• Title/Summary/Keyword: Ti-Pd

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Corrosion Behavior of Ti-Pd System Alloys by Microstructural changes (Ti-Pd계 합금의 미세조직변화에 따른 부식거동)

  • Cha, Sung-Soo;Kwak, Dong-Ju;Nam, Sang-Yong
    • Journal of Technologic Dentistry
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    • v.30 no.2
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    • pp.9-16
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    • 2008
  • The surface microstructural changes, mechanical properties and corrosion resistance of Ti-Pd alloys for dental biomaterials have been investigated. Ti, Ti-Pd alloys were melted in arc furnace and the corrosion resistance of Ti-Pd alloys was evaluated by anodic polarization test. The surface microstructural changes and mechanical properties of Ti-Pd alloys were analysed by scanning electron microscope and Vickers micro-hardness tester. The vickers hardnees of pure Ti improved by addition of Pd but Ti-25Pd alloy showed decreasing compared with Ti-15Pd. And anodic polarization and potentiostatic test were conducted in 5% HCl to quantify the resistance to corrosion with the addition of Pd, There was no significant difference in corrosion resistance between pure Ti, Ti-5Pd and Ti-15Pd alloy. However, Ti-25Pd alloy showed decreasing compared with pure Ti in corrosion resistance. From these results, it was concluded that newly formulated Ti-15Pd experimental alloy have adequate hardness and high corrosion resistance, and this alloy is promising candidate for a successful dental casting alloy.

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Development of Pd/TiO2 Catalysts with La2O3 Addition and Study on the Performance Improvement of H2 Oxidation at Room Temperature (La2O3가 첨가된 Pd/TiO2 촉매의 개발 및 H2 상온산화 반응에서의 성능 향상 연구)

  • Lee, Dong Yoon;Kim, Sung Chul;Lee, Sang Moon;Kim, Sung Su
    • Applied Chemistry for Engineering
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    • v.31 no.6
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    • pp.674-678
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    • 2020
  • In this study, a Pd/TiO2 catalyst which oxidized H2 at room temperature without an additional energy source was prepared. And a specific surface area of TiO2 as a support was not proportional to H2 oxidation reaction performance of Pd/TiO2 catalyst. In addition La2O3 was added to Pd/TiO2 catalyst in order to evaluate the performance effect due to the change of catalysts physical properties. A Pd/La2O3-TiO2 was prepared by adding different amounts of La2O3 to TiO2 and CO chemisorption analysis was performed. Compared to the conversion rate (14% at 0.5% H2) of the Pd/TiO2(G) catalyst, the Pd/La2O3-TiO2 catalyst showed 74% which was improved by more than five times. It was found that the larger the metal dispersion of Pd as an active metal is, the more favorable to H2 oxidation reaction is. However, when the added La2O3 amount exceeded 10%, the catalyst performance decreased again. Finally, it was concluded that the physical properties of the Pd/La2O3-TiO2 catalyst have a dominant influence on the catalytic activity until 0.3~0.5% of injected H2 concentrations and the catalyst reaction rate was controlled by substance transfer from 1% or more concentrations of H2.

Electrical characteristics of GaAs MESFET according to the heat treatment of Ti/Au and Ti/Pd/Au schottky contacts (Ti/Au, Ti/Pd/Au 쇼트키 접촉의 열처리에 따른 GaAs MESFET의 전기적 특성)

  • 남춘우
    • Electrical & Electronic Materials
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    • v.8 no.1
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    • pp.56-63
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    • 1995
  • MESFETs of the Ti/Au and Ti/Pd/Au gate were fabricated on n-type GaAs. Interdiffusion at Schottky interfaces, Schottky contact properties, and MESFET characteristics with heat treatment were investigated. Ti of Ti/Au contact and Pd of Ti/Pd/Au contact acted as a barrier metal against interdiffusion of Au at >$220^{\circ}C$. Pd of Ti/Pd/Au contact acted as a barrier metal even at >$360^{\circ}C$, however, Ti of Ti/Au contact promoted interdiffusion of Au instead of role of barrier metal. As the heat treatment temperature increases, in the case of both contact, saturated drain current and pinch off voltage decreased, open channel resistance increased, and degree of parameter variation in Ti/Au gate was higher than in Ti/Pd/Au gate at >$360^{\circ}C$ Schottky barrier height of Ti/Au and Ti/Pd/Au contacts was 0.69eV and 0.68eV in the as-deposited state, respectively, and Fermi level was pinned in the vicinity of 1/2Eg. As the heat treatment temperature increases, barrier height of Ti/Pd/Au contact increased, however, decreased at >$360^{\circ}C$ in the case of Ti/Au contact. Ideality factor of Ti/Au contact was nearly constant regardless of heat treatment, however, increased at >$360^{\circ}C$ in the case of Ti/Au contact. From the results above, Ti/Pd/Au was stable gate metal than Ti/Au.

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A Study on the Hydrogen treatment of It and Ti-pd Alloy (티타늄 및 티나늄-팔라듐 합금의 수소처리에 관한 연구)

  • Cha, Sung-Soo
    • Journal of Technologic Dentistry
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    • v.15 no.1
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    • pp.5-25
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    • 1993
  • Effects of hydrogenation on microstructure and mechanical properties of pure Ti and Ti-0.15Pd alloy have been studied by means of optical microscopy, differential scanning calorimeter(DSC), Xray diffraction and micro vicker's hardness test. Grain size of pure Ti and Ti-0.15Pd alloy decresed largely by hydrogenation finer than that of pure Ti and the grain size refinement was evedent in Ti-0.15Pd alloy than that in pure Ti. Ti-.015Pd alloy carried out solution treatment at 950$^{\circ}C$, the transformation of $\alpha$' martensite was occured. The amount of Hydrogen absorption in Ti-.015Pd alloy was higher than that in pure Ti. Decomposition of hydride in pure titanium and Ti-0.15Pd alloy increased largely by hydrogenation, and micro vicker's hardness of Ti-.015Pd alloy was largely than that of pure Ti by 30% after hydrogenation. The micro vicker's hardness of Ti-0.15Pd alloy after solution treatment and dehydrogenation were higher at $\beta$ phase ranger(950$^{\circ}C$) than that phase range(750$^{\circ}C$).

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Comparison of Bonding Characteristics of Hydrogen in Ti2Pd and Pd2Ti Alloys

  • Kang, Dae-Bok
    • Bulletin of the Korean Chemical Society
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    • v.32 no.6
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    • pp.1879-1883
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    • 2011
  • The electronic structure and bonding in $Ti_2Pd$ and $Pd_2Ti$ alloys with and without hydrogen as an interstitial atom were studied by performing extended Huckel tight-binding band calculations. The hydrogen absorption near an octahedral site is found to be a favorable process in $Ti_2Pd$ rather than in $Pd_2Ti$. In metal hydrides, the metal-hydrogen bonding contribution is crucial to the stability of the system. The stronger interaction of hydrogen with Ti atoms in $Ti_2PdH_2$ than with Pd atoms in $Pd_2TiH_2$ is analyzed by perturbation theory.

Two Anhydrous Zeolite X Crystal Structures, $Pd_{18}Ti_{56}Si_{100}Al_{92}O_{384} and Pd_{21}Tl_{50}Si_{100}Al_{92}O_{384}$

  • Yun, Bo Yeong;Song, Mi Gyeong;Lee, Seok Hui;Kim, Yang
    • Bulletin of the Korean Chemical Society
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    • v.22 no.1
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    • pp.30-36
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    • 2001
  • The crystal structures of fully dehydrated $Pd^{2+}$ - and $TI^{+}$ -exchanged zeolite X, $Pd_{18}TI_{56}Si_{100}Al_{92}O_{384}(Pd_{18}TI_{50-}X$, a = $24.935(4)\AA$ and $Pd_{21}TI_{50}Si_{100}Al_{92}O_{384}(Pd_{21}TI_{50-}X$ a = $24.914(4)\AA)$, have been determined by single-crystal X-ray diffraction methods in the cubic space group Fd3 at $21(1)^{\circ}C.$ The crystals were prepared using an exchange solution that had a $Pd(NH_3)_4Cl_2\;:TINO_3$ mole ratio of 50 : 1 and 200 : 1, respectively, with a total concentration of 0.05M for 4 days. After dehydration at $360^{\circ}C$ and 2 ${\times}$$10^{-6}$ Torr in flowing oxygen for 2 days, the crystals were evacuated at $21(1)^{\circ}C$ for 2 hours. They were refined to the final error indices $R_1$ = 0.045 and $R_2$ = 0.038 with 344 reflections for $Pd_{18}Tl_{56-}X$, and $R_1$ = 0.043 and $R_2$ = 0.045 with 280 reflections for $Pd_{21}Tl_{50-}X$; I > $3\sigma(I).$ In the structure of dehydrated $Pd_{18}Tl_{56-}X$, eighteen $Pd^{2+}$ ions and fourteen $TI^{+}$ ions are located at site I'. About twenty-seven $TI^{+}$ ions occupy site II recessed $1.74\AA$ into a supercage from the plane of three oxygens. The remaining fifteen $TI^{+}$ ions are distributed over two non-equivalent III' sites, with occupancies of 11 and 4, respectively. In the structure of $Pd_{21}Tl_{50-}X$, twenty $Pd^{2+}$ and ten $TI^{+}$ ions occupy site I', and one $Pd^{2+}$ ion is at site I. About twenty-three $TI^{+}$ ions occupy site II, and the remaining seventeen $TI^{+}$ ions are distributed over two different III' sites. $Pd^{2+}$ ions show a limit of exchange (ca. 39% and 46%), though their concentration of exchange was much higher than that of $TI^{+}$ ions. $Pd^{2+}$ ions tend to occupy site I', where they fit the double six-ring plane as nearly ideal trigonal planar. $TI^{+}$ ions fill the remaining I' sites, then occupy site II and two different III' sites. The two crystal structures show that approximately two and one-half I' sites per sodalite cage may be occupied by $Pd^{2+}$ ions. The remaining I' sites are occupied by $TI^{+}$ ions with Tl-O bond distance that is shorter than the sum of their ionic radii. The electrostatic repulsion between two large $TI^{+}$ ions and between $TI^{+}$ and $Pd^{2+}$ ions in the same $\beta-cage$ pushes each other to the charged six-ring planes. It causes the Tl-O bond to have some covalent character. However, $TI^{+}$ ions at site II form ionic bonds with three oxygens because the super-cage has the available space to obtain the reliable ionic bonds.

Al Doping Effect of Pd/TiO2 for Improved Hydrogen Detection (수소 감지 성능 향상을 위한 Pd/TiO2 분말에서의 Al 도핑 효과)

  • Lee, Yeongan;Seo, Hyungtak
    • Journal of Sensor Science and Technology
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    • v.23 no.3
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    • pp.207-210
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    • 2014
  • $TiO_2$ oxide semiconductor is being widely studied in various applications such as photocatalyst and photosensor. Pd/$TiO_2$ gas sensor is mainly used to detect $H_2$, CO and ethanol. This study focus on increasing hydrogen detection ability of Pd/$TiO_2$ in room temperature through Al-doping. Pd/$TiO_2$ was fabricated by the hydrothermal method. Contacting to Aluminum (Al) foil led to Al doping effect in Pd/$TiO_2$ by thermal diffusion and enhanced hydrogen sensing response. $TiO_2$ nanoparticles were sized at ~30 nm of diameter from scanning electron microscope (SEM) and maintained anatase crystal structure after Al doping from X-ray diffraction analysis. Presence of Al in $TiO_2$ was confirmed by X-ray photoelectron spectroscopy at 73 eV. SEM-energy dispersive spectroscopy measurement also confirmed 2 wt% Al in Pd/$TiO_2$ bulk. The gas sensing test was performed with $O_2$, $N_2$ and $H_2$ gas ambient. Pd/Al-doped $TiO_2$ did not response $O_2$ and $N_2$ gas in vacuum except $H_2$. Finally, the normalized resistance ratio ($R_{H2on}/R_{H2off}$) of Pd/Al-doped $TiO_2$ increases about 80% compared to Pd/$TiO_2$.

Pd/Si-based Emitter Ohmic Contacts for AlGaAs/GaAs HBTs (AlGaAs/GaAs HBT 에미터 전극용 Pd/Si계 오믹 접촉)

  • 김일호
    • Journal of the Korean Vacuum Society
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    • v.12 no.4
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    • pp.218-227
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    • 2003
  • Pd/Si/Ti/Pt and Pd/Si/Pd/Ti/Au ohmic contacts to n-type InCaAs were investigated for applications to AlGaAs/GaAs HBT emitter ohmic contacts. In the Pd/Si/Ti/Pt ohmic contact, as-deposited contact showed non-ohmic behavior, and high specific contact resistivity of $5\times10^{-3}\Omega\textrm{cm}^2$ was achieved by rapid thermal annealing at $375^{\circ}C$/10 sec. However, the specific contact resistivity decreased remarkably to $2\times10^{-6}\Omega\textrm{cm}^2$ by annealing at $425^{\circ}C$/10sec. In the Pd/Si/Pd/Ti/Au ohmic contact, minimum specific contact resistivity of $3.9\times10^{-7}\Omega\textrm{cm}^2$ was achieved by annealing at $400^{\circ}C$/20sec. In both ohmic contacts, low contact resistivity and non-spiking planar interface between ohmic materials and InGaAs were maintained. Therefore, these thermally stable ohmic contact systems are promising candidates for compound semiconductor devices. RF performance of the AlGaAs/GaAs HBT was also examined by employing the Pd/Si/Ti/Pt and Pd/Si/Pd/Ti/Au systems as emitter ohmic contacts. Cutoff frequencies were 63.9 ㎓ and 74.4 ㎓, respectively, and maximum oscillation frequencies were 50.1 ㎓ and 52.5 ㎓, respectively. It shows very successful high frequency operations.

Enhanced Hydrogen Production from Methanol/Water Photo-Splitting in TiO2 Including Pd Component

  • Kwak, Byeong-Sub;Chae, Jin-Ho;Kim, Ji-Yeon;Kang, Mi-Sook
    • Bulletin of the Korean Chemical Society
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    • v.30 no.5
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    • pp.1047-1053
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    • 2009
  • The future use of hydrogen as an energy source is expected to increase on account of its environmentally friendliness. In order to enhance the production of hydrogen, Pd ions (0.01, 0.05, 0.1, and 0.5 mol%) were incorporated $TiO_2$ (Pd-$TiO_2$) and used as a photocatalyst. The UV-visible absorbance decreased with increasing level of palladium incorporation without a wavelength shift. Although all the absorption plots showed excitation characteristics, there was an asymmetric tail observed towards a higher wavelength caused by scattering. However, the intensity of the photoluminescence (PL) curves of Pd-$TiO_2$ was smaller, with the smallest case being observed at 0.1 and 0.5 mol% Pd-$TiO_2$, which was attributedto recombination between the excited electrons and holes. Based on these optical characteristics, the evolution of $H_2$ from methanol/water (1:1) photo-splitting over Pd-$TiO_2$ in the liquid system was enhanced, compared with that over pure $TiO_2$. In particular, 2.4 mL of $H_2$ gas was produced after 8 h when 0.5 g of a 1.0 mol% Pd-$TiO_2$ catalyst was used. $H_2$ was stably evolved even after 28 h without catalytic deactivation, and the amount of $H_2$ produced reached 14.5 mL after 28 h. This is in contrast to the case of the Pd 0.1 mol% impregnated $TiO_2$ of $H_2$ evolution of 17.5 mL due to the more decreasedelectron-hole recombination.

Perpendicular Magnetic Anisotropy in Co/Pd Layer with TiO2 Seed Layer on the Various Substrates (TiO2 씨앗층을 이용한 다양한 기판에서의 Co/Pd 층의 수직 자기 이방성에 대한 연구)

  • Kang, Mool-Bit;Yoon, Jungbum;Lee, Jeong-Seop;You, Chun-Yeol
    • Journal of the Korean Magnetics Society
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    • v.23 no.1
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    • pp.7-11
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    • 2013
  • We investigate the perpendicular magnetic anisotropy in $TiO_2$/Co/Pd on GaAs(100), MgO(100), MgO(111), Si(100), and glass substrates. We find that the roughness of $TiO_2$ depends on the $O_2$ partial pressure in the magnetron sputtering process. The perpendicular magnetic anisotropies are found in all substrates with $TiO_2$ seed layer, and the perpendicular magnetic anisotropy of Co/Pd system is insensitive on the type of the substrate when the thickness of $TiO_2$ seed layer is thicker than 5 nm. However, MgO(111) substrate promotes $TiO_2$ rutile (111) structure, and it causes largest perpendicular magnetic anisotropy in $TiO_2$/Co/Pd(111) structures.