• 한국세라믹학회지
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• 제34권12호
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• pp.1227-1234
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• 1997

ZnO thin films were prepared by rf-magnetron sputter at various conditions. Crystallinity, microstructure, chemical composition, and optical composition, and optical properties of the films were investigated as functions of substrate temperature (R. T.-50$0^{\circ}C$) an sputter gas (O2/Ar=0-50%). ZnO thin films grown at 50$0^{\circ}C$ with sputter gas of pure argon as well as at R. T. with sputter gas of a mixture of argon & oxygen(O2/Ar=2%) exhibit a strong tendency of (002) preferred orientation, compared with a considerable random orientation at the other conditions. The thin films with (002) preferred orientation has a chemical stoichiometry of Zn/O-1.01, a band gap of 3.3eV, and a packing density of 98% respectively.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.88-88
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• 2010

We synthesized molybdenum thin films deposited by RF magnetron sputtering and physicochemical analysis was performed. The physical and chemical properties of these films were examined with X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). The obtained film at the oxygen ratio of 0% showed crystallinity of cubic Mo(110) phase. After the oxygen ratio increased more than 5% in the sputter gas, the molybdenum films were formed as an amorphous phase. The thickness of the Mo thin film was drastically decreased from 1000 nm to ca 70 nm after introduction of oxygen in the sputter gas confirmed by spectroscopic ellipsometer (SE) and scanning electron spectroscopy (SEM). The calculated band gap of the film deduced from SE data increased from 3.17 to 3.63 eV by addition of oxygen in the sputter gas. The roughness of the Mo film was examined with atomic force microscopy (AFM) and it was dramatically decreased by introducing of oxygen during sputtering. XPS results revealed that the ratio of metallic Mo species in the film decreased by the contents of Mo(VI) species increased at the ratio of oxygen increased in the sputter gas and fully oxidized at low content of oxygen in the sputter gas.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 춘계학술대회 논문집
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• pp.84-89
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• 1996

The nucleation and growth of microporosities was observed during the course of annealing treatment of sputter-deposited AgInSbTe thin films. There was a close correlation between the density of microporosity and the sputtering gas pressure in annealed thin films. The void density for a given composition decreased with sputtering gas pressure. It was shown from the present study that the number of porosities decreased while the average porosity size increased as the annealing temperature and holding time increased. The mechanism of porosity formation in the sputter-deposited AgInSbTe thin flus containing Ar-impurity trapped from the Ar-plasma is discussed in the present article.

• The Korean Journal of Ceramics
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• 제7권2호
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• pp.85-92
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• 2001

Thin films of ZnO and Al doped ZnO were prepared by rf magnetron sputter techniques. When the oxygen fraction in Ar-O$_2$ sputter gas was about 2.0%, the films exhibited the composition of Zn:O=1.05:1. The films prepared at 250 W contain larger grains than the films grown at 100 W. However, high deposition rate seems to deteriorates the crystallinity as well as Al-substitution, resulting in lower concentration of mobile electrons. The Al-doped ZnO films which were deposited at $500^{\circ}C$ show resistance of 1$\times$10$^-2$ Wcm; optical band gap of the films ranges from 3.25 to 3.40 eV. These electrical and optical features are related with microstructural as well as crystalline characteristics of the films.

• 한국염색가공학회지
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• 제9권1호
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• pp.15-22
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• 1997

The alkali treated and black dyed PET fabrics were sputter etched under Ar gas atmosphere. The color depth of PET fabrics were increased with sputter etching time only under some limits of discharge power. And above that limits of discharge power the color depth of PET fabrics was decreased by increasing discharge power and treatment time. Minute cracks were made by sputter etching in the whole surface of fabrics to the direction of perpendicular to the longitudinal side of yarns. The fineness and density of minute crack were increased with lowering discharge power. And the size of crack was far smaller than that of microcrater which was obtained by alkali treatment. It is considered that the increase of color depth is related to the minute crack. The water permeation time of sputter etched fabrics was increased with increasing discharge power and treating time. The increase of color depth attained by sputter etching was fully kept through repeated laundering.

• 한국의류산업학회지
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• 제3권4호
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• pp.344-350
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• 2001

Wool fabrics were treated with dichloro isocyanuric acid (DCCA) and dyed with acid dyes (C.I. Acid Red 18), and then, they were treated by sputter etching. Wool fabrics had been sputtered with aluminium under various conditions such as sputter etching time and discharge power in the presence of argon gas. We compared mechanical properties, colour difference and fastness properties of these samples one another: Mechanical properties and colour difference of sputtered wool fabrics changed by sputter etching time, discharge power and DCCA concentration. Light fastness showed a rising tendency but rubbing fastness showed a downward tendency when sputter etching time was 7 minutes.

• 한국염색가공학회지
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• 제9권2호
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• pp.50-56
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• 1997

Poly(ethylene terephthalate) (PET) has been etched by sputtering in the presence of argon gas and the resulting surface modifications investigated via weight loss, time of water permeation, half value period, scanning electron microscope(SEM) and color difference measurements. According to increasing sputter etching time, weight loss increased, the time of water permeation and half value period of the sputter etched PET fabrics decreased. Color depth of fabrics increased by increasing sputter etching time. We investigated the fabric surface modification by SEM. Many microcraters on the fabric surface formed by the sputter etching resulted in increase of surface area of the fabric and wettability.

• 한국전기전자재료학회논문지
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• 제14권12호
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• pp.1008-1015
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• 2001

Thin films of vanadium oxide(VO$\_$x/) have been deposited by r.f. magnetron sputtering from V$_2$O$\_$5/ target in gas mixture of argon and oxygen. The oxygen/(oxygen+argon) partial pressure ratio is changed from 0% to 8%. Crystal structure, chemical composition, bonding, optical and electrical properties of films sputter-deposited under different oxygen gas pressures are characterized through XPS, AES, RBS, FTIR, optical absorption and electrical conductivity measurements. V$_2$O$\_$5/ and lower oxides co-exist in sputter-deposited films and as the oxygen partial pressure is increased the films become more stoichiometric V$_2$O$\_$5/. The increase of O/V ratio with increasing oxygen gas pressure is attributed to the partial filling of oxygen vacancies through diffusion. It is observed that the oxygen atoms located on the V-O plane of V$_2$O$\_$5/ layer participate more readily in the oxidation process. With increasing oxygen gas pressure indirect and direct optical band gaps are increased, but thermal activation energies are decreased.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2007년도 춘계학술대회 논문집
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• pp.735-736
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• 2007

• 한국재료학회지
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• 제12권8호
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• pp.661-668
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• 2002

A study was made to examine the electrical, compositional, structural and morphological properties of Ag thin films deposited by DC magnetron sputtering in $O_2$ atmosphere with deposition temperature from room temperature to 15$0^{\circ}C$ using in-line sputter system. The Ag films deposited at temperature above $100^{\circ}C$ in oxygen atmosphere gave a similar specific resistivity to and even lower oxygen content than those deposited using pure Ar sputter gas The Ag films deposited with pure Ar gas was mainly composed of crystallites with [111] preferred orientation, while, for those deposited in oxygen atmosphere, more than 50% of the volume was composed of crystallites with [100] orientation. The difference in the micro structure did not cause any difference in the specific resistivity of Ag films. The results showed that the transparent conducting oxide films and the Ag films could be processed sequentially in the same deposition chamber with careful control of deposition temperature, which might result in a cost reduction for constructing the large scale in-line deposition system.