• Journal of Electrical Engineering and Technology
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• 제2권4호
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• pp.525-531
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• 2007

Ni(75 wt.%)-Cr(20 wt.%)-Al(3 wt.%)-Mn(4 wt.%)-Si(1 wt.%) alloy thin films were prepared using the DC magnetron sputtering process by varying the sputtering conditions such as power, pressure, substrate temperature, and post-deposition annealing temperature in order to fabricate a precision thin film resistor. For all the thin film resistors, sheet resistance, temperature coefficient of resistance (TCR), and crystallinity were analyzed and the effects of sputtering conditions on their properties were also investigated. The oxygen content and TCR of Ni-Cr-Al-Mn-Si resistors were decreased by increasing the sputtering pressure. Their sheet resistance, TCR, and crystallinity were enhanced by elevating the substrate temperature. In addition, the annealing of the resistor thin films in air at a temperature higher than $300^{\circ}C$ lead to a remarkable rise in their sheet resistance and TCR. This may be attributed to the improved formation of NiO layer on the surface of the resistor thin film at an elevated temperature.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 센서 박막재료 반도체재료 기술교육
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• pp.82-85
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• 2002

In recent years, the tantalum nitride(TaN) thin-film has been developed for the electronic resistor and capacitor. In this papers, this study presents the surface profile and sheet-resistance property relationship of reactive-sputtered TaN thin film resistor processed by buffer of Ti and Cr on alumina substrate. The TCR properties of the TaN films were discussed in terms of reactive gas ratio, ratio of nitrogen, crystallization and thin films surface morphology due to annealing temperature. It is clear that the TaN thin-films resistor electrical properties are low TCR related with it's buffer layer condition. Ti buffer layer thin film resistor having a good thermal stability and lower TCR properties then Cr buffer expected for the application to the dielectric material of passive component.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2004년도 학술대회지
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• pp.628-635
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• 2004

The characteristic of thin film resistor with low TCR( temperature coefficient of resistance ) and high precision are studied. The thin film resistor for 1/4W was fabricated and characteristic of these resistors was investigated. The fabricated device had the thickness of $2.48{\leqq}$ and the resistivity of $0.27{\omega}mm$. The electrical characteristic was evaluated by HP 4339B and 4284A instruments with HP l6339A. The profile of trimmed structure was also measured by non contact interferometer. The change of resistance and TCR increased with increasing roughness and resistance. To reduce the effect of stress annealing treatment was performed in the range of 563 to 623 K after trimming. The characteristic was improved after annealing. It is expected the fabricated device can be useful for high precision and low TCR. Fabricated thin film resistor has average deviation of resistance less than $0.35{\%}$ and TCR within 60.60ppm/K.

• E2M - 전기 전자와 첨단 소재
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• 제8권1호
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• pp.13-20
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• 1995

To develope a high precision TiAIN thin film resistor, TiAIN films were deposited on A1$_{2}$03 substrates by reactive planar magnetron cosputtering from Ti and Al targets in an Ar-N$_{2}$ atmosphere. The characteristics of the TiAIN thin film were controlled by changing of the R.F. power on Ti and Al targets, and the N$_{2}$ partial pressure. The high precision TiAIN thin film resistor with TCR(Temperature Coefficient of Resistance) of less than 10ppm/.deg. C was obtained under the R.F. power condition of 160(w)/240(w) to Ti and Al targets at the N$_{2}$ partial pressure of 7*10$^{-5}$ Torr. The composition of these films were investigated by XRD, SEM and EDS.

• 마이크로전자및패키징학회지
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• 제12권1호
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• pp.1-7
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• 2005

저항 값을 맞추기 위한 트리밍 공정이 낮은 저항온도계수와 높은 정밀성을 요구하는 박막저항기 특성에 미치는 영향에 대한 연구가 수행되었다. 스퍼터링 방법으로 제조된 박막 저항기의 트리밍 속도에 따른 저항기의 특성 변화와 온도계수의 변화가 관찰되었다. 트리밍 속도의 증가에 따라서 박막 저항기 특성은 저하되었으며, 열처리로 저항 값의 평균 편차 $0.26\%$ 및 저항온도계수 52.77(ppm/K)의 개선효과가 있었다. 1k$\Omega$와 10k$\Omega$저항기가 100k$\Omega$ 박막저항기 보다는 특성이 양호하였으며, 트리밍 속도의 치적 조건으로는 20mm/sec와 특성 개선을 할 수 있는 최적 열처리 온도는 593K였으며 최적 조건에서 제작된 저항기의 저항 값의 평균 편차는 $0.31\%$ 및 저항온도계수 10(ppm/K)미만이었다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 하계학술대회 논문집 C
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• pp.1476-1478
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• 2002

In recent years, the tantalum nitride(TaN) thin-film has been developed for the electronic resistor, inductor and capacitor. In this papers, this study presents the surface profile and sheet-resistance property relationship of reactive-sputtered TaN thin film resistor processed by TaN(tantalum nitride) on alumina substrate. The TCR properties of the TaN films were discussed in terms of crystallization and thin films surface morphology due to annealing temperature. It is clear that the TaN thin-films resistor electrical properties are low TCR related with it's annealing temperature and ambient annealing condition. Respectively, at $300{\sim}400^{\circ}C$ on vacuum and nitrogen annealed thin film resistor having a goof thermal stability and lower TCR properties then as deposited thin films expected for the application to the dielectric material of passive component.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.1014-1017
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• 2001

In recent years, The tantalum nitride(TaN) thin-film has been developed for the electronic resistor and capacitor. In this papers, The effect of thermal annealing in the temperature range of 300∼700$^{\circ}C$ on the sheet resistor properties and microistructure of tantalum nitride(TaN) thin-film deposited by RF sputtering was studied. XRD(X-ray diffractometer) and AFM were used to observe electrical properties and microstructrue of the TaN film and sheet resistance. The TCR properties of the TaN films were discussed in terms of annealing temperature, ratio of nitrogen, crystallization and thin films surface morphology due to annealing temperature. The leakage current of the TaN thin film annealed 400 $^{\circ}C$ was stabilized in the study. How its was found that the sheet resistance in the polycrystalline TaN thin film decreased with increasing the annealing temperature above 600 $^{\circ}C$ after sudden peak upen 400 $^{\circ}C$.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 추계학술대회 논문집 전기물성,응용부문
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• pp.168-170
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• 2001

The NiCr is an important material for present thin-film resistor application owing to its low TCR and thermal stability. In this work, the NiCr thin films were deposited on corning glass substrate by reactive magnetron sputtering and the annealing at temperatures range from 300 to $500^{\circ}C$ for 20 min in vacuum. X-ray, AFM, $R_s$(surface leakage current) have been used to study the structural and electrical properties of the NiCr thin films. The high precision NiCr thin films resistor with TCR(temperature coefficient of resistance) of less then 10 ppm/$^{\circ}C$ was obtained under in in-situ annealing at $300^{\circ}C$ on Cr buffer layer substrate. It is clear that the NiCr thin-films resistor electrical properties are low TCR related with it's annealing and buffer layer condition. NiCr thin film resistor having a good thermal stability and low TCR properties are expected for the application to the dielectric material of passive component.

• 한국전기전자재료학회논문지
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• 제21권1호
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• pp.57-62
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• 2008

From the progressing results, it was found that thin film using 52 wt% Ni - 38 wt% Cr - 3 wt% Al - 4 wt% Mn - 3 wt% Si target has good characteristics for low TCR (temperature coefficients of resistance) and high resistivity. The optimum sputtering condition was DC 250 W, 5 mtorr, and 50 sccm and the proper annealing condition was $350^{\circ}C$/3.5 hr in air atmosphere. At these fabricated conditions, thin film resistors with TCR values of less than ${\pm}10ppm/^{\circ}C$ were obtained. The TCR of the packaged-samples made at proper fabrication conditions was $-3{\sim}15ppm/^{\circ}C$ after the thermal cycling and $-20{\sim}180ppm/^{\circ}C$ after PCT (pressure cooker test), we could confirm reliability for the thin film resistor and find the need for enduring research about packaging method.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.81-84
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• 2004

The NiCr is an important material for present thin-film resistor application owing to its low TCR and thermal stability. In this work, the NiCr thin films were deposited on coming glass substrate by reactive magnetron sputtering and the annealing at temperatures range from 300 to $500^{\circ}C$ for 20 min in vacuum. X-ray, AFM, $R_s$(surface leakage current) have been used to study the structural and electrical properties of the NiCr thin films. The high precision NiCr thin films resistor with TCR(temperature coefficient of resistance) of less then $10\;ppm/^{\circ}C$ was obtained under in in-situ annealing at $300^{\circ}C$ on Cr buffer layer substrate. It is clear that the NiCr thin-films resistor electrical properties are low TCR related with it's annealing and buffer layer condition. NiCr thin film resistor having a good thermal stability and low TCR properties are expected for the application to the dielectric material of passive component.