• Korean Journal of Materials Research
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• v.2 no.1
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• pp.76-82
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• 1992

Deposition of $TEOS-O_3$ oxide film as inter-metal dielectric layer shows the substrate dependency according to the substrate material and pattern density and pitch size. To minimize substrate and Pattern dependency, TEOS-base and $SiH_4-base$ Plasma oxide were predeposited as underlying material on the substrate. The substrate dependency of $TEOS-O_3$ oxide film was more significant on TEOS-base plasma oxide than on $SiH_4-base$ plasma oxide. The dependency of $TEOS-O_3$ oxide film was remarkably reduced, or nearly eliminated, by $N_2$plasma treatment on TEOS-base plasma oxide, which appears to be caused by the O-Si-N structure, observed on the the surface of TEOS-base plasma oxide.

• Transactions on Electrical and Electronic Materials
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• v.6 no.4
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• pp.164-168
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• 2005

Effects of high-temperature slurry were investigated on the chemical mechanical polishing (CMP) performance of tetra-ethyl ortho-silicate (TEOS) film with silica and ceria slurries by the surface analysis of X-ray photoelectron spectroscopy (XPS). The pH showed a slight tendency to decrease with increasing slurry temperature, which means that the hydroxyl $(OH^-)$ groups increased in slurry as the slurry temperature increased and then they diffused into the TEOS film. The surface of TEOS film became hydro-carbonated by the diffused hydroxyl groups. The hydro-carbonated surface of TEOS film could be removed more easily. Consequently, the removal rate of TEOS film improved dramatically with increasing slurry temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.10
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• pp.844-850
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• 2002

Linearly graded profiles on the field area oxide are frequently used in power integrated circuits to reduce the surface electric field when power devices are operated in forward or reverse blocking modes. It is shown here that tapered windows can be made using the difference of etch rates between the bottom and the top layer of TEOS film. Annealed TEOS films are etched at a lower rate than the TEOS film without annealing Process. The fast etching layer results in window walls having slopes in the range of 25$^{\circ}$∼ 80$^{\circ}$ with respect to the wafer surface. Taper etching technique by annealing the TEOS film applies to high voltage LDMOS, which is compatible with CMOS process, due to the minimum changes in both of design rules and thermal budget.

• Bulletin of the Korean Chemical Society
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• v.22 no.7
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• pp.678-684
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• 2001

Porous silica-pillared montmorillonites were prepared by simultaneous intercalation of dodecylamine-TEOS [tetraethylorthosilicate, Si(OC2H5)4] into the H-montmorillonite and intragallery amine-catalyzed hydrolysis of TEOS. Mixtures of the H-montmorillonite, dodecylamine and TEOS at molar ratios of 1 : 2 : 15-30 and 1 : 2-6 : 20 resulted to swollen and viscous gel once at room temperature, allowing intercalation compounds which dodecylamine and TEOS were simultaneously intercalated into interlayer of H-montmorillonite. The hydrolysis of the gallery TEOS was conducted in water solution for 40 min at room temperature, affording siloxane-pillared H-montmorillonite. Calcination of samples at 500 $^{\circ}C$ in air resulted in silica-pillared montmorillonite with large specific surface areas between 403 and 577 m2 /g, depending on the reaction stoichiometry. The reaction at H-montmorillonite : dodecylamine : TEOS reaction stoichiometries of 1 : 2 : 15 and 1 : 4 : 20 resulted in high specific surface areas and mesopores with a narrow pore size distribution. Result indicates that the intragallery-amine catalyze the hydrolysis of gallery-TEOS and simultaneously have a role of gallery-templated micellar assemblies.

• Journal of the Korean Ceramic Society
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• v.33 no.6
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• pp.679-685
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• 1996

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1996.11a
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• pp.725-730
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• 1996

The key process in silicon surface micromachining is the selective etching of a sacrificial layer to release the silicon microstructure. The newly developed anhydrous HF/$CH_3$OH gas phase etching of TEOS (teraethylorthosilicate) sacrificial layers onto the polysilicon and the nitride substrates was employed to release the polysilicon microstructures. A residual product after TEOS etching onto the nitride substrate was observed on the surface, since a SiOxNy layer is formed on the TEOS/nitride interface. The polysilicon microstructures are stuck to the underlying substrate because SiOxNy layer does not vaporize. We found that the only sacrificial etching without any residual product and stiction is TEOS etching onto the polysilicon substrate.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.645-646
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• 2005

The increasing hydroxyl ($OH^-$) groups diffused into the TEOS and then weakened reactants such as H-C-O-Si bonds on the surface of TEOS film were actively generated with the increase of slurry temperature. These soft reactants on the surface of TEOS film could be removed easily by mechanical parts of CMP.

• The Korean Journal of Rheology
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• v.2 no.1
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• pp.53-59
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• 1990

물량 및 촉매를 변화시키며 TEOS 용액에 대하여 점도를 측정하였다. 염기성 촉매 를 사용한 TEOS 용액은 구형 입자를 갖는 것으로 나타났다. 적은 초기 물량과 산성 촉매 를 사용한 TEOS 용액은 환원 점도의 실험결과로 미루어 선형의 고분자를 갖고 있는 것으 로 보인다. 반면 많은 물량과 산성폭매를 사용한 TEOS 용액은 많은 가지 사슬을 갖는 비 선형 입자를 형성하는 것으로 사료된다. 적은 물량의 산성촉매에서 생성하는 선형고분자 구 조느 삼중규소연쇄의 리본형태로 생각된다.

• Membrane Journal
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• v.18 no.1
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• pp.44-52
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• 2008

Pervaporation separation for water-ethanol mixtures has been carried out using crosslinked poly(vinyl alcohol) (PVA) membranes with poly(styrene sulfonic acid-co-maleic acid) (PSSA_MA) and at which tetraethylorthosilicate (TEOS) was introduced. The concentration of PSSA_MA was fixed 7 wt% over PVA and the TEOS contents, 3, 5, and 7 wt%, were varied against PVA. The composition of the feed mixtures were 10, 20, 30 and 50 wt% of water in it. PVA/PSSA_MA/5 wt% TEOS membrane showed the separation factor, 1730 and the permeability, $16.3g/m^2{\cdot}hr$ for water : ethanol = 10 : 90 at $50^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.89-90
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• 2008

본 연구에서는 PECVD(Plasma Enhanced CVD) 에서 사용하는 유해 가스인 $SiH_4$ 대신에 유기 사일렌 반응 물질인 TEOS(Tetraethyl Orthosilicate, Si$(OC_2H_5)_4)$를 이용하여 상압 화학 기상 증착법 (Atmospheric Pressure CVD, APCVD)으로 실리콘 산화막을 증착하고 박막의 조성과 특성 및 화학적, 전기적 특성들을 살펴보았다. TEOS 반응원료를 이용한 CVD 공정에서 공정 온도를 낮추기 위한 방법으로 강력한 산화제인 오존을 이용하여 공정온도를 $400^{\circ}C$이하로 낮췄으며, 유리기판 상의 ELA(Excimer Laser Annealing)처리된 다결정 실리콘 기판에 트랜지스터 소자를 제작하고, 게이트 절연막으로의 전기적 특성을 살펴보았다.