• Title/Summary/Keyword: Solid state Light

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Fabrication of PIN Photodiode for Solid-state Detector (고체형 검출기를 위한 핀 포토다이오드 제작)

  • Kwak, Sung-Woo;Gyuseong Cho;Hyungjoo Shin;Park, Seung-Nam
    • Proceedings of the Optical Society of Korea Conference
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    • 2003.07a
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    • pp.98-99
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    • 2003
  • PIN photodiode has been used in solid-state detector for x-ray detection as a photosensor of visible light from scintillator. Since the light from CWO is short wavelength having peak at 490nm, the light is absorbed within a very shallow layer near the surface of the photodiode before arriving at the depletion layer and does not contribute to the signal. In designing the PIN photodiode, it is important to make the p-layer as shallow as possible. (omitted)

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Design and Implementation of Solid-State Kicker Modulator for PLS-II (PLS-II 용 반도체 스위치 기반 키커 펄스 모듈레이터 설계 및 제작)

  • An, Suk-Ho;Kong, Hyung-Sup;Park, Wung-Hoa;Lee, Byung-Joon
    • Proceedings of the KIPE Conference
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    • 2019.07a
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    • pp.307-308
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    • 2019
  • The Pohang Light Source (PLS) - II is a 3 GeV third-generation synchrotron radiation facility. To inject electron beam from LINAC, a kicker modulator system and kicker magnets are installed in the PLS-II storage ring tunnel. The injected beam then falls into the storage ring beam dynamic aperture. This paper describes the design and implementation of the solid-state kicker modulator for PLS-II. The solid-state kicker modulator is consisted of high voltage solid state switch stacks. the technical considerations of the solid-state switch stacking for kicker modulator is discussed. The achieved capability of the solid-state kicker modulator demonstrates that is fulfills the design requirement of providing half-sine pulsed current of 10kA (peak), 6us (Base-width), with jitter < 2ns (Standard deviation). simulation and experimental results are presented to demonstrate the performance of the solid-state kicker modulator.

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The SrLiAl3N4:Eu2+ Phosphor Synthesized by the Raw Material Model Obtained by DFT Calculations

  • Park, Woon Bae
    • Journal of the Korean Ceramic Society
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    • v.54 no.3
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    • pp.217-221
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    • 2017
  • Improvement studies of existing phosphors are needed for use in light emitting diodes (LEDs). Among the phosphors discovered recently, the SLA ($SrLiAl_3N_4:Eu^{2+}$) is a phosphor that has a narrow width. It is now known as a good red phosphor that meets the industry's needs for warm white (color temperature ranging from 2700 to 4000 K) and high CRI (> 80). However, SLA phosphors are obtained from difficult synthetic methods. All commercially available phosphors should be derived from the general solid state synthesis method. The phosphors produced by difficult synthetic methods will inevitably fall out of price competitiveness and will be scrapped. This study succeeded in synthesizing SLA ($SrLiAl_3N_4:Eu^{2+}$) phosphors by using a general solid phase synthesis method based on the reaction energy obtained from DFT calculations. As a result, we found an optimal solid state synthesis method for SLA phosphors.

Inorganic phosphors for LED applications

  • Winkler, Holger;Barnekow, Peter;Benker, Andreas;Petry, Ralf;Tews, Stefan;Vosgroene, Tim
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.56-59
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    • 2009
  • In the nineties the invention of the InGaN blue LED has innovated illumination technology. Currently LCD backlighting and more and more general lighting applications are based on white LEDs comprising of inorganic phosphors and blue emitting InGaN chip. Well established phosphor materials are ortho silicates and garnets like yellow emitting YAG:Ce. In our paper we demonstrate that garnet materials also allow for green light emission for both, general lighting and backlighting LED applications.

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All Solid State Electrochromic (전 고체형 일렉트로크로믹 소자)

  • 채종우;조봉희;김영호
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1996.05a
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    • pp.295-298
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    • 1996
  • In this study, we have fabricated all solid state electrochromic devices using WO$_3$ film as the working electrode, V$_2$O$\_$5/ film as the counter electrode and PEO-LiClO$_4$-PC film as the solid electrolyte. The WO$_3$ thin films for working electrode and V$_2$O$\_$5/ thin films for counter electrode were deposited onto ITO glass by vacuum evaporation and were shown good electrochromic and state properties after 1x10$\^$5/ cycles. PEO-LiClO$_4$-PC polymer electrolyte can easily be formed into thin films, do not absorb in the visible region of the light. Therefore, such electrolyte have electrochromic properties suitable for large-scale all solid-state electrochromic devices. All solid-staeelectrochromic devices fabricated in this polymer electrolyte have optical modulation of 20%∼30% at 1.5 V.

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Enhanced Light Harvesting from F$\ddot{o}$rst-type resonance Energy Transfer in the Quasi-Solid State Dye-Sensitized Solar Cells (F$\ddot{o}$rst energy transfer 를 적용한 준고체 DSSC 의 효율향상)

  • Cheon, Jong Hun;Lee, Jeong Gwan;Yang, Hyeon Seok;Kim, Jae Hong
    • 한국신재생에너지학회:학술대회논문집
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    • 2011.05a
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    • pp.117.1-117.1
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    • 2011
  • We have demonstrated Forst-type resonance energy transfer (FRET) in the quasi-solid type dye-sensitized solar cells between organic fluorescence materials as an energy donor doped in polymeric gel electrolyte and ruthenium complex as an energy acceptor on surface of $TiO_2$. The strong spectral overlap of emission/absorption of energy donor and acceptor is required to get high FRET efficiency. The judicious choice of energy donor allows the enhancement of light harvesting characters of energy acceptor in quasi-solid dye sensitized solar cells which increase the power conversion efficiency. The enhanced light harvesting effect by the judicious choice/design of the fluorescence materials and sensitizing dyes permits the enhancement of photovoltaic performance of DSSC.

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A Full Inorganic Electroluminescent Microdisplay

  • Smirnov, A.;Labunov, V.;Lazarouk, S.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2003.07a
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    • pp.1075-1080
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    • 2003
  • Design and fabrication process of a full inorganic electroluminescent microdislay based on aluminum / nanostructured porous silicon reverse biased light emitting Schottky diodes are discussing. Being of a solid state construction. this micro-display is cost-effective, thin and light in weight due to very simple device architecture. Its benefits include also super high resolution, wide viewing angles, fast response time and wide operating temperature range. The advantages of full integration of a LED-array and driving circuitry onto a Si-chip will be also discussed.

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Photocatalytic Hydrogen Production in Water-Methanol Mixture over Iron-doped CaTiO3

  • Jang, J. S.;Borse, P. H.;Lee, J. S.;Lim, K. T.;Jung, O. S.;Jeong, E. D.;Bae, J. S.;Kim, H. G.
    • Bulletin of the Korean Chemical Society
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    • v.32 no.1
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    • pp.95-99
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    • 2011
  • $CaTi_{1-x}Fe_xO_3(0{\leq}x{\leq}0.4)$ solid solution photocatalysts were synthesized by iron doping during the conventional solid state reaction at $1100^{\circ}C$ for 5 h and characterized by ultraviolet-visible (UV-vis) absorption spectroscopy, X-ray diffraction, morphological analysis. We found that $CaTi_{1-x}Fe_xO_3$ samples not only absorb UV but also the visible light photons. This is because the Fe substitution at Ti-site in $CaTi_{1-x}Fe_xO_3$ lattice induces the band transition from Fe3d to the Fe3d + Ti3d hybrid orbital. The photocatalytic activity of Fe doped $CaTiO_3$ samples for hydrogen production under UV light irradiation decreased with the increase in the Fe concentration. There exists an optimized concentration of iron in $CaTiO_3$, which yields a maximum photocatalytic activity under visible light ($\lambda\geq420nm$) photons.

Relation of Luminance by Insulator and Phosphor Layer with Thin Type (형광층 및 절연층의 두께에 의한 휘도특성)

  • 박수길;조성렬;손원근;박대희;이주성
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1998.11a
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    • pp.85-88
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    • 1998
  • Light-emitting diode(LEDs), diode arrays, and phosphor display panels are finding increased use in a variety of commercial applications. Present and anticipated application of these devices include solid state indicator(e.g., digital clocks, meter readout) and display systems(e.g., instrument panels, TV display), the application being determined by the light -output capability and size availability(cost) of the particular device. In this work, Phosphor based on ZnS:Cu are used. Relation by luminance with the thickness of insulating layer and phosphor layer are discussed. Increased thickness of insulating layer are stable on voltage to 300V. By considering thickness and voltage, optimal structure and thickness are investigated. Also in order to maximize even surface emission, various sieving process are introduced. Very similar phosphor particle size is selected. Luminance by various wave intensity is also investigated. 150cd/m$^2$ luminance are investigated in stable voltage and frequency.

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Enhanced Light Harvesting by Fast Charge Collection Using the ITO Nanowire Arrays in Solid State Dye-sensitized Solar Cells

  • Han, Gill Sang;Yu, Jin Sun;Jung, Hyun Suk
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.463-463
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    • 2014
  • Dye-sensitized solar cells (DSSCs) have generated a strong interest in the development of solid-state devices owing to their low cost and simple preparation procedures. Effort has been devoted to the study of electrolytes that allow light-to-electrical power conversion for DSSC applications. Several attempts have been made to substitute the liquid electrolyte in the original solar cells by using (2,2',7,7'-tetrakis (N,N-di-p-methoxyphenylamine)-9-9'-spirobi-fluorene (spiro-OMeTAD) that act as hole conductor [1]. Although efficiencies above 3% have been reached by several groups, here the major challenging is limited photoelectrode thickness ($2{\mu}m$), which is very low due to electron diffusion length (Ln) for spiro-OMeTAD ($4.4{\mu}m$) [2]. In principle, the $TiO_2$ layer can be thicker than had been thought previously. This has important implications for the design of high-efficiency solid-state DSSCs. In the present study, we have fabricated 3-D Transparent Conducting Oxide (TCO) by growing tin-doped indium oxide (ITO) nanowire (NWs) arrays via a vapor transport method [3] and mesoporous $TiO_2$ nanoparticle (NP)-based photoelectrodes were prepared using doctor blade method. Finally optimized light-harvesting solid-state DSSCs is made using 3-D TCO where electron life time is controlled the recombination rate through fast charge collection and also ITO NWs length can be controlled in the range of over $2{\mu}m$ and has been characterized using field emission scanning electron microscopy (FE-SEM). Structural analyses by high-resolution transmission electron microscopy (HRTEM) and X-Ray diffraction (XRD) results reveal that the ITO NWs formed single crystal oriented [100] direction. Also to compare the charge collection properties of conventional NPs based solid-state DSSCs with ITO NWs based solid-state DSSCs, we have studied intensity modulated photovoltage spectroscopy (IMVS), intensity modulated photocurrent spectroscopy (IMPS) and transient open circuit voltages. As a result, above $4{\mu}m$ thick ITO NWs based photoelectrodes with Z907 dye shown the best performing device, exhibiting a short-circuit current density of 7.21 mA cm-2 under simulated solar emission of 100 mW cm-2 associated with an overall power conversion efficiency of 2.80 %. Finally, we achieved the efficiency of 7.5% by applying a CH3NH3PbI3 perovskite sensitizer.

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