• Title/Summary/Keyword: Transient radiation effect

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The Study of Transient Radiation Effects on Commercial Electronic Devices (즉발감마선에 의한 상용전자소자의 피해현상분석 연구)

  • Oh, Seugn-Chan;Lee, Nam-Ho;Lee, Heung-Ho
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.61 no.10
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    • pp.1448-1453
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    • 2012
  • In this study, we carried out transient radiation test for identify failure situation by a transient radiation effect on operational amplifier devices. This experiments were carried out using a 60 MeV electron beam pulse of the LINAC(Linear Accelerator) facility in the Pohang Accelerator Laboratory. In this test, we has found that a serious failure as a burn-out effect due to overcurrent on the partial electronic devices.

Modeling and Simulation for Transient Pulse Gamma-ray Effects on Semiconductor Devices (반도체 소자의 과도펄스감마선 영향 모델링 및 시뮬레이션)

  • Lee, Nam-Ho;Lee, Seung-Min
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.59 no.9
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    • pp.1611-1614
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    • 2010
  • The explosion of a nuclear weapon radiates a gamma-ray in the form of a transient pulse. If the gamma-ray introduces to semiconductor devices, much Electron-Hole Pairs(EHPs) are generated in depletion region of the devices[7]. as a consequence of that, high photocurrent is created and causes upset, latchup and burnout of semiconductor devices[8]. This phenomenon is known for Transient Radiation Effects on Electronics(TREE), also called dose-rate effects. In this paper 3D structure of inverter and NAND gate device was designed and transient pulse gamma-ray was modeled. So simulation for transient radiation effect on inverter and NAND gate was accomplished and mechanism for upset and latchup was analyzed.

Numerical Analysis on the Transient Cooling Characteristics of an Infrared Detector Cryochamber (적외선 센서 냉각용 극저온 용기의 과도 냉각 특성에 관한 수치해석)

  • 이정훈;김호영;강병하
    • Progress in Superconductivity and Cryogenics
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    • v.4 no.2
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    • pp.68-72
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    • 2002
  • This work investigates the transient cooling characteristics of an Infrared (IR) detector cryochamber, which has a critical effect on the cooling load. The current thermal modeling considers the conduction heat transfer through a cold well. the gaseous conduction due to outgassing. and the radiation heat transfer. The transient cooling Performance. i.e. the penetration depth and cooling load, is determined using a finite difference method. It is found that the penetration depth increases as the bore conductivity increases. Gaseous conduction and radiation hardly affect the penetration depth. The transient cooling load increases as the bore conductivity increases. The effects of gaseous conduction and radiation on transient heat transfer are weak at initial stages of cooling. However, their effects become significant as the cooling Process Proceeds.

The Study of Latch-up (과도방사선 조건에서 PN다이오드소자의 방사선 영향분석)

  • Oh, Seung-Chan;Jeong, Sanghun;Hwang, YoungGwan;Lee, Nam-Ho
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2013.05a
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    • pp.791-794
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    • 2013
  • Electronic systems may be cause of various serious failures due to an ionizing radiation effect when exposed to a prompt gamma-ray pulse. This transient electrical malfunction can, in some cases, results in a failure of the electronic system of which the circuits are a part. Transient radiation measurement and evaluation system is required to development for enhanced radiation-resistance against the initial nuclear radiation produced by the detonation of a nuclear weapon of semiconductor devices. In these studies, we performed the following work. In the first part of the work, we carried out a SPICE simulation applied to nuclear radiation condition for PN diode and we also investigated the photocurrent by a pulsed gamma-ray on a PN diode using a TCAD simulation.

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A Study on Implementation of a Transient Radiation Effects on Electronics(TREE) Assessment System Based on M&S (M&S 기반 반도체소자의 펄스감마선 피해평가 시스템 구축 연구)

  • Lee, Nam-Ho;Lee, Seung-Min
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.62 no.7
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    • pp.969-973
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    • 2013
  • To simulate the effect of high dose-rate radiation on semiconductor devices, device modeling work has been performed especially in the area of photo-current generation by a PIN diode. The resultant analytical values were compared with experimental ones that were specially designed and performed to benchmark the simulation results. Initial results showed 27.85% error between the simulation and the experiment. The error can be further reduced by improvement both in simulation and in related experiments. The developed technique from the study can be applicable to radiation dosimetry and to analysis on the radiation effects in electronics.

The Study of Latch-up (펄스감마선에 의한 DC/DC 컨버터의 Latch-up현상에 대한 연구)

  • Oh, Seung-Chan;Lee, Nam-Ho;Lee, Heung-Ho
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2012.05a
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    • pp.719-721
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    • 2012
  • In this study, we carried out transient radiation experiments for identify failure situation by a transient radiation effect on DC/DC converter device due to high energy ionizing radiation pulse induced to electronic device. This experiments were carried out using a 60 MeV electron beam pulse of the LINAC(Linear Accelerator) facility in the Pohang Accelerator Laboratory. In this experiment, we has found that the latch-up phenomena could be checked in more than $1.0{\times}10^8$rad(si)/sec condition.

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CMOS Logic Design and Fabrication for Analyzing the Effect of Transient Radiation Damage (과도 방사선 피해 영향 분석을 위한 CMOS 논리 소자 설계 및 제작)

  • Jeong, Sang-Hun;Lee, Nam-Ho
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2012.05a
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    • pp.880-883
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    • 2012
  • In this paper, CMOS logic device, the INVERTER, NAND, NOR were designed and fabricated using 0.18um CMOS process for analyzing the effect of transient radiation damage. Fabricated logic devices were measured by applying a 1kHz input at 1.8V supply. As a result, the current consumption of less than 70uA and Rising time, Falling time was within a 4us. Experimental results transmission delays occurred when using a 50M cable for pulse radiation experiments.

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SORET, HALL CURRENT, ROTATION, CHEMICAL REACTION AND THERMAL RADIATION EFFECTS ON UNSTEADY MHD HEAT AND MASS TRANSFER NATURAL CONVECTION FLOW PAST AN ACCELERATED VERTICAL PLATE

  • VENKATESWARLU, M.;LAKSHMI, D. VENKATA;RAO, K. NAGA MALLESWARA
    • Journal of the Korean Society for Industrial and Applied Mathematics
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    • v.20 no.3
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    • pp.203-224
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    • 2016
  • The heat and mass transfer characteristics of the unsteady hydromagnetic natural convection flow with Hall current and Soret effect of an incompressible, viscous, electrically conducting, heat absorbing and optically thin radiating fluid flow past a suddenly started vertical infinite plate through fluid saturated porous medium in a rotating environment are taken into account in this paper. Derivations of exact analytical solutions are aimed under different physical properties. The velocity, concentration and temperature profiles, Sherwood number and Nusselt number are easily examined and discussed via the closed forms obtained. Soret effect and permeability parameter tends to accelerate primary and secondary fluid velocities whereas hall current, radiation and heat absorption have reverse effect on it. Radiation and heat absorption have tendency to enhance rate of heat transfer at the plate. The results obtained here may be further used to verify the validity of obtained numerical solutions for more complicated transient free convection fluid flow problems.

Radiation Qualification of MPC860 for Space Application with Proton Accelerators (양성자 가속기를 이용한 MPC860의 우주방사선 인증 시험)

  • Seon, Jong-Ho;Kim, Sung-Joon;Jeong, Seong-Keun;Min, Kyoung-Wook;Choe, Won-Ho
    • Journal of the Korean Society for Aeronautical & Space Sciences
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    • v.32 no.5
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    • pp.116-121
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    • 2004
  • Simulation of proton irradiation in space is undertaken with a cyclotron accelerator. The cyclotron is capable of accelerating protons up to 200MeV with nominal fluxes near $10^6-10^8\;protons/cm^2/s$. Accelerated protons are irradiated onto a MPC860 for space application. Both the transient and cumulative responses of the device are found due to the proton irradiation. The primary transient response of the device is modification of the stored data in the circuit, whereas intermittent functional interrupts are also found. The cumulative response of the device is the increase of current consumption by the device.

Transient Thermal Analysis on Wall Temperature Change of Rocket Engine Combustion Chamber Considering Film-Cooling (막냉각을 고려할 때 로켓엔진 연소실 벽면 온도변화에 대한 비정상 열해석)

  • Ha, Seong-Up;Lee, Seon-Mi;Moon, Il-Yoon;Lee, Soo-Yong
    • Journal of the Korean Society of Propulsion Engineers
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    • v.16 no.5
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    • pp.37-46
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    • 2012
  • The calculation model for heat transfer analysis of rocket engine combustion chamber considering film-cooling has been established. Convective, radiative heat transfers and film-cooling effect in combustion chamber were evaluated using empirical equations especially for rocket engine combustors, and for heat transfer outward from chamber wall general convective and radiative equations were applied. Structural grid has been generated inside chamber wall for FVM calculations, and transient thermal analyses were carried out by time-marching techniques. LOx/kerosene rocket engine with chamber pressure of 50 bar has been analysed, and it is shown that, in that case, the film-cooling less than 4% remarkably contributes to reduce wall temperature, but the effect of the effect of film-cooling more than about 4% is not significantly increased.