• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.115.2-115.2
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• 2014

2004년에 최초의 2D 물질인 그래핀이 발표된 이후로 그래핀에 대한 관심이 매우 높다. 그래핀은 매우 높은 캐리어 이동도와 높은 광학 투과도, 높은 기계적 강도, 뛰어난 유연성등 다양하고, 뛰어난 물리적, 광학적, 기계적 성질을 갖고 있다. 이러한 뛰어난 성질로 인해 초고속 전자소자, 유연소자, 투명전극, 광학소자등 다양한 분야의 응용이 기대되어, 현재 물리학, 화학, 재료등 여러분야에서 활발히 연구가 진행되고 있다. 이러한 활발한 연구에도 불구하고 그래핀이 가진 기본적인 물리적 특성인 "제로 밴드갭" 특성으로 인해 낮은 소모전력이 요구되는 전자소자와 또한 광학소자로서의 응용에 한계를 보이고 있는 것이 사실이다. 그래핀의 기본적인 물리적 성질인 "제로 밴드갭"에서 탈출해 밴드갭을 증가하기 위해 나노리본, 바이레이어 그래핀등, 다양한 연구가 진행되고 있다. 하지만, 이를 통한 밴드갭의 증가량은 충분히 크지않아서 그래핀의 전자 및 광학적 응용이 아직까지는 매우 어렵다. 이러한 그래핀의 물질적 한계에 비추어 최근에 그래핀과 달리 충분한 밴드갭이 있어 반도체 특성을 가지는 Transition Metal DichalCogenide (TMDC) 물질에 대한 관심이 매우 높다. TMDC물질은 그래핀과 같이 2차원 물질로서 극히 얇으며, 또한 밴드갭을 가지고 있다. 따라서 실리콘과 같이 전자소자, 광학소자의 응용이 더욱 현실적으로 가능하다. 가장 대표적인 물질은 MoS2, WS2등을 들수 있다. TMDC 물질의 연구에서 가장 기본적으로 선행되어야할 연구분야는 바로 물질 성장에 있으며, 본 연구에서는 가장 대표적인 성장방법인 화학기상증착(CVD), 스퍼터링-물리적기상증착 (PVD)를 이용한 MoS2, WS2등의 TMDC의 성장연구에 대해 논의하고자 한다.

• Journal of the Microelectronics and Packaging Society
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• v.27 no.4
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• pp.119-125
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• 2020

Transition metal dichalcogenides (TMDCs), two-dimensional atomic layered materials with direct bandgap in the range of 1.1-2.1 eV, have attracted a lot of research interest due to their high response to light and capability to build new types of artificial heterostructures. However, the large-area synthesis of high-quality and uniform TMDC films with vertical-stacked heterostructure still remains challenge. In this study, we have developed a metal-organic chemical vapor deposition (MOCVD) system for TMDCs and conducted a systematic study on the growth of single-layer TMDCs and their heterostructures. In particular, using a bubbler-type organometallic compound sources, the concentration and flow rate of each source can be precisely controlled to obtain uniformly single-layered MoS2 and WS2 films over the centimeter scale. In addition, the MoS2/WS2 vertical heterostructure was achieved by growing WS2 film directly on the MoS2 film, as confirmed by electron microscopy, UV-visible spectrophotometer, Raman spectroscopy, and photoluminescence spectroscopy.

• Proceeding of EDISON Challenge
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• 2015.03a
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• pp.367-370
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• 2015

Monolayer transition metal dicalcogenide (TMDC) materials are currently attracting extensive attention due to their distinctive electronic, transport, and optical properties. For example, monolayer $MoS_2$ exhibits a direct band gap in the visible frequency range, which makes it an attractive candidate for the photocatalytic water splitting. For the photoelectrochemical water splitting, the appropriate band edge positions that overlap with the water redox potential are necessary. Similarly, appropriate band level alignments will be crucial for the light emitting diode and photovoltaic applications utlizing heterojunctions between two TMDC materials. Carrying out first-principles calculations, we here investigate how the band edges of $MoS_2$ can be adjusted by surface ligand functionalization. This study will provide useful information for the realization of ligand-based band engineering of monolayer $MoS_2$ for various electronic, energy, and bio device applications.

• Proceeding of EDISON Challenge
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• 2016.03a
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• pp.295-298
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• 2016

Future logic device over the FinFET generation requires a complete electrostatics and transport characteristic for low-power and high-speed operation as extremely scaled devices. Silicon, Germanium and III-V based nanowire-based MOSFET devices and few-layer TMDC (Transition metal dichalcogenide monolayers) based multi-gate devices have been brought attention from device engineers due to those excellent electrostatic and novel device characteristic. In this study, we simulated ultrascaled Si/Ge/InAs gate-all-around nanowire MOSFET and MoS2 TMDC based DG MOSFET and TFET device by tight-binding NEGF method. As a result, we can find promising candidates of the future logic device of each channel material and device structures.

• Journal of the Korean Physical Society
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• v.73 no.11
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• pp.1735-1743
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• 2018

Excitons are the most prominent features of the optical properties of monolayer transition-metal dichalcogenides(TMDC). In view of optoelectronics it is very important to understand the decay mechanisms of the excitons of these materials. Auger recombination of excitons are regarded as one of the dominant decay processes. In this paper the Auger constant of recombination is computed based on the approach proposed by Kavoulakis and Baym. We obtain both temperature dependent (from type A, A' processes) and temperature independent (from type B, B' processes) contributions, and a numerical estimate of theoretical result yields the value of constant in the order of $10^{-2}cm^2s^{-1}$, being consistent with existing experimental data. This implies that Auger decay processes severely limit the photoluminescence yield of TMDC-based optoelectronic devices.

• Proceeding of EDISON Challenge
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• 2016.03a
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• pp.339-343
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• 2016

본 연구에서는 양자역학적 전하수송 모델링을 바탕으로 channel length ($L_{ch}$), equivalent oxide thickness (EOT), supply voltage ($V_{DS}$) 등의 소자 파라미터들에 초점을 맞춰 저전력 소자를 구현하였다. 본 연구에서 나타낸 최적의 소자 특성으로부터 ITRS에서 제시하고 있는 2021년 예측되는 소자 특성에 비하여 더 낮은 $V_{DS}$에서 동작을 하면서 더 높은 $I_{on}$과 낮은 SS 로서 구동하는 것이 가능할 것으로 기대된다. 뿐만 아니라 inverter 동작에 있어서 ideal inverter에 가까운 동작을 할 것으로 기대된다.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.281.1-281.1
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• 2016

Transition metal dichalcogenides (TMDCs) are promising layered structure materials for next-generation nano electronic devices. Many investigation on the FET device using TMDCs channel material have been performed with some integrated approach. To use TMDCs for channel material of top-gate thin film transistor(TFT), the study on high-k dielectrics on TMDCs is necessary. However, uniform growth of atomic-layer-deposited high-k dielectric film on TMDCs is difficult, owing to the lack of dangling bonds and functional groups on TMDC's basal plane. We demonstrate the effect of remote oxygen plasma pretreatment of large area synthesized few-layer MoSe2 on the growth behavior of Al2O3, which were formed by atomic layer deposition (ALD) using tri-methylaluminum (TMA) metal precursors with water oxidant. We investigated uniformity of Al2O3 by Atomic force microscopy (AFM) and Scanning electron microscopy (SEM). Raman features of MoSe2 with remote plasma pretreatment time were obtained to confirm physical plasma damage. In addition, X-ray photoelectron spectroscopy (XPS) was measured to investigate the reaction between MoSe2 and oxygen atom after the remote O2 plasma pretreatment. Finally, we have uniform Al2O3 thin film on the MoSe2 by remote O2 plasma pretreatment before ALD. This study can provide interfacial engineering process to decrease the leakage current and to improve mobility of top-gate TFT much higher.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.277.1-277.1
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• 2016

We report on synthesis of large-area MoS2 using chemical vapor deposition (CVD). Relatively uniform MoS2 are obtained. To fabricate field-effect transistor (FET) devices, MoS2 films are transferred to another SiO2/Si substrate using polystyrene (PS) and patterned using oxygen plasma. In addition, to reduce contact resistance, synthesis of graphene used as channel. Device characteristics are presented and compared with the reported results.

• Journal of the Korean Ceramic Society
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• v.56 no.1
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• pp.24-36
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• 2019

Recently, considerable progress and many breakthroughs have been achieved in the growth of two-dimensional materials, especially transition metal dichalcogenides (TMDCs), which attract significant attention owing to their unique properties originating from their atomically thin layered structure. Chemical vapor deposition (CVD) has shown great promise to fabricate large-scale and high-quality TMDC films with exceptional electronic and optical properties. However, the scalable growth of high-quality TMDCs by CVD is yet to meet industrial criteria. Therefore, growth mechanisms should be unveiled for a deeper understanding and further improvement of growth methods are required. This review summarizes the recent progress in the growth methods of TMDCs through CVD and other modified approaches to gain insights into the growth of large-scale and high-quality TMDCs.

• Ceramist
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• v.22 no.4
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• pp.350-356
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• 2019

Recently, transition metal dichalcogenide (TMDC) monolayers have been the subject of research exploring the physical phenomenon generated by low dimensionality and high symmetry. One of the keys to understanding new physical observations is the electronic band structure of 2D TMDCs. Angle-resolved photoelectron spectroscopy (ARPES) is, to this point, the best technique for obtaining information on the electronic structure of 2D TMDCs. However, through ARPES research, obtaining the long-range well-ordered single crystal samples always proves a challenging and obstacle presenting issue, which has been limiting towards measuring the electronic band structures of samples. This is particularly true in general 2D TMDCs cases. Here, we introduce the approach, with a mathematical framework, to overcome such ARPES limitations by employing the high level of symmetry of 2D TMDCs. Their high symmetry enables measurement of the clear and sharp electronic band dispersion, which is dominated by the band dispersion of single-crystal TMDCs along the two high symmetry directions Γ-K and Γ-M. In addition, we present two important studies and observations for the direct measuring of the exciton binding energy and charge transfer of 2D TMDCs, both being established by the above novel approach.