• Journal of Korean Society of Occupational and Environmental Hygiene
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• v.25 no.4
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• pp.573-583
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• 2015

Objectives: This study was carried out to evaluate the effect of noise exposure and aging on changes in hearing threshold level and the relationship between age and noise. Materials: The author selected 274 male shipyard and assembly line workers as the noise exposed group and 582 males not exposed to noise as the general population group. Data were collected from five years of consecutive annual audiometric tests performed from 2008 to 2012. Results: In the general population and noise exposed groups, there was a reverse phenomenon that hearing threshold level for 2009 was lower than that of 2008, which seemed to be due to the learning effect, but from 2010 hearing threshold level increased. In the noise exposed group, the mean hearing threshold level in the left ear was significantly higher than that for right ear. In the general population group, the older was the age, the higher was the hearing threshold level, especially at 4000 Hz. In the general population and noise exposed groups, frequency, age group and noise exposure independently affected hearing threshold level, and there was no relationship between age and noise exposure. Over all frequencies, the change of hearing threshold level was larger in the noise exposed group than in the general population group. In the noise exposed group below thirty years old, the change at 4000 Hz was remarkable. Conclusions: Age and noise exposure seem to affect hearing threshold level independently and contribute to an additive effect on hearing threshold level.

• Journal of information and communication convergence engineering
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• v.8 no.1
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• pp.107-111
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• 2010

This paper has presented the dependence of the threshold voltage on back gate bias and drain voltage for FinFET. The FinFET has three gates such as the front gate, side and back gate. Threshold voltage is defined as the front gate bias when drain current is 1 micro ampere as the onset of the turn-on condition. In this paper threshold voltage is investigated into the analytical potential model derived from three dimensional Poisson's equation with the variation of the back gate bias and drain voltage. The threshold voltage of a transistor is one of the key parameters in the design of CMOS circuits. The threshold voltage, which described the degree of short channel effects, has been extensively investigated. As known from the down scaling rules, the threshold voltage has been presented in the case that drain voltage is the 1.0V above, which is set as the maximum supply voltage, and the drain induced barrier lowing(DIBL), drain bias dependent threshold voltage, is obtained using this model.

• Korean Journal of Remote Sensing
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• v.37 no.1
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• pp.69-84
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• 2021

Awareness of boats is a main issue in areas of fishery management, illegal fishing, and maritime traffic, etc. For the awareness, Automatic Identification System (AIS) and Vessel-Pass System (V-PASS) have been widely used to collect the boat-related information. However, only using these systems makes it difficult to collect the accurate information. Recently, satellite-based data has been increasingly used as a cooperative system. In 2015, U.S. National Oceanic and Atmospheric Administration (NOAA) developed a boat detection algorithm using Visible Infrared Imaging Radiometer Suite (VIIRS) Day & Night Band (DNB) data. Although the detections have been widely utilized in many publications, it is difficult to estimate the night-time fishing boats immediately. Particularly, it is difficult to estimate the threshold due to the lunar irradiation effect. This effect must be corrected to apply a single specific threshold. In this study, the moon phase was considered as the main frequency of this effect. Considering the moon phase, relational expressions are derived and then used as offsets for relative correction. After the correction, it shows a significant reduction in the standard deviation of the threshold compared to the threshold of NOAA. Through the correction, this study can set a constant threshold every day without determination of different thresholds. In conclusion, this study can achieve the detection applying the single specific threshold regardless of the moon phase.

• The Journal of Industrial Distribution & Business
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• v.12 no.8
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• pp.41-52
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• 2021

Purpose: The study aims to analyze effects of wage on FDI inflows based on the threshold of institutional quality in 14 developing economies of Southeast and South Asia over the period from 2000-2017. Research design, data, and methodology: The study applies a fixed effect panel threshold regression. As a proxy for the institutional quality, it uses the six components of Worldwide Governance Indicators or a compound index obtained by an average of the six components. The data were taken from World Bank, the Chinn & Ito Database, and UNCTAD. To the best of our knowledge, no researches so far have considered the threshold of institutional quality in estimating the effect of wage on FDI inflows. Results: The composite index and each component of the six indicators of institutional quality except for voice and accountability, and regulatory quality are found to have nonlinear effects on FDI inflows. When the institutional quality is below the threshold, wage affects FDI inflows negatively. When the institutional quality is above the threshold, however, wage does not significantly affect FDI inflows. Conclusions: The effect of wage on FDI inflows varies depending on whether the institutional quality of the target countries is above or below the threshold.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.5 no.5
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• pp.853-860
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• 2001

This paper presents the new two denoising methods using wavelet. One is new spatially selective noise filtration(NSSNF) using spatial correlation and the other is undecimated discrete wavelet transform (UDWT) threshold-based. NSSNF got the flexible gain special property of SNR adding new parameter at the existing SSNF and UDWT had superior denosing effect than orthogonal wavelet transform(OWT) applied soft-threshold by applied hard-threshold. We selected additive white gaussian noise(AWGN) in this test environment. Also we analyzed and compared ousting denoising method using SNR as standard of judgement of improvemental effect.

• Korean Journal of Materials Research
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• v.19 no.12
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• pp.644-648
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• 2009

Temperature dependency of resistivity of the carbon black-polyethylene composites below and above percolation threshold is studied based on the electrical conduction mechanism. Temperature coefficient of resistance of the composites below percolation threshold changed from minus to plus, increasing volume fraction of carbon black; this trend decreased with increasing volume fraction of carbon black. The temperature dependence of resistivity of the composites below percolation threshold can be explained with a tunneling conduction model by incorporating the effect of thermal expansion of the composites into a tunneling gap. Temperature coefficient of resistance of the composites above percolation threshold was positive and its absolute value increased with increasing volume fraction of carbon black. By assuming that the electrical conduction through percolating paths is a thermally activated process and by incorporating the effect of thermal expansion into the volume fraction of carbon black, the temperature dependency of the resistivity above percolation threshold has been well explained without violating the universal law of conductivity. The apparent activation energy is estimated to be 0.14 eV.

• The Journal of Industrial Distribution & Business
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• v.12 no.10
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• pp.31-41
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• 2021

Purpose: This study estimates the threshold values of institutional quality through investigating the non-linear effect of six sub-indices of Worldwide Governance Indicators on FDI inflows in 34 developing countries in Asia and Eastern Europe over the period from 2000-2017. Research Design, data and methodology: GMM EGLS is employed which does not include the lagged value of the dependent variable as an independent variable. As a proxy for the institutional quality, either one of the six sub-indices of WGI from World Bank or the composite index obtained through a principal component analysis is used in a separate model. Results: An improvement in institutional quality, when the quality stays below a certain threshold level, does not increase FDI inflows, and only when the quality is above the threshold, it can positively influence FDI inflows. The threshold values of political stability and absence of violence, government effectiveness, and rule of law are relatively higher than those of the other dimensions of WGI. Conclusion: Institutional quality of the developing economies of Asia and Eastern Europe has a non-linear effect on FDI inflows. The target countries need to upgrade their institutional quality above the threshold in order to attract more FDIs.

• Journal of Sensor Science and Technology
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• v.23 no.2
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• pp.114-121
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• 2014

We report a polysilicon active area membrane field effect transistor (PSAFET) pressure sensor for low stress deflection of membrane. The PSAFET was produced in conventional FET semiconductor fabrication and backside wet etching. The PSAFET located at the front side measured pressure change using 300 nm thin-nitride membrane when a membrane was slightly strained by the small deflection of membrane shape from backside with any physical force. The PSAFET showed high sensitivity around threshold voltage, because threshold voltage variation was composed of fractional function form in sensitivity equation of current variation. When gate voltage was biased close to threshold voltage, a fractional function form had infinite value at $V_{tn}$, which increased the current variation of sensitivity. Threshold voltage effect was dominant right after the PSAFET was turned on. Narrow transistor channel established by small current flow was choked because electron could barely cross drain-source electrodes. When gate voltage was far from threshold voltage, threshold voltage effect converged to zero in fractional form of threshold voltage variations and drain current change was mostly determined by mobility changes. As the PSAFET fabrication was compatible with a polysilicon FET in CMOS fabrication, it could be adapted in low pressure sensor and bio molecular sensor.

• Journal of the Korean Academy of Clinical Electrophysiology
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• v.1 no.2
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• pp.69-76
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• 2003

The purpose of this study was to determine the effect of transcutaneous electrical nerve stimulation(TENS) on the alteration of pressure pain threshold of myofascial trigger points. We used fifty nine patients with upper trapezius mayofascial pain syndrome. Participants classified according to each group in conventional TENS(high rate, low intensity) and acupuncture like TENS(low rate, high intensity). The test was measured continuously pre test, post-test by algometer. The following results were obtained; 1. Pressure pain threshold were significantly increased in all groups(p<.001). 2. In comparison between groups, pressure pain threshold were not significantly differenced. These results lead us to the conclusion that each method by TENS were significantly increased pressure pain threshold of upper trapezius trigger points. Therefore, a further direction of this study will be to provide more evidence that TENS method have an effect on pressure pain threshold of myofascial trigger points.

• Korean Journal of Materials Research
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• v.25 no.12
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• pp.678-682
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• 2015

The electrical property of polymer matrix composites with added carbon powder is studied based on the temperature dependency of the conduction mechanism. The temperature coefficient of the resistance of the polymer matrix composites below the percolation threshold (x) changed from negative to positive at 0.20 < x < 0.21; this trend decreased with increasing of the percolation threshold. The temperature dependence of the electrical property(resistivity) of the polymer matrix composites below the percolation threshold can be explained by using a tunneling conduction model that incorporates the effect of the thermal expansion of the polymer matrix composites into the tunneling gap. The temperature coefficient of the resistance of the polymer matrix composites above the percolation threshold has a positive value; its absolute value increased with increasing volume fraction of carbon powder. By assuming that the electrical conduction through the percolating paths is a thermally activated process and by incorporating the effect of thermal expansion into the volume fraction of the carbon power, the temperature dependency of the resistivity above the percolation threshold can be well explained without violating the universal law of conductivity.