• Proceedings of the Korean Magnetic Resonance Society Conference
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• 2000.01a
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• pp.23-23
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• 2000

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1103-1107
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• 2005

Single-crystal silicon thin films on glass (SOG) and on fused-quartz (SOQ) were prepared using wafer bonding and hydrogen-induced layer transfer. Thinfilm transistors (TFTs) were subsequently fabricated. The high-temperature processed SOQ TFTs show better device performance than the low-temperature processed SOG TFTs. Tensile and compressive strain was measured respectively on SOQ and SOG. Consistent with the tensile strain, enhanced electron effective mobility was measured on the SOQ TFTs.

• Proceedings of the Materials Research Society of Korea Conference
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• 1999.05a
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• pp.48-48
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• 1999

• Proceedings of the Materials Research Society of Korea Conference
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• 1996.05a
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• pp.30-30
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• 1996

• The Transactions of The Korean Institute of Electrical Engineers
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• v.67 no.3
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• pp.454-459
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• 2018

The BIPV system must be designed to reflect the architectural and electrical characteristics simultaneously because it replaces the role of the exterior material of the building, which makes it difficult to design the BIPV. The thin film type BIPV module has an electrical characteristic that the open voltage is higher and the short circuit current is lower than that of the crystalline type BIPV module. However, there are many differences in the design of the array, the collector distribution board, and the inverter in the system configuration since the crystal type BIPV module has the opposite feature. In this study, a crystalline BIPV module and a thinfilm BIPV module were applied to actual buildings. As a result, the elements to be considered in designing BIPV system were derived, and the architectural and electrical characteristics were mutually analyzed.

• 제어로봇시스템학회:학술대회논문집
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• 2005.06a
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• pp.389-392
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• 2005

In the maskless photolithography based on the Digital Micromirror Device (DMD) by Texas Instruments Inc. (TI), the micromirror array works as a virtual photomask to write patterns directly onto Flat Panel Display (FPD) at high speed with low cost. However, it is neither simple to generate region-based patterns for the micromirror array nor easy to deliver sequences of patterns for the micromirror controller. Moreover, the quality of lithography yields the precise synchronization between generating sequence of patterns and irradiation rate off micromirrors. In this study, the region-based pattern generating system for maskless photolithography is devised. To verify salient features of devised functionalities, the prototype system is implemented and the system is evaluated with actual DMD based photolithography. The results show that proposed pattern generating method is proper and reliable. Moreover, the devised region-based pattern generating system is robust and precise enough to handle any possible user specified mandate and to achieve the quality of photolithography required by FPD manufacturer.

• Applied Microscopy
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• v.39 no.3
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• pp.277-281
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• 2009

Practical difficulties for preparing a good crosssectional specimen of GaN-based materials for transmission electron microscopy have arisen due to large difference of mechanical properties between hard ceramic substrate and soft GaN-layered materials. Uneven polishing, sudden cracking, delamination, and selective sputtering during the conventional wedge polishing technique are often encountered as experimental hindrances. The preparation technique based on Strecker's method can be applied to overcome these difficulties, which eventually leads to mechanically stable TEM samples independent of the mechanical properties of materials. The basic idea is to use hard ceramic dummy filler for embedding the sample of interest into the dummy frame. In this study, we applied this technique into preparing cross-sectional TEM specimen of the GaN-based materials with mechanical instability and demonstrated usefulness of this hard dummy filler method in which the possible modifications of the sample of interest during the preparation must be avoidable. In addition, practical precautions during the preparation were discussed.

• Journal of the Korean Vacuum Society
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• v.5 no.3
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• pp.263-267
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• 1996

Reactive ion etching of Pt thinfilm was studied using $CCl_2F_2$, Ar, and $O_2$ . Etch rate of the Pt increased as the total pressure decreases and the RF power increased, while the flow rate of $CCl_2F_2$ had little effect on the Pt etch rate. Addition of $O_2$ had no effect on Pt etch rate up to 20% $O_2$ Selectivity between Pt and photoresist increased as the pressure decreased and the RF power increased, making it possible to pattern a thicker Pt layer with a thinner photoresist. A maximum etch rate of 300$\AA$/min was obtained at $CCl_2F_2$ flow rate of 20 sccm. RF power of 400 W, and the total pressure of 60mTorr.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1629-1631
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• 2007

Significant process in the performance and commercialization of full-color thin-film electroluminescent(EL) displays has been achieved. This is due to the remarkable progress made in the performance of exiting EL phosphors, development of new phosphor materials, and design of new EL phosphor structures. In this paper, we fabricated thinfilm EL devices with ZnS buffer and $BaTiO_3$ electric layer with on top and bottom of phosphor layer. The effect of ZnS and $BaTiO_3$ layer on the luminance of EL device were studied.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1305-1307
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• 2007

We show that the electrical properties of organic thinfilm transistors(OTFTs) can be enhanced by controlling the morphology of interface between screen printed electrodes and gate dielectrics. Modified surface of the insulator layer($SiO_2$) affect on the interface energy of electrode on $SiO_2$ layer. Contact angle measurement and FT-IR spectrum shows that the interface is properly modified. OTFTs device with high efficiency has been realized through modification of interface layer.