• Journal of Astronomy and Space Sciences
• /
• v.18 no.2
• /
• pp.153-162
• /
• 2001

In this paper, space radiation environment and total ionizing dose(TID) effect have been analyzed for the KOMPSAT-2 operational orbit. It has been revealed that the trapped protons are concentrated in the SAA(South Atlantic Anomaly) area and that the trapped protons and electrons, and solar protons are main factors affecting TID. It turned out that low energy Particles can be effectively blocked by aluminum shielding thickness, but high energy Particles can not be effectively blocked by increasing aluminum shielding thickness. KOMPSAT-2 total radiation dose which is accumulated continuously to spacecraft electronics has been expressed as the function of aluminum thickness. These values ran be used as the criteria for the selection of electronic parts and shielding thinkness of the KOMPSAT-2 structure or electronic box.

• Journal of Electrical Engineering and Technology
• /
• v.12 no.4
• /
• pp.1619-1626
• /
• 2017

Electronic components that are used in high-level radiation environment require a semiconductor device having a radiation-hardened characteristic. In this paper, we proposed a radiation-hardened I-gate n-MOSFET (n-type Metal Oxide Semiconductors Field Effect Transistors) using a layout modification technique only. The proposed I-gate n-MOSFET structure is modified as an I-shaped gate poly in order to mitigate a radiation-induced leakage current in the standard n-MOSFET structure. For verification of its radiation-hardened characteristic, the M&S (Modeling and Simulation) of the 3D (3-Dimension) structure is performed by TCAD (Technology Computer Aided Design) tool. In addition, we carried out an evaluation test using a $Co^{60}$ gamma-ray source of 10kGy(Si)/h. As a result, we have confirmed the radiation-hardened level up to a total ionizing dose of 20kGy(Si).

• Journal of IKEEE
• /
• v.27 no.3
• /
• pp.303-307
• /
• 2023

In this paper, the creation of an Electron-Hole Pair due to Total Ionizing Dose (TID) effects inside the oxide of a Buried Channel Array Transistor (BCAT) device is induced, resulting in an increase in leakage current and threshold due to an increase in hole trap charge at the oxide interface. By comparing and simulating changes in voltage with the previously proposed Partial Isolation Buried Channel Array Transistor (Pi-BCAT) structure, the characteristics in leakage current and threshold voltage changed regardless of the increased oxide area of the Pi-BCAT device, compared to the asymmetrically doped BCAT structure. It shows superiority.

• Journal of Semiconductor Engineering
• /
• v.1 no.3
• /
• pp.81-87
• /
• 2020

An instrumentation amplifier (IA) and an analog-to-digital converter (ADC) are essential circuit blocks for accurate and robust sensor readout systems. This paper introduces recent advances in radiation-hardening by design (RHBD) techniques applied for the sensor readout integrated circuits (IC), e.g., the three-op-amp IA and the successive-approximation register (SAR) ADC, operating against total ionizing dose (TID) and singe event effect (SEE) in harsh radiation environments. The radiation-hardened IA utilized TID monitoring and adaptive reference control to compensate for transistor parameter variations due to radiation effects. The radiation-hardened SAR ADC adopts delay-based double-feedback flip-flops to prevent soft errors which flips the data bits. Radiation-hardened IA and ADC were verified through compact model simulation, and fabricated CMOS chips were measured in radiation facilities to confirm their radiation tolerance.

• Journal of the Korean Society for Aeronautical & Space Sciences
• /
• v.34 no.11
• /
• pp.76-83
• /
• 2006

Space radiation environment for COMS is simulated by NASA AP8/AE8, JPL91 and NRL CREME models, respectively for trapped particle, solar proton and cosmic-ray. The radiation effects on electronic devices in communication payload are also estimated by using simulation results. Dose-depth curve and LET spectrum are calculated for estimating total ionizing dose(TID) effect and single event effect(SEE) respectively. Spherical sector method is applied to dose estimation at each position in the units of communication payload to consider shielding effect of platform and housing. Total ionizing dose at each position varies by 8 times through shielding effect under the same external space radiation environment.

• Korean Journal of Environmental Agriculture
• /
• v.24 no.1
• /
• pp.61-65
• /
• 2005

This study was to evaluate whether ionizing gamma radiation could be applied to break the dormancy of a potato minituber. The respiration rate of the minitubers was significantly affected by the storage temperature and a low dose gamma radiation. Ionizing radiation of 8 Gy enhanced the respiration rate of the potato tuber stored at $10^{\circ}C$ for 20 days. The potato tuber subjected to 4 and 8 Gy after 40 days storage at 10 and $20^{\circ}C$ exhibited higher respiration rates compared to the control (non-irradiated), but not at st. However, the ionizing radiation did not exhibit on significant effect on the respiration rate of the potato tuber stored for 60 days. It was observed that minitubers stored for 20 days had significant response to the storage temperature in terms of the total sugar content the higher the storage temperature, the lower the total sugar content. It was measured that the reducing sugar content was increased under the storage conditions both 5 and $10^{\circ}C$ for 40 days, but not to $20^{\circ}C$. The total sugar contents in the minituber stored for 60 days were similar to those stored for 40 days. The data was discussed on the relationships among the storage duration, temperature and ionizing radiation.

• Journal of the Korean Institute of Intelligent Systems
• /
• v.22 no.1
• /
• pp.49-55
• /
• 2012

Asynchronous counters, where the counter value is changed not by a synchronizing clock but by outer inputs, are used in various modern digital systems such as spaceborne electronics. In this paper, we propose a scheme of fault tolerance for asynchronous counters with critical races caused by total ionizing dose (TID) in space. As a typical design flaw of asynchronous digital circuits, critical races cause an asynchronous circuit to show non-deterministic behavior, i.e., the next stable state of a state transition is not a fixed value but may be any value of a state set. Using the corrective control scheme for asynchronous sequential machines, this paper provides an existence condition and design procedure for a state feedback controller that can invalidate the effect of critical races. We implement the proposed control system in VHDL code and conduct experiments to demonstrate that the proposed control system can overcome critical races.

• Nuclear Engineering and Technology
• /
• v.55 no.11
• /
• pp.4191-4203
• /
• 2023

Robotics applications are greatly needed in hazardous locations, e.g., fusion and fission reactors, where robots must perform delicate and complex tasks under ionizing radiation conditions. The drawback is that some robotic parts, such as active electronics, are susceptible to radiation. It can lead to unexpected failures and early termination of the robotic operation. This paper analyses the ionizing radiation effect from 0.09 to 1.5 Gy/s in robotic components (microcontrollers, servo motors and temperature sensors). The first experiment compares the performance of various microcontroller types and their actuators and sensors, where different mitigation strategies are applied, such as using Radiation-Hardened (Rad-Hard) microcontrollers or shielding. The second and third experiments analyze the performance of a 3-Degrees of Freedom (DoF) robotic arm, evaluating its components' responses and trajectory. This study enhances our understanding and expands our knowledge regarding radiation's impact on robotic arms and components, which is useful for defining the best strategies for extending the robots' operational lifespan, especially when performing maintenance or inspection tasks in radiation environments.

• Journal of the Korean Society for Aeronautical & Space Sciences
• /
• v.34 no.11
• /
• pp.84-91
• /
• 2006

Recently, all the electrical parts for satellite application are required more strong against cosmic rays, because spacecraft's life time and function are depending on the their conditions. Also, a TID effect test was undertaken with units and/or subsystems which are already assembled on the PCB in past time. However, it is very hard to know and analyze that some abnormal states are appeared after launch. Moreover, it is necessary to perform a test of TID effects based on the parts level for preparing preliminary data in cosmic rays. Therefore, this paper presents a test-bed to perform a TID effect test of Metal-Oxide Semiconductor Field Effect Transistor (MOSFET) which is a fundamental element for electronics.

• Journal of IKEEE
• /
• v.15 no.2
• /
• pp.143-148
• /
• 2011

MOS (Metal-Oxide Semconductor) devices among the most sensistive of all semiconductors to radiation, in particular ionizing radiation, showing much change even after a relatively low dose. The necessity of a radiation dosimeter robust enough for the working environment has increased in the fields of aerospace, radio-therapy, atomic power plant facilities, and other places where radiation exists. The power MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) has been tested for use as a gamma radiation dosimeter by measuring the variation of threshold voltage based on the quantity of dose, and a maximum total dose of 30 krad exposed to a $^{60}Co$ ${\gamma}$-radiation source, which is sensitive to environment parameters such as temperature. The gate oxide structures give the main influence on the changes in the electrical characteristics affected by irradiation. The variation of threshold voltage on the operating temperature has caused errors, and needs calibration. These effects can be overcome by adjusting gate oxide thickness and implanting impurity at the surface of well region in MOSFET.