• Journal of the Korean institute of surface engineering
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• v.24 no.1
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• pp.34-34
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• 1991

Corrosion behavior of TiN coated steel was studied in terms of thickness of interlayer Ti and TiN coating TiN was are ion plated to a thickness of 1$\mu\textrm{m}$ and 2$\mu\textrm{m}$ respectively with interlayer coating of Ti of 1$\mu\textrm{m}$, 2$\mu\textrm{m}$ and 3$\mu\textrm{m}$. Corrosion resistance of TiN coated steel was evaluated by anodic palarization test in 1N H2SO4 as well as salt spray test. Porosity of each coating was also tested by using SO2 test method. Corrosion current density decreased with increasing TiN coating thickness and Ti interlayer coating markedly enhanced the corrosion resistance. Ti interlayer coating of 2$\mu\textrm{m}$ and 3$\mu\textrm{m}$ prior to 2$\mu\textrm{m}$ TiN coating decreased the corrosion current density of active range by an order of 4 and that of passive range by an order of 2. This improvement was associated with the retardation of corrosive agent penetration with increasing coating thickness and inherent corrosion resistance of Ti interlayer. Ti interlayer coating was also very effective in improvement of corrosion resistance under salt atmosphere.

• Journal of the Korean institute of surface engineering
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• v.25 no.1
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• pp.34-39
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• 1992

Corrosion behavior of TiN coated steel was studied in terms of thickness of interlayer Ti and TiN coating. TiN was arc ion plated to a thickness of 1$\mu\textrm{m}$ and 2$\mu\textrm{m}$ respectively with interlayer coating of Ti of 1$\mu\textrm{m}$, $2\mu\textrm{m}$ and $3\mu\textrm{m}$. Corrosion resistance of TiN coated steel was evaluated by anodic palarization test in 1N $H_2$SO$_4$ as well as salt spray test. Porosity of each coating was also tested by using $SO_2$ test method. Corrosion current density decreased with increasing TiN coating thickness and Ti interlayer coating markedly enhanced the corrosion resistance. Ti interlayer coating of $2\mu\textrm{m}$ and $3\mu\textrm{m}$ prior to $2\mu\textrm{m}$ TiN coating decreased the corrosion current density of active range by an order of 4 and that of passive range by an order of 2. This improvement was associated with the retardation of corrosive agent penetration with increasing coating thickness and inherent corrosion resistance of Ti interlayer. Ti interlayer coating was also very effective in improvement of corrosion resistance under salt atmosphere.

• Journal of the Korean institute of surface engineering
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• v.26 no.2
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• pp.55-62
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• 1993

The effect of interlayer coating thickness of Ni and Ti on corrosion behavior was studied for TiN ion plat-ed steel plate. Interlayer coating was carried out in a single and bi-layer to a various thickness combination prior to final TiN coating. Corrosion behavior was evaluated by anodic polarization test in 1N H2SO4 as well as salt spray test. Ni interlayer coating was effectived in reducing corrosion current density of active region and Ti interlayer coating over Ni coating reduced the anodic corrosion current density by an order of 4 with increasing the thickness of Ti up to$ 3\mu\textrm{m}$. The improvement of corrosion resistance by Ni/Ti interlayer coating was attributed to the effective prevention of penetration of active corrosion agent resulting from the inherent corrosion resistance of Ni and Ti. Putting corrosion behavior was observed from salt spray test result for all specimens and corrosion resistance at salt atmosphere was enhanced with increasing Ni and Ti thickness, Cor-lay TiN coating was spalled out by the generation of corrosion products.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.7
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• pp.537-542
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• 2012

DSSCs efficiency by thickness of $TiO_2$ photoelectrode and thickness differences between two substrates studied. DSSCs is made of the doctor blade method and photoelectrode annealing temperature elevated in a different ways. In addition, cells efficiencies of according to the different thickness between $TiO_2$ photoelectrode substrate and Pt counter electrode was measured. Efficiency of DSSCs made with $TiO_2$ photoelectrode of 18 ${\mu}m$ thickness and the gap difference between the substrate 28 ${\mu}m$ shows a highest 4.805% efficiency.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.2
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• pp.146-153
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• 1998

The optical near-field patterns, propagation loss and mode sizes of x-cut $Ti:LiNbO_3$ optical waveguide which was fabricated by Ti-diffusion varying with Ti strip thickness in wet oxygen atmosphere were discussed at optical wavelength 1550nm. As Ti thickness increased from $760{\AA}$, the insertion loss of waveguide was decreased. But at Ti thickness $1500{\AA}$, mode sizes are widely broadened. The Ti thickness of below $1100{\AA}$ and above $1500{\AA}$ showed negative effects to propagation loss and fiber coupling. The best Ti thickness for fabricating low propagation loss and good fiber coupling was inferred to be between $1100{\AA}-1500{\AA}$ in our conditions. And for Ti thickness $1150{\AA}$, its propagation loss, horizontal/vertical mode sizes were showed 1.61 dB/cm, $11.9/8.9{\mu}m$ for TM, 0.22 dB/cm, $12.0/9.1{\mu}m$ for TE respectively.

• Korean Journal of Materials Research
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• v.10 no.1
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• pp.90-96
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• 2000

The effects of the type and thickness of underlayers on the crystallographic texture and the sheet resistance of aluminum thin films were studied. Sputtered Ti and Ti/TiN were examined as the underlayer of the aluminum films. The texture and the sheet resistance of the metal thin film stacks were investigated at various thicknesses of Ti or TiN, and the sheet resistance was measured after annealing at $400^{\circ}C$ in an nitrogen ambient. For the Ti underlayer, the minimum thickness to obtain excellent texture of aluminum <111> was 10nm, and the sheet resistance of the metal stack was greatly increased after annealing due to the interdiffusion and reaction of Al and Ti. TiN between Ti and Al could suppress the Al-Ti reaction, while it deteriorated the texture of the aluminum film. For the Ti/TiN underlayer, the minimum Ti thickness to obtain excellent texture of aluminum <111> was 20nm, and the minimum thickness of TiN to function as a diffusion barrier between Ti and Al was 20nm.

• Transactions on Electrical and Electronic Materials
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• v.18 no.2
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• pp.93-96
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• 2017

The structural, electrical and optical properties of Ti thin films fabricated by dual magnetron sputtering were investigated under various film thicknesses. The fabricated Ti thin films exhibited uniform surfaces, crystallinity, various grain sizes, and with various film thicknesses. Also, the crystallinity and grain size of the Ti thin films increased with the increase of film thickness. The electrical properties of Ti thin films improved with the increase of film thickness. The results showed that the performance of TCO-less DSSC critically depended on the film thickness of the Ti working electrodes, due to the conductivity of Ti thin film. However, the maximum conversion efficiency of TCO-less DSSC was exhibited at the condition of 100 nm thickness due to the surface scattering of photons caused by the variation of grain size.

• Journal of the Korean Ceramic Society
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• v.21 no.3
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• pp.266-270
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• 1984

The photoelectrochemical properties of the reduced $TiO_2$ceramic electrodes are investigated varying the thickness of the electrodes and the amounts of $Sb_2O_3$ as dopant. As the thickness of the undoped. $TiO_2$ceramic electrode increases the photocurrent tends to decrease. However for the R-F sputtered $TiO_2$ thin film electrodes the photocurrent tends to increase to about 1$\mu\textrm{m}$ thick and then decreases with increasing thickness. For the $TiO_2$ ceramic electrodes doped with $Sb_2O_3$ the photocurrent decreases with inreasing the amounts of dopant and in the case of rapid cooling in air without reduction treatment the photocurrent shows lower value. Also visible light excitation is observed at 500~550(nm) wavelength for the $TiO_2$ ceramic electrodes doped with $Sb_2O_3$comparing wtih the $TiO_2$ ceramic electrodes (~420nm)

• Proceedings of the Korean Magnestics Society Conference
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• 2000.09a
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• pp.369-376
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• 2000

Change of magnetic properties in CoCrPt/Ti perpendicular media with varying CoCrPt films thickness has been studied. As CoCrPt films thickness increase, the Ms(magnetization saturation) drastically increases at thinner thickness and gradually increases with further increase in thickness from 25nm. This Ms behaviour is associated with primarily the formation of "amorphous-like" reacted layer by intermixing of CoCrPt and Ti at CoCrPt/Ti interface and secondarily change of Cr segregation mode with varying the CoCrPt films thickness. Magnetic domain structure distinctively changes with increasing CoCrPt magnetic layer(ML) thickness. Also the strength of exchange coupling measured from the slope in demagnetizing region in M-H loop changes with ML thickness. Details of the above magnetic properties will be discussed. The expansion of lattice parameters a and c at thinner thickness suggests that Cr segregation mode may be connected with the residual stress of the films. Finally, negative nucleation field(Hn) behaviour with the exchange slope will be reported.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.1
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• pp.23-29
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• 1997

Effects of Co thickness on the formation of epitaxial $CoSi_2$ from the Co/Ti bilayer have been investigated. Ti and Co were sequentially deposited with the Ti thickness fixed at 5 or 10nm, while the Co thickness was varied from 5 to 30nm. The metal-deposited samples were then rapidly thermal-annealed in $N_2$ at $900^{\circ}C$ for 20 sec. Material properties of $CoSi_2$ thin films were analyzed by the 4-point probe, XRD, AES, andXTEM. When the as-deposited Co thickness was below 15nm, the $CoSi_2$ with high resistivity and rough interface was formed. On the other hand, when the Co thickness was above 15 nm, the epitaxial $CoSi_2$ with the resistivity of about 16 ~ 19 $\mu\Omega.cm$, uniform composition and thickness and flat interface was formed. Initial Ti thickness has sizable effect on the formation of $CoSi_2$, when the Co layer was very thin (~ 5 nm). But there was no significant effect of the Ti thickness for the initial Co thickness of above 15 nm.