• Journal of Korean Society of Occupational and Environmental Hygiene
• /
• v.21 no.3
• /
• pp.177-183
• /
• 2011

Occupational exposure to silicon carbide dust of manufacturing industries has seldom been evaluated in Korea. Accordingly, we evaluated various silicon carbide dust concentrations in the breathing zone of workers between May 2010 and July 2010. To compare silicon carbide dust concentrations, three dust samplers including the Institute of Occupational Medicine (IOM) sampler, 37mm cassette sampler, and Aluminum cyclone sampler were used. A total of 5 manufacturing industries producing abrasive and refractory materials using silicon carbide were investigated. The geometric mean concentrations were 2.04, 0.97, and $0.48mg/m^3$ in inhalable, total and respirable silicon carbide dust, respectively. The geometric mean concentrations of silicon carbide in abrasive material manufacturing industries were slightly higher than that of refractory manufacturing industries, and finishing operations were higher than that of other operations. It was found that the results of exposure assessment in airborne dust at manufacturing industries using silicon carbide in Korea showed exceeding rate to American Conference of Governmental Industrial Hygienists Threshold Limit Value ($3mg/m^3$) was 10% in respirable dust samples. Therefore, with the consideration of the close relationship between smaller dust size and the occurrence of occupational respiratory diseases, it is suggested to promulgate the new occupational exposure limit for respirable silicon carbide dust.

• Journal of the Semiconductor & Display Technology
• /
• v.2 no.1
• /
• pp.21-24
• /
• 2003

Sludged silicon powders that are generated during silicon ingot slicing process have potential usage as silicon source in fabricating silicon carbide powders by adding carbon. A thermodynamic calculation is performed to consider a plausible formation condition for the silicon carbide powders. A thin silicon oxide layer around silicon powder is sufficient to supply equilibrium oxygen partial pressure at the formation temperature($1400^{\circ}C$) of the silicon carbide in the Si-C-O ternary system. Formation of silicon carbide by using the sludged silicon powders is more efficient than by using silicon oxide powders.

• Tribology and Lubricants
• /
• v.11 no.4
• /
• pp.21-27
• /
• 1995

The effects of interface boundary strength on wear and wear transition during sliding have been investigated in silicon carbide ceramics. Three different microstructures, i.e., solid state sintered silicon carbide, liquid phase sintered silicon carbide and liquid phase sintered silicon carbide composite reinforced with TiB$_{2}$ particulates, were designed by hot pressing. Examinations of crack patterns and fracture modes indicated that interface boundaries were relatively strong between silicon carbide grains in the solid state sintered silicon carbide, intermediate in the liquid phase sintered silicon carbide and weak between silicon carbide grains and TiB$_{2}$ particles in the composite. Wear data and examinations of worn surfaces revealed that the wear behavior of these silicon carbide ceramics could be significantly affected by the interface strength. In the solid state sintered silicon carbide, the wear occurred by a grooving process. In the liquid phase sintered silicon carbide and composite, on the other hand, an abrupt transition in wear mechanism from initial grooving to grain pull-out process occurred during the test. The transition occurred significantly earlier in the composite than in the carbide.

• Journal of Electrochemical Science and Technology
• /
• v.12 no.3
• /
• pp.317-322
• /
• 2021

Silicon (Si) has been considered as a promising anode material because of its abundant reserves in nature, low lithium ion (Li⁺) intercalation/de-intercalation potential (below 0.5 V vs. Li/Li⁺) and high theoretical capacity of 4200 mA h/g. In this paper, we prepared a silicon-based (Si-based) anode material containing a small amount of silicon carbide by using magnesiothermic coreduction of silica and hexachlorobenzene. Because of good conductivity of silicon carbide, the cycle performance of the silicon-based anode materials containing few silicon carbide is greatly improved compared with pure silicon. The raw materials were formulated according to a silicon-carbon molar ratio of 10:0, 10:1, 10:2 and 10:3, and the obtained products were purified and tested for their electrochemical properties. After 1000 cycles, the specific capacities of the materials with silicon-carbon molar ratios of 10:0, 10:1, 10:2 and 10:3 were still up to 412.3 mA h/g, 970.3 mA h/g, 875.0 mA h/g and 788.6 mA h/g, respectively. Although most of the added carbon reacted with silicon to form silicon carbide, because of the good conductivity of silicon carbide, the cycle performance of silicon-based anode materials was significantly better than that of pure silicon.

• Journal of the Korean Ceramic Society
• /
• v.51 no.6
• /
• pp.539-543
• /
• 2014

Foam type porous silicon carbide ceramics were fabricated by a polymer replica method using polyurethane foam, carbon black, phenol resin, and silicon powder as raw materials. The influence of the C/Si mole ratio of the ceramic slurry and heat treatment temperature on the porous silicon carbide microstructure was investigated. To characterize the microstructure of porous silicon carbide ceramics, BET, bulk density, X-ray Powder Diffraction (XRD), and Scanning Electron Microscope (SEM) analyses were employed. The results revealed that the surface area of the porous silicon carbide ceramics decreases with increased heat treatment temperature and carbon content at the $2^{nd}$ heat treatment stage. The addition of carbon to the ceramic slurry, which was composed of phenol resin and silicon powder, enhanced the direct carbonization reaction of silicon. This is ascribed to a consequent decrease of the wetting angles of carbon to silicon with increasing heat treatment temperature.

• Journal of the Korean Ceramic Society
• /
• v.17 no.3
• /
• pp.145-150
• /
• 1980

This paper deals with the clay-bonded silicon carbide refractory saggars in terms of its oxidation resistance. Oxidation is one of the major causes of failure in silicon carbide refractory saggars during its services. Various anti-oxidation additives are coated on or added into silicon carbide refractories and their effects are studied while other conditions are equal. Several conclusions can be derived for optimum anti-oxidation additive as: 1. The additive should wet each silicon carbide grain completely during its firing. 2. The additive should have high viscosity at temperatures around $1, 350^{\circ}C$ where most silicon carbide refractory saggars are being used. 3. The additive should have ability to absorb or desorb oxygen depending on the local atmosphere inside of saggar during it service. 4. The addition should be kept as minimum as possible to prevent any "sweating" or "bloating" phenomena.ing" phenomena.mena.

• Journal of the Korean Ceramic Society
• /
• v.45 no.9
• /
• pp.518-523
• /
• 2008

The mechanical properties of silicon carbide deposited by chemical vapor deposition process onto a graphite substrate are studied using nanoindentation techniques. The silicon carbide coating was fabricated in a chemical vapor deposition process with different microstructures and thicknesses. A nanoindentation technique is preferred because it provides a reliable means to measure the mechanical properties with continuous load-displacement recording. Thus, a detailed nanoindentation study of silicon carbide coatings on graphite structures was conducted using a specialized specimen preparation technique. The mechanical properties of the modulus, hardness and toughness were characterized. Silicon carbide deposited at $1300^{\circ}C$ has the following values: E=316 GPa, H=29 GPa, and $K_c$=9.8 MPa $m^{1/2}$; additionally, silicon carbide deposited at $1350^{\circ}C$ shows E=283 GPa, H=23 GPa, and $K_c$=6.1 MPa $m^{1/2}$. The mechanical properties of two grades of SiC coating with different microstructures and thicknesses are discussed.

• Structural Engineering and Mechanics
• /
• v.64 no.3
• /
• pp.329-337
• /
• 2017

This study concerns the vibrational behavior of multi-walled nested silicon-carbide and carbon nanotubes using the finite element method. The beam elements are used to model the carbon-carbon and silicon-carbon bonds. Besides, spring elements are employed to simulate the van der Waals interactions between walls. The effects of nanotube arrangement, number of walls, geometrical parameters and boundary conditions on the frequencies of nested silicon-carbide and carbon nanotubes are investigated. It is shown that the double-walled nanotubes have larger frequencies than triple-walled nanotubes. Besides, replacing silicon carbide layers with carbon layers leads to increasing the frequencies of nested silicon-carbide and carbon nanotubes. Comparing the first ten mode shapes of nested nanotubes, it is observed that the mode shapes of armchair and zigzag nanotubes are almost the same.

• Journal of the Korean Ceramic Society
• /
• v.39 no.7
• /
• pp.693-698
• /
• 2002

Reaction-Bonded Silicon Carbide (RBSC) Ceramics were fabricated which satisfies the maximum packing density of silicon carbide skeleton in the green compacts. Such a high packing density induced incomplete infiltration during reaction-sintering; forms linear void around the interface of large alpha silicon carbide powders. During reaction-sintering, the limited extraction and entrapped gas induced by residue oxide was considered to be a reason of linear void formation. In order to improve infiltration behavior in the highly packed preform, the pre-treatment methods for residue oxide removal were proposed.

• The Korean Journal of Ceramics
• /
• v.4 no.3
• /
• pp.245-248
• /
• 1998

Porous carbon fiber composites (CFCs) having variable specific surface area ranging 35~1150 $\m^2$/g were reacted to produce silicon carbide fiber composites with SiO vapor generated from a mixture of Si and $SiO_2$ at 1673 K for 2 h under vacuum. Part of SiO vapor generated during conversion process condensed on to the converted fiber surface as amorphous silica. Chemical analysis of the converted CFCs resulting from reaction showed that the products contained 27~90% silicon carbide, 7~18% amorphous silica and 3~63% unreacted carbon, and the composition depended on the specific carbide, 7~18% amorphous silica and 3~63% unreacted carbon, and the composition depended on the specific surface area of CFCs. CFC of higher specific surface area yielded higher degree of conversion of carbon to silicon and conversion products of lower mechanical strength due to occurrence of cracks in the converted caron fiber. As the conversion of carbon to silicon carbide proceeded, pore size of converted CFCs increased as a result of growth of silicon carbide crystallites, which is also linked to the crack formation in the converted fiber.