• Transactions of the Korean Society of Mechanical Engineers
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• v.16 no.8
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• pp.1513-1518
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• 1992

Numerical solution technique is suggested to analyze the vibration of a spring composed of stacked beams fastened together. Bernoulli-Euler beam theory for small deflection is used, and incremental Coulomb friction law is adopted for the interface friction. The validity of the present solution technique is checked for the perfectly bonded case and the perfect sliding case.

• Journal of the Korea Society of Computer and Information
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• v.16 no.8
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• pp.129-135
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• 2011

In this paper, we propose a multi target's elevation angle estimation method using multi beam forming technique. This method make a stacked beam to digital processing a received signal in array element. There can be desired receiving beam to application weight value at antenna element in beam forming. Currently, we are to make multi stacked beam using fast fourier transform in stead of phase shifter to be a computer performance much improvement. Also, we improve multi beam directivity using beam steering error correction technique in order to beam steering to desired direction in receiver. Through simulation, we show that the proposed elevation estimation method based on fast fourier transform and beam steering error correction technique, improves th performance of target estimation compared to previous method.

• ETRI Journal
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• v.20 no.2
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• pp.231-240
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• 1998

We report, for the first time, the fabrication of vertically stacked InGaAs/GaAs quantum wires (QWRs) on V-grooved substrates by chemical beam epitaxy (CBE). To fabricate the vertically stacked QWRs structure, we have grown the GaAs resharpening barrier layers on V-grooves with (100)-(322) facet configuration instead of (100)-(111) base at 450 $^{\circ}C$. Under the conditions of low growth temperature, the growth rate of GaAs on the (322) sidewall is higher than that at the (100) bottom. Transmission electron microscopy verifies that the vertically stacked InGaAs QWRs were formed in sizes of about $200{\AA} {\times} 500{\sim}600 {\AA}$. Three distinct photoluminescence peaks related with side-quantum wells (QWLs), top-QWLs and QWRs were observed even at 200 K due to sufficient carrier and optical confinement. These results strongly suggest the existence of the quantized state in the vertically stacked InGaAs/GaAs QWRs grown by CBE.

• Journal of Mechanical Science and Technology
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• v.19 no.5
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• pp.1065-1071
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• 2005

In this study, residual stress distribution in multi-stacked film by MEMS (Micro-Electro Mechanical System) process is predicted using Finite Element method (FEM). We evelop a finite element program for residual stress analysis (RESA) in multi-stacked film. The RESA predicts the distribution of residual stress field in multi-stacked film. Curvatures of multi­stacked film and single layers which consist of the multi-stacked film are used as the input to the RESA. To measure those curvatures is easier than to measure a distribution of residual stress. To verify the RESA, mean stresses and stress gradients of single and multi layers are measured. The mean stresses are calculated from curvatures of deposited wafer by using Stoney's equation. The stress gradients are calculated from the vertical deflection at the end of cantilever beam. To measure the mean stress of each layer in multi-stacked film, we measure the curvature of wafer with the left film after etching layer by layer in multi-stacked film.

• Journal of the Korean Vacuum Society
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• v.18 no.6
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• pp.468-473
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• 2009

Selective area epitaxy of multiple-stacked InP/InGaAs structures were grown by chemical beam epitaxy. The width of top of the multiple-stacked InP/InGaAs layer which were selectively grown on the stripe lines parallel to the <011> direction was narrowed, while the width of top of the multiple-stacked InP/InGaAs layer on the stripe lines parallel to the <01-1> was widen. This difference according to the <011> and <01-1> direction was explained by the growth of InGaAs <311>A and B faces on the (100) InP surface on the stripe lines parallel to the <01-1> direction. Under growth rate of $1\;{\mu}m/h$, top of the multiple-stacked InP/InGaAs was flattened as the pressure of group V gas was decreased. This phenomenon was understood by the saturation of group V element on the surface.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.13 no.5
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• pp.860-867
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• 2009

In this paper, we designed the array antenna for FMCW radar in X - band frequency, and we chose stacked structure for improvement of narrow bandwidth. The array antenna is implemented on the circuit board which is relative permittivity 2.33 and the stacked patchs are designed on the circuit board which is relative permittivity 4.6. A Foam which has a similar permittivity of air is added to keep the particular gap between array antenna and the stacked patch. The result of array antenna has characteristics that a half-power beam width is $10.6^{\circ}$ and antenna gain is 18.70 dBi and bandwidth is 1.25GHz at the design frequency of 9GHz. The result of the array antenna with the stacked structure has that the half power beam width is $15.17^{\circ}$ and the antenna gain is 15.85dBi and bandwidth is 2GHz. It is needed to improve the antenna gain as keeping bandwidth in same level.

• 한국초전도학회:학술대회논문집
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• v.13
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• pp.21-21
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• 2003

• Journal of the Korean Society for Precision Engineering
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• v.27 no.4
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• pp.102-108
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• 2010

Projection microstereolithography is a process of fabricating a micro-structure by using dynamic mask such as digital micromirror device(DMD). DMD shapes the beam into cross-sectional image of structure. Photocurable resin is cured by the beam and stacked layer on top of layer. It is difficult to deliver the beam from the DMD to the photocurable resin without any distortions. We assume that the beam exposed to the resin by 1 pixel of DMD has Gaussian distribution, so the shaped beam reflected by the DMD affects its neighboring area. Curing pattern corresponding to a cross-sectional images is predicted by superposition of pixels of Gaussian distribution and it is similar to cured shape.

• Journal of the Korea Institute of Military Science and Technology
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• v.16 no.3
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• pp.365-372
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• 2013

The multibeam surveillance radar is a state-of-art of 3D radar technology. It applies the stacked beams realized by a digital beamformer. In this paper, a hybrid compensation technique on elevation angle errors for low elevation angle targets over the sea in multipath radar environments is proposed. The proposed method can be applied to stacked beam radars. Double null algorithm based on maximum likelihood method in 3-D beamspace domain works well unless the phase difference between the two rays(direct and specular path) is close to $0^{\circ}$ and the magnitude of reflection coefficient is close to 0. To overcome these problems, we propose a hybrid compensation technique which uses the selective double null algorithm and the beam-ratio compensation technique for low-elevation errors on a log scale. Results of computer simulation show that the proposed method outperform conventional monopulse method and double null algorithm only under various multipath environments.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.11
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• pp.821-825
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• 2013

Effect of multi-stacked layer (MSL), 0.1 mol (M) and 0.3 mol (M) hafnium oxide ($HfO_2$) alignment layers were fabricated via a solution-process for LCs orientation. The solutions were spin-coated and annealed in a furnace. MSL consists of three sub-layers using 0.1 M solution, mono-layer (ML) is composed of 0.3 M $HfO_2$ solution. Then ion-beam irradiation was treated with 1.8 keV for 2 min. $HfO_2$-based LC cells were investigated through photographs, pre-tilt angle using crystal rotation method, X-ray photoelectron spectroscopy (XPS) measurement, and surface roughness using atomic force microscopy(AFM) for their characteristic research. Good LC orientation characteristics were observed on MSL $HfO_2$ surface. The LC alignment mechanism on MSL $HfO_2$ and ML $HfO_2$ surfaces was attributed to van der Waals (VDW) interaction between the LC molecular and substrate surface.