• Asian-Australasian Journal of Animal Sciences
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• v.1 no.4
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• pp.189-193
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• 1988

Distribution of tracer particles in carrier conform to Poisson distribution and the effect of Poisson distribution on mixing uniformity can be reduced by increasing the tracer particle number per unit weight. In this paper, above-mentioned theory has been demonstrated by using three kinds of rotor whose pitches are different.

• Communications for Statistical Applications and Methods
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• v.15 no.5
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• pp.793-798
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• 2008

Extreme value inference deals with fitting the generalized extreme value distribution model and the generalized Pareto distribution model, which are recently combined to give a single model, namely a two-dimensional non-homogeneous Poisson exceedance point process model. In this paper, we extend the two-dimensional non-homogeneous Poisson process model to include non-stationary effect or dependence on covariates and then derive the likelihood for the extended model.

• IE interfaces
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• v.17 no.1
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• pp.1-12
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• 2004

In a modern semiconductor device manufacturing industry, statistical bin limits on wafer level test bin data are used for minimizing value added to defective product as well as protecting end customers from potential quality and reliability excursion. Most wafer level test bin data show skewed distributions. By Monte Carlo simulation, this paper evaluates methods and sample size effect regarding determination of statistical bin limits. In the simulation, it is assumed that wafer level test bin data follow the Poisson distribution. Hence, typical shapes of the data distribution can be specified in terms of the distribution's parameter. This study examines three different methods; 1) percentile based methodology; 2) data transformation; and 3) Poisson model fitting. The mean square error is adopted as a performance measure for each simulation scenario. Then, a case study is presented. Results show that the percentile and transformation based methods give more stable statistical bin limits associated with the real dataset. However, with highly skewed distributions, the transformation based method should be used with caution in determining statistical bin limits. When the data are well fitted to a certain probability distribution, the model fitting approach can be used in the determination. As for the sample size effect, the mean square error seems to reduce exponentially according to the sample size.

• Journal of the Korean Society for Industrial and Applied Mathematics
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• v.13 no.1
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• pp.55-72
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• 2009

A misclassified size-biased modified power series distribution (MSBMPSD) where some of the observations corresponding to x = c + 1 are misclassified as x = c with probability $\alpha$, is defined. We obtain its recurrence relations among the raw moments, the central moments and the factorial moments. Discussion of the effect of the misclassification on the variance is considered. To illustrate the situation under consideration some of its particular cases like the size-biased generalized negative binomial (SBGNB), the size-biased generalized Poisson (SBGP) and sizebiased Borel distributions are included. Finally, an example is presented for the size-biased generalized Poisson distribution to illustrate the results.

• Steel and Composite Structures
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• v.21 no.1
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• pp.57-72
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• 2016

The Poisson ratio reduction of symmetric hygrothermal aged $[{\theta}_m/90_n]_s$ composite laminates containing a transverse cracking in mid-layer is predicted by using a modified shear-lag model. Good agreement is obtained by comparing the prediction models and experimental data published by Joffe et al. (2001). The material properties of the composite are affected by the variation of temperature and transient moisture concentration distribution in desorption case, and are based on a micro-mechanical model of laminates. The transient and non-uniform moisture concentration distribution give rise to the transient Poisson ratio reduction. The obtained results represent well the dependence of the Poisson ratio degradation on the cracks density, fibre orientation angle of the outer layers and transient environmental conditions. Through the presented study, we hope to contribute to the understanding of the hygrothermal behaviour of cracked composite laminate.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.3
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• pp.579-584
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• 2012

In this paper, drain induced barrier lowering(DIBL) has been analyzed as one of short channel effects occurred in double gate(DG) MOSFET. The DIBL is very important short channel effects as phenomenon that barrier height becomes lower since drain voltage influences on potential barrier of source in short channel. The analytical potential distribution of Poisson equation, validated in previous papers, has been used to analyze DIBL. Since Gaussian function been used as carrier distribution for solving Poisson's equation to obtain analytical solution of potential distribution, we expect our results using this model agree with experimental results. The change of DIBL has been investigated for device parameters such as channel thickness, oxide thickness and channel doping concentration.

• The Korean Journal of Applied Statistics
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• v.25 no.5
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• pp.775-783
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• 2012

Several statistical models for bivariate poisson data are suggested and used to analyze 2011 K-league data. Our interest is composed of two purposes: The first purpose is to exploit potential attacking and defensive abilities of each team. Particular, a bivariate poisson model with diagonal inflation is incorporated for the estimation of draws. A joint model is applied to estimate an association between poisson distribution and probability of draw. The second one is to investigate causes on scoring time of goals and a regression technique of recurrent event data is applied. Some related future works are suggested.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.15 no.7
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• pp.1537-1542
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• 2011

In this paper, the subthreshold characteristics have been analyzed for various oxide thickness of double gate MOSFET(DGMOSFET) using Poisson's equation with nonuniform doping distribution. The DGMOSFET is extensively been studying since it can shrink the short channel effects(SCEs) in nano device. The degradation of subthreshold swing(SS) known as SCEs has been presented using analytical for, of Poisson's equation with nonuniform doping distribution for DGMOSFET. The SS have been analyzed for, change of gate oxide thickness to be the most important structural parameters of DGMOSFET. To verify this potential and transport models of thus analytical Poisson's equation, the results have been compared with those of the numerical Poisson's equation, and subthreshold swing has been analyzed using this models for DGMOSFET.

• Transactions of the Korean Society of Mechanical Engineers
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• v.14 no.2
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• pp.407-412
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• 1990

Elastic modulus of unidirectional short fiber composite has theoretically derived with the consideration of Poisson's ratios of matrix and fiber. Unidirectional short fiber composite is modeled as an aggregate of grains developed by Kerner. Under the assumption of extra strain at fiber ends, the strain distribution along the fiber's length is determined, and the elastic modulus is derived from this distribution. For the consideration of effects of Poisson's ratio, Kerner's results for particulate composites are adapted as boundary conditions. The effect of differences in Poisson's ratio of fiber and matrix on elastic modulus is studied. Proposed equation shows a good agreement with experimental data of Halpin and Tock, et al.

• Journal of information and communication convergence engineering
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• v.10 no.2
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• pp.200-204
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• 2012

This study has presented the analysis of breakdown voltage for a double-gate metal-oxide semiconductor field-effect transistor (MOSFET) based on the doping distribution of the Gaussian function. The double-gate MOSFET is a next generation transistor that shrinks the short channel effects of the nano-scaled CMOSFET. The degradation of breakdown voltage is a highly important short channel effect with threshold voltage roll-off and an increase in subthreshold swings. The analytical potential distribution derived from Poisson's equation and the Fulop's avalanche breakdown condition have been used to calculate the breakdown voltage of a double-gate MOSFET for the shape of the Gaussian doping distribution. This analytical potential model is in good agreement with the numerical model. Using this model, the breakdown voltage has been analyzed for channel length and doping concentration with parameters such as projected range and standard projected deviation of Gaussian function. As a result, since the breakdown voltage is greatly changed for the shape of the Gaussian function, the channel doping distribution of a double-gate MOSFET has to be carefully designed.