• 제목/요약/키워드: Thermomigration

검색결과 9건 처리시간 0.02초

극세 폴리에스테르 스웨드의 환원세정과 열이행의 영향 (Reduction Cleaning and Thermomigration Effects on Micro Polyester SUEDE)

  • 최경연;한삼숙;이문철
    • 한국염색가공학회지
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    • 제21권6호
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    • pp.12-21
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    • 2009
  • The dyeing property of direct-spinning type and seaisland type 0.2D micro polyester nonwoven fabrics was characterized by three disperse dyes (Dorosperse Red KFFB, Blue KGBR, Yellow KRL) at $120^{\circ}C$ and $130^{\circ}C$. Before and after reduction cleaning, dyeing fastness was evaluated and the thermomigaration after heat setting at $180^{\circ}C$ for 60 min were also evaluated. Direct-spinning type fabric showed better dyeing property, wash fastness, and light fastness, but worse rub fastness than seaisland type fabric. The dyeing property and fastness of direct-spinning type fabric increased at higher dyeing temperature, whereas seaisland type fabric exhibited lower dyeing fastness and the increase of thermomigration at higher dyeing temperature. Non-fixed dye in fiber surface was removed by reduction cleaning process, then dyeing fastness was improved and thermomigration decreased. The higher dye uptake of direct-spinning type non-woven fabric caused the increase of dye molecule migration from fiber internal to fiber surface, so this fabric showed larger thermomigration than seaisland type non-woven fabric.

플립칩 Sn-3.5Ag 솔더범프의 Electromigration과 Thermomigration 특성 (Electromigration and Thermomigration Characteristics in Flip Chip Sn-3.5Ag Solder Bump)

  • 이장희;임기태;양승택;서민석;정관호;변광유;박영배
    • 대한금속재료학회지
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    • 제46권5호
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    • pp.310-314
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    • 2008
  • Electromigration test of flip chip solder bump is performed at $140^{\circ}C$ C and $4.6{\times}10^4A/cm^2$ conditions in order to compare electromigration with thermomigration behaviors by using electroplated Sn-3.5Ag solder bump with Cu under-bump-metallurgy. As a result of measuring resistance with stressing time, failure mechanism of solder bump was evaluated to have four steps by the fail time. Discrete steps of resistance change during electromigration test are directly compared with microstructural evolution of cross-sectioned solder bump at each step. Thermal gradient in solder bump is very high and the contribution of thermomigration to atomic flux is comparable with pure electromigration effect.

Effects of Thermomigration on the Washfastness of Disperse Dyes Having Different Molecular Size

  • Kim, Sung-Dong;Kim, Min-Jung;Lee, Byung-Sun;Lee, Kwon-Sun
    • Fibers and Polymers
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    • 제5권1호
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    • pp.39-43
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    • 2004
  • Effects of chemical structure of disperse dyes applied to conventional and microdenier polyesters on the dyeing property and washfastness were studied. It was found that washfastness of dyed polyester fabric is closely related to the degree of thermomigration of disperse dye during heatsetting. The bulky disperse dye, which was synthesized by substituting two acetoxy groups of C.I. Disperse Red 82 with two benzoxy groups, showed almost the same amount of absorbed dye by the microdenier polyester as C.I. Disperse Red 82, but the degree of thermomigration was low and subsequent washfastness was excellent. The high grade of washfastness of the bulky disperse dye might be caused by the increased dye-fiber interaction and the reduced mobility.

Electromigration and Thermomigration in Flip-Chip Joints in a High Wiring Density Semiconductor Package

  • Yamanaka, Kimihiro
    • 마이크로전자및패키징학회지
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    • 제18권3호
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    • pp.67-74
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    • 2011
  • Keys to high wiring density semiconductor packages include flip-chip bonding and build-up substrate technologies. The current issues are the establishment of a fine pitch flip-chip bonding technology and a low coefficient of thermal expansion (CTE) substrate technology. In particular, electromigration and thermomigration in fine pitch flipchip joints have been recognized as a major reliability issue. In this paper, electromigration and thermomigration in Cu/Sn-3Ag-0.5Cu (SAC305)/Cu flip-chip joints and electromigration in Cu/In/Cu flip chip joints are investigated. In the electromigration test, a large electromigration void nucleation at the cathode, large growth of intermetallic compounds (IMCs) at the anode, a unique solder bump deformation towards the cathode, and the significantly prolonged electromigration lifetime with the underfill were observed in both types of joints. In addition, the effects of crystallographic orientation of Sn on electromigration were observed in the Cu/SAC305/Cu joints. In the thermomigration test, Cu dissolution was accelerated on the hot side, and formation of IMCs was enhanced on the cold side at a thermal gradient of about $60^{\circ}C$/cm, which was lower than previously reported. The rate of Cu atom migration was found comparable to that of electromigration under current conditions.

해도형 극세사 폴리에스테르의 염색성 및 세탁견뢰도 향상에 관한 연구 (Dyeing Properties and Improvement of Washfastness of Ultrafine Polyester)

  • 김성동;이권선;이병선;안창희;김규식
    • 한국염색가공학회지
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    • 제15권1호
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    • pp.48-55
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    • 2003
  • As the polyester fiber becomes thinner, thermomigration that is the most important factor deteriorating the washfastness, is more dominant. For improving the washfastness of ultrafine polyester dyed with disperse dye, it is necessary either to decrease the amount of thermomigrated dyes on the fiber surface, or to use a disperse dye containing diester group in the coupling component. This paper is concerned to investigate the relation between the chemical structure of three disperse dyes and their dyeing properties and washfastness. The disperse dye whose molecular size is big, can dye ultrafine polyester with good build-up, and its washfastness is reasonably good. Other disperse dye which has diester group, shows the same dyeing properties as the standard disperse dye, and its washfastness is better than that of the standard disperse dye.

전기적 프로그램이 가능한 퓨즈 - 응용, 프로그램 및 신뢰성 (Electrically Programmable Fuse - Application, Program and Reliability)

  • 김덕기
    • 마이크로전자및패키징학회지
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    • 제19권3호
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    • pp.21-30
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    • 2012
  • Technology trend and application of laser fuse, anti-fuse, and eFUSE as well as the structure, programming mechanism, and reliability of eFUSE have been reviewed. In order to ensure eFUSE reliability in the field, a sensing circuit trip point consistent with the fuse resistance distribution, process variation, and device degradation in the circuit such as hot carrier or NBTI, as well as fuse resistance reliability must be considered to optimize and define a reliable fuse programming window.

Phthalimide계 신규 Azo dye의 Polyurethane계 섬유 염색 특성 (Dyeing Properties of Polyurethane Fiber by Novel Phthalimidyl Azo Disperse Dyes)

  • 최종윤;최재홍
    • 한국염색가공학회지
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    • 제21권6호
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    • pp.46-55
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    • 2009
  • Some phthalimidyl azo dyes containing N,N-diethyl or N,N-di($\beta$-methoxycarbonylethyl) group have been attempted to apply onto two kinds of polyurethane based materials and rationalize their dyeability and fastness comparing with those of some commercial disperse dyes. Phthalimidyl azo dye showed 66~98% of exhaustion yield at $120^{\circ}C$ by a conventional exhaust dyeing method. The dyeings were found to have a higher wash fastness with both fabrics in comparison with those of commercial dyes which indicates lower thermomigration and efficient alkali clearable properties of phthalimidyl ring and/or diester group during post-dyeing process.

등온 열처리시 알루미늄 다층 박막의 열적 안정성에 관한 연구 (A Study on the Thermal Stability in Multi-Aluminum Thin Films during Isothermal Annealing)

  • 전진호;박정일;박광자;김홍대;김진영
    • 한국표면공학회지
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    • 제24권4호
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    • pp.196-205
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    • 1991
  • Multi-level thin films are very important in ULSI applications because of their high electromigration resistance. This study presents the effects of titanium, titanium nitride and titanium tungsten underlayers of the stability of multi-aluminum thin films during isothermal annealing. High purity Al(99.999%) films have been electron-beam evaporated on Ti, TiN, TiW films formed on SiO2/Si (P-type(100))-wafer substrates by RF-sputtering in Ar gas ambient. The hillock growth was increased with annealing temperatures. Growth of hillocks was observed during isothermal annealing of the thin films by scanning electron microscopy. The hillock growth was believed to appear due to the recrystallization process driven by stress relaxation during isothermal annealing. Thermomigration damage was also presented in thin films by grain boundary grooving processes. It is shown that underlayers of Al/TiN/SiO2, Al/TiW/SiO2 thin films are preferrable to Al/SiO2 thin film metallization.

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