• 한국지반공학회논문집
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• 제18권4호
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• pp.249-256
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• 2002

Slurry trench의 안정성은 안정액의 유압이 filter cake 막을 통하여 trench 벽에 전달됨으로서 확보될 수가 있다. 지반조건의 영향에 따른 slurry trench 공법에서 주변 공극수압의 변화를 수치해석(FEM)으로 추적하였다. 이러한 주변 공극수압의 변화 요인으로는 안정액의 밀도, filter cake의 상태, 토질조건, 시간, trench 심도, 주변지하수위로 조사되었으며, 가장 큰 영향력을 보인 요인으로는 토질조건과 filter cake 상태로 나타났다.

• 한국윤활학회:학술대회논문집
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• 한국윤활학회 2002년도 제35회 춘계학술대회
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• pp.272-278
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• 2002

Recently, STI(Shallow Trench Isolation) process has attracted attention for high density of semiconductor device as a essential isolation technology. In this paper, the effect of pattern density, trench width and selectivity of slurry on dishing in STI CMP process was investigated by using specially designed isolation pattern. As trench width increased, the dishing tends to increase. At $20{\mu}m$ pattern size, the dishing was decreased with increasing pattern density Low selectivity slurry shows less dishing at over $160{\mu}m$ trench width, whereas high selectivity slurry shows less dishing at below $160{\mu}m$ trench width.

• 한국지반공학회논문집
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• 제18권4호
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• pp.239-248
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• 2002

안정액(bentonite slurry)을 이용한 지하연속벽의 건설은 굴착된 trench 내에서 안정액이 침투케익과 표면케익을 포함한 불투수막을 형성함으로서 trench 의 안정성을 유지할 수가 있다. 그러므로 구조용 지하연속벽 건설이나 폐기물 매립장의 차수용 연속벽 건설시 지반조건 및 주변여건의 변화에 의하여 여러 가지 문제가 발생 될 수 있다. 본 논문은 안정액 유출과 불투수케익 형성과정을 대형실험으로 모델링하여 그 결과가 slurry trench 안정성에 미치는 영향을 평가하고, 현장조건에 적합한 설계절차를 제시하였다.

• 한국지반공학회:학술대회논문집
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• 한국지반공학회 2005년도 춘계 학술발표회 논문집
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• pp.1455-1460
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• 2005

This paper presents the results of an experimental study on the ground deformation by trench excavation for Diaphragm Wall construction. The model tests are performed to investigate the back ground deformation by lowering of slurry level in trench after excavating. Through these, the deformation characteristic of the back ground due to stress release of excavated space was investigated. This study considered relative density of soil mass and the distance between trench and surcharge. An experiment was performed in order to observe the failure pattern of a slurry-supported trench excavated in sandy ground. From model tests, in order to predict reasonably the deformation behavior of the adjacent ground due to the underground excavation, it is significantly recommended that the ground settlement by trench excavation should be considered.

• Transactions on Electrical and Electronic Materials
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• 제3권4호
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• pp.5-9
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• 2002

Chemical mechanical polishing (CMP) has become the preferred planarization method for multilevel interconnect technology due to its ability to achieve a high degree of feature level planarity. Especially, to achieve the higher density and greater performance, shallow trench isolation (STI)-CMP process has been attracted attention for multilevel interconnection as an essential isolation technology. Also, it was possible to apply the direct STI-CMP process without reverse moat etch step using high selectivity slurry (HSS). In this work, we determined the process margin with optimized process conditions to apply HSS STI-CMP process. Then, we evaluated the reliability and reproducibility of STI-CMP process through the optimal process conditions. The wafer-to-wafer thickness variation and day-by-day reproducibility of STI-CMP process after repeatable tests were investigated. Our experimental results show, quite acceptable and reproducible CMP results with a wafer-to-wafer thickness variation within 400$\AA$.

• 한국전기전자재료학회논문지
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• 제15권10호
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• pp.838-843
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• 2002

Chemical mechanical polishing(CMP) process has been widely used to planarize dielectric layers, which can be applied to the integrated circuits for deep sub-micron technology. The reverse moat etch process has been used for the shallow trench isolation(STI)-chemical mechanical polishing(CMP) process with conventional low selectivity slurries. Thus, the process became more complex, and the defects were seriously increased. In this paper, we studied the direct STI-CMP process without reverse moat etch step using high selectivity slurry(HSS). As our experimental results show, it was possible to achieve a global planarization without the complicated reverse moat process, the STI-CMP process could be dramatically simplified, and the defect level was reduced. Therefore the throughput, yield, and stability in the ULSI semiconductor device fabrication could be greatly improved.

• 한국지반공학회논문집
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• 제22권12호
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• pp.77-88
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• 2006

지중연속벽 시공을 위한 트렌치 굴착시 굴착배면지반의 침하거동을 규명하기 위한 모형실험을 실시하였다. 트렌치 굴착을 모사하는 모형실험장치를 제작하였으며 계측시스템을 이용하여 트렌치 굴착시 굴착배면지반의 침하를 측정하였다. 모형실험결과 트렌치 굴착시 굴착배면지반의 침하량은 굴착면에 가까워질수록 크게 증가하는 경향을 보이는 것으로 나타났다. 지반의 상대밀도가 작고, 지하수위가 높을수록 굴착시 배면지반에서의 침하량은 크게 발생하였다. 그리고, 굴착배면지반에서의 침하량은 최종 굴착깊이의 약40%에 해당하는 이격거리에서 급격하게 증가함을 알 수 있었다. 한편, 트렌치 굴착완료후 굴착면내 안정액의 수위를 저하시킬 경우 굴착측벽에서는 벌징(Bulging) 현상이 발생되고, 굴착배면지반에서는 침하현상이 발생되어 종국에는 굴착면 상부에서 지반붕괴가 발생되었다. 모형실험에서 측정된 굴착배면지반에서의 침하량은 Clough and O'Rourke(1990)에 의해 제안된 침하량보다 작게 발생하였으며, 굴착배면지반의 침하기준선은 굴착벽면 주변에서 급격하게 증가하는 쌍곡선형태로 관찰되었다.

• 한국윤활학회:학술대회논문집
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• 한국윤활학회 2002년도 proceedings of the second asia international conference on tribology
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• pp.443-444
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• 2002

The uniformity of field oxide is critical to isolation property of device in STI, so the control of field oxide thickness in STI-CMP becomes enormously important. The loss of field oxide in shallow trench isolation comes mainly from dishing and erosion in STI-CMP. In this paper, the effect of slurries on the dishing was investigated with both blanket and patterned wafers were selected to measure the removal rate, selectivity and dishing amount. Dishing was a strong function of pattern spacing and types of slurries. Dishing was significantly decreased with decreasing pattern spacing for both slurries. Significantly lower dishing with ceria based slurry than with silica based slurry were achieved when narrow pattern spacing were used. Possible dishing mechanism with two different slurries were discussed based on the observed experimental results.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제52권10호
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• pp.441-446
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• 2003

The chemical mechanical polishing (CMP) process is now widely employed in the ultra large scale integrated (ULSI) semiconductor fabrication. Especially, shallow trench isolation (STI) has become a key isolation scheme for sub-0.13/0.10${\mu}{\textrm}{m}$ CMOS technology. The most important issues of STI-CMP is to decrease the various defects such as nitride residue, dishing, and tom oxide. To solve these problems, in this paper, we studied the planarization characteristics using slurry additive with the high selectivity between $SiO_2$ and $Si_3$$N_4$ films for the purpose of process simplification and in-situ end point detection. As our experimental results, it was possible to achieve a global planarization and STI-CMP process could be dramatically simplified. Also, we estimated the reliability through the repeated tests with the optimized process conditions in order to identify the reproducibility of STI-CMP process.

• 한국재료학회지
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• 제16권5호
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• pp.308-311
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• 2006

The purpose of this study is to investigate the difference of the wafer nanotopography impact on the oxide-film thickness variation between the STI CMP using ceria slurry and STI CMP using fumed silica slurry. The nanotopography impact on the oxide-film thickness variation after STI CMP using ceria slurry is 2.8 times higher than that after STI CMP using fumed silica slurry. It is attributed that the STI CMP using ceria slurry follows non-Prestonian polishing behavior while that using fumed silica slurry follows Prestonian polishing behavior.