• The Journal of Korean Academy of Prosthodontics
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• v.43 no.6
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• pp.727-735
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• 2005

Statement of problem. Platform switching in implant prosthesis has been used for esthetic and biological purpose. But there are few reports for this concept. Purpose. The purpose of this study is evaluation of platform switching in wide implant by three dimensional finite element analysis. Materials and Methods. The single implant and prosthesis was modeled in accordance with the geometric designs for Osstem implant system. Three-dimensional finite element models were developed for (1) a wide diameter 3i type titanium implant 5 mm in diameter, 13 mm in length with wide cemented abutment, titanium alloy abutment screw, and prosthesis (2) a wide diameter 3i type titanium implant 5 mm in diameter, 13 mm in length with regular cemented abutment, titanium alloy abutment screw and prosthesis(platform switching) was made for finite element analysis. The abutment screws were subjected to a tightening torque of 30 Ncm. The amount of preload was hypothesized to 650N, and round and flat type prostheses were loaded to 200 N. Four loading offset point (0, 2, 4, 6 mm from the center of the implants) were evaluated. Models were processed by the software programs HyperMesh and ANSA. The PAM-CRASH 2G simulation software was used for analysis of stress. The PAM-VIEW and HyperView were used for post processing. Results. The results from experiment were as follows; 1. von Mises stress value is increased in order of bone, abutment, implant and abutment screw. 2. von Mises stress of abutment screw is lower when platform switching. 3. von Mises stress of implant is lower when platform switching until loading offset 4 mm. 4. von Mises stress of abutment is similar between each other. 5. von Mises stress of bone is slightly higher when platform switching. Conclusion. The von Mises stress pattern of implant components is favor when platform switch ing but slightly higher in bone stress distribution than use of wide abutment. The research about stress distribution is essential for investigation of the cortical bone loss.

• Proceedings of the KIEE Conference
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• 2004.04a
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• pp.136-139
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• 2004

This paper presents a buck circuit topology of high-frequency with a single switching element. It solved the problem which arised from hard-switching in high-frequency using a resonant snubber and operating under the principle of ZCS turn-on and ZVS turn-off commutation schemes. In the existing circuit, it has the voltage stress which is twice of input voltage in free-wheeling diode. But in the proposed circuit, it has voltage stress which is lower than input voltage with modifing a location of free-wheeling diode. In this paper, it explained the circuit operation of each mode and confirmed the waveform of each mode with simulation result. Also the experiment result verified the simulation waveform and compared the existing voltage stress of free-wheeling diode with the proposed voltage stress of that. Moreover, it compares and analyzes the proposed circuit's efficiency with the hard-switching circuit's efficiency according to the change of load current.

• The Transactions of the Korean Institute of Electrical Engineers B
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• v.53 no.9
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• pp.576-583
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• 2004

This paper presents a buck circuit topology of high-frequency with a single switching device. It solved the problem which arised from hard-switching in high-frequency using a resonant snubber and operating under the principle of ZCS turn-on and ZVS turn-off commutation schemes. In the existing circuit, it has the voltage stress that is almost twice of input voltage in a free-wheeling diode. In the proposed circuit, it has the voltage stress that is lower than input voltage with modifing a location of free -wheeling diode. In this paper, it expained the circuit operation of each mode and analyzed feedback-loop stabilization. Also it confirmed the waveform of each mode with simulation result. The experiment result verified the simulation waveform and compared the voltage stress of a free -wheeling diode in the exsiting circuit with the voltage stress of that in the proposed circuit. Moreover, it compares and analyzes the proposed circuit's efficiency with the hard-switching circuit's efficiency according to the change of load current.

• Corrosion Science and Technology
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• v.7 no.6
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• pp.307-314
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• 2008

The influence of a moist atmosphere on $90^{\circ}$ domain switching under a sustained electric field, stress corrosion cracking of an indentation crack in water and an aggressive solution, and the relation between penetrating crack propagation and domain switching were studied using $BaTiO_3$ single crystal. The results indicate that enlarging the domain switching zone and crack propagation could be facilitated by a moist atmosphere or an aggressive solution due to the indentation residual stress. A moist atmosphere exerts remarkable influence upon the polarization of $BaTiO_3$ single crystal under a sustained electric field, and the surface energy of the c domain was much lower than that of the a domain. Domain switching ahead of a penetrating indentation crack tip was an essential requirement for crack propagation under constant stress.

• The Journal of Advanced Prosthodontics
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• v.9 no.1
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• pp.31-37
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• 2017

PURPOSE. The purpose of this study was to analyze the influence of the platform switching concept on an implant system and peri-implant bone using three-dimensional finite element analysis. MATERIALS AND METHODS. Two three-dimensional finite element models for wide platform and platform switching were created. In the wide platform model, a wide platform abutment was connected to a wide platform implant. In the platform switching model, the wide platform abutment of the wide platform model was replaced by a regular platform abutment. A contact condition was set between the implant components. A vertical load of 300 N was applied to the crown. The maximum von Mises stress values and displacements of the two models were compared to analyze the biomechanical behavior of the models. RESULTS. In the two models, the stress was mainly concentrated at the bottom of the abutment and the top surface of the implant in both models. However, the von Mises stress values were much higher in the platform switching model in most of the components, except for the bone. The highest von Mises values and stress distribution pattern of the bone were similar in the two models. The components of the platform switching model showed greater displacement than those of the wide platform model. CONCLUSION. Due to the stress concentration generated in the implant and the prosthodontic components of the platform switched implant, the mechanical complications might occur when platform switching concept is used.

• Journal of the Korean Institute of Telematics and Electronics B
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• v.31B no.12
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• pp.137-144
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• 1994

In this paepr, we present a soft switching PWM inverter as reducing switching loss and stress at high power application. The PWM inverter is designed by space voltage about 2$\sqrt{3}$ times (15%) than conventional SPWM method. To reduce switching loss and stress. The DC link requires a capacitor, an inductor and two additional switches. Therefore proposed inverter performs trun PWM operation under the soft switching condition. As a result of soft switching we can reduce switching loss and ensure stability of switching devices. For approach to real time, control system is realized by 8 bit single-chip microprocessor. Therefore, we can construct system is with simplified volumn and structure by eliminating carrier wave and referrence wave generator of conventional SPWM method.

• Journal of Electrical Engineering and Technology
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• v.13 no.1
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• pp.256-262
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• 2018

This study introduces a novel Soft Switching (SS) Pulse Width Modulated (PWM) AC-DC boost converter. In the proposed converter, the main switch is turned on with Zero Voltage Transition (ZVT) and turned off with Zero Current Transition (ZCT). The main diode is turned on with Zero Voltage Switching (ZVS) and turned off with Zero Current Switching (ZCS). The auxiliary switch is turned on and off with ZCS. All auxiliary semiconductor devices are turned on and off with SS. There is no extra current or voltage stress on the main semiconductor devices. The majority of switching energies are transferred to the output by auxiliary transformer. Thus, the current stress of auxiliary switch is significantly reduced. Besides, the proposed converter has simple structure and ease of control due to common ground. The theoretical analysis of the proposed converter is verified by a prototype with 100 kHz switching frequency and 500 W output power. Furthermore, the efficiency of the proposed converter is 98.9% at nominal output power.

• Journal of Power Electronics
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• v.15 no.2
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• pp.389-398
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• 2015

This paper presents a 1.92 kW resonant converter for medium voltage applications that uses low voltage stress MOSFETs (500V) to achieve zero voltage switching (ZVS) turn-on. In the proposed converter, four MOSFETs are connected in series to limit the voltage stress of the power switches at half of the input voltage. In addition, three resonant circuits are adopted to share the load current and to reduce the current stress of the passive components. Furthermore, the transformer primary and secondary windings are connected in series to balance the output diode currents for medium power applications. Split capacitors are adopted in each resonant circuit to reduce the current stress of the resonant capacitors. Two balance capacitors are also used to automatically balance the input capacitor voltage in every switching cycle. Based on the circuit characteristics of the resonant converter, the MOSFETs are turned on under ZVS. If the switching frequency is less than the series resonant frequency, the rectifier diodes can be turned off under zero current switching (ZCS). Experimental results from a prototype with a 750-800 V input and a 48V/40A output are provided to verify the theoretical analysis and the effectiveness of the proposed converter.

• Journal of Power Electronics
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• v.9 no.3
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• pp.335-342
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• 2009

The Z-source inverter (ZSI) provides unique features such as the ability to boost dc voltage with a single stage simple structure. Although the dc capacitor voltage can be boosted by a shoot-through state, the voltage stress across the switching devices is rapidly increased, so high switching device power is required at the ZSI. In this paper, algorithms for minimizing the voltage stress are suggested. The possible operating region for obtaining a desired ac output voltage according to both the shoot-through time and active state time is investigated. The reference capacitor voltages are derived for minimizing the voltage stress at any desired ac output voltage by considering the dc input voltage. The proposed methods are carried out through the simulation studies and experiments with 32-bit DSP.

• Proceedings of the KIPE Conference
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• 2003.07a
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• pp.294-298
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• 2003

In this paper, the new zero-current-transition (ZCT) circuit cell is proposed. The main switch is turned-off under the zero current and zero voltage condition, and there is no additional current stress and voltage stress in, the main switch and the main diode. The Auxiliary switch is turned-off under the zero voltage condition, and the main diode is turned-on under the zero voltage condition, The resonant current required to obtain the ZCT is small and regenerated to the input voltage source. The operational principles of the boost converter integrated with the proposed ZCT circuit cell is analyzed theoretically and verified by the simulation and experimental result. Index terms - zero-current-transition (ZCT), zero-current- switching (ZCS), zero-voltage-switching (ZVS)