• Title/Summary/Keyword: Slit dielectric barrier

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Corona Discharge and Ozone Generation Characteristics of a Slit Dielectric Barrier Discharge Type Plasma Reactor with a Third Electrode (3전극이 부설된 틈새 장벽방전형 플라즈마장치의 코로나 방전 및 오존발생 특성)

  • Moon, Jae-Duk;Jung, Jae-Seung
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.56 no.3
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    • pp.583-587
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    • 2007
  • Corona discharge and ozone generation characteristics of a slit dielectric barrier discharge type wire-plate plasma reactor with a third electrode have been investigated. When a third electrode is installed on a slit of the slit barrier, where an intense corona discharge occurs, it is found that a significantly increased ozone output could be obtained. This, however, indicates that the third electrode can activate the corona discharges both of the discharge wire and the slit of the slit barrier in the plasma reactor. As a result, a thin stainless wire, used as the third electrode has a strong effect to influence the corona discharge of the slit and corona wire, especially to the negative corona discharge. Higher amounts of the output ozone and ozone yield, about 1.27 and 1.29 times for the negative corona discharge, can be obtained with the third electrode, which reveals the effectiveness of the third electrode.

Discharge and Ozone Generation Characteristics of a Wire-Plate Discharge System with a Slit Barrier (슬릿 유전체 장벽을 갖는 선대 평판형 방전장치의 방전 및 오존 발생특성)

  • Moon Jae-Duk;Jung Jae-Seung
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.54 no.9
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    • pp.421-426
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    • 2005
  • A wire-plate discharge system with a slit barrier has been proposed and investigated experimentally by focusing on the discharges on the slit barrier and ozone generation characteristics. This wire-plate discharge system with a slit barrier can generate an intensive corona discharges, and produce corona discharge twice, once from the corona wire electrode and second time from the surface and the slits of the slit dielectric barrier. As a result this propose wire-plate discharge system with the slit barrier can produce greatly increased ozone than without the slit barrier. This type of wire-plate discharge system with the slit barrier could be used for effective ozone generation as a means with retard to the removal of pollutant gas

Effective Ozone Generation Utilizing a Slit Barrier (틈새 장벽을 이용한 효과적인 오존 발생)

  • Moon, Jae-Duk;Jung, Jae-Seung
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.55 no.6
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    • pp.323-327
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    • 2006
  • In this paper a new wire-wire discharge system with a slit dielectric harrier has been proposed, and, its corona discharge and ozone generation characteristics have been investigated experimentally. When the slit mica barrier is installed between corona wires, instead of the grounded plate electrode, a significant increase in the generation of ozone, about 2.2 times higher than that of the conventional ones without the slit harrier, could be obtained. Photographs show that this type of discharge system with a slit barrier was found to produce a corona discharge twice, once from the upper and bottom corona wires, and. again from both sides of surfaces and slits of the slit barrier. As a result, the proposed discharge system has the potential to increase significantly ozone production and it may be useful as an effective means for removing pollutant gases.

A Study on the Dielectric Characteristics and Microstructure of $Si_3N_4$ Metal-Insulator-Metal Capacitors ($Si_3N_4$를 이용한 금속-유전체-금속 구조 커패시터의 유전 특성 및 미세구조 연구)

  • 서동우;이승윤;강진영
    • Journal of the Korean Vacuum Society
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    • v.9 no.2
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    • pp.162-166
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    • 2000
  • High quality $Si_3N_4$ metal-insulator-metal (MIM) capacitors were realized by plasma enhanced chemical vapor deposition (PECVD). Titanium nitride (TiN) adapted as a diffusion barrier reduced the interfacial reaction between $Si_3N_4$ dielectric layer and aluminum metal electrode showing neither hillock nor observable precipitate along the interface. The capacitance and the current-voltage characteristics of the MIM capacitors showed that the minimum thickness of $Si_3N_4$ layer should be limited to 500 $\AA$ under the present process, below which most of the capacitors were electrically shorted resulting in the devastation of on-wafer yield. According to the transmission electron microscopy (TEM) on the cross-sectional microstructure of the capacitors, the dielectric breakdown was caused by slit-like voids formed at the interface between TiN and $Si_3N_4$ layers when the thickness of $Si_3N_4$ layer was less than 500 $\AA$. Based on the calculation of thermally-induced residual stress, the formation of voids was understood from the mechanistic point of view.

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