and the obtained products were purified and tested for their electrochemical properties. After 1000 cycles, the specific capacities of the materials with silicon-carbon molar ratios of 10:0, 10:1, 10:2 and 10:3 were still up to 412.3 mA h/g, 970.3 mA h/g, 875.0 mA h/g and 788.6 mA h/g, respectively. Although most of the added carbon reacted with silicon to form silicon carbide, because of the good conductivity of silicon carbide, the cycle performance of silicon-based anode materials was significantly better than that of pure silicon.

• Journal of the Korean Solar Energy Society
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• v.39 no.1
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• pp.1-9
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• 2019

Light induced degradation is one of the major research challenges of hydrogenated amorphous silicon related thin film silicon solar cells. Amorphous silicon shows creation of metastable defect states, originating from elevated concentration of dangling bonds during light exposure. The metastable defect states work as recombination centers, and mostly affects quality of intrinsic layer in solar cells. In this paper we present results of light induced degradation in thin film silicon solar cells and discussion on physical origin, mechanism and practical solutions of light induced degradation in thin film silicon solar cells. In-situ light-soaking IV measurement techniques are presented. We also present thin film silicon material with silicon nano-quantum dots embedded within amorphous matrix, which shows superior stability during light-soaking. Our results suggest that solar cell using silicon nano-quantum dots in abosrber layer shows superior stability under light soaking, compared to the conventional amorphous silicon solar cell.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.4
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• pp.336-346
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• 1994

We studied the reaction between silicon and carbon. Silicon granules and silicon with 0.2 wt% carbon powders were prepared for sample and then they were heated up to the $1450^{\circ}C, 1550^{\circ}C, 1650^{\circ}C, 1700^{\circ}C$ and were dwelled 1 hr and 4 hrs, respectively. we studied the change of morphologies of molten silicon and the formation of SiC following the reaction withcarbon using optical microscope, SEM, and XRD. Above the melting point of silicon, oxygens are precipitated during the decomposition of quartz used crucible. SiO formed from the reaction between molten silicon and precipitated oxygen evaporated and made the surface defects. SiC were formed with the reaction between the unreacted carbon and molten silicon. Polytype of the SiC formed at the solidification interface was ${\alpha}-SiC$.

• Transactions on Electrical and Electronic Materials
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• v.9 no.6
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• pp.231-236
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• 2008

B, P, and Cs ions were implanted with various parameters into silicon nitride layers prepared by LPCVD. In order to get the maximum impurity concentration at the silicon nitride surface, a high temperature oxide (HTO) buffer layers was deposited prior to the implantation. Alkali ion and pH sensing properties of the layers were investigated with an electrolyte-insulator-silicon (EIS) structure using high frequency capacitance-voltage (HF-CV) measurements. The ion sensing properties of implanted silicon nitrides were compared to those of as-deposited silicon nitride. Band Cs co-implanted silicon nitrides showed a pronounced difference in pH and alkali ion sensing properties compared to those of as-deposited silicon nitride. B or P implanted silicon nitrides in contrast showed similar ion sensitivities like those of as-deposited silicon nitride.

• Journal of Integrative Natural Science
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• v.2 no.1
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• pp.37-40
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• 2009

Synthesis and characterization of alkyl-capped nanocrystalline silicon (R-n-Si) have been achieved from the reaction of silicontetrachloride with magnesiumsilicide. Surface of silicon nanocrystal has been derivatized with various alkyl groups (R=methyl, n-butyl, etc.). Silicon nanoparticles have been also obtained by the sonication of luminescent porous silicon. Former exhibits an emission band at 360 nm, but latter exhibits an emission band at 680 nm. In this study very sensitive detection of TNT (2,4,6-trinitrotoluene), DNT (2,4-dinitrotoluene), NB (nitrobenzene), and PA (picric acid) has been achieved in gas phase with porous silicon using photoluminescence quenching of the silicon crystallites as a transduction mode. Porous silicon are electrochemically etched from crystalline silicon wafers in an aqueous solution of hydrofluoric acid. We have characterized these silicon nanoparticles by Luminescence Spectrometer (LS 55).

• Journal of Integrative Natural Science
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• v.6 no.3
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• pp.170-175
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• 2013

Silicon nanowires were detached and obtained from silicon nanowire arrays on silicon substrate using a ultrasono-method. Silicon nanowire arrays on silicon substrate were prepared with an electroless metal assisted etching of p-type silicon. The etching solution was an aqueous HF solution containing silver nitrate. SEM observation shows that well-aligned nanowire arrays perpendicular to the surface of the silicon substrate were produced. After sonication of silicon nanowire array, an individual silicon nanowire was confirmed by FESEM. Optical characteristics of SiNWs were measured by FT-IR spectroscopy. The surface of SiNWs are terminated with hydrogen.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.23 no.3
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• pp.119-123
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• 2013

Most of the world's solar cells in photovoltaic industry are currently fabricated using crystalline silicon. Czochralski-grown silicon crystals are more expensive than multicrystalline silicon crystals. The future of solar-grade Czochralski-grown silicon crystals crucially depends on whether it is usable for the mass-production of high-efficiency solar cells or not. It is generally believed that the main obstacle for making solar-grade Czochralski-grown silicon crystals a perfect high-efficiency solar cell material is presently light-induced degradation problem. In this work, the substitution of boron with gallium in p-type silicon single crystal is studied as an alternative to reduce the extent of lifetime degradation. The diamond-wire sawing technology is employed to slice the silicon ingot. In this paper, the quality of the diamond wire-sawn gallium-doped silicon wafers is studied from the chemical, electrical and structural points of view. It is found that the characteristic of gallium-doped silicon wafers including texturing behavior and surface metallic impurities are same as that of conventional boron-doped Czochralski crystals.

• Journal of the Korean Ceramic Society
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• v.40 no.9
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• pp.832-836
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• 2003

Multi-layer ceramic composites were prepared by tape casting followed by hot pressing using silicon nitride layer with silicon nitride whiskers, silicon nitride layer with silicon carbide particles and boron nitride-alumina layer. The whiskers were aligned during the casting. As the whisker content of the silicon nitride layer was increased up to 10 wt％, the flexural strength of the multi-layer composite was increased. However, further increase of the whisker content in the layer resulted in a rapid decrease of the strength of the composite. The results suggest that the strength of multi-layer ceramic composite showing non-catastrophic failure behavior can be significantly improved by incorporating the aligned whiskers in the layers.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.110-110
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• 2011

The nanomechanical properties of fully lithiated and unlithiated silicon nanowire deposited on silicon substrate have been studied with atomic force microscopy. Silicon nanowires were synthesized using the vapor-liquid-solid process on stainless steel substrates using Au catalyst. Fully lithiated silicon nanowires were obtained by using the electrochemical method, followed by drop-casting on the silicon substrate. The roughness, derived from a line profile of the surface measured in contact mode atomic force microscopy, has a smaller value for lithiated silicon nanowire and a higher value for unlithiated silicon nanowire. Force spectroscopy was utilitzed to study the influence of lithiation on the tip-surface adhesion force. Lithiated silicon nanowire revealed a smaller value than that of the Si nanowire substrate by a factor of two, while the adhesion force of the silicon nanowire is similar to that of the silicon substrate. The Young's modulus obtained from the force-distance curve, also shows that the unlithiated silicon nanowire has a relatively higher value than lithiated silicon nanowire due to the elastically soft amorphous structures. The frictional forces acting on the tip sliding on the surface of lithiated and unlithiated silicon nanowire were obtained within the range of 0.5-4.0 Hz and 0.01-200 nN for velocity and load dependency, respectively. We explain the trend of adhesion and modulus in light of the materials properties of silicon and lithiated silicon. The results suggest a useful method for chemical identification of the lithiated region during the charging and discharging process.