• JSTS:Journal of Semiconductor Technology and Science
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• 제6권1호
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• pp.16-21
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• 2006

A simple doping method to fabricate a very thin channel body of the p-type FinFETs with a 20 nm gate length by solid-phase-diffusion (SPD) process was developed. Using the poly-boron-films (PBF) as a novel diffusion source of boron and the rapid thermal annealing (RTA), the p-type sourcedrain extensions of the FinFET devices with a threedimensional structure were doped. The junction properties of boron doped regions were investigated by using the $p^+-n$ junction diodes which showed excellent electrical characteristics. Single channel and multi-channel p-type FinFET devices with a gate length of 20-100 nm was fabricated by boron diffusion process using PBF and revealed superior device scalability.

• 한국분말재료학회지
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• 제24권3호
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• pp.248-253
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• 2017

In this study, we investigate the effect of the diffusion barrier and substrate temperature on the length of carbon nanotubes. For synthesizing vertically aligned carbon nanotubes, thermal chemical vapor deposition is used and a substrate with a catalytic layer and a buffer layer is prepared using an e-beam evaporator. The length of the carbon nanotubes synthesized on the catalytic layer/diffusion barrier on the silicon substrate is longer than that without a diffusion barrier because the diffusion barrier prevents generation of silicon carbide from the diffusion of carbon atoms into the silicon substrate. The deposition temperature of the catalyst and alumina are varied from room temperature to $150^{\circ}C$, $200^{\circ}C$, and $250^{\circ}C$. On increasing the substrate temperature on depositing the buffer layer on the silicon substrate, shorter carbon nanotubes are obtained owing to the increased bonding force between the buffer layer and silicon substrate. The reason why different lengths of carbon nanotubes are obtained is that the higher bonding force between the buffer layer and the substrate layer prevents uniformity of catalytic islands for synthesizing carbon nanotubes.

• 한국연소학회:학술대회논문집
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• 대한연소학회 2003년도 제27회 KOSCO SYMPOSIUM 논문집
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• pp.27-32
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• 2003

The effect of non-thermal plasma on diffusion flames in co-flow jets has been studied experimentally by adopting a dielectric barrier discharge technique. The generation of streamers was enhanced with a flame due to increased reduced electric fields by high temperature burnt gas and the abundance of ions in the flame region. The effect of streamers on flame behavior reveals that the flame length was significantly decreased as the applied voltage increased and the yellow luminosity by the radiation of soot particles was also significantly reduced. The formation of PAH and soot was influenced appreciably by the non-thermal plasma, while the flame temperature and the concentration of major species were not influence much with the plasma generation. The results demonstrated that the application of non-thermal plasma can be a viable technique in controlling soot generation in flames with low power consumption in the order of 1 W.

• 대한기계학회논문집B
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• 제28권3호
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• pp.281-288
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• 2004

Combustion using oxygen enriched air is an energy saving technology that can increase thermal efficiency by improving the burning rate and by increasing the flame temperature. Flame figures, OH radical intensities, temperature distributions and emissions concentration were examined according to oxygen enriched concentration(OEC) in a turbulent diffusion flat flame. As long as the oxygen enriched concentration was increased, the length and volume of the flat flame was decreased while OH radical intensity was raised and the flame temperature was increased. However, RMS of the fluctuating temperature was decreased, and more homogeneous temperature field was formed. Thermal NO also was increased with increase of oxygen enriched concentration, but CO was decreased due to the increase of chemical reaction rate.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.133-134
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• 2006

A simple doping method to fabricate a very thin channel body of the n-type fin field-effect-transistor (FinFET) with a 20 nm gate length by solid-phase-diffusion (SPD) process is presented. Using As-doped spin-on-glass as a diffusion source of arsenic and the rapid thermal annealing, the n-type source-drain extensions with a three-dimensional structure of the FinFET devices were doped. The junction properties of arsenic doped regions were investigated by using the $n^+$-p junction diodes which showed excellent electrical characteristics. Single channel and multi-channel n-type FinFET devices with a gate length of 20-100 nm was fabricated by As-SPD and revealed superior device scalability.

• Journal of Mechanical Science and Technology
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• 제17권12호
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• pp.2078-2086
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• 2003

As technology advances with development of new materials, it is important to measure the thermal diffusivity of material and to predict the heat transfer in the solid subject to thermal processes. The measurement of thermal properties can be done in a non-contact way using photothermal displacement spectroscopy. In this work, the thermal diffusivity was measured by analyzing the magnitude and phase of deformation gradient. We proposed a new data analysis method based on the real part of deformation gradient as the pump-probe offset value. As the result, compared with the literature value, the measured thermal diffusivities of materials showed about 3 % error.

• 한국연소학회:학술대회논문집
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• 한국연소학회 2006년도 제33회 KOSCO SYMPOSIUM 논문집
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• pp.196-201
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• 2006

Silica(SiO2) nanoparticles are used as additives in plastics and rubbers to improve mechanical, electrical, magnetic properties and optical material. Silica nanoparticles were synthesized by the gas phase thermal oxidation of several kinds of precursors in many types of reactor. Diffusion flame reactor has some advantages compared with other types of reactors. In this study, we investigated the generation of silica nanoparticles on the effect of residence time by tetraethylothosilicate(TEOS) in a turbulent diffusion flame reactor controlled by providing reactant flowrate and reactor geometry affect particle morphology, particle size and particle size distribution. To determine the flame residence time, flame length should be determined which was examined by ICCD image. Particle size, distribution and morphology were performed with TEM.

• 대한기계학회논문집B
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• 제26권12호
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• pp.1747-1755
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• 2002

A complete theoretical treatment of the photothermal displacement technique has been performed for thermal diffusivity measurement in semi-infinite solid materials. The influence of the parameters, such as radius and modulation frequency of the heating beam and the thermal diffusivity, was studied. Usually, thermal diffusivity was determined by the deformation angle and phase angle as the relative position between the heating and probe beams. In this study, we proposed the simple analysis method based on the real part of deformation gradient as the relative position between two beams. It is independent in the parameters such as power of heating beam, absorption coefficient, reflectivity, Poisson's ratio, and thermal expansion coefficient.

• 한국표면공학회지
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• 제49권1호
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• pp.104-109
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• 2016

Graphite's thermal stability facilitates its widespread use as crucibles and molds in high temperatures processes. However, carbon atoms can be rather easily detached from pores and outer surfaces of the graphite due to the weak molecular force of the c axis of graphites. Detached carbon atoms are known to become a source of dust during fabrication processes, eventually lowering the effective yield of products. As an effort to reduce these problems of dust scattering, we have fabricated SiC composites by employing Si vapor infiltration method into the pores of graphites. In order to understand the diffusion process of the Si vapor infiltration, Si and C atomic percentages of fabricated SiC composites are carefully measured and the diffusion law is used to estimate the diffusion coefficient of Si vapor. A quadratic equation is obtained from the experimental results using the least square method. Diffusion coefficient of Si vapor is estimated using this quadratic equation. The result shows that the diffusion length obtained through the Si vapor infiltration method is about 10.7 times longer than that obtained using liquid Si and clearly demonstrates the usefulness of the present method.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2000년도 춘계학술대회논문집B
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• pp.132-137
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• 2000

A complete theoretical treatment of the photothermal displacement technique has been performed for thermal diffusivity measurement in solid materials. The influence of parameters - radius and modulation frequency of pump beam and thickness of material - on the phase lag was studied. The phase decreases up to a certain position, then starts to increase and does have an asymptotic value. The position, where phase has the minimum value, is a function of thermal diffusion length thickness of sample, and radius of pump beam. A new method based on minimum phase lag is described to determine the thermal diffusivity of solid material.