• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
• /
• pp.312.1-312.1
• /
• 2016

We have deposited ZnO thin films by ultraviolet (UV) enhanced atomic layer deposition using diethylznic (DEZ) and water (H2O) as precursors with UV light. The atomic layer deposition relies on alternating dose of the precursor on the surface and subsequent chemisorption of the precursors with self-limiting growth mechanism. Though ALD is useful to deposition conformal and precise thin film, the surface reactions of the atomic layer deposition are not completed at low temperature in many cases. In this experiment, we focused on the effects of UV radiation during the ALD process on the properties of the inorganic thin films. The surface reactions were found to be complementary enough to yield uniform inorganic thin films and fully react between DEZ and H2O at the low temperature by using UV irradiation. The UV light was effective to obtain conductive ZnO film. And the stability of TFT with UV-enhanced ZnO was improved than ZnO by thermal ALD method. High conductive UV-enhanced ZnO film have the potential to applicability of the transparent electrode.

• 한국진공학회지
• /
• 제19권2호
• /
• pp.91-95
• /
• 2010

상온에서 고품질의 $TiO_2$ 박막을 제조하기 위하여 titanium isopropoxide [Ti(OCH$(CH_3)_2)_4$, TIP]와 $H_2O$을 이용한 자외선 활성화 원자층 증착(UV-enhanced atomic layer deposition: UV-ALD) 기술을 개발하였다. UV-ALD 기술은 상온에서 자체제어 표면 반응(self-limitting surface reaction)을 통해 균일하고 고품위 등방 특성을 갖는 순수한 $TiO_2$ 박막 증착이 가능하였다. ALD 반응 시 조사되는 자외선은 Si 기질 위에 우수한 접착력을 가지는 고품질의 $TiO_2$ 박막을 얻는데 효과적이었다. UV-ALD 기술은 높은 단차비(aspect ratio)를 가지는 trench 기질 위에 균일한 $TiO_2$ 박막을 증착하는 데에 적용되었다.

• 한국산학기술학회논문지
• /
• 제8권4호
• /
• pp.726-732
• /
• 2007

ALD (atomic layer deposition)법을 이용하여 두께를 달리한 $10{\sim}50nm-TiO_{2-x}/quartz$ 구조의 UV 기능성 박막을 형성시켰다. 박막의 두께는 우선 $10nm-TiO_{2-x}$를 성막한 후 엘립소미터로 두께를 확인하였고 나머지 두께는 증착시간을 선형적으로 조절하여 완성하였다. $TiO_2$ 박막 두께에 따른 생성상과 파장대별 흡수도, 가시광선의 투과율을 각각 X선 회절기, UV-VIS-IR 분석기, 접사용 디지털 카메라를 써서 확인하였다. ALD 법으로 제조된 $TiO_{2-x}$는 벌크 $TiO_2$에 비해 비정질 (amorphous)이면서 비정량적인 $TiO_{2-x}$ 형태임을 확인하였다. 380 nm와 415 nm의 흡수단을 보여 $3.0{\sim}3.2eV$의 밴드갭을 가지는 기존의 벌크 $TiO_2$와는 달리, 제작된 $TiO_{2-x}$ 박막은 197 nm와 250 nm의 부근에서 흡수단을 보이는 특징이 있었다. 따라서 장파장대의 자외선을 차단하는 기능을 가진 기존의 벌크 $TiO_2$와는 달리 ALD로 제작된 나노급 $TiO_2$는 단파장대의 자외선을 흡수할 수 있는 기능성이 있었고, 아울러 가시광선대에서 우수한 투과도를 보였다. 새로이 제안된 ALD를 이용한 나노급 $TiO_{2-x}$ 박막은 가시광선의 투과도는 향상시키면서 단파장대의 자외선을 효과적으로 흡수하는 기능성을 가졌음을 확인하였다.

• JSTS:Journal of Semiconductor Technology and Science
• /
• 제14권1호
• /
• pp.117-123
• /
• 2014

The fabrication and characterization of a Si/ZnO thin film heterojunction ultraviolet photodiode has been presented in this paper. ZnO thin film of ~100 nm thick was deposited on <100> Silicon (Si) wafer by atomic layer deposition (ALD) technique. The Photoluminescence spectroscopy confirms that as-deposited ZnO thin film has excellent visible-blind UV response with almost no defects in the visible region. The room temperature current-voltage characteristics of the n-ZnO thin film/p-Si photodiodes are measured under an UV illumination of $650{\mu}W$ at 365 nm in the applied voltage range of ${\pm}2V$. The current-voltage characteristics demonstrate an excellent UV photoresponse of the device in its reverse bias operation with a contrast ratio of ~ 1115 and responsivity of ~0.075 A/W at 2 V reverse bias voltage.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
• /
• pp.394-394
• /
• 2012

We fabricated organic-inorganic superlattice films using molecular layer deposition (MLD) and atomic layer deposition (ALD). The MLD is a gas phase process in the vacuum like to atomic layer deposition (ALD) and also relies on a self-terminating surface reaction of organic precursor which results in the formation of a monolayer in each sequence. In the MLD process, 'Alucone' is very famous organic thin film fabricated using MLD. Alucone layers were grown by repeated sequential surface reactions of trimethylaluminum and ethylene glycol at substrate temperature of $80^{\circ}C$. In addition, we developed UV-assisted $Al_2O_3$ with gas diffusion barrier property better than typical $Al_2O_3$. The UV light was very effective to obtain defect-free, high quality $Al_2O_3$ thin film which is determined by water vapor transmission rate (WVTR). Ellipsometry analysis showed a self-limiting surface reaction process and linear growth of each organic, inorganic film. Composition of the organic films was confirmed by infrared (IR) spectroscopy. Ultra-violet (UV) spectroscopy was employed to measure transparency of the organic-inorganic superlattice films. WVTR is calculated by Ca test. Organic-inorganic superlattice films using UV-assisted $Al_2O_3$ and alucone have possible use in gas diffusion barrier for OLED.

• 한국재료학회지
• /
• 제18권10호
• /
• pp.515-520
• /
• 2008

We fabricated 10 nm-$TiO_2$ thin films for DSSC (dye sensitized solar cell) electrode application using ALD (atomic layer deposition) method at the low temperatures of $150^{\circ}\;and\;250^{\circ}$. We characterized the crosssectional microstructure, phase, chemical binding energy, and absorption of the $TiO_2$ using TEM, HRXRD, XPS, and UV-VIS-NIR, respectively. TEM analysis showed a 10 nm-thick flat and uniform $TiO_2$ thin film regardless of the deposition temperatures. Through XPS analysis, it was found that the stoichiometric $TiO_2$ phase was formed and confirmed by measuring main characteristic peaks of Ti $2p^1$, Ti $2p^3$, and O 1s indicating the binding energy status. Through UV-VIS-NIR analysis, ALD-$TiO_2$ thin films were found to have a band gap of 3.4 eV resulting in the absorption edges at 360 nm, while the conventional $TiO_2$ films had a band gap of 3.0 eV (rutile)${\sim}$3.2 eV (anatase) with the absorption edges at 380 nm and 410 nm. Our results implied that the newly proposed nano-thick $TiO_2$ film using an ALD process at $150^{\circ}$ had almost the same properties as thsose of film at $250^{\circ}$. Therefore, we confirmed that the ALD-processed $TiO_2$ thin film with nano-thickness formed at low temperatures might be suitable for the electrode process of flexible devices.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
• /
• pp.418-418
• /
• 2012

We fabricated a new type of hybrid film using molecular layer deposition (MLD). The MLD is a gas phase process analogous to atomic layer deposition (ALD) and also relies on a saturated surface reaction sequentially which results in the formation of a monolayer in each sequence. In the MLD process, polydiacetylene (PDA) layers were grown by repeated sequential surface reactions of titanium tetrachloride and 2,4-hexadiyne-1,6-diol with ultraviolet (UV) polymerization under a substrate temperature of $100^{\circ}C$. Ellipsometry analysis showed a self-limiting surface reaction process and linear growth of the hybrid films. Polymerization of the hybrid films was confirmed by infrared (IR) spectroscopy and UV-Vis spectroscopy. Composition of the films was confirmed by IR spectroscopy and X-ray photoelectron (XP) spectroscopy. The titanium oxide cross-linked polydiacetylene (TiOPDA) hybrid films exhibited good thermal and mechanical stabilities.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2003년도 제25회 학술발표회 초록집
• /
• pp.111-111
• /
• 2003

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
• /
• pp.305.2-305.2
• /
• 2016

Tin monosulfide (SnS) is one promising candidate absorber material which replace the current technology based on cadmium telluride (CdTe) and copper indium gallium sulfide selenide (CIGS) for its suitable optical band gap, high absorption coefficient, earth-abundant, non-toxic and cost-effective. During past years work, thin film solar cells based on SnS films had been improved to 4.36% certified efficiency. In this study, Tin monosul fide was obtained by atomic layer deposition (ALD) using the reaction of Tetrakis (dimethylamino) tin (TDMASn, [(CH3)2N]4Sn) and hydrogen sulfide (H2S) at low temperatures (100 to 200 oC). The direct optical band gap and strong optical absorption of SnS films were observed throughout the Ultraviolet visible spectroscopy (UV VIS), and the properties of SnS films were analyzed by sanning Electron Microscope (SEM) and X-Ray Diffraction (XRD).

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
• /
• pp.256-256
• /
• 2011

We have deposited Al2O3 thin films on Si substrates at room temperature by UV-enhanced atomic layer deposition using trimethylaluminum (TMA) and H2O as precursors with UV light. The atomic layer deposition relies on alternate pulsing of the precursor gases onto the substrate surface and subsequent chemisorption of the precursors. In many cases, the surface reactions of the atomic layer deposition are not completed at low temperature. In this experiment, the surface reactions were found to be self-limiting and complementary enough to yield uniform Al2O3 thin films by using UV irradiation at room temperature. The UV light was very effective to obtain the high quality Al2O3 thin films with defectless.