• 반도체디스플레이기술학회지
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• 제22권3호
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• pp.52-61
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• 2023

We designed a novel ultra-miniaturized microcolumn structure having an stigmator to significantly improve throughput per unit time, which is the biggest disadvantage of microcolumns. We adopted the structure of the stigmator in the form of an electrostatic octupole electrode, and used an electrostatic quadrupole deflector with a relatively simple structure considering the increase in wiring due to the introduction of the stigmator. We have dramatically reduced the effect of astigmatism that occurs when the electron beam probe is scanned to the periphery of the target by introducing the stigmator between the control electrode and the deflector. As our numerical analysis simulation results, the field of view obtained as a result of this study is about 46.3% improved compared to our previous study, and the electron beam probe size of less than 10 nm was achieved in the entire field of view.

• 반도체디스플레이기술학회지
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• 제20권4호
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• pp.29-37
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• 2021

A 7 nm technology node using extreme ultraviolet lithography with a wavelength of 13.5 nm has been recently developed and applied to the semiconductor manufacturing process. Furthermore, the development of sub-3 nm technology nodes continues to be required. In this study, design factors of an electrostatic deflector for an ultra-miniaturized microcolumn system that can realize an electron wavelength of below 1.23 nm with an acceleration voltage of above 1 eV were investigated using a three-dimensional simulator. Particularly, the optimal design of the electrostatic octupole floating deflector was derived by optimizing the design elements and improving the driving method of the 1 keV low energy ultra-miniaturized microcolumn deflector. As a result, the entire wide field of view greater than 330 ㎛ at a working distance of 4 mm was realized with an ultra-high-resolution electron beam spot smaller than 10 nm. The results of this study are expected to be a basis technology for realizing a wafer-scale multi-array microcolumn system, which is expected to innovatively improve the throughput per unit time, which is the biggest drawback of electron beam lithography.